Global Standards for the Microelectronics Industry
Standards & Documents Search
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Document # | Date |
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THE MEASUREMENT OF TRANSISTOR EQUIVALENT NOISE VOLTAGE AND EQUIVALENT NOISE CURRENT AT FREQUENCIES OF UP TO 20 kHzStatus: Reaffirmed April 1981, April 1999, March 2009 |
JESD354 | Apr 1968 |
This standard provides a method for determining values, for device registration purposes, for transistor equivalent noise voltage and equivalent noise current at frequencies up to 20 kHz. This method is applicable to transistors whose noise has a Gaussian, flat (white) or I/f power distribution. Formerly known as RS-354 and/or EIA-354 Committee(s): JC-25 Free download. Registration or login required. |
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THE MEASUREMENT OF SMALL-SIGNAL VHF-UHF TRANSISTOR SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO:Status: ReaffirmedApril 1981, April 1999, March 2009 |
JESD371 | Feb 1970 |
This standard describes the method to be used for the measurement of small-signal VHF-UHF transistor short-circuit forward current transfer ratio, in preparing data sheets for JEDEC registration of low power transistors. Formerly known as RS-371 and/or EIA-371. Committee(s): JC-25 Free download. Registration or login required. |
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THE MEASUREMENT OF SMALL-SIGNAL VHF-UHF TRANSISTOR ADMITTANCE PARAMETERS:Status: ReaffirmedApril 1981, April 1999, March 2009 |
JESD372 | May 1970 |
This standard describes the method to be used for the measurement of small-signal VHF-UHF transistor admittance parameters, in preparing data sheets for JEDEC registration of low power transistors. Formerly known as RS-372 and/or EIA-372 Committee(s): JC-25 Free download. Registration or login required. |
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TEST TRACE FOR 64 GB - 128 GB SSD |
JESD219A_TT | Jul 2012 |
The Test Trace file is a supporting file for implementation of the endurance verification client workload and is used in conjunction with JESD219A. This Test Trace is derived from the 128 GB Master Trace using the compression method described in JESD219 to enable testing on SSDs with a capacity range of 64 GB to 128 GB. All characteristics of this Test Trace are identical to the Master Trace except that the maximum LBA represents an SSD user capacity of 64 GB. Committee(s): JC-64.8 Free download. Registration or login required. |
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TEST STANDARD FOR THE MEASUREMENT OF PROTON RADIATION SINGLE EVENT EFFECTS IN ELECTRONIC DEVICES |
JESD234 | Oct 2013 |
This test standard defines the requirements and procedures for 40 to 500 MeV proton irradiation of electronic devices for Single Event Effects (SEE), and reporting the results. Protons are capable of causing SEE by both direct and indirect ionization, however, in this energy range, indirect ionization will be the dominant cause of SEE [1-3]. Indirect ionization is produced from secondary particles of proton/material nuclear reactions, where the material is Si or any other element present in the semiconductor. Direct proton ionization is thought to be a minor source of SEE, at these energies. This energy range is also selected to coincide with the commonly used proton facilities, and result in the fewest energy dependent issues during test. Free download. Registration or login required. |
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TEST PROCEDURE FOR THE MANAGEMENT OF SINGLE-EVENT EFFECTS IN SEMICONDUCTOR DEVICES FROM HEAVY ION IRRADIATION: |
JESD57A | Nov 2017 |
This test method defines requirements and procedures for ground simulation and single event effects (SEE) and implementation of the method in testing integrated circuits. This standard is valid when using a cyclotron or Van de Graaff accelerator. Microcircuits under test must be delidded. The ions used at the facilities have an atomic number Z > 2. It does not apply to SEE testing that uses protons, neutrons, or other lighter particles. This standard is designed to eliminate any misunderstanding between users of the method and test facilities, to minimize delays, and to promote standardization of testing and test data. Committee(s): JC-13.4 Free download. Registration or login required. |
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TEST METHODS TO CHARACTERIZE VOIDING IN PRE-SMT BALL GRID ARRAY PACKAGES |
JESD217A.01 | Nov 2022 |
This publication provides an overview of solder void types, outlines current metrologies and test methods used for pre-SMPT solder void characterization and potential limitations, and prescribes sampling strategy for data collection, and tolerance guidelines for corrective measures. Committee(s): JC-14.1 Free download. Registration or login required. |
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TEST METHODS FOR THE COLLECTOR-BASE TIME CONSTANT AND FOR THE RESISTIVE PART OF THE COMMON-EMITTER INPUT IMPEDANCEStatus: Reaffirmed November 1963, June 1972, April 1981, April 1999, October 2002 |
JESD284-A | Nov 1963 |
The test methods described in this Standard are generally applicable to alloy-like devices for which the usual simplified equivalent circuits can be employed. Formerly known as EIA-284-A (November 1963). Became JESD284-A when reaffirmed in October 2002. Committee(s): JC-25 Free download. Registration or login required. |
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TEST METHODS AND CHARACTER DESIGNATION FOR LIQUID CRYSTAL DEVICES: |
JESD23 | May 1982 |
This standard specifies a collection of procedures for testing and character designation of liquid crystal devices. Free download. Registration or login required. |
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TEST METHODS AND ACCEPTANCE PROCEDURES FOR THE EVALUATION OF POLYMERIC MATERIALS:Status: Reaffirmed May 2023 |
JESD72A | Mar 2018 |
This Test Method covers the minimum requirements that should be in effect for the evaluation and acceptance of polymeric materials for use in industrial, military, space, and other special-condition products which may require capabilities beyond standard commercial microelectronics applications. It is not the intent of this Publication to specify a material, but to evaluate the material to assure that the quality and reliability of the microelectronic devices are not compromised. This document replaces JEP105, JEP107 and JEP112. Committee(s): JC-13.5 Free download. Registration or login required. |
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Test Method for Total Ionizing Dose (TID) from X-ray Exposure in Terrestrial Applications |
JESD22-B121 | Nov 2023 |
This test method covers X-ray imaging for terrestrial applications on packaged devices. Free download. Registration or login required. |
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TEST METHOD FOR THE MEASUREMENT OF MOISTURE DIFFUSIVITY AND WATER SOLUBILITY IN ORGANIC MATERIALS USED IN ELECTRONIC DEVICES |
JESD22-A120C | Jan 2022 |
This standard details the procedures for the measurement of characteristic bulk material properties of moisture diffusivity and water solubility in organic materials used in the packaging of electronic devices. These two material properties are important parameters for the effective reliability performance of plastic packaged surface mount devices after exposure to moisture and subjected to high temperature solder reflow. Committee(s): JC-14.1 Free download. Registration or login required. |
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TEST METHOD FOR REAL-TIME SOFT ERROR RATE |
JESD89-1B | Jul 2021 |
This test is used to determine the Soft Error Rate (SER) of solid state volatile memory arrays and bistable logic elements (e.g. flip-flops) for errors which require no more than re-reading or re-writing to correct and as used in terrestrial environments. It simulates the operating condition of the device and is used for qualification, characterization, or reliability monitoring. This test is intended for execution in ambient conditions without the artificial introduction of radiation sources. Free download. Registration or login required. |
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TEST METHOD FOR ESTABLISHING X-RAY TOTAL DOSE LIMIT FOR DRAM DEVICES |
JESD22-B130 | Sep 2022 |
This test method is offered as a standardized procedure to determine the total dose limit of DRAMs by measuring its refresh time tRef degradation after the device is irradiated with an X-Ray dose. This test method is applicable to any packaged device that contains a DRAM die or any embedded DRAM structure. Some indirect test methods such as wafer level characterization of total dose induced changes in leakage of access transistors are not described in this standard but are permissible as long as a good correlation is established. Committee(s): JC-14.1 Free download. Registration or login required. |
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TEST METHOD FOR BEAM ACCELERATED SOFT ERROR RATE |
JESD89-3B | Sep 2021 |
This test is used to determine the terrestrial cosmic ray Soft Error Rate (SER) sensitivity of solid state volatile memory arrays and bistable logic elements (e.g., flip-flops) by measuring the error rate while the device is irradiated in a neutron or proton beam of known flux. The results of this accelerated test can be used to estimate the terrestrial cosmic ray induced SER for a given terrestrial cosmic ray radiation environment. This test cannot be used to project alpha-particle induced SER. Committee(s): JC-14.1 Free download. Registration or login required. |
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TEST METHOD FOR ALPHA SOURCE ACCELERATED SOFT ERROR RATE |
JESD89-2B | Jul 2021 |
This test method is offered as standardized procedure to determine the alpha particle Soft Error Rate (SER) sensitivity of solid state volatile memory arrays and bistable logic elements (e.g. flipflops) by measuring the error rate while the device is irradiated by a characterized, solid alph source. Free download. Registration or login required. |
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TEST BOARDS FOR THROUGH-HOLE PERIMETER LEADED PACKAGE THERMAL MEASUREMENTS: |
JESD51-10 | Jul 2000 |
This standard covers the design of printed circuit boards (PCBs) used in the thermal characterization of Dual-Inline Packages (DIP) and Single-Inline Packages (SIP). It is intended to be used in conjunction with the JESD51 series of standards that cover the test methods and test environments. JESD51-10 was developed to give a figure-of-merit of thermal performance that allows for accurate comparisons of packages from different suppliers. It can be used to give a first order approximation of system performance and, in conjunction with the other JESD51 PCB standards, allows for comparisons of the various package families. Committee(s): JC-15.1 Free download. Registration or login required. |
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TEST BOARDS FOR THROUGH-HOLE AREA ARRAY LEADED PACKAGE THERMAL MEASUREMENT: |
JESD51-11 | Jun 2001 |
This standard covers the design of printed circuit boards (PCBs) used in the thermal characterization of Pin Grid Array (PGA) packages. It is intended to be used in conjunction with the JESD51 series of standards that cover the test methods and test environments. JESD51-11 was developed to give a figure-of-merit of thermal performance that allows for accurate comparisons of packages from different suppliers. It can be used to give a first order approximation of system performance and, in conjunction with the other JESD51 PCB standards, allows for comparisons of the various package families. Committee(s): JC-15.1 Free download. Registration or login required. |
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TEST BOARDS FOR AREA ARRAY SURFACE MOUNT PACKAGE THERMAL MEASUREMENTS: |
JESD51- 9 | Jul 2000 |
This standard covers the design of printed circuit boards (PCBs) used in the thermal characterization of ball grid array (BGA) and land grid array (LGA) packages. It is intended to be used in conjunction with the JESD51 series of standards that cover the test methods and test environments. JESD51-9 was developed to give a figure-of-merit of thermal performance that allows for accurate comparisons of packages from different suppliers. It can be used to give a first order approximation of system performance and, in conjunction with the other JESD51 PCB standards, allows for comparisons of the various package families. Committee(s): JC-15.1 Free download. Registration or login required. |
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TERMS, DEFINITIONS, AND LETTER SYMBOLS FOR MICROELECTRONIC DEVICES: |
JESD99C | Dec 2012 |
This standard will be useful to users, manufacturers, educators, technical writers, and others interested in the characterization, nomenclature, and classification of microelectronics devices. There are general guidelines for both letter symbols and abbreviations applicable to all integrated circuits, and detailed sections for digital ICs, linear (analog) ICs, interface ICs (including D/A and A/D converters), voltage regulators, charge-transfer devices. The standard lists and defines more than 400 of the most common physical and electrical terms applicable to these devices and shows the industry-standard symbol and abbreviations that have been established for such terms. Committee(s): JC-10 Free download. Registration or login required. |
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TERMS, DEFINITIONS, AND LETTER SYMBOLS FOR MICROCOMPUTERS, MICROPROCESSORS, AND MEMORY INTEGRATED CIRCUITS: |
JESD100B.01 | Dec 2002 |
A revised reference for technical writers and educators, manufacturers, buyers and users of microprocessors, microcomputers, mircocontrollers, memory ICs, and other complex devices. The terms and their definitions in this standard have been updated and are in general agreement with the latest publications of the IEEE and the IEC. The companion standard for other integrated circuits is JESD99A. Also included is a system for generating symbols for time intervals found in complex sequential circuits, including memories. JESD100B.01 is the first minor revision of JESD100-B, December 1999. Annex A briefly shows entries that have changed. Committee(s): JC-10 Free download. Registration or login required. |
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TERMS, DEFINITIONS, AND LETTER SYMBOLS FOR DISCRETE SEMICONDUCTOR AND OPTOELECTRONIC DEVICES |
JESD77D | Aug 2012 |
A revised and significantly expanded reference for technical writers and educators, manufacturers, buyers and users of discrete semiconductor and optoelectronic devices, is now available. This document includes extensive information on: letter symbol conventions; diodes and rectifiers (including signal, rectifier, microwave, tunnel and backward, voltage-regulator, voltage-reference, current regulator, and varactor diodes); transistors (including FETs, JFETs, and IGBTs); photosensitive devices, photoemitters, and optocouplers; thyristors and PUTs; and transient voltage suppressors. Terms and symbols, with their definitions, are arranged alphabetically by product type. Where applicable, graphical symbols are also included. The purpose of this standard is to promote the uniform use of symbols, abbreviations, terms, and definitions throughout the semiconductor industry. Committee(s): JC-10 Free download. Registration or login required. |
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TERMS, DEFINITIONS AND UNITS GLOSSARY FOR LED THERMAL TESTING |
JESD51-53A | Oct 2022 |
This document provides a unified collection of the commonly used terms and definitions in the area of LED thermal measurements. The terms and definitions provided herein extend beyond those used in the JESD51 family of documents, especially in JESD51-13, in order to include other often used terms and definitions in the area of light output measurements of LEDs. Definitions, symbols and notations regarding light output measurements used here are consistent with those defined in JESD77C.01 and with those defined by CIE (International Commission on Illumination), especially in the International Lighting Vocabulary, CIE S 017/E:2011 ILV and in the CIE 127-2007 document as well as in some other relevant standards of other standardization bodies from the solid-state lighting industry, e.g., ANSI/IESNA RP 16-05. Committee(s): JC-15 Free download. Registration or login required. |
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TEMPERATURE, BIAS, AND OPERATING LIFE |
JESD22-A108G | Nov 2022 |
This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the devices’ operating condition in an accelerated way, and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as burn-in, may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this document. Free download. Registration or login required. |
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Temperature Cycling |
JESD22-A104F.01 | Apr 2023 |
This standard applies to single-, dual- and triple-chamber temperature cycling in an air or other gaseous medium and covers component and solder interconnection testing. Committee(s): JC-14.1 Free download. Registration or login required. |
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SYMBOL AND LABEL FOR ELECTROSTATIC SENSITIVE DEVICESStatus: Reaffirmed October 1988, September 1996, September 2009, May 2018, October 2024 |
JESD471 | Feb 1980 |
This standard will be useful to anyone engaged in handling semiconductor devices and integrated circuits that are subject to permanent damage due to electrostatic potentials. The standard establishes a symbol and label that will gain the attention of those persons who might inflict electrostatic damage to the device. The label which is placed on the lowest practical level of packaging contains the words 'ATTENTION - OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES'. The symbol contained in this label, which may be used on the device itself, shows a hand in a triangle with a bar through it. Formerly known as EIA-471. Free download. Registration or login required. |
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SUPERSEDED BY THE TEST METHODS INDICATED BY 'JESD22-'Status: Superseded |
JESD22- B | Jan 2000 |
A complete set of test methods can be obtained from Global Engineering Documents Committee(s): JC-14.1 |
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STUB SERIES TERMINATED LOGIC FOR 1.8 V (SSTL_18): |
JESD8-15A | Sep 2003 |
This standard defines the input, output specifications and ac test conditions for devices that are designed to operate in the SSTL_18 logic switching range, nominally 0 V to 1.8 V. The standard may be applied to ICs operating with separate VDD and VDDQ supply voltages. The VDD value is not specified in this standard; however VDD and VDDQ will have the same voltage level in many cases. Committee(s): JC-16 Free download. Registration or login required. |
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STRESS-TEST-DRIVEN QUALIFICATION OF INTEGRATED CIRCUITS |
JESD47L | Dec 2022 |
This standard describes a baseline set of acceptance tests for use in qualifying electronic components as new products, a product family, or as products in a process which is being changed. Available for purchase: $87.38 Add to Cart Paying JEDEC Members may login for free access. |
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STEADY-STATE TEMPERATURE-HUMIDITY BIAS LIFE TEST |
JESD22-A101D.01 | Jan 2021 |
This standard establishes a defined method and conditions for performing a temperature-humidity life test with bias applied. The test is used to evaluate the reliability of nonhermetic packaged solid state devices in humid environments. It employs high temperature and humidity conditions to accelerate the penetration of moisture through external protective material or along interfaces between the external protective coating and conductors or other features that pass through it. This revision enhances the ability to perform this test on a device which cannot be biased to achieve very low power dissipation. Free download. Registration or login required. |
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Statistical Process Control Systems |
JESD557D | May 2023 |
This standard specifies the general requirements of a statistical process control (SPC) system. Committee(s): JC-14 Free download. Registration or login required. |
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STANDARD TEST STRUCTURE FOR RELIABILITY ASSESSMENT OF AlCu METALLIZATIONS WITH BARRIER MATERIALSStatus: Reaffirmed 04/17/2023 |
JESD87 | Apr 2023 |
This document describes design of test structures needed to assess the reliability of aluminum-copper, refractory metal barrier interconnect systems. This includes any metal interconnect system where a refractory metal barrier or other barrier material prevents the flow of aluminum and/or copper metal ions from moving between interconnect layers. This document is not intended to show design of test structures to assess aluminum or aluminum-copper alloy systems, without barriers to Al and Cu ion movement, nor for Cu only metal systems. Some total interconnect systems might not include barrier materials on all metal layers. The structures in this standard are designed for cases where a barrier material separates two Al or Al alloy metal layers. The purpose of this document is to describe the design of test structures needed to assess electromigration (EM) and stress-induced-void (SIV) reliability of AlCu barrier metal systems. Committee(s): JC-14.2, JC-14.21 Free download. Registration or login required. |
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STANDARD TEST PROCEDURE FOR NOISE MARGIN MEASUREMENTS FOR SEMICONDUCTOR LOGIC GATING MICROCIRCUITSStatus: Rescinded, October 2008 |
JESD390A | Feb 1981 |
Reaffirmed September 2003 Free download. Registration or login required. |
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STANDARD TEST METHOD UTILIZING X-RAY FLUORESCENCE (XRF) FOR ANALYZING COMPONENT FINISHES AND SOLDER ALLOYS TO DETERMINE TIN (Sn) - LEAD (Pb) CONTENTReaffirmed June 2023 |
JESD213A | Apr 2017 |
This document is intended to be used by Original Component Manufacturers who deliver electronic components and Original Equipment Manufacturers who are the platform system integrators. It is intended to be applied prior to delivery by the OCMs and may be used by OEM system engineers and procuring activities as well as U.S Government Department of Defense system engineers, procuring activities and repair centers. This Standard establishes the instrumentation, techniques, criteria, and methods to be utilized to quantify the amount of Lead (Pb) in Tin-Lead (Sn/Pb) alloys and electroplated finishes containing at least 3 weight percent (wt%) Lead (Pb) using X-Ray Fluorescence (XRF) equipment. Reaffirmed June 2023
Committee(s): JC-13 Free download. Registration or login required. |
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STANDARD TEST LOADS FOR DUAL-SUPPLY LEVEL TRANSLATION DEVICES |
JESD203 | Nov 2005 |
This standard defines ac test loads for dual-supply level translation devices. Uniform test loads enable easy comparison of electrical parameters of dual-supply level translation devices across functions, logic families and IC suppliers. This standard is only intended to apply to devices released subsequent to th Free download. Registration or login required. |
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STANDARD TEST AND PROGRAMMING LANGUAGE (STAPL): |
JESD71 | Aug 1999 |
STAPL is a vendor- and platform-independent language for programming and testing devices via the IEEE standard 1149.1 interface, commonly known as JTAG. STAPL enables programming of designs into programmable logic devices (PLDs) offered by a variety of PLD vendors. STAPL is also suitable for testing 1149.1-compliant devices. Committee(s): JC-42.1 Free download. Registration or login required. |
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STANDARD SPECIFICATION FOR DESCRIPTION OF B SERIES CMOS DEVICES: |
JESD13-B | May 1980 |
This standard provides for uniformity, multiplicity of sources, elimination of confusion, and ease of device specifications and system design by users. It gives electrical levels and timing diagrams for B Series CMOS devices. Committee(s): JC-40.2 Free download. Registration or login required. |
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STANDARD METHOD FOR MEASURING AND USING THE TEMPERATURE COEFFICIENT OF RESISTANCE TO DETERMINE THE TEMPERATURE OF A METALLIZATION LINE:Status: Reaffirmed October 2012, September 2018 |
JESD33B | Feb 2004 |
This newly revised test method provides a procedure for measuring the temperature coefficient of resistance, TCR(T), of thin-film metallizations used in microelectronic circuits and devices. Procedures are also provided to use the TCR(T) to determine the temperature of a metallization line under Joule-heating conditions and to determine the ambient temperature where the metallization line is used as a temperature sensor. Originally, the method was intended only for aluminum-based metallizations and for other metallizations that satisfy the linear dependence and stability stipulations of the method. The method has been revised to make it explicitly applicable to copper-based metallizations, as well, and at temperatures beyond where the resistivity of copper is no longer linearly dependent on temperature (beyond approximately 200 °C). Using the TCR(T) measured for copper in the linear-dependent region, a factor is used to correct the calculated temperature at these higher temperatures. Committee(s): JC-14.2 Free download. Registration or login required. |
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STANDARD METHOD FOR CALCULATING THE ELECTROMIGRATION MODEL PARAMETERS FOR CURRENT DENSITY AND TEMPERATURE:Status: Reaffirmed 4/17/23 |
JESD63 | Apr 2023 |
This method provides procedures to calculate sample estimates and their confidence intervals for the electromigration model parameters of current density and temperature. The model parameter for current density is the exponent (n) to which the current density is raised in Black's equation. The parameter for temperature is the activation energy for the electromigration failure process. Committee(s): JC-14.2 Free download. Registration or login required. |
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STANDARD LOGNORMAL ANALYSIS OF UNCENSORED DATA, AND OF SINGLY RIGHT -CENSORED DATA UTILIZING THE PERSSON AND ROOTZEN METHOD: |
JESD37A | Aug 2017 |
This standard details techniques for estimating the values of a two parameter lognormal distribution from complete lifetime data (all samples in an experiment have failed) or singly right-censored lifetime data (the experiment have failed) or singly right-censored lifetime data gathered from rapid stress test; however, not all types of failure data can be analyzed with these techniques. Committee(s): JC-14.2 Free download. Registration or login required. |