Global Standards for the Microelectronics Industry
Standards & Documents Search
| Title | Document # |
Date |
|---|---|---|
FLIP CHIP TENSILE PULL |
JESD22-B109C | Mar 2021 |
The Flip Chip Tensile Pull Test Method is performed to determine the fracture mode and strength of the solder bump interconnection between the flip chip die and the substrate. It should be used to assess the consistency of the chip join process. This test method is a destructive test. Committee(s): JC-14.1 Free download. Registration or login required. |
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HIGH BANDWIDTH MEMORY (HBM) DRAM |
JESD235D | Mar 2021 |
The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet (Note this version is the latest version for use with JESD235D). Committee item 1797.99L. Committee(s): JC-42.3C Available for purchase: $247.00 Add to Cart Paying JEDEC Members may login for free access. |
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ADDENDUM No. 1 to JESD209-4, LOW POWER DOUBLE DATA RATE 4X (LPDDR4X) |
JESD209-4-1A | Feb 2021 |
This addendum defines LPDDR4X specifications that supersede the LPDDR4 Standard (JESD209-4) to enable low VDDQ operation of LPDDR4X devices to reduce power consumption. Item 1831.55A. Committee(s): JC-42.6 Available for purchase: $106.00 Add to Cart Paying JEDEC Members may login for free access. |
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Addendum No. 1 to JESD79-4, 3D STACKED DRAM |
JESD79-4-1B | Feb 2021 |
This document defines the 3DS DDR4 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a compliant 8 Gbit through 128 Gbit for x4, x8 3DS DDR4 SDRAM devices. This addendum was created based on the JESD79-4 DDR4 SDRAM specification. Each aspect of the changes for 3DS DDR4 SDRAM operation was considered. Item 1727.58G Committee(s): JC-42.3C Free download. Registration or login required. |
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GRAPHICS DOUBLE DATA RATE 6 (GDDR6) SGRAM STANDARD |
JESD250C | Feb 2021 |
This document defines the Graphics Double Data Rate 6 (GDDR6) Synchronous Graphics Random Access Memory (SGRAM) specification, including features, functionality, package, and pin assignments. The purpose of this Specification is to define the minimum set of requirements for 8 Gb through 16 Gb x16 dual channel GDDR6 SGRAM devices. System designs based on the required aspects of this standard will be supported by all GDDR6 SGRAM vendors providing compatible devices. Some aspects of the GDDR6 standard such as AC timings and capacitance values were not standardized. Some features are optional and therefore may vary among vendors. In all cases, vendor data sheets should be consulted for specifics. This document was created based on some aspects of the GDDR5 Standard (JESD212). Item 1836.99E. Committee(s): JC-42.3C Free download. Registration or login required. |
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ENCLOSURE FORM FACTOR FOR SSD DEVICES, VERSION 1.0 |
JESD253 | Feb 2021 |
This document specifies the enclosure form factor which can be used with various type of SSD devices: outline of the top and bottom enclosure, three screw holes to mount the enclosure on the system, and two clamping holes in the top enclosure to lock to the connector. Item 318.06. Committee(s): JC-64.8 Free download. Registration or login required. |
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COUNTERFEIT ELECTRONIC PARTS: NON-PROLIFERATION FOR MANUFACTURERS |
JESD243A | Jan 2021 |
This standard identifies the best commercial practices for mitigating and/or avoiding counterfeit products by all manufacturers of electronic parts including, but not limited to original component manufacturers (OCMs), authorized aftermarket manufacturers, and other companies that manufacture electronic parts under their own logo, name, or trademark. The types of product this standard applies to is limited to monolithic microcircuits, hybrid microcircuits and discrete semiconductor products. Committee(s): JC-13 Free download. Registration or login required. |
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DDR4 NVDIMM-P BUS PROTOCOL |
JESD304-4.01 | Jan 2021 |
This version is a minor editorial adding Annex B that was left out of the original publication October 2020.An NVDIMM-P device is defined as a LRDIMM memory module which provides host controller access to DRAM and/or other memory devices such as persistent memory. A transactional protocol is described for NVDIMM-P, which may be used on a DDR interface allowing operation of both standard DRAM modules and NVDIMM-P modules on the same channel. Item 2233.98K. Committee(s): JC-45.6 Free download. Registration or login required. |
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STEADY-STATE TEMPERATURE-HUMIDITY BIAS LIFE TEST |
JESD22-A101D.01 | Jan 2021 |
This standard establishes a defined method and conditions for performing a temperature-humidity life test with bias applied. The test is used to evaluate the reliability of nonhermetic packaged solid state devices in humid environments. It employs high temperature and humidity conditions to accelerate the penetration of moisture through external protective material or along interfaces between the external protective coating and conductors or other features that pass through it. This revision enhances the ability to perform this test on a device which cannot be biased to achieve very low power dissipation. Free download. Registration or login required. |
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PROCUREMENT STANDARD FOR KNOWN GOOD DIE (KGD) |
JESD49B | Dec 2020 |
This standard was created to facilitate the procurement and use of high reliability semiconductor microcircuits or discrete devices provided in bare die form, commonly known as Known Good Die (KGD). Committee(s): JC-13 Free download. Registration or login required. |
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UNIVERSAL FLASH STORAGE (UFS) CARD EXTENSION, Version 3.0 |
JESD220-2B | Nov 2020 |
This standard specifies the characteristics of the UFS card electrical interface and the memory device. This document defines the added/modified features in UFS card compared to embedded UFS device. For other common features JESD220, UFS, will be referenced. Patents(): Samsung: US D727910, US D736212, US D736215, US D736214, US D736213, US 29/546125, US 29/546150 Committee(s): JC-64.1 Available for purchase: $76.00 Add to Cart Paying JEDEC Members may login for free access. |
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CYCLED TEMPERATURE HUMIDITY-BIAS WITH SURFACE CONDENSATION LIFE TEST |
JESD22-A100E | Nov 2020 |
The Cycled Temperature-humidity-bias Life Test is performed for the purpose of evaluating the reliability of nonhermetic packaged solid state devices in humid environments. It employs conditions of temperature cycling, humidity, and bias that accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. The Cycled Temperature-Humidity-Bias Life Test is typically performed on cavity packages (e.g., MQUADs, lidded ceramic pin grid arrays, etc.) as an alternative to JESD22-A101 or JESD22-A110. Free download. Registration or login required. |
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TEMPERATURE CYCLING |
JESD22-A104F | Nov 2020 |
This standard provides a method for determining solid state devices capability to withstand extreme temperature cycling. This standard applies to single-, dual- and triple-chamber temperature cycling and covers component and solder interconnection testing. It should be noted that this standard does not cover or apply to thermal shock chambers. This test is conducted to determine the ability of components and solder interconnects to withstand mechanical stresses induced by alternating high- and low-temperature extremes. Permanent changes in electrical and/or physical characteristics can result from these mechanical stresses. Committee(s): JC-14.1 Free download. Registration or login required. |
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DDRx SPREAD SPECTRUM CLOCKING (SSC) STANDARD |
JESD404-1 | Nov 2020 |
Definition for all DDRx component documents to reference. This is generic to any DDRxtechnology. Item 1842.34 Committee(s): JC-42.3C Free download. Registration or login required. |
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JEDEC MODULE SIDEBAND BUS (SidebandBus) |
JESD403-1 | Oct 2020 |
This standard defines the assumptions for the system management bus for next generation memory solutions; covering the interface protocol, use of hub devices, and voltages appropriate to these usages. Item 2260.37C. Committee(s): JC-45 Free download. Registration or login required. |
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UNIVERSAL FLASH STORAGE, UFS 2.2 |
JESD220C-2.2 | Aug 2020 |
The purpose of this standard is definition of a UFS Universal Flash Storage electrical interface and a UFS memory device. This standard defines a unique UFS feature set and includes the feature set of eMMC standard as a subset. This standard replaces JESD220C, UFS 2.1, and introduces a feature called WriteBooster. Item 138.88. Committee(s): JC-64.1 Free download. Registration or login required. |
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BYTE ADDRESSABLE ENERGY BACKED INTERFACE |
JESD245D | Jul 2020 |
The purpose of this standard is definition of an energy backed byte addressable function on a nonvolatile dual in-line memory module (NVDIMM). This standard defines the feature set and commands implemented by the energy backed byte addressable function on the NVDIMM. This standard is used in conjunction with JESD248. Item 2233.54F * A minor editorial change has been made to the table under 8.1.3.2, on page 47 on 9/1/2020, from the original posted version 8/18/2020. If you downloaded prior to 9/1/2020, please discard and use the current version. Committee(s): JC-45.6 Free download. Registration or login required. |
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DDR5 SDRAM |
JESD79-5 | Jul 2020 |
This document defines the DDR5 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this Standard is to define the minimum set of requirements for JEDEC compliant 8Gb through 32Gb for x4, x8, and x16 DDR5 SDRAM devices. This standard was created based on the DDR4 standards (JESD79-4) and some aspects of the DDR, DDR2, DDR3 & LPDDR4 standards (JESD79, JESD79-2, JESD79-3 & JESD209-4). Item 1848.99G. Committee(s): JC-42.3B Available for purchase: $369.00 Add to Cart Paying JEDEC Members may login for free access. |
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TEMPERATURE GRADE AND MEASUREMENT SPECIFICATIONS FOR COMPONENTS AND MODULES |
JESD402-1 | Jul 2020 |
This document specifies standard temperature ranges that may be used, by way of referencing JESD402-1, in other standards, specifications, and datasheets when defining temperature related specifications. Item 1855.01A Committee(s): JC-42 Free download. Registration or login required. |
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PMIC50x0 POWER MANAGEMENT IC SPECIFICATION, Rev. 1 |
JESD301-1 | Jun 2020 |
Definition of PMIC5000, PMIC5010 Voltage Regulator Device for Memory Module Applications Committee(s): JC-40.1 Free download. Registration or login required. |
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