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The Vibration, Variable Frequency Test Method is intended to determine the ability of component(s) to withstand moderate to severe vibration as a result of motion produced by transportation or filed operation of electrical equipment. This is a destructive test that is intended for component qualification. This is a minor editorial change to JESD22-B103B, June 2002 (Reaffirmed September 2010).

Committee(s): JC-14.1

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This publication provides an overview of solder void types, outlines current metrologies and test methods used for pre-SMPT solder void characterization and potential limitations, and prescribes sampling strategy for data collection, and tolerance guidelines for corrective measures.

Committee(s): JC-14.1

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This standard details the procedures for the measurement of characteristic bulk material properties of moisture diffusivity and water solubility in organic materials used in the packaging of electronic devices. These two material properties are important parameters for the effective reliability performance of plastic packaged surface mount devices after exposure to moisture and subjected to high temperature solder reflow.

Committee(s): JC-14.1

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This test method is offered as a standardized procedure to determine the total dose limit of DRAMs by measuring its refresh time tRef degradation after the device is irradiated with an X-Ray dose. This test method is applicable to any packaged device that contains a DRAM die or any embedded DRAM structure. Some indirect test methods such as wafer level characterization of total dose induced changes in leakage of access transistors are not described in this standard but are permissible as long as a good correlation is established.

Committee(s): JC-14.1

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This test method is offered as standardized procedure to determine the alpha particle Soft Error Rate (SER) sensitivity of solid state volatile memory arrays and bistable logic elements (e.g. flipflops) by measuring the error rate while the device is irradiated by a characterized, solid alph source.

Committee(s): JC-14, JC-14.1

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This standard applies to single-, dual- and triple-chamber temperature cycling in an air or other gaseous medium and covers component and solder interconnection testing.

Committee(s): JC-14.1

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A complete set of test methods can be obtained from Global Engineering Documents

Committee(s): JC-14.1

This standard establishes a defined method and conditions for performing a temperature-humidity life test with bias applied. The test is used to evaluate the reliability of nonhermetic packaged solid state devices in humid environments. It employs high temperature and humidity conditions to accelerate the penetration of moisture through external protective material or along interfaces between the external protective coating and conductors or other features that pass through it. This revision enhances the ability to perform this test on a device which cannot be biased to achieve very low power dissipation.

Committee(s): JC-14, JC-14.1

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This document describes design of test structures needed to assess the reliability of aluminum-copper, refractory metal barrier interconnect systems. This includes any metal interconnect system where a refractory metal barrier or other barrier material prevents the flow of aluminum and/or copper metal ions from moving between interconnect layers. This document is not intended to show design of test structures to assess aluminum or aluminum-copper alloy systems, without barriers to Al and Cu ion movement, nor for Cu only metal systems. Some total interconnect systems might not include barrier materials on all metal layers. The structures in this standard are designed for cases where a barrier material separates two Al or Al alloy metal layers. The purpose of this document is to describe the design of test structures needed to assess electromigration (EM) and stress-induced-void (SIV) reliability of AlCu barrier metal systems.

Committee(s): JC-14.2, JC-14.21

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This method provides procedures to calculate sample estimates and their confidence intervals for the electromigration model parameters of current density and temperature. The model parameter for current density is the exponent (n) to which the current density is raised in Black's equation. The parameter for temperature is the activation energy for the electromigration failure process.

Committee(s): JC-14.2

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This standard is to promote unification of content and format of semiconductor device failure-analysis reports so that reports from diverse laboratories may be easily read, compared, and understood by customers. Additional objectives are to ensure that reports can be easily ready by users, satisfactorily reproduced on copying machines, adequately transmitted by telefax, and conveniently stored in standard filing cabinets.

Committee(s): JC-14.4

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This test method provides optional conditions for preconditioning and soldering for the purpose of assessing the solderability of device package terminations. It provides procedures for dip & look solderability testing of through hole, axial and surface mount devices and a surface mount process simulation test for surface mount packages. The purpose of this test method is to provide a means of determining the solderability of device package terminations that are intended to be joined to another surface using lead (Pb) containing or Pb-free solder for the attachment.

Committee(s): JC-14.1

This document describes a test method only; acceptance criteria and qualification requirements are not defined. This test method applies to solder ball pull force/energy testing prior to end-use attachment. Solder balls are pulled individually using mechanical jaws; force, fracture energy and failure mode data are collected and analyzed. Other specialized solder ball pull methods using a heated thermode, gang pulling of multiple solder joints, etc., are outside the scope of this document. Both low and high speed testing are covered by this document. This is a minor editorial revision to JESD22-A115A.

Committee(s): JC-14, JC-14.1

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Salt atmosphere is a destructive, accelerated stress that simulates the effects of severe seacoast atmosphere on all exposed surfaces. Such stressing and post-stress testing determine the resistance of solid-state devices to corrosion and may be performed on commercial and industrial product in molded or hermetic packages.

Committee(s): JC-14, JC-14.1

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This test method is used to determine whether solid state devices can withstand the effect of the temperature shock to which they will be subjected during soldering of their leads in a solderwave process and/or solder fountain (rework/replacement) process. The heat is conducted through the leads into the device package from solder heat at the reverse side of the board.

Committee(s): JC-14.1

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This standard is intended to identify a core set of qualification tests that apply specifically for Power Amplifier Modules and their primary application in mobile devices such as cellular phones. This standard is intended to describe specific stresses and failure mechanisms that are specific to compound semiconductors and power amplifier modules. It is intended to establish more meaningful and efficient qualification testing.

Committee(s): JC-14.7

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This standard provides a checklist that is intended as a tool to allow users to assess the level of compliance of a quality management system to the requirements ISO 9001:2008. The questions in this checklist are of a generic nature and intended to be applicable to all organizations, not just those involved in the electronics industry. It can be useful while performing self-assessments of the organization or other internal audit procedures. It is not intended for use by a contracted third party registrar during a formal audit to the requirements of ISO 9001:2008.

Committee(s): JC-14.4

JESD35A was rescinded by the committee in June 2024 and has been superseded by JESD263.

The revised JESD35 is intended for use in the MOS Integrated Circuit manufacturing industry. It describes procedures developed for estimating the overall integrity and reliability of thin gate oxides. Three basic test procedures are described, the Voltage-Ramp (V-Ramp), the Current-Ramp (J-Ramp) and the new Constant Current (Bounded J-Ramp) test. Each test is designed for simplicity, speed and ease of use. The standard has been updated to include breakdown criteria that are more robust in detecting breakdown in thinner gate oxides that may not experience hard thermal breakdown.

Committee(s): JC-14.2

JESD92 was rescinded by the committee in June 2024 and has been superseded by JESD263.

This document defines a constant voltage stress test procedure for characterizing time-dependent dielectric breakdown or 'wear-out' of thin gate dielectrics used in integrated circuit technologies. The test is designed to obtain voltage and temperature acceleration parameters required to estimate oxide life at use conditions. The test procedure includes sophisticated techniques to detect breakdown in ultra-thin films that typically exhibit large tunneling currents and soft or noisy breakdown characteristics. This document includes an annex that discusses test structure design, methods to determine the oxide electric field in ultra-thin films, statistical models, extrapolation models, and example failure-rate calculations

Committee(s): JC-14, JC-14.2

This Test Method establishes a uniform method for performing solid state device package power cycling stress test.

Committee(s): JC-14, JC-14.1

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The standard provides a method for determining whether the external physical dimensions of the device are in accordance with the applicable procurement document. This revision includes a change in details to be specified by the procurement document.

Committee(s): JC-14.1

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Relevant JESD62 content has been consolidated into JESD50B, published October 2008 -Special Requirments for Maverick Product Elimination-.

Committee(s): JC-14.3

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This standard establishes methods for calculating failure rates in units of FITs by using data in varying degrees of detail such that results can be obtained from almost any data set. The objective is to provide a reference to the way failure rates are calculated.

Committee(s): JC-14.3

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This is an accelerated stress test method for determining sample estimates and their confidence limits of the median-time-to-failure, sigma, and early percentile of a log-Normal distribution, which are used to characterize the electromigration failure-time distribution of equivalent metal lines subjected to a constant current-density and temperature stress. Failure is defined as some pre-selected fractional increase in the resistance of the line under test. Analysis procedures are provided to analyze complete and singly, right-censored failure-time data. Sample calculations for complete and right-censored data are provided in Annex A. The analyses are not intended for the case when the failure distribution cannot be characterized by a single log-Normal distribution.

Committee(s): JC-14, JC-14.2

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This test is intended to determine the suitability of component parts for use in electronic equipment that may be subjected to moderately severe shocks as a result of suddenly applied forces or abrupt changes in motion produced by rough handling, transportation, or field operation. Shock of this type may disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification. It is normally applicable to cavity-type packages.

Committee(s): JC-14, JC-14.1

The predominant terminal finishes on electronic components have been Sn-Pb alloys. As the industry moves toward Pb-free components and assembly processes, the predominant terminal finish materials will be pure Sn and alloys of Sn, including Sn-Bi and Sn-Ag Pure Sn and Sn-based alloy electrodeposits and solder-dipped finishes may grow tin whiskers, which could electrically short across component terminals or break off the component and degrade the performance of electrical or mechanical parts.

Committee(s): JC-14, JC-14.1

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This test method provides two tests for determining the marking permanency of ink marked integrated circuits. A new non-destructive tape test method is introduced to quickly determine marking integrity. The test method also specifies a resistance to solvents method based upon MIL Std 883 Method 2015.

Committee(s): JC-14, JC-14.1

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The test is applicable for evaluation, screening, monitoring, and/or qualification of all solid state devices Low Temperature storage test is typically used to determine the effect of time and temperature, under storage conditions, for thermally activated failure mechanisms of solid state electronic devices, including nonvolatile memory devices (data retention failure mechanisms). During the test reduced temperatures (test conditions) are used without electrical stress applied. This test may be destructive, depending on Time, Temperature and Packaging (if any).

Committee(s): JC-14.1

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This standard describes an algorithm for the execution of the isothermal test, using computer-controlled instrumentation. The primary use of this test is for the monitoring of microelectronic metallization lines at wafer level (1) in process development, to evaluate process options, (2) in manufacturing, to monitor metallization reliability and (3) to monitor/evaluate process equipment. While it is developed as a fast WLR test, it can also be an effective tool for complementing the reliability data obtained through the standard package level electromigration test.

Committee(s): JC-14, JC-14.2

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