Global Standards for the Microelectronics Industry
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Document # | Date |
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REPLAY PROTECTED MONOTONIC COUNTER (RPMC) FOR SERIAL FLASH DEVICES |
JESD260 | Apr 2021 |
This document provides the requirements for an additional block called as Replay Protection Monotonic Counter. (RPMC) Replay Protection provides a building block towards providing additional security. This block requires modifications in both a Serial Flash device and Serial Flash Controller. The standard defines new commands for Replay Protected Monotonic Counter operations. A device that supports RPMC can support these new commands as defined in this standard. Committee(s): JC-42.4 Free download. Registration or login required. |
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Temperature Range and Measurement Standards for Components and Modules |
JESD402-1B | Sep 2024 |
This document specifies standard temperature ranges that may be used, by way of referencing JESD402-1, in other standards, specifications, and datasheets when defining temperature related specifications. Committee(s): JC-42 Free download. Registration or login required. |
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0.5 V LOW VOLTAGE SWING TERMINATED LOGIC (LVSTL05) |
JESD8-33 | Jun 2019 |
This standard defines power supply voltage range, dc interface, switching parameter and overshoot/undershoot for high speed low voltage swing terminated NMOS driver family digital circuits. The specifications in this standard represent a minimum set of interface specifications for low voltage terminated circuits. Item 159.03 Committee(s): JC-16 Free download. Registration or login required. |
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0.6 V LOW VOLTAGE SWING TERMINATED LOGIC (LVSTL06) |
JESD8-29 | Dec 2016 |
This standard defines power supply voltage range, dc interface, switching parameter and overshoot/undershoot for high speed low voltage swing terminated NMOS driver family digital circuits with 0.6V supply. The specifications in this standard represent a minimum set of interface specifications for low voltage terminated circuits. Item 180.24. Committee(s): JC-16 Free download. Registration or login required. |
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1.0 V +/- 0.1 V (NORMAL RANGE) AND 0.7 V - 1.1 V (WIDE RANGE) POWER SUPPLY VOLTAGE AND INTERFACE STANDARD FOR NONTERMINATED DIGITAL INTEGRATED CIRCUITS: |
JESD8-14A.01 | Sep 2007 |
This new standard provides specifications that will be used by several companies in new 1.0 V products designed in 0.10-0.12 um CMOS technologies, and in components that interface with them. This standard defines power supply voltage ranges, dc interface and switching parameters for a high speed, low voltage family of nonterminated digital circuits driving/driven by parts of the same family, or mixed families which comply with the input receiver specifications. The specifications in this standard represent a minimum set of interface specifications for CMOS compatible circuits. This version is a minor editorial revision as noted in Annex A. Committee(s): JC-16 Free download. Registration or login required. |
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1.05 V CMOS |
JESD8-34 | Apr 2020 |
This standard defines the input, output specifications and ac test conditions for devices that are designed to operate narrow range 1.05 V CMOS level. Item 159.01 Committee(s): JC-16 Free download. Registration or login required. |
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1.2 V +/- 0.1 V (NORMAL RANGE) AND 0.8 - 1.3 V (WIDE RANGE) POWER SUPPLY VOLTAGE AND INTERFACE STANDARD FOR NONTERMINATED DIGITAL INTEGRATED CIRCUITS: |
JESD8-12A.01 | Sep 2007 |
This standard defines power supply voltage ranges, dc interface and switching parameters for a high speed, low voltage family of nonterminated digital circuits driving/driven by parts of the same family, or mixed families which comply with the input receiver specifications. The specifications in this standard represent a minimum set of interface specifications for CMOS compatible circuits. Committee(s): JC-16 Free download. Registration or login required. |
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1.2 V HIGH-SPEED LVCMOS (HS_LVCMOS) INTERFACE |
JESD8-26 | Sep 2011 |
This standard defines the dc and ac input levels, output levels, and input overshoot and undershoot specifications for the 1.2 V High-speed LVCMOS (HS_LVCMOS) interface. The non-terminated interface has a switching range that is nominally expected to be 0 V to 1.2 V and is primarily intended to support communications with Wide I/O SDRAM devices. Committee(s): JC-16 Free download. Registration or login required. |
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1.8 V HIGH-SPEED LVCMOS (HS_LVCMOS) INTERFACE |
JESD8-31 | Mar 2018 |
This standard defines the dc and ac input levels, output levels, and input overshoot and undershoot specifications for the 1.8 V High-speed LVCMOS (HS_LVCMOS) interface. The non-terminated interface has a switching range that is nominally expected to be 0 V to 1.8 V. Committee(s): JC-16 Free download. Registration or login required. |
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2.5 V BiCMOS LOGIC DEVICE FAMILY SPECIFICATION WITH 5 V TOLERANT INPUTS AND OUTPUTS: |
JESD70 | Jun 1999 |
The purpose is to provide a standard for 2.5 V nominal supply voltage logic devices, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use, thus providing compatibility between devices operating between 2.3 V and 2.7 V supply voltages, as well as overvoltage tolerance with devices operating at 3.3 V, or 5 V. Committee(s): JC-40 Free download. Registration or login required. |
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300 mV INTERFACE |
JESD8-28 | Jun 2015 |
This standard is to define and interface with a CMOS rail to rail signal that uses a 300 mV signal swing. This specification defines the maximum signaling rate, the signal Committee(s): JC-16 Free download. Registration or login required. |
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A PROCEDURE FOR MEASURING N-CHANNEL MOSFET HOT-CARRIER-INDUCED DEGRADATION UNDER DC STRESS: |
JESD28-A | Dec 2001 |
This document describes an accelerated test for measuring the hot-carrier-induced degradation of a single n-channel MOSFET using dc bias. The purpose of this document is to specify a minimum set of measurements so that valid comparisons can be made between different technologies, IC processes, and process variations in a simple, consistent and controlled way. The measurements specified should be viewed as a starting point in the characterization and benchmarking of the transistor manufacturing process. Committee(s): JC-14.2 Free download. Registration or login required. |
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A PROCEDURE FOR MEASURING P-CHANNEL MOSFET HOT-CARRIER-INDUCED DEGRADATION AT MAXIMUM GATE CURRENT UNDER DC STRESS: |
JESD60A | Sep 2004 |
This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that accurate comparisons can be made between different technologies. The measurements specified should be viewed as a starting pint in the characterization and benchmarking of the trasistor manufacturing process. Committee(s): JC-14.2 Free download. Registration or login required. |
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A PROCEDURE FOR MEASURING P-CHANNEL MOSFET NEGATIVE BIAS TEMPERATURE INSTABILITIESStatus: Rescinded September 2021 (JC-14.2-21-183) |
JESD90 | Nov 2004 |
This document hasbeen replaced by JESD241, September 2021. |
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ACCELERATED MOISTURE RESISTANCE - UNBIASED AUTOCLAVEStatus: Reaffirmed January 2021 |
JESD22-A102E | Jul 2015 |
This test allows the user to evaluate the moisture resistance of nonhermetic packaged solid state devices. The Unbiased Autoclave Test is performed to evaluate the moisture resistance integrity of non-hermetic packaged solid state devices using moisture condensing or moisture saturated steam environments. It is a highly accelerated test that employs conditions of pressure, humidity and temperature under condensing conditions to accelerate moisture penetration through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors passing through it. This test is used to identify failure mechanisms internal to the package and is destructive. Committee(s): JC-14.1 Free download. Registration or login required. |
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ACCELERATED MOISTURE RESISTANCE - UNBIASED HAST |
JESD22-A118B.01 | May 2021 |
The Unbiased HAST is performed for the purpose of evaluating the reliability of nonhermetic packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under noncondensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. Bias is not applied in this test to ensure the failure mechanisms potentially overshadowed by bias can be uncovered (e.g., galvanic corrosion). This test is used to identify failure mechanisms internal to the package and is destructive. Committee(s): JC-14.1 Free download. Registration or login required. |
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ADDENDUM No. 1 to JESD12 - TERMS AND DEFINITIONS FOR GATE ARRAYS AND CELL-BASED INTEGRATED CIRCUITS: |
JESD12-1B | Aug 1993 |
The purpose of this standard is to promote the uniform use of abbreviations, terms, and definitions throughout the semiconductor industry. It is a useful guide for users, manufactures, educators, technical writers, and others interested in the characterization, nomenclature, and classification of semicustom integrated circuits. Committee(s): JC-44 Free download. Registration or login required. |
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ADDENDUM No. 1 to JESD209-4, LOW POWER DOUBLE DATA RATE 4X (LPDDR4X) |
JESD209-4-1A | Feb 2021 |
This addendum defines LPDDR4X specifications that supersede the LPDDR4 Standard (JESD209-4) to enable low VDDQ operation of LPDDR4X devices to reduce power consumption. Item 1831.55A. Committee(s): JC-42.6 Available for purchase: $106.00 Add to Cart Paying JEDEC Members may login for free access. |
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Addendum No. 1 to JESD209A, LOW POWER DOUBLE DATA RATE (LPDDR) SDRAM, 1.2 V I/O. |
JESD209A-1 | Mar 2009 |
This document defines the Low Power Double Data Rate (LPDDR) SDRAM 1.2 V I/O, including AC and DC operating conditions, extended mode register settings, and I-V characteristics. The purpose of this Standard is to define the minimum set of requirements for JEDEC compliant 64 Mb through 2 Gb for x16 and x32 Low Power Double Data Rate SDRAM devices with 1.2 V I/O. System designs based on the required aspects of this specification will be supported by all LPDDR SDRAM vendors providing compliant devices. Committee(s): JC-42.6 Free download. Registration or login required. |
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ADDENDUM No. 1 to JESD24 - METHOD FOR MEASUREMENT OF POWER DEVICE TURN-OFF SWITCHING LOSS:Status: ReaffirmedApril 1999, October 2002 |
JESD24- 1 | Oct 1989 |
Describes the method of a typical oscilloscope waveform and the basic test circuit employed in the measurement of turn off loss for bipolar, IGBT and MOSFET power semiconductors. This method can be used as a standard for evaluating power semiconductor turn-off switching loss capability and defines standard terminology that should be referenced within the electronic industry. Committee(s): JC-25 Free download. Registration or login required. |
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Addendum No. 1 to JESD251 - OPTIONAL x4 QUAD I/O WITH DATA STROBE |
JESD251-1.01 | Sep 2021 |
This purpose of the addendum is to add an optional 4-bit bus width (x4) to JESD251, xSPI standard. The xSPI interface currently supports a x1 interface that acts as a bridge to legacy SPI functionality as well as the x8 interface intended to achieve dramatically higher bus performance than legacy SPI memory implementations. Item 1775.15. This is an editorial revision to JESD251-1, October 2018 Committee(s): JC-42.4 Free download. Registration or login required. |
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Addendum No. 1 to JESD28, N-CHANNEL MOSFET HOT CARRIER DATA ANALYSIS |
JESD28-1 | Sep 2001 |
This addendum provides data analysis examples useful in analyzing MOSFET n-channel hot-carrier-induced degradation data. This addendum to JESD28 (Hot carrier n-channel testing standard) suggests hot-carrier data analysis techniques. Committee(s): JC-14.2 Free download. Registration or login required. |
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ADDENDUM No. 1 to JESD35, GENERAL GUIDELINES FOR DESIGNING TEST STRUCTURES FOR THE WAFER-LEVEL TESTING OF THIN DIELECTRICSStatus: Rescinded |
JESD35-1 | Sep 1995 |
JESD35-1 was rescinded by the committee in June 2024 and has been superseded by JESD263. This addendum expands the usefulness of the Standard 35 (JESD35) by detailing the various sources of measurement error that could effect the test results obtained by the ramped tests described in JESD35. Each source of error is described and its implications on test structure design is noted. This addendum can be used as a guide when designing test structures for the qualification and characterization of thin oxide reliability, specifically, by implementing accelerated voltage or current ramp tests. Committee(s): JC-14.2 |
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Addendum No. 1 to JESD79-3 - 1.35 V DDR3L-800, DDR3L-1066, DDR3L-1333, DDR3L-1600, and DDR3L-1866This is a minor editorial revision, the differences between revisions can be found on page 17 of the document. |
JESD79-3-1A.01 | May 2013 |
The JESD79-3 document defines DDR3L SDRAM, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments with the exception of what is stated within this standard. The purpose of this standard is to define the DDR3L specifications that supersede the DDR3 specifications as defined in JESD79-3. The use of DDR3-800, DDR3-1066, DDR3-1333, DDR3-1600, and DDR3L-1866 titles in JESD79-3 are to be interpreted as DDR3L-800, DDR3L-1066, DDR3L-1333, DDR3L-1600, and DDR3L-1866 respectively, when applying towards DDR3L definition; unless specifically stated otherwise. Free download. Registration or login required. |
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Addendum No. 1 to JESD79-4, 3D STACKED DRAM |
JESD79-4-1B | Feb 2021 |
This document defines the 3DS DDR4 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a compliant 8 Gbit through 128 Gbit for x4, x8 3DS DDR4 SDRAM devices. This addendum was created based on the JESD79-4 DDR4 SDRAM specification. Each aspect of the changes for 3DS DDR4 SDRAM operation was considered. Item 1727.58G Committee(s): JC-42.3C Free download. Registration or login required. |
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ADDENDUM No. 1 to JESD8: INTERFACE STANDARD FOR LOW VOLTAGE TTL-COMPATIBLE (LVTTL) VLSI DIGITAL CIRCUITSStatus: Incorporatedinto JESD8-A, June 1994. JESD8-A was replaced by JESD8-B, September 1999. |
JESD8-1 | Jun 1994 |
Committee(s): JC-16 Free download. Registration or login required. |
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Addendum No. 1 to JESD96A - INTEROPERABILITY AND COMPLIANCE TECHNICAL REQUIREMENTS FOR JEDEC STANDARD JESD96A - RECOMMENDED PRACTICE FOR USE WITH IEEE 802.11N |
JESD96A-1 | Jan 2007 |
The normative information in this publication is intended to provide a technical design team to construct the interface on a FED and a BED such that they will operate correctly with each other (at the interface level), when designed to JESD96A. Committee(s): JC-61 Free download. Registration or login required. |
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ADDENDUM No. 1 to JESD99, TERMS, DEFINITIONS, AND LETTER SYMBOLS FOR ANALOG-TO-DIGITAL AND DIGITAL-TO-ANALOG CONVERTERSStatus: Incorporated into JESD99-A, May 2000 |
JESD99-1 | Jul 1989 |
This addendum has now been incorporated into JESD99. Committee(s): JC-10 Free download. Registration or login required. |
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ADDENDUM No. 10 to JESD24 - TEST METHOD FOR MEASUREMENT OF REVERSE RECOVERY TIME trr FOR POWER MOSFET DRAIN-SOURCE DIODES:Status: ReaffirmedOctober 2002 |
JESD24-10 | Aug 1994 |
Test method to measure the reverse recovery characteristics of the drain source diode of a power MOSFET. Committee(s): JC-25 Free download. Registration or login required. |
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ADDENDUM No. 11 to JESD24 - POWER MOSFET EQUIVALENT SERIES GATE RESISTANCE TEST METHOD:Status: ReaffirmedMarch 2001, October 2002 |
JESD24-11 | Aug 1996 |
Test method to measure the equivalent resistance of the gate to source of a power MOSFET. Committee(s): JC-25 Free download. Registration or login required. |
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ADDENDUM No. 11A.01 to JESD8 - 1.5 V +/- 0.1 V (NORMAL RANGE) AND 0.9 - 1.6 V (WIDE RANGE) POWER SUPPLY VOLTAGE AND INTERFACE STANDARD FOR NONTERMINATED DIGITAL INTEGRATED CIRCUITS: |
JESD8-11A.01 | Sep 2007 |
This new standard provides specifications that will be used by several companies in new 1.5 V products designed in 0.12-0.15 um CMOS technologies, and in components that interface with them. The specifications allow limited interoperability with products using the existing JEDEC HSTL specification (JESD8-6). This version is a minor editorial revision as noted in Annex A. Committee(s): JC-16 Free download. Registration or login required. |
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ADDENDUM No. 2 to JESD12 - STANDARD FOR CELL-BASED INTEGRATED CIRCUIT BENCHMARK SET: |
JESD12-2 | Feb 1986 |
The purpose of these benchmarks is to provide a common set of high level functions that serve as vehicles for comparing the performance of cell-based ICs implemented in any technology using any internal structure. JESD12-2 extends the gate array benchmark set (JESD12) to cell-based ICs. Committee(s): JC-44 Free download. Registration or login required. |
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ADDENDUM No. 2 to JESD24 - GATE CHARGE TEST METHODStatus: ReaffirmedOctober 2002 |
JESD24- 2 | Jan 1991 |
This addendum establishes a method for measuring power device gate charge. A gate charge test is performed by driving the device gate with a constant current and measuring the resulting gate voltage response. Constant gate current scales the gate voltage, a function of time, to a function of coulombs. The slope of the generated response reflects the active device capacitance as it varies during the switching transition . Gate charge measurements are useful for characterizing the large signal switching performance of power MOS and IGBT devices. Developed over a four year span by the JEDEC JC-25 Committee, the method defines a repeatable means of measuring the widely published Qgd charge values. Committee(s): JC-25 Free download. Registration or login required. |
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ADDENDUM No. 2 to JESD35 - TEST CRITERIA FOR THE WAFER-LEVEL TESTING OF THIN DIELECTRICS:Status: Rescinded |
JESD35-2 | Feb 1996 |
JESD35-2 was rescinded by the committee in June 2024 and has been superseded by JESD263. This addendum includes test criteria to supplement JESD35. JESD35 describes procedures developed for estimating the overall integrity of thin oxides in the MOS Integrated Circuit manufacturing industry. Two test procedures are included in JESD35: a Voltage-Ramp (V-Ramp) and a Current-Ramp (J-Ramp). As JESD35 became implemented into production facilities on a variety of test structures and oxide attributes, a need arose to clarify end point determination and point out some of the obstacles that could be overcome by careful characterization of the equipment and test structures. Committee(s): JC-14.2 |
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Addendum No. 2 to JESD79-3, 1.25 V DDR3U-800, DDR3U-1066, DDR3U-1333, and DDR3U-1600 |
JESD79-3-2 | Oct 2011 |
The purpose of this addendum is to define the DDR3U specifications that supersede the DDR3 specifications in the JESD79-3. The use of DDR3-800, DDR3-1066, DDR3-1333, and DDR3-1600 titles in JESD79-3 are to be interpreted as DDR3U-800, DDR3U-1066, DDR3U-1333, and DDR3U-1600, respectively, when applying towards DDR3U definition; unless specifically stated otherwise. Item 1769.01 Committee(s): JC-42.3 Free download. Registration or login required. |
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ADDENDUM No. 2 to JESD8 - STANDARD FOR OPERATING VOLTAGES AND INTERFACE LEVELS FOR LOW VOLTAGE EMITTER-COUPLED LOGIC (ECL) INTEGRATED CIRCUITS: |
JESD8-2 | Mar 1993 |
This Addendum No. 2 to JEDEC Standard No. 8 provides standard operating voltage and interface levels that can be used by designers and application engineers as they develop and introduce new products. Covers the ECL logic family designated 300K ECL. The 300K ECL family is Voltage and Temperature Compensated, with I/O interface levels compatible with the existing 100K ECL and 101K ECl families. Committee(s): JC-16 Free download. Registration or login required. |
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ADDENDUM No. 3 to JESD12 - CMOS GATE ARRAY MACROCELL STANDARD: |
JESD12-3 | Jun 1986 |
This standard defines a minimum set of macro cell standards for CMOS gate arrays. A total of 41 macro cell types are addressed, all of which are commonly used by gate array designers to implement Application Specific Integrated Circuits. Committee(s): JC-44 Free download. Registration or login required. |
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ADDENDUM No. 3 to JESD24 - THERMAL IMPEDANCE MEASUREMENTS FOR VERTICAL POWER MOSFETS (DELTA SOURCE-DRAIN VOLTAGE METHOD):Status: Reaffirmed |
JESD24- 3 | Nov 1990 |
The purpose of this test method is to measure the thermal impedance of the MOSFET under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity if the forward voltage drop of the source-drain is used as the junction temperature indicator. This method is particularly suitable to enhancement mode, power MOSFETs having relatively long thermal response times. This test method may be used to measure the thermal response of junction to a heating pulse, to ensure proper die mountdown to its case, or the dc thermal resistance, by the proper choice of the pulse duration and magnitude if the heating pulse. Committee(s): JC-25 Free download. Registration or login required. |
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Addendum No. 3 to JESD79-3, 3D STACKED SDRAM |
JESD79-3-3 | Dec 2013 |
This addendum to JESD79-3 defines the 3DS DDR3 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for compliant 8Gbit through 64Gbit x4 and x8 3DS DDR3 SDRAM devices. This document was created based on the E revision of the DDR standard (JESD79). Each aspect of the changes for 3DS DDR3 SDRAM operation was considered. Committee(s): JC-42.3 Free download. Registration or login required. |
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ADDENDUM No. 3A to JESD8 - GUNNING TRANSCEIVER LOGIC (GTL) LOW-LEVEL, HIGH-SPEED INTERFACE STANDARD FOR DIGITAL INTEGRATED CIRCUITS: |
JESD8-3A | May 2007 |
This Addendum No. 3 to JEDEC Standard No. 8 defines the dc input and output specifications for a low-level, high-speed interface for integrated devices. Patents(): 5,023,488 Committee(s): JC-16 Free download. Registration or login required. |
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ADDENDUM No. 4 to JESD12 - METHOD OF SPECIFICATION OF PERFORMANCE PARAMETERS FOR CMOS SEMICUSTOM INTEGRATED CIRCUITS: |
JESD12-4 | Apr 1987 |
This standard defines how to specify various performance parameters of semicustom ICs, including cell and interconnect propagation delays, input/output levels and capacitance, and power dissipation. Committee(s): JC-44 Free download. Registration or login required. |
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ADDENDUM No. 4 to JESD24 - THERMAL IMPEDANCE MEASUREMENTS FOR BIPOLAR TRANSISTORS (DELTA BASE-EMITTER VOLTAGE METHOD):Status: ReaffirmedOctober 2002 |
JESD24- 4 | Nov 1990 |
The purpose of this test method is to measure the thermal impedance of the Bipolar Transistor under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the base-emitter voltage is used as the junction temperature indicator. This test method is used to measure the thermal response of the junction to a heating pulse. Specifically, the test may be used to measure dc thermal resistance, and to ensure proper die mountdown to its case. This is accomplished through the appropriate choice of pulse duration and heating power magnitude. Committee(s): JC-25 Free download. Registration or login required. |
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ADDENDUM No. 4 to JESD8 - CENTER-TAP-TERMINATED (CTT) INTERFACE LOW-LEVEL, HIGH-SPEED INTERFACE STANDARD FOR DIGITAL INTEGRATED CIRCUITS: |
JESD8-4 | Nov 1993 |
This Addendum No. 4 to JEDEC Standard No. 8 defines the dc input and output specifications for a low-level, high-speed interface for integrated devices that can be a super-set of LVCMOS and LVTTL. Committee(s): JC-16 Free download. Registration or login required. |
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ADDENDUM No. 5 to JESD12 - DESIGN FOR TESTABILITY GUIDELINES: |
JESD12-5 | Aug 1988 |
This standard is intended to provide circuit designers with the information needed to develop complex integrated circuits that can be reliably and economically tested without compromising flexibility. Committee(s): JC-44 Free download. Registration or login required. |
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ADDENDUM No. 5 to JESD24 - SINGLE PULSE UNCLAMPED INDUCTIVE SWITCHING (UIS) AVALANCHE TEST METHOD:Status: Reaffirmedoctober 2002 |
JESD24- 5 | Aug 1990 |
This method describes a means for testing the ability of a power switching device to withstand avalanche breakdown. Committee(s): JC-25 Free download. Registration or login required. |
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ADDENDUM No. 5 to JESD8 - 2.5 V 0.2 V (NORMAL RANGE), AND 1.8 V TO 2.7 V (WIDE RANGE) POWER SUPPLY VOLTAGE AND INTERFACE STANDARD FOR NONTERMINATED DIGITAL INTEGRATED CIRCUIT |
JESD8-5A.01 | Sep 2007 |
This standard defines power supply voltage ranges, dc interface parameters for a high speed, low voltage family of non-terminated digital circuits driving/driven by parts of the same family. The specifications in this standard represent a minimum set of 'base line' set of interface specifications for CMOS-compatible circuits. Committee(s): JC-16 Free download. Registration or login required. |
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ADDENDUM No. 6 to JESD12 - INTERFACE STANDARD FOR SEMICUSTOM INTEGRATED CIRCUITS: |
JESD12-6 | Mar 1991 |
This standard defines logic interface levels for CMOS, TTL, ECL, and BiCC inputs and outputs. This standard is intended to provide an industry-wide set of specifications, for Application Specific Integrated Circuit (ASIC) signal inputs and outputs, both necessary and sufficient to define a circuits electrical interfacing with the external environment. JESD12-6 is intended to provide the ASIC manufacturer and user with a common set of signal interface levels. The standard defines interface levels for 5 volt operation. Committee(s): JC-44 Free download. Registration or login required. |
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ADDENDUM No. 6 to JESD24 - THERMAL IMPEDANCE MEASUREMENTS FOR INSULATED GATE BIPOLAR TRANSISTORS:Status: ReaffirmedOctober 2002 |
JESD24- 6 | Oct 1991 |
This standard describes in detail the method for thermal measurements of Insulated Gate Bipolar Transistors (IGBTs) and is suitable for use both in manufacturing and application of the devices. The method covers both thermal transient and thermal equilibrium measurements for manufacturing process control and device characterization purposes. Properly implemented, JESD24-6 provides a basis for obtaining realistic thermal parametric values that will benefit supplier's internal effectiveness and will be useful to the design and manufacturer of reliable IGBT circuits. Committee(s): JC-25 Free download. Registration or login required. |
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ADDENDUM No. 6 to JESD8 - HIGH SPEED TRANSCEIVER LOGIC (HSTL)- A 1.5 V OUTPUT BUFFER SUPPLY VOLTAGE BASED INTERFACE STANDARD FOR DIGITAL INTEGRATED CIRCUITS: |
JESD8-6 | Aug 1995 |
This standard is a 1.5 volt high performance CMOS-based interface document suitable for high I/O count CMOS and BiCMOS devices operating at frequencies in excess of 200 Mhz. Committee(s): JC-16 Free download. Registration or login required. |
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ADDENDUM No. 7 to JESD24 - COMMUTATING DIODE SAFE OPERATING AREA TEST PROCEDURE FOR MEASURING dv/dt DURING REVERSE RECOVERY OF POWER TRANSISTORS:Status: ReaffirmedOctober 2002 |
JESD24- 7 | Aug 1982 |
Defines methods for verifying the diode recovery stress capability of power transistors. Committee(s): JC-25 Free download. Registration or login required. |
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ADDENDUM No. 7 to JESD8 - 1.8 V + -0.15 V (NORMAL RANGE), AND 1.2 V - 1.95 V (WIDE RANGE) POWER SUPPLY VOLTAGE AND INTERFACE STANDARD FOR NONTERMINATED DIGITAL INTEGRATED CIRCUIT: |
JESD8-7A | Jun 2006 |
This standard continues the voltage specification migration to the next level beyond the 2.5 V specification already established. Since this migration is driven by both process changes and performance/power, more entries can be expected in supporting required voltage levels. The rapidity of this evolution is expecting to increase because of the same feature sizes expected. Committee(s): JC-16 Free download. Registration or login required. |
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ADDENDUM No. 8 to JESD24 - METHOD FOR REPETITIVE INDUCTIVE LOAD AVALANCHE SWITCHING:Status: ReaffirmedOctober 2002 |
JESD24- 8 | Aug 1992 |
Determines the repetitive inductive avalanche switching capability of power switching transistors. Committee(s): JC-25 Free download. Registration or login required. |
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ADDENDUM No. 8 to JESD8 - STUB SERIES TERMINATED LOGIC FOR 3.3 VOLTS (SSTL_3) A 3.3 V VOLTAGE BASED INTERFACE STANDARD FOR DIGITAL INTEGRATED CIRCUITS |
JESD8-8 | Aug 1996 |
This standard is a result of a major effort by the JC-16 Committee to develop a high performance CMOS-based interface suitable for high speed main memory applications in excess of 125 MHz. Committee(s): JC-16 Free download. Registration or login required. |
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ADDENDUM No. 9 to JESD24 - SHORT CIRCUIT WITHSTAND TIME TEST METHOD:Status: ReaffirmedOctober 2002 |
JESD24- 9 | Aug 1992 |
Test method to determine how long a device can survive a short circuit condition with a given drive level. Committee(s): JC-25 Free download. Registration or login required. |
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ADDENDUM No. 9B to JESD8 - STUB SERIES TERMINATED LOGIC FOR 2.5 VOLTS (SSTL_2): Includes Errata and Corrected Page 7 as of October 18, 2002. |
JESD8-9B | May 2002 |
This standard defines the input, output specifications and ac test conditions for devices that are designed to operate in the SSTL_2 logic switching range, nominally 0 V to 2.5 V. The standard may be applied to ICs operating with separate VDD and VDDQ supply voltages. This standard has been developed particularly with the objective of providing a relatively simple upgrade path from MOS push-pull interface designs. The standard is particularly intended to improve operation in situations where busses must be isolated from relatively large stubs. Committee(s): JC-16 Free download. Registration or login required. |
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ALPHA RADIATION MEASUREMENT IN ELECTRONIC MATERIALS |
JESD221 | May 2011 |
This standard applies generally to gas proportional instruments and the use thereof in measuring materials with an alpha emissivity of less than 10 a·khr-1·cm-2. The primary focus will be on materials used in semiconductor fabrication. The purpose of this document is to specify the recommended method for measuring alpha emissivity in materials utilized in the manufacturing of semiconductors. The method specifically applies to gas proportional instruments and designates recommended instrument settings. In addition, the method discusses operation of ionization counters. The document also recommends methods for determining sample size and for evaluating instrument background accurately. Free download. Registration or login required. |
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ANNUAL UPDATING SERVICE: |
JESD21-C AUS | Jan 2004 |
The JEDEC Office has generated a mailing list for those who wish to subscribe to updates of this publication. A payment is required for subscription to this updating service. Committee(s): JC-42 |
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APPLICATION SPECIFIC QUALIFICATION USING KNOWLEDGE BASED TEST METHODOLOGYStatus: Reaffirmed January 2021 |
JESD94B | Oct 2015 |
The method described in this document applies to all application specific reliability testing for solid state components with known failure mechanisms where the test duration and conditions vary based on application variables. This document does not cover reliability tests that are characterization based or essentially go / no-go type tests, for example, ESD, latch-up, or electrical over stress. Also, it does not attempt to cover every failure mechanism or test environment, but does provide a methodology that can be extended to other failure mechanisms and test environments. Committee(s): JC-14.3 Free download. Registration or login required. |
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ASSESSMENT OF AVERAGE OUTGOING QUALITY LEVELS IN PARTS PER MILLION (PPM) |
JESD16B | Nov 2017 |
This standard was revised to clarify assumptions necessary to estimate AOQ, revise the minimum sample size algorithm, address small sample size concerns, and provide methods for combining groups for AOQ estimation. Derivation of any new methods for combing groups for AOQ estimation. Derivation of any new methods introduced into this document have been provided in annexes. A statistical method is based on confidence interval statistics. A procedure was established for reporting AOQ when the minimum sample size criterion is not met. Not all sections of EIA-554 are appropriate for use by device manufacturers therefore JEDEC wishes to continue using JESD16. In December 2008 the formulating committee approved to remove EIA-554 (July 1996, Reaffirmed September 2002) from the JEDEC website. To obtain a copy of EIA-554 please contact GEIA at http://www.geia.org/ Committee(s): JC-13 Free download. Registration or login required. |
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Automotive Solid State Drive (SSD) Device StandardRelease Number: 1.1 |
JESD312 | Jan 2025 |
This standard defines the specifications of interface parameters, signaling protocols, environmental requirements, packaging, and other features for a solid state drive (SSD) targeted primarily at automotive applications. Free download. Registration or login required. |