Global Standards for the Microelectronics Industry
Standards & Documents Search
Title | Document # |
Date![]() |
---|---|---|
A PROCEDURE FOR MEASURING P-CHANNEL MOSFET NEGATIVE BIAS TEMPERATURE INSTABILITIESStatus: Rescinded September 2021 (JC-14.2-21-183) |
JESD90 | Nov 2004 |
This document hasbeen replaced by JESD241, September 2021. |
||
MECHANICAL SHOCKStatus: Supersededby JEDEC JESD22-B110B, July 2013 |
JESD22-B104C | Nov 2004 |
This test is intended to determine the suitability of component parts for use in electronic equipment that may be subjected to moderately severe shocks as a result of suddenly applied forces or abrupt changes in motion produced by rough handling, transportation, or field operation. Shock of this type may disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification. It is normally applicable to cavity-type packages. |
||
METHOD FOR CHARACTERIZING THE ELECTROMIGRATION FAILURE TIME DISTRIBUTION OF INTERCONNECTS UNDER CONSTANT-CURRENT AND TEMPERATURE STRESSStatus: Reaffirmed April 2025 |
JESD202 | Mar 2006 |
This is an accelerated stress test method for determining sample estimates and their confidence limits of the median-time-to-failure, sigma, and early percentile of a log-Normal distribution, which are used to characterize the electromigration failure-time distribution of equivalent metal lines subjected to a constant current-density and temperature stress. Failure is defined as some pre-selected fractional increase in the resistance of the line under test. Analysis procedures are provided to analyze complete and singly, right-censored failure-time data. Sample calculations for complete and right-censored data are provided in Annex A. The analyses are not intended for the case when the failure distribution cannot be characterized by a single log-Normal distribution. Free download. Registration or login required. |
||
EARLY LIFE FAILURE RATE CALCULATION PROCEDURE FOR SEMICONDUCTOR COMPONENTS:Status: Reaffirmed January 2014, September 2019 |
JESD74A | Feb 2007 |
This standard defines methods for calculating the early life failure rate of a product, using accelerated testing, whose failure rate is constant or decreasing over time. For technologies where there is adequate field failure data, alternative methods may be used to establish the early life failure rate. The purpose of this standard is to define a procedure for performing measurement and calculation of early life failure rates. Projections can be used to compare reliability performance with objectives, provide line feedback, support service cost estimates, and set product test and screen strategies to ensure that the ELFR meets customers' requirements. Free download. Registration or login required. |
||
ISOTHERMAL ELECTROMIGRATION TEST PROCEDUREStatus: Reaffirmed April 2025 |
JESD61A.01 | Oct 2007 |
This standard describes an algorithm for the execution of the isothermal test, using computer-controlled instrumentation. The primary use of this test is for the monitoring of microelectronic metallization lines at wafer level (1) in process development, to evaluate process options, (2) in manufacturing, to monitor metallization reliability and (3) to monitor/evaluate process equipment. While it is developed as a fast WLR test, it can also be an effective tool for complementing the reliability data obtained through the standard package level electromigration test. Free download. Registration or login required. |
||
SOLDERABILITYStatus: Rescinded 2014, this document has been replaced by J-STD-002D. |
JESD22-B102E | Oct 2007 |
This test method provides optional conditions for preconditioning and soldering for the purpose of assessing the solderability of device package terminations. It provides procedures for dip & look solderability testing of through hole, axial and surface mount devices and a surface mount process simulation test for surface mount packages. The purpose of this test method is to provide a means of determining the solderability of device package terminations that are intended to be joined to another surface using lead (Pb) containing or Pb-free solder for the attachment. Committee(s): JC-14.1 |
||
MEASURING WHISKER GROWTH ON TIN AND TIN ALLOY SURFACE FINISHESStatus: Reaffirmed May 2014, September 2019 |
JESD22-A121A | Jul 2008 |
The predominant terminal finishes on electronic components have been Sn-Pb alloys. As the industry moves toward Pb-free components and assembly processes, the predominant terminal finish materials will be pure Sn and alloys of Sn, including Sn-Bi and Sn-Ag Pure Sn and Sn-based alloy electrodeposits and solder-dipped finishes may grow tin whiskers, which could electrically short across component terminals or break off the component and degrade the performance of electrical or mechanical parts. Free download. Registration or login required. |
||
ENVIRONMENTAL ACCEPTANCE REQUIREMENTS FOR TIN WHISKER SUSCEPTIBILITY OF TIN AND TIN ALLOY SURFACE FINISHEDStatus: Reaffirmed May 2014, January 2020 |
JESD201A | Sep 2008 |
The methodology described in this document is applicable for environmental acceptance testing of tin based surface finishes and mitigation practices for tin whiskers. This methodology may not be sufficient for applications with special requirements, (i.e., military, aerospace, etc.). Additional requirements may be specified in the appropriate requirements (procurement) documentation. Free download. Registration or login required. |
||
ELECTROSTATIC DISCHARGE (ESD) SENSITIVITY TESTING HUMAN BODY MODEL (HBM)Status: Supersededby ANSI/ESDA/JEDEC JS-001, April 2010. |
JESD22-A114F | Dec 2008 |
This test method establishes a standard procedure for testing and classifying microcircuits according to their susceptibility to damage or degradation by exposure to a defined electrostatic Human Body Model (HBM) discharge (ESD). The objective is to provide reliable, repeatable HBM ESD test results so that accurate classifications can be performed. Committee(s): JC-14.1 |
||
ELECTRICAL PARAMETERS ASSESSMENTStatus: Reaffirmed May 2014, September 2020 |
JESD86A | Oct 2009 |
This standard is intended to describe various methods for obtaining electrical variate data on devices currently produced on the manufacturing and testing process to be qualified. The intent is to assess the device's capability to function within the specification parameters over time and the application environment (operating range of temperature, voltage, humidity, input/output levels, noise, power supply stability etc.). Committee(s): JC-14.3 Free download. Registration or login required. |
||
COPLANARITY TEST FOR SURFACE-MOUNT SEMICONDUCTOR DEVICESStatus: Reaffirmed February 2023 |
JESD22-B108B | Sep 2010 |
The purpose of this test is to measure the deviation of the terminals (leads or solder balls) from coplanarity at room temperature for surface-mount semiconductor devices. This test method is applicable for inspection and device characterization. If package warpage or coplanarity is to be characterized at reflow soldering temperatures, then JESD22-B112 should be used. Free download. Registration or login required. |
||
ELECTROSTATIC DISCHARGE (ESD) SENSITIVITY TESTING MACHINE MODEL (MM)This document is inactive as of September 2016 |
JESD22-A115C | Nov 2010 |
JESD22-A115 is a reference document; it is not a requirement per JESD47 (Stress Test Driven Qualification of Integrated Circuits). Machine Model (MM) as described in JESD22-A115 should not be used as a requirement for integrated circuit ESD qualification. Only human-body model (HBM) and charged-device model (CDM) are the necessary ESD qualification test methods as specified in JESD47. Refer to JEP172: Discontinuing Use of the Machine Model for Device ESD Qualification for more information. Committee(s): JC-14.1 |
||
MARKING PERMANENCYStatus: Reaffirmed August 2024 |
JESD22-B107D | Mar 2011 |
This test method provides two tests for determining the marking permanency of ink marked integrated circuits. A new non-destructive tape test method is introduced to quickly determine marking integrity. The test method also specifies a resistance to solvents method based upon MIL Std 883 Method 2015. Free download. Registration or login required. |
||
HERMETICITYStatus: Reaffirmed September 2017 |
JESD22-A109B | Nov 2011 |
Testing for hermeticity on commercial product is not normally done on standard molded devices that are not hermetic. Commercial product that this test method applies to has a construction that produces a hermetic package; examples of this are ceramic and metal packages. Most of these tests are controlled and updated in the military standards, the two standards that apply are MIL-STD-750 for discretes, & MIL-STD-883 for microcircuits. The test within these standards can be used for all package types. Within these standards the tests are similar; MIL-STD-750 Test Method 1071 Hermetic Seal is recommended for any commercial hermetic requirements. For MIL-STD-883 the applicable test method is 1014 Seal. Committee(s): JC-14.1 Free download. Registration or login required. |
||
PRODUCT DISCONTINUANCEStatus: Supersededby J-STD-048, November 2014 |
JESD48C | Dec 2011 |
This standard establishes the requirements for timely customer notification of planned product discontinuance, which will assist customers in managing end-of-life supply, or to transition on-going requirements to alternate products. |
||
CUSTOMER NOTIFICATION OF PRODUCT/PROCESS CHANGES BY SOLID-STATE SUPPLIERSStatus: SupersededBy J-STD-046, July 2016 |
JESD46D | Dec 2011 |
This standard establishes procedures to notify customers of semiconductor product and process changes. Requirements include: documentation; procedures for classification, notification and customer response; content; and records. Documentation of a suppliers change notification system should set clear and understandable expectations for both the originators of the change and their end customers. |
||
RF BIASED LIFE (RFBL) TESTStatus: Reaffirmed October 2024 |
JESD226 | Jan 2013 |
This stress method is used to determine the effects of RF bias conditions and temperature on Power Amplifier Modules (PAMs) over time. These conditions are intended to simulate the devices’ operating condition in an accelerated way, and they are expected to be applied primarily for device qualification and reliability monitoring. The purpose of this test is for use to determine the effects of nominal DC and RF bias conditions and high temperature on Power Amplifier Modules (PAMs) over time. It simulates the devices’ operating condition in an accelerated way, and is primarily intended for device qualification testing and reliability monitoring which stresses all of the modules’ thermal and electrical failure mechanisms anticipated in typical use. Committee(s): JC-14.7 Free download. Registration or login required. |
||
SALT ATMOSPHEREStatus: Reaffirmed September 2020 |
JESD22-A107C | Apr 2013 |
Salt atmosphere is a destructive, accelerated stress that simulates the effects of severe seacoast atmosphere on all exposed surfaces. Such stressing and post-stress testing determine the resistance of solid-state devices to corrosion and may be performed on commercial and industrial product in molded or hermetic packages. Free download. Registration or login required. |
||
QUALITY SYSTEM ASSESSMENT (SUPERSEDES EIA670): |
JESD670A | Oct 2013 |
This standard provides a checklist that is intended as a tool to allow users to assess the level of compliance of a quality management system to the requirements ISO 9001:2008. The questions in this checklist are of a generic nature and intended to be applicable to all organizations, not just those involved in the electronics industry. It can be useful while performing self-assessments of the organization or other internal audit procedures. It is not intended for use by a contracted third party registrar during a formal audit to the requirements of ISO 9001:2008. Committee(s): JC-14.4 |
||
FIELD-INDUCED CHARGED-DEVICE MODEL TEST METHOD FOR ELECTROSTATIC DISCHARGE WITHSTAND THRESHOLDS OF MICROELECTRONIC COMPONENTSStatus: Rescinded February 2020 |
JESD22-C101F | Oct 2013 |
The material in this test method has been superseded by JS-002-2018, published January 2019, which in turn has been superseded by JS-002-2022, published January 2023. |