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This document describes a test method only; acceptance criteria and qualification requirements are not defined. This test method applies to solder ball pull force/energy testing prior to end-use attachment. Solder balls are pulled individually using mechanical jaws; force, fracture energy and failure mode data are collected and analyzed. Other specialized solder ball pull methods using a heated thermode, gang pulling of multiple solder joints, etc., are outside the scope of this document. Both low and high speed testing are covered by this document. This is a minor editorial revision to JESD22-A115A.

Committee(s): JC-14, JC-14.1

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This document provides a comprehensive definition of the UFS security requirements for implementation of IEEE 1667 and TCG Opal security functionality. It also provides design guidelines and defines a tool box of macro functions and algorithms intended to reduce design-in overhead.

Committee(s): JC-64.1

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This test method is used to determine whether solid state devices can withstand the effect of the temperature shock to which they will be subjected during soldering of their leads in a solderwave process and/or solder fountain (rework/replacement) process. The heat is conducted through the leads into the device package from solder heat at the reverse side of the board.

Committee(s): JC-14.1

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This test method provides various tests for determining the integrity lead/package interface and the lead itself when the lead(s) are bent due to faulty board assembly followed by rework of the part for reassembly. For hermetic packages it is recommend that this test be followed by hermeticity tests in accordance with Test Method A109 to determine if there are any adverse effects from the stresses applied to the seals as well as to the leads. These tests, including each of its test conditions, is considered destructive and is only recommended for qualification testing. This test is applicable to all through-hole devices and surface-mount devices requiring lead forming by the user.

Committee(s): JC-14, JC-14.1

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This method establishes requirements for application of Statistical Reliability Monitoring 'SRM' technology to monitor and improve the reliability of electronic components and subassemblies. The standard also describes the condition under with a monitor may be replaced or eliminated. Formerly known as EIA-659, that superseded JESD29-A (July 1996). Became JESD659 after revision, September 1999.

Committee(s): JC-14, JC-14.3

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This fully revised test provides a means for determining the strength of gold and copper ball bonds to a die or package bonding surface, and may be performed on pre-encapsulation or post-encapsulation parts. Pictures have been added to enhance the fail mode diagrams. The wire bond shear test is destructive. The test method can also be used to shear aluminum and copper wedge bonds to a die or package bonding surface. It is appropriate for use in process development, process control and/or quality assurance.

Committee(s): JC-14, JC-14.1

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JESD224A is valid only for UFS 2.1 and should not be referenced for other versions of the UFS standard.

The primary objective of this test standard is to specify the test cases for UFS device protocol conformance testing. This test standard provides test cases for checking the functions defined in the following target standard: JESD220. Universal Flash Storage (UFS) Standard version 1.1A. MIPI M-PHY and MIPI UniPro test cases are not in the scope of this document. Item 400.36

Committee(s): JC-64.5

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This document describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method may be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.

Committee(s): JC-14.2

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This test method defines requirements and procedures for ground simulation and single event effects (SEE) and implementation of the method in testing integrated circuits. This standard is valid when using a cyclotron or Van de Graaff accelerator. Microcircuits under test must be delidded. The ions used at the facilities have an atomic number Z > 2. It does not apply to SEE testing that uses protons, neutrons, or other lighter particles. This standard is designed to eliminate any misunderstanding between users of the method and test facilities, to minimize delays, and to promote standardization of testing and test data.

Committee(s): JC-13.4

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This document has been superseded by JESD220E, January 2020, however is available for reference only.

Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office.

Committee(s): JC-64.1

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This Test Method covers the minimum requirements that should be in effect for the evaluation and acceptance of polymeric materials for use in industrial, military, space, and other special-condition products which may require capabilities beyond standard commercial microelectronics applications. It is not the intent of this Publication to specify a material, but to evaluate the material to assure that the quality and reliability of the microelectronic devices are not compromised. This document replaces JEP105, JEP107 and JEP112.

Committee(s): JC-13.5

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This standard defines the dc and ac input levels, output levels, and input overshoot and undershoot specifications for the 1.8 V High-speed LVCMOS (HS_LVCMOS) interface. The non-terminated interface has a switching range that is nominally expected to be 0 V to 1.8 V.

Committee(s): JC-16

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This standard addresses any Customer-initiated device problem analysis/corrective action request and Supplier/Authorized Distributor-identified device nonconformance to specification which may impact the Customer. This standard establishes a common set of Customer, Authorized Distributor and Supplier expectations and requirements that will help to facilitate successful problem analysis and corrective action of device problems, including administrative quality problems, which may affect the Customer. Formerly known as EIA-671 (November 1996). Became JESD671-A after revision, December 1999.

Committee(s): JC-14.4

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This stress test is intended to determine the ability of an EEPROM integrated circuit or an integrated circuit with an EEPROM module (such as a microprocessor) to sustain repeated data changes without failure (program/erase endurance) and to retain data for the expected life of the EEPROM (data retention). This Standard specifies the procedural requirements for performing valid endurance and retention tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or may be developed using knowledge-based methods as in JESD94.

Committee(s): JC-14, JC-14.1

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This document has been replaced by JESD209-5A.  Members of JC-42.6 may access a reference copy on the restricted members' website.

Committee(s): JC-42.6

This standard defines power supply voltage range, dc interface, switching parameter and overshoot/undershoot for high speed low voltage swing terminated NMOS driver family digital circuits. The specifications in this standard represent a minimum set of interface specifications for low voltage terminated circuits. Item 159.03

Committee(s): JC-16

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This standard defines standard specifications for features and functionality, DC and AC interface parameters and test loading for definition of the DDR4 data buffer for driving DQ and DQS nets on DDR4 LRDIMM applications. Any TBDs as of this document, are under discussion by formulating committee. Item 314.11D

*If you downloaded this file between 8/7/2019 and 8/14/2019, please download again, the publication date on the document was incorrected and has been fixed.

Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office.

Committee(s): JC-40.4

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This document has been superseded by JESD220F, August 2022, however is available for reference only.

Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office.

Committee(s): JC-64.1

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The power and temperature cycling test is performed to determine the ability of a device to withstand alternate exposures at high and low temperature extremes and simultaneously the operating biases are periodically applied and removed. It is intended to simulate worst case conditions encountered in application environments. The power and temperature cycling test is considered destructive and is only intended for device qualification. This test method applies to semiconductor devices that are subjected to temperature excursions and required to power on and off during all temperatures.

Committee(s): JC-14, JC-14.1

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This Test Method establishes an industry standard preconditioning flow for nonhermetic solid state SMDs (surface mount devices) that is representative of a typical industry multiple solder reflow operation. These SMDs should be subjected to the appropriate preconditioning sequence of this document by the semiconductor manufacturer prior to being submitted to specific in-house reliability testing (qualification and reliability monitoring) to evaluate long term reliability (which might be impacted by solder reflow).

Committee(s): JC-14.1

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The purpose of this standard is definition of a UFS Universal Flash Storage electrical interface and a UFS memory device. This standard defines a unique UFS feature set and includes the feature set of eMMC standard as a subset. This standard replaces JESD220C, UFS 2.1, and introduces a feature called WriteBooster.  Item 138.88.

Committee(s): JC-64.1

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Definition for all DDRx component documents to reference. This is generic to any DDRx
technology. Item 1842.34

Committee(s): JC-42.3C

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This standard specifies the characteristics of the UFS card electrical interface and the memory device. This document defines the added/modified features in UFS card compared to embedded UFS device. For other common features JESD220, UFS, will be referenced.

Patents(): Samsung: US D727910, US D736212, US D736215, US D736214, US D736213, US 29/546125, US 29/546150

Committee(s): JC-64.1

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This standard identifies the best commercial practices for mitigating and/or avoiding counterfeit products by all manufacturers of electronic parts including, but not limited to original component manufacturers (OCMs), authorized aftermarket manufacturers, and other companies that manufacture electronic parts under their own logo, name, or trademark. The types of product this standard applies to is limited to monolithic microcircuits, hybrid microcircuits and discrete semiconductor products.

Committee(s): JC-13

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This document defines the 3DS DDR4 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a compliant 8 Gbit through 128 Gbit for x4, x8 3DS DDR4 SDRAM devices. This addendum was created based on the JESD79-4 DDR4 SDRAM specification. Each aspect of the changes for 3DS DDR4 SDRAM operation was considered. Item 1727.58G

Committee(s): JC-42.3C

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The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet (Note this version is the latest version for use with JESD235D). Committee item 1797.99L.

Committee(s): JC-42.3C

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This standard is intended for use by SoC, ASIC, ASSP, and FPGA developers or vendors interested in incorporating a signaling protocol for hardware resetting the Serial Flash device. In is also intended for use by peripheral developers or vendors interested in providing Serial Flash devices compliant with the standard. This standard defines a signaling protocol that allows the host to reset the slaved Serial Flash device without a dedicated hardware reset pin. Item 1775.06.

Committee(s): JC-42.4

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The Unbiased HAST is performed for the purpose of evaluating the reliability of nonhermetic packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under noncondensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. Bias is not applied in this test to ensure the failure mechanisms potentially overshadowed by bias can be uncovered (e.g., galvanic corrosion). This test is used to identify failure mechanisms internal to the package and is destructive.

Committee(s): JC-14.1

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This document defines the DDR4 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this Standard is to define the minimum set of requirements for JEDEC compliant 2 Gb through 16 Gb for x4, x8, and x16 DDR4 SDRAM devices. This standard was created based on the DDR3 standard (JESD79-3) and some aspects of the DDR and DDR2 standards (JESD79, JESD79-2). Committee Item 1716.78H

Committee(s): JC-42.3C

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