Global Standards for the Microelectronics Industry
Standards & Documents Search
Title | Document # | Date |
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TEST METHODS FOR THE COLLECTOR-BASE TIME CONSTANT AND FOR THE RESISTIVE PART OF THE COMMON-EMITTER INPUT IMPEDANCEStatus: Reaffirmed November 1963, June 1972, April 1981, April 1999, October 2002 |
JESD284-A | Nov 1963 |
The test methods described in this Standard are generally applicable to alloy-like devices for which the usual simplified equivalent circuits can be employed. Formerly known as EIA-284-A (November 1963). Became JESD284-A when reaffirmed in October 2002. Committee(s): JC-25 Free download. Registration or login required. |
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RANGES AND CONDITIONS FOR SPECIFYING BETA FOR LOW POWER, AUDIO FREQUENCY TRANSISTORS FOR ENTERTAINMENT SERVICE:Status: ReaffirmedApril 1981, April 1999, March 2009 |
JESD302 | Jan 1965 |
This standard establishes the preferred rating ranges and conditions for specifying beta for low power, audio frequency transistors intended for entertainment service. Formerly known as RS-302 and EIA-302. Committee(s): JC-25 Free download. Registration or login required. |
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MEASUREMENT OF SMALL SIGNAL HF, VHF, AND UHF POWER GAIN OF TRANSISTORSStatus: Reaffirmed April 1981, April 1999, March 2009 |
JESD306 | May 1965 |
This standard provides a method of measurement for small-signal HF, VHF, and UHF power gain of low power transistors. Formerly known as RS-306 and/or EIA-306. Committee(s): JC-25 Free download. Registration or login required. |
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VOLTAGE REGULATOR DIODE NOISE VOLTAGE MEASUREMENTStatus: Reaffirmed January 1992, April 1999, April 2002 |
JESD307 | May 1965 |
This standard is intended to cover the measurement of noise voltage in voltage regulator diodes in the reverse breakdown region. It describes noise voltage measurements at specified conditions, but may be used as a guide for making such measurements at other than specified conditions. Formerly known as RS-307 and/or EIA-307 Committee(s): JC-22.4 Free download. Registration or login required. |
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MEASUREMENT OF SMALL VALUES OF TRANSISTOR CAPACITANCE:Status: ReaffirmedSeptember 1981, April 1999, October 2002 |
JESD6 | Feb 1967 |
This standard gives a test method for measuring transistor capacitance using a three-terminal bridge which employs a guard-circuit that eliminates the effect of extraneous capacitance. Committee(s): JC-25 Free download. Registration or login required. |
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STANDARD FOR THE MEASUREMENT OF CREStatus: Reaffirmed April 1981, April 1999, March 2009 |
JESD340 | Nov 1967 |
This standard offers an easily measured parameter which is one of the significant characteristics in determining the stability of a transistor intended for small-signal operation. The measurement technique allows rapid testing. Its correlation to AC stability will help to establish the interchangeability of a device. Formerly known as RS-340 and/or EIA-340. Committee(s): JC-25 Free download. Registration or login required. |
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THE MEASUREMENT OF TRANSISTOR NOISE FIGURE AT FREQUENCIES UP TO 20 kHz BY SINUSOIDAL SIGNAL-GENERATOR METHODStatus: Reaffirmed April 1981, April 1999, March 2009 |
JESD353 | Apr 1968 |
This noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution. Formerly known as RS-353 and/or EIA-353 Committee(s): JC-25 Free download. Registration or login required. |
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THE MEASUREMENT OF TRANSISTOR EQUIVALENT NOISE VOLTAGE AND EQUIVALENT NOISE CURRENT AT FREQUENCIES OF UP TO 20 kHzStatus: Reaffirmed April 1981, April 1999, March 2009 |
JESD354 | Apr 1968 |
This standard provides a method for determining values, for device registration purposes, for transistor equivalent noise voltage and equivalent noise current at frequencies up to 20 kHz. This method is applicable to transistors whose noise has a Gaussian, flat (white) or I/f power distribution. Formerly known as RS-354 and/or EIA-354 Committee(s): JC-25 Free download. Registration or login required. |
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THE MEASUREMENT OF SMALL-SIGNAL VHF-UHF TRANSISTOR SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO:Status: ReaffirmedApril 1981, April 1999, March 2009 |
JESD371 | Feb 1970 |
This standard describes the method to be used for the measurement of small-signal VHF-UHF transistor short-circuit forward current transfer ratio, in preparing data sheets for JEDEC registration of low power transistors. Formerly known as RS-371 and/or EIA-371. Committee(s): JC-25 Free download. Registration or login required. |
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THE MEASUREMENT OF SMALL-SIGNAL VHF-UHF TRANSISTOR ADMITTANCE PARAMETERS:Status: ReaffirmedApril 1981, April 1999, March 2009 |
JESD372 | May 1970 |
This standard describes the method to be used for the measurement of small-signal VHF-UHF transistor admittance parameters, in preparing data sheets for JEDEC registration of low power transistors. Formerly known as RS-372 and/or EIA-372 Committee(s): JC-25 Free download. Registration or login required. |
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MEASUREMENT OF SMALL VALUES OF TRANSISTOR CAPACITANCE:Status: ReaffirmedApril 1981, April 1999, March 2009 |
JESD398 | Jul 1972 |
This standard contains a three-terminal procedure for capacitance measurement with due precautions for shielding of extraneous effects due to terminal leads and metal enclosures. Formerly known as RS-398 and/or EIA-398 Committee(s): JC-25 Free download. Registration or login required. |
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MEASUREMENT OF SMALL-SIGNAL TRANSISTOR SCATTERING PARAMETERS:Status: ReaffirmedSeptember 1981, April 2000, October 2002 |
JESD25 | Nov 1972 |
This standard provides a test method and definition for small-signal conditions at microwave frequencies. Committee(s): JC-25 Free download. Registration or login required. |
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THERMAL RESISTANCE MEASUREMENTS OF CONDUCTION COOLED POWER TRANSISTORS:Status: ReaffirmedApril 1981, April 2001 |
JESD313-B | Oct 1975 |
This standard provides a test method for measuring thermal resistance for conduction cooled power transistors. Committee(s): JC-25 Free download. Registration or login required. |
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LOW FREQUENCY POWER TRANSISTORS:Status: ReaffirmedSeptember 1981, October 2002 |
JESD10 | Jan 1976 |
This standard consists of a listing of letter symbols, terms, and definitions that are used in power transistors. It also includes information on JEDEC registration procedures, verification tests, and thermal characteristics. Committee(s): JC-25 Free download. Registration or login required. |
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STANDARD FOR THE MEASUREMENT OF SMALL-SIGNAL TRANSISTOR SCATTERING PARAMETERS:Status: ReaffirmedApril 1999, March 2009 |
JESD435 | Apr 1976 |
This standard specifies the standard for the measurement of small-signal transistor scattering parameters. Formerly known as RS-435 and/or EIA-435 Committee(s): JC-25 Free download. Registration or login required. |
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SYMBOL AND LABEL FOR ELECTROSTATIC SENSITIVE DEVICESStatus: Reaffirmed October 1988, September 1996, September 2009, May 2018, October 2024 |
JESD471 | Feb 1980 |
This standard will be useful to anyone engaged in handling semiconductor devices and integrated circuits that are subject to permanent damage due to electrostatic potentials. The standard establishes a symbol and label that will gain the attention of those persons who might inflict electrostatic damage to the device. The label which is placed on the lowest practical level of packaging contains the words 'ATTENTION - OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES'. The symbol contained in this label, which may be used on the device itself, shows a hand in a triangle with a bar through it. Formerly known as EIA-471. |
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STANDARD SPECIFICATION FOR DESCRIPTION OF B SERIES CMOS DEVICES: |
JESD13-B | May 1980 |
This standard provides for uniformity, multiplicity of sources, elimination of confusion, and ease of device specifications and system design by users. It gives electrical levels and timing diagrams for B Series CMOS devices. Committee(s): JC-40.2 Free download. Registration or login required. |
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STANDARD LIST OF VALUES TO BE USED IN SEMICONDUCTOR DEVICE SPECIFICATIONS AND REGISTRATION FORMAT:Status: ReaffirmedMarch 2001 |
JESD419-A | Oct 1980 |
This document contains standard lists of values which are recommended for use in semiconductor device specification and JEDEC Registration Formats. Good reasons should exist in those cases where values are used that are not included in these lists. Formerly known as EIA-419-A, that superseded JEP74 (February 1996). Committee(s): JC-25 Free download. Registration or login required. |
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STANDARD TEST PROCEDURE FOR NOISE MARGIN MEASUREMENTS FOR SEMICONDUCTOR LOGIC GATING MICROCIRCUITSStatus: Rescinded, October 2008 |
JESD390A | Feb 1981 |
Reaffirmed September 2003 Free download. Registration or login required. |
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METHOD OF DIODE Q MEASUREMENTStatus: Reaffirmed April 1999, April 2002 |
JESD381-A | Nov 1981 |
This standard was updated and revised for the purpose of clarifying the method used to measure Q of a Voltage-Variable-Capacitance Diode in the low VHF range using an RF admittance bridge. Originally published November 1981. Approved as ANSI/EIA-381-A-1992, July 1992. Became JESD381-A after ANSI expiration July 2002. Committee(s): JC-22.4 Free download. Registration or login required. |