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Committee(s): JC-64

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This document specifies the enclosure form factor which can be used with various type of SSD devices: outline of the top and bottom enclosure, three screw holes to mount the enclosure on the system, and two clamping holes in the top enclosure to lock to the connector. Item 318.06. This is a minor editorial revision detailed in Annex D.

Committee(s): JC-64.8

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The purpose of this test method is to identify the potential wave solder classification level of small plastic Surface Mount Devices (SMDs) that are sensitive to moisture-induced stress so that they can be properly packaged, stored, and handled to avoid subsequent mechanical damage during the assembly wave solder attachment and/or repair operations. This test method also provides a reliability preconditioning sequence for small SMDs that are wave soldered using full body immersion. This test method, may be used by users to determine what classification level should be used for initial board level reliability qualification.

Committee(s): JC-14, JC-14.1

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This extension of the thermal standards provides a standard fixture for direct attach type packages such as deep-downset of thermally tabbed packages. This specification provides additional design detail for use in developing thermal test boards with application to these package types. This document is in addition to and not replacement for the design specifications in other standards.

Committee(s): JC-15.1

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External visual inspection is an examination of the external surfaces, construction, marking, and workmanship of a finished package or component. External visual is a noninvasive and nondestructive test. It is functional for qualification, quality monitoring, and lot acceptance.

Committee(s): JC-14.1

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Committee(s): JC-14.3

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This specification defines the high-speed differential point-to-point signaling link for FBDIMM, operating at the buffer supply voltage of 1.5V that is provided at the FBDIMM DIMM connector. This specification also applies to FBDIMM host chips which may operate with a different supply voltage. The link consists of a transmitter and a receiver and the interconnect in between them. The transmitter sends serialized bits into a lane and the receiver accepts the electrical signals of the serialized bits and transforms them into a serialized bit-stream. The first generation FBDIMM link is being specified to operate from 3.2 to 4.8 Gb/s. The specifications are defined for three distinct bit-rates of operation: 3.2 Gb/s, 4.0 Gb/s and 4.8 Gb/s.

Patents(): There are known patent issues that are common to all FBDIMM related specifications. See document for link to FBDIMM Patents.

Committee(s): JC-16

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Terminology update. 
This standard includes four chapters of the FBD Channel Specification (cover) Channel Overview (Chapter 2), Initialization (Chapter 3), Channel Protocol (Chapter 4), and Reliability, Availability, and Serviceability (RAS) (Chapter 5).

Patents(): There are known patent issues that are common to all FBDIMM related specifications. See document for link to FBDIMM Patents.

Committee(s): JC-40

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The material in this test method has been superseded by JS-002-2018, published January 2019, which in turn has been superseded by JS-002-2022, published January 2023.

Committee(s): JC-14, JC-14.1

Terminology update.  

This FBDIMM DFx standard covers Design for Test, Design for Manufacturing, and Design for Validation (“DFx”) requirements and implementation guidelines for Fully Buffered DIMM technology.

Patents(): There are known patent issues that are common to all FBDIMM related specifications. See document for link to FBDIMM Patents.

Committee(s): JC-40, JC-40.5

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This standard identifies the general requirements for Distributors that supply Commercial and Military products. This standard applies to all discrete semiconductors, integrated circuits and Hybrids, whether packaged or in wafer/die form, manufactured by all Manufacturers. The requirements defined within this document are only applicable to products for which ownership remains with the Distributor or Manufacturer.

Committee(s): JC-13, JC-14.4

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Committee(s): JC-13

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Terminology update. 
This document defines the Graphics Double Data Rate 5 (GDDR5) Synchronous Graphics Random Access Memory (SGRAM), including features, functionality, package, and pin assignments. The purpose of this Standard is to define the minimum set of requirements for JEDEC standard compatible 512 Mb through 8 Gb x32 GDDR5 SGRAM devices. System designs based on the required aspects of this standard will be supported by all GDDR5 SGRAM vendors providing JEDEC standard compatible devices. Some aspects of the GDDR5 standard such as AC timings and capacitance values were not standardized. Some features are optional and therefore may vary among vendors. In all cases, vendor data sheets should be consulted for specifics. Item 1733.70B

Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office.

Committee(s): JC-42.3C

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This document defines the Graphics Double Data Rate 6 (GDDR6) Synchronous Graphics Random Access Memory (SGRAM) specification, including features, functionality, package, and pin assignments. The purpose of this Standard is to define the minimum set of requirements for 8 Gb through 16 Gb x16 dual channel GDDR6 SGRAM devices. System designs based on the required aspects of this standard will be supported by all GDDR6 SGRAM vendors providing compatible devices. Some aspects of the GDDR6 standard such as AC timings and capacitance values were not standardized. Some features are optional and therefore may vary among vendors. In all cases, vendor data sheets should be consulted for specifics. This document was created based on some aspects of the GDDR5 Standard (JESD212).

Committee(s): JC-42.3C

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This document is intended to be used in conjunction with the JESD51-50 series of standards, especially with JESD51-51 (Implementation of the Electrical Test Method for the Measurement of Real Thermal Resistance and Impedance of Light-emitting Diodes with Exposed Cooling Surface) document. This present document focuses on the measurement of the total radiant flux of LEDs in combination with the measurement of LEDs's thermal characteristics: guidelines on the implementation of the recommendations of the CIE 127-2007 document are provided.

Committee(s): JC-15

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Testing for hermeticity on commercial product is not normally done on standard molded devices that are not hermetic. Commercial product that this test method applies to has a construction that produces a hermetic package; examples of this are ceramic and metal packages. Most of these tests are controlled and updated in the military standards, the two standards that apply are MIL-STD-750 for discretes, & MIL-STD-883 for microcircuits. The test within these standards can be used for all package types. Within these standards the tests are similar; MIL-STD-750 Test Method 1071 Hermetic Seal is recommended for any commercial hermetic requirements. For MIL-STD-883 the applicable test method is 1014 Seal.

Committee(s): JC-14.1

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The HBM3 DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM3 DRAM uses a wide-interface architecture to achieve high-speed, low power operation. Each channel interface maintains a 64 bit data bus operating at double data rate (DDR).

Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office.

Committee(s): JC-42, JC-42.2

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This fixturing further defines the environment for thermal test of packaged microelectronic devices. Its function is to provide an alternate mounting surface for the analysis of heat flow in electronic components. The objective of the standard is to provide a high effective thermal conductivity mounting surface that can be compared equally against standard tests done in different laboratories with typical variations of less than or equal to 10%.

Committee(s): JC-15.1

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The test is applicable for evaluation, screening, monitoring, and/or qualification of all solid state devices.  The high temperature storage test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure mechanisms and time-to failure distributions of solid state electronic devices, including nonvolatile memory devices (data retention failure mechanisms). Thermally activated failure mechanisms are modeled using the Arrhenius Equation for acceleration. During the test, accelerated stress temperatures are used without electrical conditions applied. This test may be destructive, depending on time, temperature and packaging (if any).

Committee(s): JC-14.1

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This standard defines the input, output specifications and ac test conditions for devices that are designed to operate in the High Speed Unterminated Logic (HSUL_12) logic switching range, nominally 0 V to 1.2 V. The standard may be applied to ICs operating with separate VDD and VDDQ supply voltages.

Committee(s): JC-16

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This standard attempts to aid in the design of electronic systems comprised of components that operate at several different supply voltages. This document covers respectively configurable I/O voltage, receiver type and switchpoint, and driver impedance.

Committee(s): JC-16

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The purpose of this document is to specify, how LEDs thermal metrics and other thermally-related data are best identified by physical measurements using well established testing procedures defined for thermal testing of packaged semiconductor devices (published and maintained by JEDEC) and defined for characterization of light sources (published and maintained by CIE – the International Commission on Illumination).

Committee(s): JC-15

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The purpose of this JEDEC standard is to verify the workmanship and requirements of microelectronic packages and covers (lids) intended for use in fabricating hybrid microelectronic circuits/microcircuits (hereafter referred to as “microcircuits”). It is applicable for use by the package manufacturer (i.e., package components), and the microcircuit manufacturer (i.e., from incoming inspection of package components through final inspection of the completed microcircuit). This standard also encompasses and replaces JESD27, Ceramic Package Specification for Microelectronic Packages. It is meant to be used in conjunction, and to not contradict, with MIL-STD-883, Test Method 2009: External Visual.

Committee(s): JC-13, JC-13.5

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The purpose of this test method is to define a standard Electrical Test Method (ETM) that can be used to determine the thermal characteristics of single integrated circuit devices housed in some form of electrical package. This method will provide a basis for comparison of different devices housed in the same electronic package or similar devices housed in different electronic packages.

Committee(s): JC-15.1

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This specification should be used in conjunction with the overview document JESD51, Methodology for the Thermal Measurement of Component Packages (Single Semiconductor Device) [1] and the electrical test procedures described in JESD51-1, 'Integrated Circuit Thermal Measurement Method (Single Semiconductor Device' [2. The environmental conditions described in this document are specifically designed for testing of integrated circuit devices that are mounted on standard test boards with two internal copper planes [3]. This standard is not applicable to packages that have asymmetric heat flow paths to the printed board caused by such thermal enhancements as fused leads (leads connected to the die pad) or power style packages with the exposed heat slug on one side of the package.

Committee(s): JC-15.1

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Committee(s): JC-16

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This standard describes an algorithm for the execution of the isothermal test, using computer-controlled instrumentation. The primary use of this test is for the monitoring of microelectronic metallization lines at wafer level (1) in process development, to evaluate process options, (2) in manufacturing, to monitor metallization reliability and (3) to monitor/evaluate process equipment. While it is developed as a fast WLR test, it can also be an effective tool for complementing the reliability data obtained through the standard package level electromigration test.

Committee(s): JC-14, JC-14.2

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This standard defines the overall specifications, interface parameters, signaling protocols, and features for a CXL® Memory Controller ASIC. The standard includes pinout information, functional description, and configuration interface. This standard, along with other Referenced Specifications, should be treated as a whole for the purposes of defining overall functionality for CXL® Memory Controller (referred to as CMC).

Committee(s): JC-40

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This standard defines the labels that shall be applied to all CXL memory modules to fully describe the key attributes of the module. The label can be in the form of a stick-on label, silk screened onto the assembly, or marked using an alternate customer-readable format.

Committee(s): JC-45

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