Global Standards for the Microelectronics Industry
Standards & Documents Search
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Document # | Date |
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SOLDER BALL PULLStatus: Reaffirmed September 2021 |
JESD22-B115A.01 | Jul 2016 |
This document describes a test method only; acceptance criteria and qualification requirements are not defined. This test method applies to solder ball pull force/energy testing prior to end-use attachment. Solder balls are pulled individually using mechanical jaws; force, fracture energy and failure mode data are collected and analyzed. Other specialized solder ball pull methods using a heated thermode, gang pulling of multiple solder joints, etc., are outside the scope of this document. Both low and high speed testing are covered by this document. This is a minor editorial revision to JESD22-A115A. Free download. Registration or login required. |
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SILICON RECTIFIER DIODES: |
JESD282B.02 | Mar 2023 |
Terminology update. This legacy document is a comprehensive users’ guide for silicon rectifier diode applications. Committee(s): JC-22.2 Free download. Registration or login required. |
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Serial NOR Security Hardware Abstraction Layer |
JESD261 | Nov 2022 |
This standard provides a comprehensive definition of the NOR cryptographic security hardware abstraction layer (HAL). It also provides design guidelines and reference software to reduce design-in overhead and facilitate the second sourcing of secure memory devices. It does not attempt to standardize any other interaction to the NOR device that is not related to cryptographic security functionality within the device. Committee(s): JC-42.4 Free download. Registration or login required. |
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Serial Interface for Data Converters |
JESD204C.1 | Dec 2021 |
This standard describes a serialized interface between data converters and logic devices. It contains normative information to enable designers to implement devices that communicate with other devices covered by this specification. Informative annexes are included to clarify and exemplify the document. Free download. Registration or login required. |
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Serial Interface for Data Converters |
JESD204D | Dec 2023 |
This standard describes a serialized interface between data converters and logic devices. It contains normative information to enable designers to implement devices that communicate with other devices covered by this specification. Informative annexes are included to clarify and exemplify the document. Committee(s): JC-16 Free download. Registration or login required. |
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SERIAL FLASH RESET SIGNALING PROTOCOL |
JESD252.01 | Apr 2021 |
This standard is intended for use by SoC, ASIC, ASSP, and FPGA developers or vendors interested in incorporating a signaling protocol for hardware resetting the Serial Flash device. In is also intended for use by peripheral developers or vendors interested in providing Serial Flash devices compliant with the standard. This standard defines a signaling protocol that allows the host to reset the slaved Serial Flash device without a dedicated hardware reset pin. Item 1775.06. Committee(s): JC-42.4 Free download. Registration or login required. |
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Serial Flash Discoverable Parameters (SFDP) |
JESD216G | Nov 2024 |
The SFDP standard defines the structure of the SFDP database within the memory device and methods used to read its data. Committee(s): JC-42.4 Free download. Registration or login required. |
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SEMICUSTOM INTEGRATED CIRCUITS (FORMERLY PUBLISHED AS STANDARD FOR GATE ARRAY BENCHMARK SET): |
JESD12 | Jun 1985 |
The purpose of these benchmarks is to provide a common set of high level functions which serve as vehicles for comparing the performance of gate arrays implemented in any technology using any internal structure. These benchmarks effectively provide an unbiased measure of gate array vendors' ability to implement a desired complex function on a particular gate array at a known level of performance. Committee(s): JC-44 Free download. Registration or login required. |
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SEMICONDUCTOR WAFER AND DIE BACKSIDE EXTERNAL VISUAL INSPECTION |
JESD22-B118A | Nov 2021 |
This inspection method is for product semiconductor wafers and dice prior to assembly. This test method defines the requirements to execute a standardized external visual inspection and is a non-invasive and nondestructive examination that can be used for qualification, quality monitoring, and lot acceptance. Committee(s): JC-14.1 Free download. Registration or login required. |
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SEMICONDUCTOR POWER CONTROL MODULES:Status: ReaffirmedJune 1992, April 1999, April 2002 |
JESD14 | Nov 1986 |
Semiconductor Power Control Modules (SPCM) are modules consisting of thyristors or transistors, or both, as the primary controlling elements. Methods of manufacture of semiconductor power control modules include the assembling of individual components and the use of semiconductor hybrids or monolithic processing technologies, or both. Committee(s): JC-22.2 Free download. Registration or login required. |
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Secure Serial Flash Bus TransactionsRelease Number: Version 1.0 |
JESD254 | Dec 2022 |
This standard describes SPI bus transactions intended to support Secure Flash operation on a serial memory device. The on-chip SFDP database described in JESD216 has been revised to include details about the secure transactions. This ballot does not describe the SFDP revisions or the secure packet structure. Patents(): Infineon- US 10868679B1 and Micron- US 9009394B2 Free download. Registration or login required. |
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SCALABLE LOW-VOLTAGE SIGNALING FOR 400 MV (SLVS-400): |
JESD8-13 | Oct 2001 |
This standard defines the input, output, and termination specifications for differential signaling in the SLVS-400 environment, nominally between 0 and 400 mV. Power supplies other than the nominal 800 mV power for the SLVS interface are not specified. Committee(s): JC-16 Free download. Registration or login required. |
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SALT ATMOSPHEREStatus: Reaffirmed September 2020 |
JESD22-A107C | Apr 2013 |
Salt atmosphere is a destructive, accelerated stress that simulates the effects of severe seacoast atmosphere on all exposed surfaces. Such stressing and post-stress testing determine the resistance of solid-state devices to corrosion and may be performed on commercial and industrial product in molded or hermetic packages. Free download. Registration or login required. |
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RF BIASED LIFE (RFBL) TESTStatus: Reaffirmed October 2024 |
JESD226 | Jan 2013 |
This stress method is used to determine the effects of RF bias conditions and temperature on Power Amplifier Modules (PAMs) over time. These conditions are intended to simulate the devices’ operating condition in an accelerated way, and they are expected to be applied primarily for device qualification and reliability monitoring. The purpose of this test is for use to determine the effects of nominal DC and RF bias conditions and high temperature on Power Amplifier Modules (PAMs) over time. It simulates the devices’ operating condition in an accelerated way, and is primarily intended for device qualification testing and reliability monitoring which stresses all of the modules’ thermal and electrical failure mechanisms anticipated in typical use. Committee(s): JC-14.7 Free download. Registration or login required. |
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REVERSE RECOVERY CHARACTERISTICS OF SILICON DIODES: RESCINDED June 2002.Status: Rescinded |
JESD41 | May 1995 |
Committee(s): JC-22.1 Free download. Registration or login required. |
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RESISTANCE TO SOLDER SHOCK FOR THROUGH-HOLE MOUNTED DEVICESStatus: Reaffirmed February 2023 |
JESD22-B106E | Nov 2016 |
This test method is used to determine whether solid state devices can withstand the effect of the temperature shock to which they will be subjected during soldering of their leads in a solderwave process and/or solder fountain (rework/replacement) process. The heat is conducted through the leads into the device package from solder heat at the reverse side of the board. Committee(s): JC-14.1 Free download. Registration or login required. |
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REQUIREMENTS FOR HANDLING ELECTROSTATIC-DISCHARGE-SENSITIVE (ESDS) DEVICES - SUPERSEDED BY EIA-625, November 1994.Status: Superseded |
JESD42 | Mar 1994 |
Committee(s): JC-13 Free download. Registration or login required. |
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Requirements for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices |
JESD625C.01 | Mar 2024 |
This standard applies to devices susceptible to damage by electrostatic discharge greater than 100 volts human body model (HBM) and 200 volts charged device model (CDM). Free download. Registration or login required. |
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RELIABILITY QUALIFICATION OF POWER AMPLIFIER MODULESStatus: Reaffirmed October 2024 |
JESD237 | Mar 2014 |
This standard is intended to identify a core set of qualification tests that apply specifically for Power Amplifier Modules and their primary application in mobile devices such as cellular phones. This standard is intended to describe specific stresses and failure mechanisms that are specific to compound semiconductors and power amplifier modules. It is intended to establish more meaningful and efficient qualification testing. Committee(s): JC-14.7 Free download. Registration or login required. |
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RANGES AND CONDITIONS FOR SPECIFYING BETA FOR LOW POWER, AUDIO FREQUENCY TRANSISTORS FOR ENTERTAINMENT SERVICE:Status: ReaffirmedApril 1981, April 1999, March 2009 |
JESD302 | Jan 1965 |
This standard establishes the preferred rating ranges and conditions for specifying beta for low power, audio frequency transistors intended for entertainment service. Formerly known as RS-302 and EIA-302. Committee(s): JC-25 Free download. Registration or login required. |
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RADIO FRONT END - BASEBAND DIGITAL PARALLEL (RBDP) INTERFACE |
JESD207.01 | Mar 2023 |
Terminology update. This document establishes an interface standard for the data path and control plane interface functions for an RFIC component and/or a BBIC component. Committee(s): JC-61 Free download. Registration or login required. |
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RADIO FRONT END - BASEBAND (RF-BB) INTERFACE |
JESD96A.01 | Mar 2023 |
Terminology update. This standard establishes the requirements for an interface between Radio Front End (RF) and Baseband (BB) integrated circuits (IC). Committee(s): JC-61 Free download. Registration or login required. |
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QUALITY SYSTEM ASSESSMENT - SUPERSEDED BY ANSI/EIA-670, June 1997.Status: Superseded |
JESD39-A | Jun 1997 |
Committee(s): JC-14.4 Free download. Registration or login required. |
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QUALITY SYSTEM ASSESSMENT (SUPERSEDES EIA670): |
JESD670A | Oct 2013 |
This standard provides a checklist that is intended as a tool to allow users to assess the level of compliance of a quality management system to the requirements ISO 9001:2008. The questions in this checklist are of a generic nature and intended to be applicable to all organizations, not just those involved in the electronics industry. It can be useful while performing self-assessments of the organization or other internal audit procedures. It is not intended for use by a contracted third party registrar during a formal audit to the requirements of ISO 9001:2008. Committee(s): JC-14.4 |
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PSO-N/PQFN PINOUTS STANDARDIZED FOR 14-, 16-, 20-, AND 24-LEAD LOGIC FUNCTIONS: |
JESD75-6 | Mar 2006 |
This standard defines device pinouts for 14-, 16-, 20-, and 24-lead logic functions. This pinout standard specifically applies to the conversion of DIP-packaged logic devices to PSO-N/PQFN packages logic devices The purpose of this standard is to provide a pinout standard for 14-, 16-, 20-, and 24-lead logic devices offered in 14-, 16-, 20-, and 24-lead PSO-N/PQFN packages for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use Free download. Registration or login required. |
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PRODUCT DISCONTINUANCEStatus: Supersededby J-STD-048, November 2014 |
JESD48C | Dec 2011 |
This standard establishes the requirements for timely customer notification of planned product discontinuance, which will assist customers in managing end-of-life supply, or to transition on-going requirements to alternate products. |
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PROCUREMENT STANDARD FOR KNOWN GOOD DIE (KGD) |
JESD49B.01 | Oct 2023 |
This standard facilitates the procurement and use of semiconductor die products provided in bare or bumped die form, and provides requirements and guidance to die suppliers as to the levels of as-delivered performance, quality and reliability expected. It also reflects the special needs of die product customers in terms of design and application data. Committee(s): JC-13 Free download. Registration or login required. |
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PROCUREMENT QUALITY OF SOLID STATE COMPONENTS BY GOVERNMENT CONTRACTORS - SUPERSEDED BY EIA-623, July 1994Status: Superseded |
JESD40 | Jul 1994 |
Committee(s): JC-13 Free download. Registration or login required. |
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PROCEDURE FOR WAFER-LEVEL-TESTING OF THIN DIELECTRICS:Status: Rescinded |
JESD35A | Apr 2001 |
JESD35A was rescinded by the committee in June 2024 and has been superseded by JESD263. The revised JESD35 is intended for use in the MOS Integrated Circuit manufacturing industry. It describes procedures developed for estimating the overall integrity and reliability of thin gate oxides. Three basic test procedures are described, the Voltage-Ramp (V-Ramp), the Current-Ramp (J-Ramp) and the new Constant Current (Bounded J-Ramp) test. Each test is designed for simplicity, speed and ease of use. The standard has been updated to include breakdown criteria that are more robust in detecting breakdown in thinner gate oxides that may not experience hard thermal breakdown. Committee(s): JC-14.2 |
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PROCEDURE FOR WAFER-LEVEL DC CHARACTERIZATION OF BIAS TEMPERATURE INSTABILITIESStatus: Reaffirmed September 2021 |
JESD241 | Dec 2015 |
This Bias Temperature Instability (BTI) stress/test procedure is proposed to provide a minimum recommendation for a simple and consistent comparison of the mean threshold voltage (Vth) BTI induced shift. The procedure enables comparison of stable and manufacturable CMOS processes and technologies in which the process variation is low and the yield is mature. Qualification and accept-reject criteria are not given in this document. Committee(s): JC-14.2 Free download. Registration or login required. |
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PROCEDURE FOR CHARACTERIZING TIME-DEPENDENT DIELECTRIC BREAKDOWN OF ULTRA-THIN GATE DIELECTRICS:Status: Rescinded |
JESD92 | Aug 2003 |
JESD92 was rescinded by the committee in June 2024 and has been superseded by JESD263. This document defines a constant voltage stress test procedure for characterizing time-dependent dielectric breakdown or 'wear-out' of thin gate dielectrics used in integrated circuit technologies. The test is designed to obtain voltage and temperature acceleration parameters required to estimate oxide life at use conditions. The test procedure includes sophisticated techniques to detect breakdown in ultra-thin films that typically exhibit large tunneling currents and soft or noisy breakdown characteristics. This document includes an annex that discusses test structure design, methods to determine the oxide electric field in ultra-thin films, statistical models, extrapolation models, and example failure-rate calculations |
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PRECONDITIONING OF NONHERMETIC SURFACE MOUNT DEVICES PRIOR TO RELIABILITY TESTING |
JESD22-A113I | Apr 2020 |
This Test Method establishes an industry standard preconditioning flow for nonhermetic solid state SMDs (surface mount devices) that is representative of a typical industry multiple solder reflow operation. These SMDs should be subjected to the appropriate preconditioning sequence of this document by the semiconductor manufacturer prior to being submitted to specific in-house reliability testing (qualification and reliability monitoring) to evaluate long term reliability (which might be impacted by solder reflow). Committee(s): JC-14.1 Free download. Registration or login required. |
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POWER MOSFETS: |
JESD24 | Jul 1985 |
This standard contains a listing of terms and definitions and letter symbols; a description of established procedures that are followed in the assignment of semiconductor-industry-type designations to power transistors; electrical verification test; thermal characteristics; and a user's guide. Committee(s): JC-25 Free download. Registration or login required. |
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Power Cycling |
JESD22-A122B | Nov 2023 |
This Test Method establishes a uniform method for performing solid state device package power cycling stress test. Free download. Registration or login required. |
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POWER AND TEMPERATURE CYCLING |
JESD22-A105D | Jan 2020 |
The power and temperature cycling test is performed to determine the ability of a device to withstand alternate exposures at high and low temperature extremes and simultaneously the operating biases are periodically applied and removed. It is intended to simulate worst case conditions encountered in application environments. The power and temperature cycling test is considered destructive and is only intended for device qualification. This test method applies to semiconductor devices that are subjected to temperature excursions and required to power on and off during all temperatures. Free download. Registration or login required. |
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POD18 - 1.8 V PSEUDO OPEN DRAIN I/O |
JESD8-19 | Dec 2006 |
This standard defines the dc and ac single-ended (data) and differential (clock) operating conditions, I/O impedances, and the termination and calibration scheme for 1.8 V Pseudo Open Drain I/Os. The 1.8 V Pseudo Open Drain interface, also known as POD18, is primarily used to communicate with GDDR3 SGRAM devices. Committee(s): JC-16 Free download. Registration or login required. |
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POD15 - 1.5 V PSEUDO OPEN DRAIN I/O |
JESD8-20A.01 | Aug 2022 |
Terminology Update. This standard defines the dc and ac single-ended (data) and differential (clock) operating conditions, I/O impedance, and the termination and calibration scheme for 1.5 V Pseudo Open Drain I/Os. The 1.5 V Pseudo Open Drain interface, also known as POD15, is primarily used to communicate with GDDR4 and GDDR5 SGRAM devices. Item 135.01 Committee(s): JC-16 Free download. Registration or login required. |
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POD135 - 1.35 V PSEUDO OPEN DRAIN I/O |
JESD8-21C.01 | Jun 2022 |
Editorial, Terminology Update. This standard defines the dc and ac single-ended (data) and differential (clock) operating conditions, I/O impedance's, and the termination and calibration scheme for 1.35 V Pseudo Open Drain I/Os. The 1.35 V Pseudo Open Drain interface, also known as POD135, is primarily used to communicate with GDDR5 or GDDR5M SGRAM devices. Item 146.01B Committee(s): JC-16 Free download. Registration or login required. |
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POD125 - 1.25 V PSEUDO OPEN DRAIN I/O |
JESD8-30A.01 | Jun 2022 |
Editorial Terminology Update. This standard defines the DC and AC single-ended (data) and differential (clock) operating conditions, I/O impedances, and the termination and calibration scheme for 1.25 V Pseudo Open Drain I/Os. The 1.25 V Pseudo Open Drain interface, also known as POD125, is primarily used to communicate with GDDR6 SGRAM devices. Committee(s): JC-16 Free download. Registration or login required. |
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POD12 ‐ 1.2 V PSEUDO OPEN DRAIN INTERFACE |
JESD8-24 | Aug 2011 |
This document defines the 1.2 V Pseudo Open Drain Interface family of interface standards, POD12, which are generally expected to be implemented with differential amp-based input buffers that, when in single-ended mode, employ an externally supplied (or internal supplied) reference voltage controlled trip-point. Committee(s): JC-16 Free download. Registration or login required. |
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POD10-1.0 V PSUEDO OPEN DRAIN INTERFACE |
JESD8-25 | Sep 2011 |
This document defines the 1.0 V Pseudo Open Drain Interface family of interface standards, POD10, which are generally expected to be implemented with differential amp-based input buffers that, when in single-ended mode, employ an externally supplied (or internal supplied) reference voltage controlled trip-point. Committee(s): JC-16 Free download. Registration or login required. |
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PMIC5100 POWER MANAGEMENT IC STANDARD, Rev 1.03 |
JESD301-2 | Oct 2022 |
This standard defines the specification of interface parameters, signaling protocols, and features for PMIC devices used for memory module applications. The designation PMIC5100 refers to the device specified by this document. The purpose is to provide a standard for the PMIC5100 device for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. Item 336.01C Committee(s): JC-40.1 Free download. Registration or login required. |
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PMIC5020 Power Management IC StandardRelease Number: Version 1.0.1 |
JESD301-4 | Apr 2024 |
This standard defines the specifications of interface parameters, signaling protocols, and features for PMIC device as used for memory module applications. The designation PMIC5020 refers to the device specified by this document. The purpose is to provide a standard for the PMIC5020 device for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. Free download. Registration or login required. |
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PMIC5000/PMIC5010 Power Management IC Standard |
JESD301-1A.03 | Feb 2025 |
This standard defines the specifications of interface parameters, signaling protocols, and features for PMIC device as used for memory module applications. The designation PMIC5000, PMIC5010 refers to the device specified by this document. The purpose is to provide a standard for the PMIC5000, PMIC5010 device for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. This is a minor update to correct the document name, and also remove the extraneous hard return in the middle of the description between “as” and “used”. Committee(s): JC-40.1 Free download. Registration or login required. |
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PHYSICAL DIMENSION:Status: ReaffirmedJune 2006, January 2016, September 2021 |
JESD22-B100B | Jun 2003 |
The standard provides a method for determining whether the external physical dimensions of the device are in accordance with the applicable procurement document. This revision includes a change in details to be specified by the procurement document. Committee(s): JC-14.1 Free download. Registration or login required. |
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Package Warpage Measurement of Surface-Mount Integrated Circuits at Elevated Temperature |
JESD22-B112C | Nov 2023 |
This test method is to measure the deviation from uniform flatness of an integrated circuit package body for the range of thermal conditions experienced during the surface-mount soldering operation. Free download. Registration or login required. |
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OVERVIEW OF METHODOLOGIES FOR THE THERMAL MEASUREMENT OF SINGLE- AND MULTI-CHIP, SINGLE- AND MULTI-PN-JUNCTION LIGHT-EMITTING DIODES (LEDS) |
JESD51-50A | Nov 2022 |
This document provides an overview of the methodology necessary for making meaningful thermal measurements on high-power light-emitting diodes (LEDs) built on single or multiple chips with one or more pn-junctions per chip. The actual methodology components are contained in separate detailed documents. Committee(s): JC-15 Free download. Registration or login required. |
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OUTLIER IDENTIFICATION AND MANAGEMENT SYSTEM FOR ELECTRONIC COMPONENTS, RESCINDED January 2009. Replaced by JESD50.Status: RescindedJanuary 2009 |
JESD62-A | May 2002 |
Relevant JESD62 content has been consolidated into JESD50B, published October 2008 -Special Requirments for Maverick Product Elimination-. Committee(s): JC-14.3 Free download. Registration or login required. |
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NUMBERING OF LIKE-NAMED TERMINAL FUNCTIONS IN SEMICONDUCTOR DEVICES AND DESIGNATION OF UNITS IN MULTIPLE-UNIT SEMICONDUCTOR DEVICES:Status: Reaffirmed November 1995, September 2009 |
JESD321-C | Feb 1987 |
This standard gives the system for numbering like-named electrodes or terminal functions in semiconductor devices and for assigning numerical designations to units of multiple-unit semiconductor devices. It applies to both integrated circuits and discrete devices. Formerly known as EIA-321-C and ANSI/EIA-321-C-1987. Committee(s): JC-10 Free download. Registration or login required. |
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NAND Flash Interface Interoperability |
JESD230G | Oct 2024 |
This standard was jointly developed by JEDEC and the Open NAND Flash Interface Workgroup, hereafter referred to as ONFI. This standard defines a standard NAND flash device interface interoperability standard that provides means for system be designed that can support Asynchronous SDR, Synchronous DDR and Toggle DDR NAND flash devices that are interoperable between JEDEC and ONFI member implementations. Free download. Registration or login required. |
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MULTIMEDIACARD (MMC) MECHANICAL STANDARD |
JESD84-C01 | Dec 2007 |
This document is a mechanical product specification for a removable non-volatile flash memory device using the MMC interface version 4.2 The electrical specification for the MMC interface version 4.2 is document JESD84-B42 Free download. Registration or login required. |
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MULTIMEDIACARD (MMC) ELECTRICAL STANDARD, STANDARD CAPACITY (MMCA, 4.1) |
JESD84-B41 | Jun 2007 |
This document provides a comprehensive definition of the MultiMediaCard, its environment, and handling. It also provides design guidelines and defines a tool box of macro functions and algorithms intended to reduce design-in costs. Patents(): Samsung; Qimonda; Nokia Free download. Registration or login required. |
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MULTIMEDIACARD (MMC) ELECTRICAL STANDARD, HIGH CAPACITY (MMCA, 4.2) |
JESD84-B42 | Jul 2007 |
The purpose of the specification is the definition of the e•MMC, its environment and handling. It provides guidelines for systems designers. The specification also defines a tool box (a set of macro functions and algorithms) that contributes to reducing design-in costs. Free download. Registration or login required. |
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MULTI-WIRE MULTI-LEVEL I/O STANDARD |
JESD247 | Jun 2016 |
This standard defines the DC and AC operating conditions, I/O impedances, termination characteristics, and compliance test methods of I/O drivers and receivers used in multi-wire, multi-level signaling interfaces. The multi-wire interfaces defined by this specification all utilize quaternary signal levels. Item 153.00 Patents(): Kandou Committee(s): JC-16 Free download. Registration or login required. |
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MOISTURE-INDUCED STRESS SENSITIVITY FOR PLASTIC SURFACE MOUNT DEVICES - SUPERSEDED BY J-STD-020A, April 1999.Status: Rescinded, May 2000 |
JESD22-A112-A | Nov 1995 |
J-STD-020 is now on revision F. Free download. Registration or login required. |
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METHODS FOR CALCULATING FAILURE RATES IN UNITS OF FITS |
JESD85A | Jul 2021 |
This standard establishes methods for calculating failure rates in units of FITs by using data in varying degrees of detail such that results can be obtained from almost any data set. The objective is to provide a reference to the way failure rates are calculated. Committee(s): JC-14.3 Free download. Registration or login required. |
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METHODOLOGY FOR THE THERMAL MEASUREMENT OF COMPONENT PACKAGES (SINGLE SEMICONDUCTOR DEVICE) |
JESD51 | Dec 1995 |
This standard and its subsequent addendum's, provides a standard for thermal measurement that, if followed fully, will provide correct and meaningful data that will allow for determination of junction temperature for specific conditions. The data can be used for package design evaluation, device characterization and reliability predictions. Free download. Registration or login required. |
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METHOD OF DIODE Q MEASUREMENTStatus: Reaffirmed April 1999, April 2002 |
JESD381-A | Nov 1981 |
This standard was updated and revised for the purpose of clarifying the method used to measure Q of a Voltage-Variable-Capacitance Diode in the low VHF range using an RF admittance bridge. Originally published November 1981. Approved as ANSI/EIA-381-A-1992, July 1992. Became JESD381-A after ANSI expiration July 2002. Committee(s): JC-22.4 Free download. Registration or login required. |
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METHOD FOR DEVELOPING ACCELERATION MODELS FOR ELECTRONIC DEVICE FAILURE MECHANISMS |
JESD91B | Mar 2022 |
The method described in this document applies to all reliability mechanisms associated with electronic devices. The purpose of this standard is to provide a reference for developing acceleration models for defect-related and wear-out mechanisms in electronic devices. Committee(s): JC-14.3 Free download. Registration or login required. |
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METHOD FOR CHARACTERIZING THE ELECTROMIGRATION FAILURE TIME DISTRIBUTION OF INTERCONNECTS UNDER CONSTANT-CURRENT AND TEMPERATURE STRESSStatus: Reaffirmed September 2018 |
JESD202 | Mar 2006 |
This is an accelerated stress test method for determining sample estimates and their confidence limits of the median-time-to-failure, sigma, and early percentile of a log-Normal distribution, which are used to characterize the electromigration failure-time distribution of equivalent metal lines subjected to a constant current-density and temperature stress. Failure is defined as some pre-selected fractional increase in the resistance of the line under test. Analysis procedures are provided to analyze complete and singly, right-censored failure-time data. Sample calculations for complete and right-censored data are provided in Annex A. The analyses are not intended for the case when the failure distribution cannot be characterized by a single log-Normal distribution. Free download. Registration or login required. |