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The purpose is to provide a standard of BiCMOS Logic series specifications to provide for uniformity, multiplicity of sources, elimination of confusion, and ease of device specification and design by users.

Committee(s): JC-40

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This standard describes electrical parameters for this class of CMOS devices.

Committee(s): JC-40.2

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This standard defines the register support devices needed for standard height and low profile registered PC133 SDRAM DIMM modules. The objective of the standard is to clearly define the functionality, pinout and electrical characteristics required for this type of SDRAM module.

Committee(s): JC-40

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The purpose of this standard is to provide for uniformity, multiplicity of sources, elimination of confusion, and ease of device specification and design by users. The standard covers specifications for description of '54/74FCTXXXX' series fast CMOS TTL compatible devices.

Committee(s): JC-40.2

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The purpose is to provide a standard of BiCMOS Logic series specifications for uniformity, multiplicity of sources, elimination of confusion, and ease of device specification and design by users.

Committee(s): JC-40

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This method updates the standard procedure for characterizing the switching of signal or switching diodes when a step function of forward current is applied. The objective is to provide a standard so that accurate comparisons can be made. Formerly known as EIA-286-A (February 1991), ANSI/EIA-286-A-1991. Became JESD286-B after revision, February 2000.

Committee(s): JC-22.4

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This standard specifies the standard for the measurement of small-signal transistor scattering parameters. Formerly known as RS-435 and/or EIA-435

Committee(s): JC-25

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This standard details techniques for estimating the values of a two parameter lognormal distribution from complete lifetime data (all samples in an experiment have failed) or singly right-censored lifetime data (the experiment have failed) or singly right-censored lifetime data gathered from rapid stress test; however, not all types of failure data can be analyzed with these techniques.

Committee(s): JC-14.2

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This newly revised test method provides a procedure for measuring the temperature coefficient of resistance, TCR(T), of thin-film metallizations used in microelectronic circuits and devices. Procedures are also provided to use the TCR(T) to determine the temperature of a metallization line under Joule-heating conditions and to determine the ambient temperature where the metallization line is used as a temperature sensor. Originally, the method was intended only for aluminum-based metallizations and for other metallizations that satisfy the linear dependence and stability stipulations of the method. The method has been revised to make it explicitly applicable to copper-based metallizations, as well, and at temperatures beyond where the resistivity of copper is no longer linearly dependent on temperature (beyond approximately 200 °C). Using the TCR(T) measured for copper in the linear-dependent region, a factor is used to correct the calculated temperature at these higher temperatures.

Committee(s): JC-14.2

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STAPL is a vendor- and platform-independent language for programming and testing devices via the IEEE standard 1149.1 interface, commonly known as JTAG. STAPL enables programming of designs into programmable logic devices (PLDs) offered by a variety of PLD vendors. STAPL is also suitable for testing 1149.1-compliant devices.

Committee(s): JC-42.1

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This document is intended to be used by Original Component Manufacturers who deliver electronic components and Original Equipment Manufacturers who are the platform system integrators. It is intended to be applied prior to delivery by the OCMs and may be used by OEM system engineers and procuring activities as well as U.S Government Department of Defense system engineers, procuring activities and repair centers. This Standard establishes the instrumentation, techniques, criteria, and methods to be utilized to quantify the amount of Lead (Pb) in Tin-Lead (Sn/Pb) alloys and electroplated finishes containing at least 3 weight percent (wt%) Lead (Pb) using X-Ray Fluorescence (XRF) equipment.  Reaffirmed June 2023

Committee(s): JC-13

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This document describes design of test structures needed to assess the reliability of aluminum-copper, refractory metal barrier interconnect systems. This includes any metal interconnect system where a refractory metal barrier or other barrier material prevents the flow of aluminum and/or copper metal ions from moving between interconnect layers. This document is not intended to show design of test structures to assess aluminum or aluminum-copper alloy systems, without barriers to Al and Cu ion movement, nor for Cu only metal systems. Some total interconnect systems might not include barrier materials on all metal layers. The structures in this standard are designed for cases where a barrier material separates two Al or Al alloy metal layers. The purpose of this document is to describe the design of test structures needed to assess electromigration (EM) and stress-induced-void (SIV) reliability of AlCu barrier metal systems.

Committee(s): JC-14.2, JC-14.21

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This standard establishes a defined method and conditions for performing a temperature-humidity life test with bias applied. The test is used to evaluate the reliability of nonhermetic packaged solid state devices in humid environments. It employs high temperature and humidity conditions to accelerate the penetration of moisture through external protective material or along interfaces between the external protective coating and conductors or other features that pass through it. This revision enhances the ability to perform this test on a device which cannot be biased to achieve very low power dissipation.

Committee(s): JC-14, JC-14.1

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This standard defines the input, output specifications and ac test conditions for devices that are designed to operate in the SSTL_18 logic switching range, nominally 0 V to 1.8 V. The standard may be applied to ICs operating with separate VDD and VDDQ supply voltages. The VDD value is not specified in this standard; however VDD and VDDQ will have the same voltage level in many cases.

Committee(s): JC-16

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This standard will be useful to anyone engaged in handling semiconductor devices and integrated circuits that are subject to permanent damage due to electrostatic potentials. The standard establishes a symbol and label that will gain the attention of those persons who might inflict electrostatic damage to the device. The label which is placed on the lowest practical level of packaging contains the words 'ATTENTION - OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES'. The symbol contained in this label, which may be used on the device itself, shows a hand in a triangle with a bar through it. Formerly known as EIA-471.

Committee(s): JC-14, JC-14.3

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This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the devices’ operating condition in an accelerated way, and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as burn-in, may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this document.

Committee(s): JC-14, JC-14.1

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A revised and significantly expanded reference for technical writers and educators, manufacturers, buyers and users of discrete semiconductor and optoelectronic devices, is now available. This document includes extensive information on: letter symbol conventions; diodes and rectifiers (including signal, rectifier, microwave, tunnel and backward, voltage-regulator, voltage-reference, current regulator, and varactor diodes); transistors (including FETs, JFETs, and IGBTs); photosensitive devices, photoemitters, and optocouplers; thyristors and PUTs; and transient voltage suppressors. Terms and symbols, with their definitions, are arranged alphabetically by product type. Where applicable, graphical symbols are also included. The purpose of this standard is to promote the uniform use of symbols, abbreviations, terms, and definitions throughout the semiconductor industry.

Committee(s): JC-10

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This standard will be useful to users, manufacturers, educators, technical writers, and others interested in the characterization, nomenclature, and classification of microelectronics devices. There are general guidelines for both letter symbols and abbreviations applicable to all integrated circuits, and detailed sections for digital ICs, linear (analog) ICs, interface ICs (including D/A and A/D converters), voltage regulators, charge-transfer devices. The standard lists and defines more than 400 of the most common physical and electrical terms applicable to these devices and shows the industry-standard symbol and abbreviations that have been established for such terms.

Committee(s): JC-10

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This standard covers the design of printed circuit boards (PCBs) used in the thermal characterization of Pin Grid Array (PGA) packages. It is intended to be used in conjunction with the JESD51 series of standards that cover the test methods and test environments. JESD51-11 was developed to give a figure-of-merit of thermal performance that allows for accurate comparisons of packages from different suppliers. It can be used to give a first order approximation of system performance and, in conjunction with the other JESD51 PCB standards, allows for comparisons of the various package families.

Committee(s): JC-15.1

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This test method is offered as standardized procedure to determine the alpha particle Soft Error Rate (SER) sensitivity of solid state volatile memory arrays and bistable logic elements (e.g. flipflops) by measuring the error rate while the device is irradiated by a characterized, solid alph source.

Committee(s): JC-14, JC-14.1

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This test method is offered as a standardized procedure to determine the total dose limit of DRAMs by measuring its refresh time tRef degradation after the device is irradiated with an X-Ray dose. This test method is applicable to any packaged device that contains a DRAM die or any embedded DRAM structure. Some indirect test methods such as wafer level characterization of total dose induced changes in leakage of access transistors are not described in this standard but are permissible as long as a good correlation is established.

Committee(s): JC-14.1

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This standard details the procedures for the measurement of characteristic bulk material properties of moisture diffusivity and water solubility in organic materials used in the packaging of electronic devices. These two material properties are important parameters for the effective reliability performance of plastic packaged surface mount devices after exposure to moisture and subjected to high temperature solder reflow.

Committee(s): JC-14.1

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This Test Method covers the minimum requirements that should be in effect for the evaluation and acceptance of polymeric materials for use in industrial, military, space, and other special-condition products which may require capabilities beyond standard commercial microelectronics applications. It is not the intent of this Publication to specify a material, but to evaluate the material to assure that the quality and reliability of the microelectronic devices are not compromised. This document replaces JEP105, JEP107 and JEP112.

Committee(s): JC-13.5

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The test methods described in this Standard are generally applicable to alloy-like devices for which the usual simplified equivalent circuits can be employed. Formerly known as EIA-284-A (November 1963). Became JESD284-A when reaffirmed in October 2002.

Committee(s): JC-25

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This test method defines requirements and procedures for ground simulation and single event effects (SEE) and implementation of the method in testing integrated circuits. This standard is valid when using a cyclotron or Van de Graaff accelerator. Microcircuits under test must be delidded. The ions used at the facilities have an atomic number Z > 2. It does not apply to SEE testing that uses protons, neutrons, or other lighter particles. This standard is designed to eliminate any misunderstanding between users of the method and test facilities, to minimize delays, and to promote standardization of testing and test data.

Committee(s): JC-13.4

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The Test Trace file is a supporting file for implementation of the endurance verification client workload and is used in conjunction with JESD219A. This Test Trace is derived from the 128 GB Master Trace using the compression method described in JESD219 to enable testing on SSDs with a capacity range of 64 GB to 128 GB. All characteristics of this Test Trace are identical to the Master Trace except that the maximum LBA represents an SSD user capacity of 64 GB.

Committee(s): JC-64.8

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This standard describes the method to be used for the measurement of small-signal VHF-UHF transistor short-circuit forward current transfer ratio, in preparing data sheets for JEDEC registration of low power transistors. Formerly known as RS-371 and/or EIA-371.

Committee(s): JC-25

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This noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution. Formerly known as RS-353 and/or EIA-353

Committee(s): JC-25

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This document and the associated series of documents are intended to promote the continued development of modeling methods, while providing a coherent framework for their use by defining a common vocabulary to discuss modeling, creating requirements for what information should be included in a thermal modeling report, and specifying modeling procedures, where appropriate, and validation methods. This document provides an overview of the methodology necessary for performing meaningful thermal simulations for packages containing semiconductor devices. The actual methodology components are contained in separate detailed documents.

Committee(s): JC-15, JC-15.1

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