Global Standards for the Microelectronics Industry
Standards & Documents Search
Title | Document # | Date |
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JC-42.6 MANUFACTURER IDENTIFICATION (ID) CODE FOR LOW POWER MEMORIES |
JEP166E | Jul 2023 |
This document defines the JC-42.6 Manufacturer ID. This document covers Manufacturer ID Codes for the following technologies: LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3), LPDDR4 (JESD209-4), Wide-IO (JESD229), and Wide-IO2 (JESD229-2). The purpose of this document is to define the Manufacturer ID for these devices. Item No. 1725.03C. See Annex for additions/changes. To make a request for an ID code: https://www.jedec.org/id-codes-low-power-memories Committee(s): JC-42.6 Free download. Registration or login required. |
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JEP95 Registrations Main Page |
JEP95 Index | Apr 2001 |
This page will provide a link to the Master Index for JEP95. It also provides a link to 'index by device type' as well as the table of contents for each section within JEP95. For older outlines that have been archived, they can be accessed through this page. Committee(s): JC-11 |
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SYSTEM LEVEL ESD PART 1: COMMON MISCONCEPTIONS AND RECOMMENDED BASIC APPROACHESStatus: ReaffirmedApril 2023 |
JEP161 | Jan 2011 |
This report is the first part of a two part document. Part I will primarily address hard failures characterized by physical damage to a system (failure category d as classified by IEC 61000-4-2). Soft failures, in which the system’s operation is upset without physical damage, are also critical and predominant in many cases. Free download. Registration or login required. |
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UNDERSTANDING ELECTRICAL OVERSTRESS - EOSStatus: Reaffirmed May 2022 |
JEP174 | Sep 2016 |
This purpose of this white paper will be to introduce a new perspective about EOS to the electronics industry. As failures exhibiting EOS damage are commonly experienced in the industry, and these severe overstress events are a factor in the damage of many products, the intent of the white paper is to clarify what EOS really is and how it can be mitigated once it is properly comprehended. Committee(s): JC-14.3 Free download. Registration or login required. |
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STANDARD MANUFACTURERS IDENTIFICATION CODE |
JEP106BK | Sep 2024 |
The manufacturers identification code is defined by one or more 8 bit fields, each consisting of 7 data bits plus 1 odd parity bit. The manufacturers identification code is assigned, maintained and updated by the JEDEC Office. The intent of this identification code is that it may be used whenever a digital field is required, e.g., hardware, software, documentation, etc. To make a request for an ID Code please go to https://www.jedec.org/standards-documents/id-codes-order-form Free download. Registration or login required. |
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FAILURE MECHANISMS AND MODELS FOR SEMICONDUCTOR DEVICES |
JEP122H | Sep 2016 |
This publication provides a list of failure mechanisms and their associated activation energies or acceleration factors that may be used in making system failure rate estimations when the only available data is based on tests performed at accelerated stress test conditions. The method to be used is the Sum-of-the-Failure-Rates method. This publication also provides guidance in the selection of reliability modeling parameters, namely functional form, apparent thermal activation energy values and sensitivity to stresses such as power supply voltage, substrate current, current density, gate voltage, relative humidity, temperature cycling range, mobile ion concentration, etc. Committee(s): JC-14.2 Available for purchase: $163.00 Add to Cart Paying JEDEC Members may login for free access. |
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DISCONTINUING USE OF THE MACHINE MODEL FOR DEVICE ESD QUALIFICATIONStatus: Reaffirmed September 2020 |
JEP172A | Jul 2015 |
Over the last several decades the so called "machine model" (aka MM) and its application to the required ESD component qualification has been grossly misunderstood. The scope of this JEDEC document is to present evidence to discontinue use of this particular model stress test without incurring any reduction in the IC component's ESD reliability for manufacturing. In this regard, the document's purpose is to provide the necessary technical arguments for strongly recommending no further use of this model for IC qualification. The published document should be used as a reference to propagate this message throughout the industry. Committee(s): JC-14.3 Free download. Registration or login required. |
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DDR4 PROTOCOL CHECKS |
JEP175 | Jul 2017 |
The intended use of this document is for the validation and debug of DDR4 based designs. This document contains protocol checks, sometimes referred to as memory access rules or protocol violations. This document contains a list of checks that can be used during the verification or debug stages of development to check that accesses to a DDR4 DRAM adhere to JESD79-4B. These checks are derived from JESD79-4B. Item 31509. Committee(s): JC-40.5 Free download. Registration or login required. |
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ADAPTER TEST BOARD RELIABILITY TEST GUIDELINES |
JEP176 | Jan 2018 |
This publication describes guidelines for applying JEDEC reliability tests and recommended testing procedures to integrated circuits that require adapter test boards for electrical and Committee(s): JC-14.3 Free download. Registration or login required. |
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FOUNDRY PROCESS QUALIFICATION GUIDELINES - FRONT END TRANSISTOR LEVEL (Wafer Fabrication Manufacturing Sites) |
JEP001-2A | Sep 2018 |
This document describes transistor-level test and data methods for the qualification of semiconductor technologies. It does not give pass or fail values or recommend specific test equipment, test structures or test algorithms. Wherever possible, it references applicable JEDEC such as JESD47 or other widely accepted standards for requirements documentation. Committee(s): JC-14.2 Free download. Registration or login required. |
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Foundry Process Qualification Guidelines – Technology Qualification Vehicle Testing (Wafer Fabrication Manufacturing Sites) |
JEP001-3B | Sep 2024 |
The publication provides methodologies for measurements to qualify a new semiconductor wafer process. Free download. Registration or login required. |
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DYNAMIC ON-RESISTANCE TEST METHOD GUIDELINES FOR GaN HEMT BASED POWER CONVERSION DEVICES, VERSION 1.0Status: Reaffirmed November 2024 |
JEP173 | Jan 2019 |
This document is intended for use in the GaN power semiconductor and related power electronic industries, and provides guidelines for measuring the dynamic ON-resistance of GaN power devices. Reaffirmed: November 2024 Free download. Registration or login required. |
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GUIDELINE FOR SWITCHING RELIABILITY EVALUATION PROCEDURES FOR GALLIUM NITRIDE POWER CONVERSION DEVICES |
JEP180.01 | Jan 2021 |
This document is intended for use by GaN product suppliers and related power electronic industries. It provides guidelines for evaluating the switching reliability of GaN power switches and assuring their reliable use in power conversion applications. It is applicable to planar enhancement-mode, depletion-mode, GaN integrated power solutions and cascode GaN power switches. Committee(s): JC-70.1 Free download. Registration or login required. |
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ECXML Guidelines for Electronic Thermal System Level Models – XML Requirements |
JEP181A | Nov 2023 |
This publication establishes the requirements for the exchange of electronic thermal system level simulation models between supplier and end user in a single neutral file format. Committee(s): JC-15 Free download. Registration or login required. |
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TEST METHOD FOR CONTINUOUS-SWITCHING EVALUATION OF GALLIUM NITRIDE POWER CONVERSION DEVICES |
JEP182 | Jan 2021 |
This document is intended for use in the GaN power semiconductor and related power electronic industries and provides guidelines for test methods and circuits to be used for continuous-switching tests of GaN power conversion devices. Committee(s): JC-70.1 Free download. Registration or login required. |
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Guidelines for Measuring the Threshold Voltage (VT) of SiC MOSFETs |
JEP183A | Jan 2023 |
This publication describes the guidelines for VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis. Committee(s): JC-70.1 Free download. Registration or login required. |
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NEAR-TERM DRAM LEVEL ROWHAMMER MITIGATION |
JEP300-1 | Mar 2021 |
RAM process node transistor scaling for power and DRAM capacity has made DRAM cells more sensitive to disturbances or transient faults. This sensitivity becomes much worse if external stresses are applied in a meticulously manipulated sequence, such as Rowhammer. Rowhammer related papers have been written outside of JEDEC, but some assumptions used in those papers didn’t explain the problem very clearly or correctly, so the perception for this matter is not precisely understood within the industry. This publication defines the problem and recommends following mitigations to address such concerns across the DRAM industry or academia. Item 1866.01. Committee(s): JC-42 Free download. Registration or login required. |
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SYSTEM LEVEL ROWHAMMER MITIGATION |
JEP301-1 | Mar 2021 |
A DRAM rowhammer security exploit is a serious threat to cloud service providers, data centers, laptops, smart phones, self-driving cars and IoT devices. Hardware research and development will take time. DRAM components, DRAM DIMMs, System-on-chip (SoC), chipsets and system products have their own design cycle time and overall life time. This publication recommends best practices to mitigate the security risks from rowhammer attacks. Item 1866.02. Committee(s): JC-42 Free download. Registration or login required. |
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GUIDELINE FOR EVALUATING BIAS TEMPERATURE INSTABILITY OF SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR DEVICES FOR POWER ELECTRONIC CONVERSION |
JEP184 | Mar 2021 |
The scope of this document covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS devices as well. Committee(s): JC-70.2 Free download. Registration or login required. |
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ELECTROSTATIC DISCHARGE (ESD) SENSITIVITY TESTING – REPORTING ESD WITHSTAND LEVELS ON DATASHEETS |
JEP178 | Apr 2021 |
This document is intended to guide device manufacturers in developing datasheets and to device customers in understanding datasheet entries. Committee(s): JC-14.3 Free download. Registration or login required. |