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This document defines the LPDDR5 standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a JEDEC compliant x16 one channel SDRAM device and x8 one channel SDRAM device. LPDDR5 device density ranges from 2 Gb through 32 Gb. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4 (JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3) and LPDDR4 (JESD209-4). Item 1854.99A

Committee(s): JC-42.6

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This standard describes a nondestructive test to assess solid state device mark legibility. The specification applies only to solid state devices that contain markings, regardless of the marking method. It does not define what devices must be marked or the method in which the device is marked, i.e., ink, laser, etc. The standard is limited in scope to the legibility requirements of solid state devices, and does not replace related reference documents listed in this standard.

Committee(s): JC-14.1

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The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. Any company may request a Function Specific ID by making a request to the JEDEC office at juliec@jedec.org. Please include “Function Specific ID Request, JESD216” in the email subject line. Item 1775.15 and 1775.18.

Committee(s): JC-42.4

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This document defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the DDR4 Registering Clock Driver (RCD) with parity for driving address and control nets on DDR4 RDIMM and LRDIMM applications. Any TBDs as of this document, are under discussion by the formulating committee. Item 314.08F.

*If you downloaded this file between 8/7/2019 and 8/14/2019, please download again, the publication date on the document was incorrected and has been fixed.

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Committee(s): JC-40.4

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Device and Subassembly Mechanical Shock Test Method is intended to evaluate devices in the free state and assembled to printed wiring boards for use in electrical equipment. The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. The use of subassemblies is a means to test devices in usage conditions as assembled to printed wiring boards. Mechanical Shock due to suddenly applied forces, or abrupt change in motion produced by handling, transportation or field operation may disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification.This document also replaces JESD22-B104.

Committee(s): JC-14, JC-14.1

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This standard defines power supply voltage range, dc interface, switching parameter and overshoot/undershoot for high speed low voltage swing terminated NMOS driver family digital circuits. The specifications in this standard represent a minimum set of interface specifications for low voltage terminated circuits. Item 159.03

Committee(s): JC-16

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This standard defines the DC and AC single-ended (data) and differential (clock) operating conditions, I/O impedances, and the termination and calibration scheme for 1.25 V Pseudo  Open Drain I/Os. The 1.25 V Pseudo Open Drain interface, also known as POD125, is primarily used to communicate with GDDR6 SGRAM devices.

Committee(s): JC-16

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This document provides a comprehensive definition of the e•MMC Electrical Interface, its environment, and handling. It also provides design guidelines and defines a tool box of macro functions and algorithms intended to reduce design-in overhead. The purpose of this standard is the definition of the e•MMC Electrical Interface, its environment and handling. It provides guidelines for systems designers. Item 67.14.

This document replaces all past versions, however links to the replaced versions are provided here for reference only: JESD84-B51, February 2015; JESD84-B50.1, July 2014 (Editorial revision of JESD84-B50); JESD84-B50, September 2013 (Revision of JESD84-B451); JESD84-B451, June 2012 (Revision of JESD84-B45, June 2011)

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Committee(s): JC-64

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The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet.

Item 1797.99J.

Committee(s): JC-42.3C

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