Global Standards for the Microelectronics Industry
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TERMS, DEFINITIONS AND UNITS GLOSSARY FOR LED THERMAL TESTING |
JESD51-53A | Oct 2022 |
This document provides a unified collection of the commonly used terms and definitions in the area of LED thermal measurements. The terms and definitions provided herein extend beyond those used in the JESD51 family of documents, especially in JESD51-13, in order to include other often used terms and definitions in the area of light output measurements of LEDs. Definitions, symbols and notations regarding light output measurements used here are consistent with those defined in JESD77C.01 and with those defined by CIE (International Commission on Illumination), especially in the International Lighting Vocabulary, CIE S 017/E:2011 ILV and in the CIE 127-2007 document as well as in some other relevant standards of other standardization bodies from the solid-state lighting industry, e.g., ANSI/IESNA RP 16-05. Committee(s): JC-15 Free download. Registration or login required. |
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PMIC5100 POWER MANAGEMENT IC STANDARD, Rev 1.03 |
JESD301-2 | Oct 2022 |
This standard defines the specification of interface parameters, signaling protocols, and features for PMIC devices used for memory module applications. The designation PMIC5100 refers to the device specified by this document. The purpose is to provide a standard for the PMIC5100 device for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. Item 336.01C Committee(s): JC-40.1 Free download. Registration or login required. |
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TEST METHOD FOR ESTABLISHING X-RAY TOTAL DOSE LIMIT FOR DRAM DEVICES |
JESD22-B130 | Sep 2022 |
This test method is offered as a standardized procedure to determine the total dose limit of DRAMs by measuring its refresh time tRef degradation after the device is irradiated with an X-Ray dose. This test method is applicable to any packaged device that contains a DRAM die or any embedded DRAM structure. Some indirect test methods such as wafer level characterization of total dose induced changes in leakage of access transistors are not described in this standard but are permissible as long as a good correlation is established. Committee(s): JC-14.1 Free download. Registration or login required. |
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POD15 - 1.5 V PSEUDO OPEN DRAIN I/O |
JESD8-20A.01 | Aug 2022 |
Terminology Update. This standard defines the dc and ac single-ended (data) and differential (clock) operating conditions, I/O impedance, and the termination and calibration scheme for 1.5 V Pseudo Open Drain I/Os. The 1.5 V Pseudo Open Drain interface, also known as POD15, is primarily used to communicate with GDDR4 and GDDR5 SGRAM devices. Item 135.01 Committee(s): JC-16 Free download. Registration or login required. |
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Universal Flash Storage (UFS) File Based Optimizations (FBO) Extension, Version 1.0Status: Superseded |
JESD231 | Aug 2022 |
JESD231 was superseded by the renumbered JESD220-4 Version 1.01. Committee(s): JC-64.1 |
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Universal Flash Storage Host Controller Interface (UFSHCI), Version 4.0Status: Superseded December 2024 by JESD223F |
JESD223E | Aug 2022 |
NOTE: This document has been superseded by JESD223F published in December 2024, but remains available for reference purposes. Committee(s): JC-64.1 Available for purchase: $163.00 Add to Cart Paying JEDEC Members may login for free access. |
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UNIVERSAL FLASH STORAGE, Version 4.0Status: Superseded December 2024 by JESD220G |
JESD220F | Aug 2022 |
NOTE: This document has been superseded by JESD220G published in December 2024, but remains available for reference purposes.
Committee(s): JC-64.1 Available for purchase: $369.00 Add to Cart Paying JEDEC Members may login for free access. |
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DDR5 UDIMM Raw Card Annex ARelease Number: Version 1.0 |
JESD308-U0-RCA | Jul 2022 |
This annex JESD308-U0-RCA, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Raw Card A Annex defines the design detail of x8, 1 Package Rank DDR5 UDIMM. The common feature of DDR5 UDIMM such as the connector pinout can be found in the JESD308, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Common Standard. Item 2265.13A Committee(s): JC-45.3 Free download. Registration or login required. |
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POD125 - 1.25 V PSEUDO OPEN DRAIN I/O |
JESD8-30A.01 | Jun 2022 |
Editorial Terminology Update. This standard defines the DC and AC single-ended (data) and differential (clock) operating conditions, I/O impedances, and the termination and calibration scheme for 1.25 V Pseudo Open Drain I/Os. The 1.25 V Pseudo Open Drain interface, also known as POD125, is primarily used to communicate with GDDR6 SGRAM devices. Committee(s): JC-16 Free download. Registration or login required. |
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POD135 - 1.35 V PSEUDO OPEN DRAIN I/O |
JESD8-21C.01 | Jun 2022 |
Editorial, Terminology Update. This standard defines the dc and ac single-ended (data) and differential (clock) operating conditions, I/O impedance's, and the termination and calibration scheme for 1.35 V Pseudo Open Drain I/Os. The 1.35 V Pseudo Open Drain interface, also known as POD135, is primarily used to communicate with GDDR5 or GDDR5M SGRAM devices. Item 146.01B Committee(s): JC-16 Free download. Registration or login required. |
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SOLID-STATE DRIVE (SSD) ENDURANCE WORKLOADS |
JESD219A.01 | Jun 2022 |
Terminology update, see Annex. This standard defines workloads for the endurance rating and endurance verification of SSD application classes. These workloads shall be used in conjunction with the Solid State Drive (SSD) Requirements and Endurance Test Method standard, JESD218. Also see JESD219A_MT and JESD219A_TT for the supporting trace files. Free download. Registration or login required. |
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EXPANDED SERIAL PERIPHERAL INTERFACE (xSPI) FOR NONVOLATILE MEMORY DEVICES |
JESD251C | May 2022 |
This standard specifies the eXpanded Serial Peripheral Interface (xSPI) for Non Volatile Memory Devices, which provides high data throughput, low signal count, and limited backward compatibility with legacy Serial Peripheral Interface (SPI) devices. It is primarily for use in computing, automotive, Internet Of Things (IOT), embedded systems and mobile systems, between host processing and peripheral devices. The xSPI electrical interface can deliver up to 400 MBytes per second raw data throughput. Item 1775.74. Committee(s): JC-42.4 Free download. Registration or login required. |
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EXTERNAL VISUAL |
JESD22-B101D | Apr 2022 |
External visual inspection is an examination of the external surfaces, construction, marking, and workmanship of a finished package or component. External visual is a noninvasive and nondestructive test. It is functional for qualification, quality monitoring, and lot acceptance. Committee(s): JC-14.1 Free download. Registration or login required. |
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DDR5 RDIMM Standard, Annex FRelease Number: Version 1.0 |
JESD305-R4-RCF | Apr 2022 |
This standard, JESD305-R4-RCF, DDR5 Registered Dual Inline Memory Module with 4-bit ECC (EC4 RDIMM) Raw Card F Annex, defines the design detail of x4, 1 Package Rank DDR5 RDIMM with 4-bit ECC. The common feature of DDR5 RDIMM, such as the connector pinout, can be found in the JESD305, DDR5 Load Reduced (LRDIMM) and Registered Dual Inline Memory Module (RDIMM) Common Standard. Item 2273.10. Committee(s): JC-45.1 Free download. Registration or login required. |
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BYTE ADDRESSABLE ENERGY BACKED INTERFACE |
JESD245E | Apr 2022 |
This standard specifies the host and device interface for a DDR4 NVDIMM-N, which is a DIMM that achieves non-volatility by copying SDRAM contents into non-volatile memory (NVM) when host power is lost using an Energy Source managed by either the module or the host. This standard is used in conjunction with JESD248. Item 2233.54G Committee(s): JC-45.6 Free download. Registration or login required. |
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DDR5 RDIMM Standard Annex BRelease Number: Version 1.0 |
JESD305-R4-RCB | Apr 2022 |
This standard, JESD305-R4-RCB, DDR5 Registered Dual Inline Memory Module with 4-bit ECC (EC4 RDIMM) Raw Card B Annex, defines the design detail of x4, 2 Package Ranks DDR5 RDIMM with 4-bit ECC. The common feature of DDR5 RDIMM, such as the connector pinout, can be found in the JESD305, DDR5 Load Reduced (LRDIMM) and Registered Dual Inline Memory Module (RDIMM) Common Standard. Item 2273.14. Committee(s): JC-45.1 Free download. Registration or login required. |
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METHOD FOR DEVELOPING ACCELERATION MODELS FOR ELECTRONIC DEVICE FAILURE MECHANISMS |
JESD91B | Mar 2022 |
The method described in this document applies to all reliability mechanisms associated with electronic devices. The purpose of this standard is to provide a reference for developing acceleration models for defect-related and wear-out mechanisms in electronic devices. Committee(s): JC-14.3 Free download. Registration or login required. |
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TEST METHOD FOR THE MEASUREMENT OF MOISTURE DIFFUSIVITY AND WATER SOLUBILITY IN ORGANIC MATERIALS USED IN ELECTRONIC DEVICES |
JESD22-A120C | Jan 2022 |
This standard details the procedures for the measurement of characteristic bulk material properties of moisture diffusivity and water solubility in organic materials used in the packaging of electronic devices. These two material properties are important parameters for the effective reliability performance of plastic packaged surface mount devices after exposure to moisture and subjected to high temperature solder reflow. Committee(s): JC-14.1 Free download. Registration or login required. |
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DDR5 Buffer Definition (DDR5DB01) - Rev. 1.1 |
JESD82-521 | Dec 2021 |
This standard defines standard specifications for features and functionality, DC & AC interface parameters and test loading for definition of the DDR5 data buffer for driving DQ and DQS nets on DDR5 LRDIMM applications. The purpose is to provide a standard for the DDR5DB01 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. Item 323.98K Committee(s): JC-40.4 Free download. Registration or login required. |
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Backup Energy Module Standard for NVDIMM Memory Devices (BEM) |
JESD315 | Dec 2021 |
This standard defines the functional requirements of Backup Energy Module (BEM), henceforth referred to as BEM in this standard. This module shall be used to provide backup power to the Industry Defined Storage Array Controller Cards and NVDIMM-n as applicable. All standards are applicable under all operating conditions unless otherwise stated. Item 2279.03 Committee(s): JC-45 Free download. Registration or login required. |
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SEMICONDUCTOR WAFER AND DIE BACKSIDE EXTERNAL VISUAL INSPECTION |
JESD22-B118A | Nov 2021 |
This inspection method is for product semiconductor wafers and dice prior to assembly. This test method defines the requirements to execute a standardized external visual inspection and is a non-invasive and nondestructive examination that can be used for qualification, quality monitoring, and lot acceptance. Committee(s): JC-14.1 Free download. Registration or login required. |
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DEFINITION OF THE SSTU32866 1.8 V CONFIGURABLE REGISTERED BUFFER WITH PARITY FOR DDR2 RDIMM APPLICATIONS |
JESD82-10A.01 | Oct 2021 |
This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTU32866 registered buffer with parity test for DDR2 RDIMM applications. The purpose is to provide a standard for the SSTU32866 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. This is a minor editorial revision as shown in Annex A of the document. Free download. Registration or login required. |
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DEFINITION OF THE SSTUA32S865 AND SSTUA32D865 28-BIT 1:2 REGISTERED BUFFER WITH PARITY FOR DDR2 RDIMM APPLICATIONS |
JESD82-19A.01 | Oct 2021 |
This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUA32S865 and SSTUA32D865 registered buffer with parity for 2 rank by 4 or similar high-density DDR2 RDIMM applications. This is a minor editor revision as shown in Annex A of the document. Committee(s): JC-40 Free download. Registration or login required. |
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DEFINITION OF THE SSTUB32868 1.8 V CONFIGURABLE REGISTERED BUFFER WITH PARITY FOR DDR2 RDIMM APPLICATIONS |
JESD82-14A.01 | Oct 2021 |
This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUB32868 registered buffer with parity test for DDR2 RDIMM applications. SSTU32S2868 denotes a single-die implementation and SSTU32D868 denotes a dual-die implementation. This is a minor editorial revision as shown in Annex A of the document. Committee(s): JC-40 Free download. Registration or login required. |
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DEFINITION OF THE SSTUA32866 1.8 V CONFIGURABLE REGISTERED BUFFER WITH PARITY TEST FOR DDR2 RDIMM APPLICATIONS |
JESD82-16A.01 | Oct 2021 |
This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUA32866 registered buffer with parity test for DDR2 RDIMM applications. The purpose is to provide a standard for the SSTUA32866 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. This is a minor editorial revision as shown in Annex A of the document. Free download. Registration or login required. |
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STANDARD FOR DEFINITION OF THE SSTV16859 2.5 V, 13-BIT TO 26-BIT SSTL_2 REGISTERED BUFFER FOR STACKED DDR DIMM APPLICATIONS: |
JESD82-4B.01 | Oct 2021 |
This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTV16859 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM applications. The purpose is to provide a standard for the SSTV16859 logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. This is a minor editorial revision, shown in Annex A of the document. Committee(s): JC-40 Free download. Registration or login required. |
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DEFINITION OF SSTU32865 REGISTERED BUFFER WITH PARITY FOR 2R x 4 DDR2 RDIMM APPLICATIONS |
JESD82-9B.01 | Oct 2021 |
This standard provides the functional definition, ball-out configuration and package outline, signal definitions and input/output characteristics for a 28-bit 1:2 registered driver with parity suitable for use on DDR2 RDIMMs. The SSTU32865 integrates the functional equivalent of two SSTU32864 devices (as defined in JESD82-7) into a single device, thereby easing layout and board design constraints especially on high density RDIMMs such as dual rank, by four configurations. Moreover, the optional use of a parity function is provided for, permitting detection and reporting of parity errors across its 22 data inputs. JESD82-9 specifies a 160-pin Thin-profile, fine-pitch ball-grid array (TFBGA) package. This is a minor editorial revision as shown in Annex A of the document. Free download. Registration or login required. |
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TEST METHOD FOR BEAM ACCELERATED SOFT ERROR RATE |
JESD89-3B | Sep 2021 |
This test is used to determine the terrestrial cosmic ray Soft Error Rate (SER) sensitivity of solid state volatile memory arrays and bistable logic elements (e.g., flip-flops) by measuring the error rate while the device is irradiated in a neutron or proton beam of known flux. The results of this accelerated test can be used to estimate the terrestrial cosmic ray induced SER for a given terrestrial cosmic ray radiation environment. This test cannot be used to project alpha-particle induced SER. Committee(s): JC-14.1 Free download. Registration or login required. |
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MEASUREMENT AND REPORTING OF ALPHA PARTICLE AND TERRESTRIAL COSMIC RAY INDUCED SOFT ERRORS IN SEMICONDUCTOR DEVICES |
JESD89B | Sep 2021 |
This specification defines the standard requirements and procedures for terrestrial soft-error-rate (SER) testing of integrated circuits and reporting of results. Both real-time (unaccelerated) and accelerated testing procedures are described. At terrestrial, Earth-based altitudes, the predominant sources of radiation include both cosmic-ray radiation and alpha-particle radiation from radioisotopic impurities in the package and chip materials. An overall assessment of a deviceís SER is complete, only when an unaccelerated test is done, or accelerated SER data for the alpha-particle component and the cosmic-radiation component has been obtained. Free download. Registration or login required. |
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Addendum No. 1 to JESD251 - OPTIONAL x4 QUAD I/O WITH DATA STROBE |
JESD251-1.01 | Sep 2021 |
This purpose of the addendum is to add an optional 4-bit bus width (x4) to JESD251, xSPI standard. The xSPI interface currently supports a x1 interface that acts as a bridge to legacy SPI functionality as well as the x8 interface intended to achieve dramatically higher bus performance than legacy SPI memory implementations. Item 1775.15. This is an editorial revision to JESD251-1, October 2018 Committee(s): JC-42.4 Free download. Registration or login required. |
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DDR5 REGISTERING CLOCK DRIVER DEFINITION (DDR5RCD01) |
JESD82-511 | Aug 2021 |
This document defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the DDR5 Registering Clock Driver (RCD) with parity for driving address and control nets on DDR5 RDIMM and LRDIMM applications. The DDR5RCD01 Device ID is DID = 0x0051. Committee(s): JC-40.4 Free download. Registration or login required. |
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GENERAL REQUIREMENTS FOR DISTRIBUTORS OF COMMERCIAL AND MILITARY SEMICONDUCTOR DEVICES |
JESD31F | Aug 2021 |
This standard identifies the general requirements for Distributors that supply Commercial and Military products. This standard applies to all discrete semiconductors, integrated circuits and Hybrids, whether packaged or in wafer/die form, manufactured by all Manufacturers. The requirements defined within this document are only applicable to products for which ownership remains with the Distributor or Manufacturer. Free download. Registration or login required. |
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ENCLOSURE FORM FACTOR FOR SSD DEVICES, VERSION 1.0 |
JESD253.01 | Aug 2021 |
This document specifies the enclosure form factor which can be used with various type of SSD devices: outline of the top and bottom enclosure, three screw holes to mount the enclosure on the system, and two clamping holes in the top enclosure to lock to the connector. Item 318.06. This is a minor editorial revision detailed in Annex D. Committee(s): JC-64.8 Free download. Registration or login required. |
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TEST METHOD FOR REAL-TIME SOFT ERROR RATE |
JESD89-1B | Jul 2021 |
This test is used to determine the Soft Error Rate (SER) of solid state volatile memory arrays and bistable logic elements (e.g. flip-flops) for errors which require no more than re-reading or re-writing to correct and as used in terrestrial environments. It simulates the operating condition of the device and is used for qualification, characterization, or reliability monitoring. This test is intended for execution in ambient conditions without the artificial introduction of radiation sources. Free download. Registration or login required. |
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TEST METHOD FOR ALPHA SOURCE ACCELERATED SOFT ERROR RATE |
JESD89-2B | Jul 2021 |
This test method is offered as standardized procedure to determine the alpha particle Soft Error Rate (SER) sensitivity of solid state volatile memory arrays and bistable logic elements (e.g. flipflops) by measuring the error rate while the device is irradiated by a characterized, solid alph source. Free download. Registration or login required. |
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METHODS FOR CALCULATING FAILURE RATES IN UNITS OF FITS |
JESD85A | Jul 2021 |
This standard establishes methods for calculating failure rates in units of FITs by using data in varying degrees of detail such that results can be obtained from almost any data set. The objective is to provide a reference to the way failure rates are calculated. Committee(s): JC-14.3 Free download. Registration or login required. |
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HIGH TEMPERATURE STORAGE LIFE |
JESD22-A103E.01 | Jul 2021 |
The test is applicable for evaluation, screening, monitoring, and/or qualification of all solid state devices. The high temperature storage test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure mechanisms and time-to failure distributions of solid state electronic devices, including nonvolatile memory devices (data retention failure mechanisms). Thermally activated failure mechanisms are modeled using the Arrhenius Equation for acceleration. During the test, accelerated stress temperatures are used without electrical conditions applied. This test may be destructive, depending on time, temperature and packaging (if any). Committee(s): JC-14.1 Available for purchase: $55.00 Add to Cart Paying JEDEC Members may login for free access. |
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DDR4 SDRAM STANDARD |
JESD79-4D | Jul 2021 |
This document defines the DDR4 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this Standard is to define the minimum set of requirements for JEDEC compliant 2 Gb through 16 Gb for x4, x8, and x16 DDR4 SDRAM devices. This standard was created based on the DDR3 standard (JESD79-3) and some aspects of the DDR and DDR2 standards (JESD79, JESD79-2). Committee Item 1716.78H Committee(s): JC-42.3C Available for purchase: $284.00 Add to Cart Paying JEDEC Members may login for free access. |
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HIGHLY ACCELERATED TEMPERATURE AND HUMIDITY STRESS TEST (HAST) |
JESD22-A110E.01 | May 2021 |
The purpose of this test method is to evaluate the reliability of nonhermetic packaged solid state devices in humid environments. It employs severe conditions of temperature, humidity, and bias that accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors which pass through it. This is a minor editorial edit to JESD22A110E, July 2015 approved by the formulating committee. Committee(s): JC-14.1 Free download. Registration or login required. |
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ACCELERATED MOISTURE RESISTANCE - UNBIASED HAST |
JESD22-A118B.01 | May 2021 |
The Unbiased HAST is performed for the purpose of evaluating the reliability of nonhermetic packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under noncondensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. Bias is not applied in this test to ensure the failure mechanisms potentially overshadowed by bias can be uncovered (e.g., galvanic corrosion). This test is used to identify failure mechanisms internal to the package and is destructive. Committee(s): JC-14.1 Free download. Registration or login required. |