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JESD231 was superseded by the renumbered JESD220-4 Version 1.01.

Committee(s): JC-64.1

NOTE: This document has been superseded by JESD220G published in December 2024, but remains available for reference purposes.

Committee(s): JC-64.1

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Editorial Terminology Update. This standard defines the DC and AC single-ended (data) and differential (clock) operating conditions, I/O impedances, and the termination and calibration scheme for 1.25 V Pseudo  Open Drain I/Os. The 1.25 V Pseudo Open Drain interface, also known as POD125, is primarily used to communicate with GDDR6 SGRAM devices.

Committee(s): JC-16

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Terminology update, see Annex. This standard defines workloads for the endurance rating and endurance verification of SSD application classes. These workloads shall be used in conjunction with the Solid State Drive (SSD) Requirements and Endurance Test Method standard, JESD218. Also see JESD219A_MT and JESD219A_TT for the supporting trace files.

Committee(s): JC-64, JC-64.8

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External visual inspection is an examination of the external surfaces, construction, marking, and workmanship of a finished package or component. External visual is a noninvasive and nondestructive test. It is functional for qualification, quality monitoring, and lot acceptance.

Committee(s): JC-14.1

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This standard specifies the host and device interface for a DDR4 NVDIMM-N, which is a DIMM that achieves non-volatility by copying SDRAM contents into non-volatile memory (NVM) when host power is lost using an Energy Source managed by either the module or the host. This standard is used in conjunction with JESD248. Item 2233.54G

Committee(s): JC-45.6

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The method described in this document applies to all reliability mechanisms associated with electronic devices. The purpose of this standard is to provide a reference for developing acceleration models for defect-related and wear-out mechanisms in electronic devices.

Committee(s): JC-14.3

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This standard defines standard specifications for features and functionality, DC & AC interface parameters and test loading for definition of the DDR5 data buffer for driving DQ and DQS nets on DDR5 LRDIMM applications. The purpose is to provide a standard for the DDR5DB01 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. Item 323.98K

Committee(s): JC-40.4

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This standard describes a serialized interface between data converters and logic devices. It contains normative information to enable designers to implement devices that communicate with other devices covered by this specification. Informative annexes are included to clarify and exemplify the document.

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This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTU32866 registered buffer with parity test for DDR2 RDIMM applications. The purpose is to provide a standard for the SSTU32866 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. This is a minor editorial revision as shown in Annex A of the document.

Committee(s): JC-40, JC-40.4

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This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUB32868 registered buffer with parity test for DDR2 RDIMM applications. SSTU32S2868 denotes a single-die implementation and SSTU32D868 denotes a dual-die implementation. This is a minor editorial revision as shown in Annex A of the document.

Committee(s): JC-40

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This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTV16859 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM applications. The purpose is to provide a standard for the SSTV16859 logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. This is a minor editorial revision, shown in Annex A of the document.

Committee(s): JC-40

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This test is used to determine the terrestrial cosmic ray Soft Error Rate (SER) sensitivity of solid state volatile memory arrays and bistable logic elements (e.g., flip-flops) by measuring the error rate while the device is irradiated in a neutron or proton beam of known flux. The results of this accelerated test can be used to estimate the terrestrial cosmic ray induced SER for a given terrestrial cosmic ray radiation environment. This test cannot be used to project alpha-particle induced SER.

Committee(s): JC-14.1

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This specification defines the standard requirements and procedures for terrestrial soft-error-rate (SER) testing of integrated circuits and reporting of results. Both real-time (unaccelerated) and accelerated testing procedures are described. At terrestrial, Earth-based altitudes, the predominant sources of radiation include both cosmic-ray radiation and alpha-particle radiation from radioisotopic impurities in the package and chip materials. An overall assessment of a deviceís SER is complete, only when an unaccelerated test is done, or accelerated SER data for the alpha-particle component and the cosmic-radiation component has been obtained.

Committee(s): JC-13, JC-13.4

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This document specifies the enclosure form factor which can be used with various type of SSD devices: outline of the top and bottom enclosure, three screw holes to mount the enclosure on the system, and two clamping holes in the top enclosure to lock to the connector. Item 318.06. This is a minor editorial revision detailed in Annex D.

Committee(s): JC-64.8

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This test method is offered as standardized procedure to determine the alpha particle Soft Error Rate (SER) sensitivity of solid state volatile memory arrays and bistable logic elements (e.g. flipflops) by measuring the error rate while the device is irradiated by a characterized, solid alph source.

Committee(s): JC-14, JC-14.1

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The test is applicable for evaluation, screening, monitoring, and/or qualification of all solid state devices.  The high temperature storage test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure mechanisms and time-to failure distributions of solid state electronic devices, including nonvolatile memory devices (data retention failure mechanisms). Thermally activated failure mechanisms are modeled using the Arrhenius Equation for acceleration. During the test, accelerated stress temperatures are used without electrical conditions applied. This test may be destructive, depending on time, temperature and packaging (if any).

Committee(s): JC-14.1

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This document defines the DDR4 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this Standard is to define the minimum set of requirements for JEDEC compliant 2 Gb through 16 Gb for x4, x8, and x16 DDR4 SDRAM devices. This standard was created based on the DDR3 standard (JESD79-3) and some aspects of the DDR and DDR2 standards (JESD79, JESD79-2). Committee Item 1716.78H

Committee(s): JC-42.3C

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The Unbiased HAST is performed for the purpose of evaluating the reliability of nonhermetic packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under noncondensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. Bias is not applied in this test to ensure the failure mechanisms potentially overshadowed by bias can be uncovered (e.g., galvanic corrosion). This test is used to identify failure mechanisms internal to the package and is destructive.

Committee(s): JC-14.1

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This standard is intended for use by SoC, ASIC, ASSP, and FPGA developers or vendors interested in incorporating a signaling protocol for hardware resetting the Serial Flash device. In is also intended for use by peripheral developers or vendors interested in providing Serial Flash devices compliant with the standard. This standard defines a signaling protocol that allows the host to reset the slaved Serial Flash device without a dedicated hardware reset pin. Item 1775.06.

Committee(s): JC-42.4

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The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet (Note this version is the latest version for use with JESD235D). Committee item 1797.99L.

Committee(s): JC-42.3C

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This document defines the 3DS DDR4 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a compliant 8 Gbit through 128 Gbit for x4, x8 3DS DDR4 SDRAM devices. This addendum was created based on the JESD79-4 DDR4 SDRAM specification. Each aspect of the changes for 3DS DDR4 SDRAM operation was considered. Item 1727.58G

Committee(s): JC-42.3C

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This version is a minor editorial adding Annex B that was left out of the original publication October 2020.

An NVDIMM-P device is defined as a LRDIMM memory module which provides host controller access to DRAM and/or other memory devices such as persistent memory.  A transactional protocol is described for NVDIMM-P, which may be used on a DDR interface allowing operation of both standard DRAM modules and NVDIMM-P modules on the same channel. Item 2233.98K.

Committee(s): JC-45.6

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This standard specifies the characteristics of the UFS card electrical interface and the memory device. This document defines the added/modified features in UFS card compared to embedded UFS device. For other common features JESD220, UFS, will be referenced.

Patents(): Samsung: US D727910, US D736212, US D736215, US D736214, US D736213, US 29/546125, US 29/546150

Committee(s): JC-64.1

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Definition for all DDRx component documents to reference. This is generic to any DDRx
technology. Item 1842.34

Committee(s): JC-42.3C

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The purpose of this standard is definition of a UFS Universal Flash Storage electrical interface and a UFS memory device. This standard defines a unique UFS feature set and includes the feature set of eMMC standard as a subset. This standard replaces JESD220C, UFS 2.1, and introduces a feature called WriteBooster.  Item 138.88.

Committee(s): JC-64.1

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This Test Method establishes an industry standard preconditioning flow for nonhermetic solid state SMDs (surface mount devices) that is representative of a typical industry multiple solder reflow operation. These SMDs should be subjected to the appropriate preconditioning sequence of this document by the semiconductor manufacturer prior to being submitted to specific in-house reliability testing (qualification and reliability monitoring) to evaluate long term reliability (which might be impacted by solder reflow).

Committee(s): JC-14.1

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The power and temperature cycling test is performed to determine the ability of a device to withstand alternate exposures at high and low temperature extremes and simultaneously the operating biases are periodically applied and removed. It is intended to simulate worst case conditions encountered in application environments. The power and temperature cycling test is considered destructive and is only intended for device qualification. This test method applies to semiconductor devices that are subjected to temperature excursions and required to power on and off during all temperatures.

Committee(s): JC-14, JC-14.1

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This document has been superseded by JESD220F, August 2022, however is available for reference only.

Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office.

Committee(s): JC-64.1

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