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This standard defines the DC and AC operating conditions, I/O impedances, termination characteristics, and compliance test methods of I/O drivers and receivers used in multi-wire, multi-level signaling interfaces. The multi-wire interfaces defined by this specification all utilize quaternary signal levels. Item 153.00

Patents(): Kandou

Committee(s): JC-16

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This document provides a comprehensive definition of the MultiMediaCard, its environment, and handling. It also provides design guidelines and defines a tool box of macro functions and algorithms intended to reduce design-in costs.

Patents(): Samsung; Qimonda; Nokia

Committee(s): JC-64, JC-64.1

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This standard was jointly developed by JEDEC and the Open NAND Flash Interface Workgroup, hereafter referred to as ONFI. This standard defines a standard NAND flash device interface interoperability standard that provides means for system be designed that can support Asynchronous SDR, Synchronous DDR and Toggle DDR NAND flash devices that are interoperable between JEDEC and ONFI member implementations.

Committee(s): JC-42, JC-42.4

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Relevant JESD62 content has been consolidated into JESD50B, published October 2008 -Special Requirments for Maverick Product Elimination-.

Committee(s): JC-14.3

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This test method is to measure the deviation from uniform flatness of an integrated circuit package body for the range of thermal conditions experienced during the surface-mount soldering operation.

Committee(s): JC-14, JC-14.1

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This standard defines the specifications of interface parameters, signaling protocols, and features for PMIC device as used for memory module applications. The designation PMIC5000, PMIC5010 refers to the device specified by this document. The purpose is to provide a standard for the PMIC5000, PMIC5010 device for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use.

This is a minor update to correct the document name, and also remove the extraneous hard return in the middle of the description between “as” and “used”.

Committee(s): JC-40.1

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This standard defines the specification of interface parameters, signaling protocols, and features for PMIC devices used for memory module applications. The designation PMIC5100 refers to the device specified by this document. The purpose is to provide a standard for the PMIC5100 device for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. Item 336.01C

Committee(s): JC-40.1

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This document defines the 1.0 V Pseudo Open Drain Interface family of interface standards, POD10, which are generally expected to be implemented with differential amp-based input buffers that, when in single-ended mode, employ an externally supplied (or internal supplied) reference voltage controlled trip-point.

Committee(s): JC-16

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Editorial Terminology Update. This standard defines the DC and AC single-ended (data) and differential (clock) operating conditions, I/O impedances, and the termination and calibration scheme for 1.25 V Pseudo  Open Drain I/Os. The 1.25 V Pseudo Open Drain interface, also known as POD125, is primarily used to communicate with GDDR6 SGRAM devices.

Committee(s): JC-16

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Terminology Update.

This standard defines the dc and ac single-ended (data) and differential (clock) operating conditions, I/O impedance, and the termination and calibration scheme for 1.5 V Pseudo Open Drain I/Os. The 1.5 V Pseudo Open Drain interface, also known as POD15, is primarily used to communicate with GDDR4 and GDDR5 SGRAM devices. Item 135.01

Committee(s): JC-16

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The power and temperature cycling test is performed to determine the ability of a device to withstand alternate exposures at high and low temperature extremes and simultaneously the operating biases are periodically applied and removed. It is intended to simulate worst case conditions encountered in application environments. The power and temperature cycling test is considered destructive and is only intended for device qualification. This test method applies to semiconductor devices that are subjected to temperature excursions and required to power on and off during all temperatures.

Committee(s): JC-14, JC-14.1

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This standard contains a listing of terms and definitions and letter symbols; a description of established procedures that are followed in the assignment of semiconductor-industry-type designations to power transistors; electrical verification test; thermal characteristics; and a user's guide.

Committee(s): JC-25

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JESD92 was rescinded by the committee in June 2024 and has been superseded by JESD263.

This document defines a constant voltage stress test procedure for characterizing time-dependent dielectric breakdown or 'wear-out' of thin gate dielectrics used in integrated circuit technologies. The test is designed to obtain voltage and temperature acceleration parameters required to estimate oxide life at use conditions. The test procedure includes sophisticated techniques to detect breakdown in ultra-thin films that typically exhibit large tunneling currents and soft or noisy breakdown characteristics. This document includes an annex that discusses test structure design, methods to determine the oxide electric field in ultra-thin films, statistical models, extrapolation models, and example failure-rate calculations

Committee(s): JC-14, JC-14.2

JESD35A was rescinded by the committee in June 2024 and has been superseded by JESD263.

The revised JESD35 is intended for use in the MOS Integrated Circuit manufacturing industry. It describes procedures developed for estimating the overall integrity and reliability of thin gate oxides. Three basic test procedures are described, the Voltage-Ramp (V-Ramp), the Current-Ramp (J-Ramp) and the new Constant Current (Bounded J-Ramp) test. Each test is designed for simplicity, speed and ease of use. The standard has been updated to include breakdown criteria that are more robust in detecting breakdown in thinner gate oxides that may not experience hard thermal breakdown.

Committee(s): JC-14.2

This standard facilitates the procurement and use of semiconductor die products provided in bare or bumped die form, and provides requirements and guidance to die suppliers as to the levels of as-delivered performance, quality and reliability expected. It also reflects the special needs of die product customers in terms of design and application data.

Committee(s): JC-13

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This standard defines device pinouts for 14-, 16-, 20-, and 24-lead logic functions. This pinout standard specifically applies to the conversion of DIP-packaged logic devices to PSO-N/PQFN packages logic devices

The purpose of this standard is to provide a pinout standard for 14-, 16-, 20-, and 24-lead logic devices offered in 14-, 16-, 20-, and 24-lead PSO-N/PQFN packages for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use

Committee(s): JC-40, JC-40.1

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Committee(s): JC-14.4

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Terminology update.  

This document establishes an interface standard for the data path and control plane interface functions for an RFIC component and/or a BBIC component.

Committee(s): JC-61

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This standard is intended to identify a core set of qualification tests that apply specifically for Power Amplifier Modules and their primary application in mobile devices such as cellular phones. This standard is intended to describe specific stresses and failure mechanisms that are specific to compound semiconductors and power amplifier modules. It is intended to establish more meaningful and efficient qualification testing.

Committee(s): JC-14.7

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