Global Standards for the Microelectronics Industry
Standards & Documents Search
| Title | Document # |
Date |
|---|---|---|
REPLAY PROTECTED MONOTONIC COUNTER (RPMC) FOR SERIAL FLASH DEVICES |
JESD260 | Apr 2021 |
This document provides the requirements for an additional block called as Replay Protection Monotonic Counter. (RPMC) Replay Protection provides a building block towards providing additional security. This block requires modifications in both a Serial Flash device and Serial Flash Controller. The standard defines new commands for Replay Protected Monotonic Counter operations. A device that supports RPMC can support these new commands as defined in this standard. Committee(s): JC-42.4 Free download. Registration or login required. |
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SERIAL FLASH RESET SIGNALING PROTOCOL |
JESD252.01 | Apr 2021 |
This standard is intended for use by SoC, ASIC, ASSP, and FPGA developers or vendors interested in incorporating a signaling protocol for hardware resetting the Serial Flash device. In is also intended for use by peripheral developers or vendors interested in providing Serial Flash devices compliant with the standard. This standard defines a signaling protocol that allows the host to reset the slaved Serial Flash device without a dedicated hardware reset pin. Item 1775.06. Committee(s): JC-42.4 Free download. Registration or login required. |
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FLIP CHIP TENSILE PULL |
JESD22-B109C | Mar 2021 |
The Flip Chip Tensile Pull Test Method is performed to determine the fracture mode and strength of the solder bump interconnection between the flip chip die and the substrate. It should be used to assess the consistency of the chip join process. This test method is a destructive test. Committee(s): JC-14.1 Free download. Registration or login required. |
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HIGH BANDWIDTH MEMORY (HBM) DRAM |
JESD235D | Mar 2021 |
The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet (Note this version is the latest version for use with JESD235D). Committee item 1797.99L. Committee(s): JC-42.3C Available for purchase: $247.00 Add to Cart Paying JEDEC Members may login for free access. |
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ADDENDUM No. 1 to JESD209-4, LOW POWER DOUBLE DATA RATE 4X (LPDDR4X) |
JESD209-4-1A | Feb 2021 |
This addendum defines LPDDR4X specifications that supersede the LPDDR4 Standard (JESD209-4) to enable low VDDQ operation of LPDDR4X devices to reduce power consumption. Item 1831.55A. Committee(s): JC-42.6 Available for purchase: $106.00 Add to Cart Paying JEDEC Members may login for free access. |
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