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This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that accurate comparisons can be made between different technologies. The measurements specified should be viewed as a starting pint in the characterization and benchmarking of the trasistor manufacturing process.

Committee(s): JC-14.2

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This test allows the user to evaluate the moisture resistance of nonhermetic packaged solid state devices. The Unbiased Autoclave Test is performed to evaluate the moisture resistance integrity of non-hermetic packaged solid state devices using moisture condensing or moisture saturated steam environments. It is a highly accelerated test that employs conditions of pressure, humidity and temperature under condensing conditions to accelerate moisture penetration through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors passing through it. This test is used to identify failure mechanisms internal to the package and is destructive.

Committee(s): JC-14.1

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This addendum provides data analysis examples useful in analyzing MOSFET n-channel hot-carrier-induced degradation data. This addendum to JESD28 (Hot carrier n-channel testing standard) suggests hot-carrier data analysis techniques.

Committee(s): JC-14.2

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JESD35-2 was rescinded by the committee in June 2024 and has been superseded by JESD263.

This addendum includes test criteria to supplement JESD35. JESD35 describes procedures developed for estimating the overall integrity of thin oxides in the MOS Integrated Circuit manufacturing industry. Two test procedures are included in JESD35: a Voltage-Ramp (V-Ramp) and a Current-Ramp (J-Ramp). As JESD35 became implemented into production facilities on a variety of test structures and oxide attributes, a need arose to clarify end point determination and point out some of the obstacles that could be overcome by careful characterization of the equipment and test structures.

Committee(s): JC-14.2

The Board Level Cyclic Bend Test Method is intended to evaluate and compare the performance of surface mount electronic components in an accelerated test environment for handheld electronic products applications. The purpose is to standardize the test methodology to provide a reproducible performance assessment of surface mounted components while duplicating the failure modes normally observed during product level test. This is not a component qualification test and is not meant to replace any product level test that may be needed to qualify a specific product and assembly.

Committee(s): JC-14, JC-14.1

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Committee(s): JC-14.4

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The purpose of this test is to measure the deviation of the terminals (leads or solder balls) from coplanarity at room temperature for surface-mount semiconductor devices. This test method is applicable for inspection and device characterization. If package warpage or coplanarity is to be characterized at reflow soldering temperatures, then JESD22-B112 should be used.

Committee(s): JC-14, JC-14.1

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This standard establishes procedures to notify customers of semiconductor product and process changes. Requirements include: documentation; procedures for classification, notification and customer response; content; and records. Documentation of a suppliers change notification system should set clear and understandable expectations for both the originators of the change and their end customers.

Committee(s): JC-14, JC-14.4

The Cycled Temperature-humidity-bias Life Test is performed for the purpose of evaluating the reliability of nonhermetic packaged solid state devices in humid environments. It employs conditions of temperature cycling, humidity, and bias that accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. The Cycled Temperature-Humidity-Bias Life Test is typically performed on cavity packages (e.g., MQUADs, lidded ceramic pin grid arrays, etc.) as an alternative to JESD22-A101 or JESD22-A110.

Committee(s): JC-14, JC-14.1

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This standard defines methods for calculating the early life failure rate of a product, using accelerated testing, whose failure rate is constant or decreasing over time. For technologies where there is adequate field failure data, alternative methods may be used to establish the early life failure rate. The purpose of this standard is to define a procedure for performing measurement and calculation of early life failure rates. Projections can be used to compare reliability performance with objectives, provide line feedback, support service cost estimates, and set product test and screen strategies to ensure that the ELFR meets customers' requirements.

Committee(s): JC-14, JC-14.3

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This stress test is intended to determine the ability of an EEPROM integrated circuit or an integrated circuit with an EEPROM module (such as a microprocessor) to sustain repeated data changes without failure (program/erase endurance) and to retain data for the expected life of the EEPROM (data retention). This Standard specifies the procedural requirements for performing valid endurance and retention tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or may be developed using knowledge-based methods as in JESD94.

Committee(s): JC-14, JC-14.1

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JESD22-A115 is a reference document; it is not a requirement per JESD47 (Stress Test Driven Qualification of Integrated Circuits). Machine Model (MM) as described in JESD22-A115 should not be used as a requirement for integrated circuit ESD qualification. Only human-body model (HBM) and charged-device model (CDM) are the necessary ESD qualification test methods as specified in JESD47.

Refer to JEP172: Discontinuing Use of the Machine Model for Device ESD Qualification for more information.

Committee(s): JC-14.1

The purpose of this test method is to identify the potential wave solder classification level of small plastic Surface Mount Devices (SMDs) that are sensitive to moisture-induced stress so that they can be properly packaged, stored, and handled to avoid subsequent mechanical damage during the assembly wave solder attachment and/or repair operations. This test method also provides a reliability preconditioning sequence for small SMDs that are wave soldered using full body immersion. This test method, may be used by users to determine what classification level should be used for initial board level reliability qualification.

Committee(s): JC-14, JC-14.1

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This method establishes requirements for application of Statistical Reliability Monitoring 'SRM' technology to monitor and improve the reliability of electronic components and subassemblies. The standard also describes the condition under with a monitor may be replaced or eliminated. Formerly known as EIA-659, that superseded JESD29-A (July 1996). Became JESD659 after revision, September 1999.

Committee(s): JC-14, JC-14.3

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This document applies to the reliability qualification of new or changed silicon devices, and their materials or manufacturing processes. Does not address qualification of product quality or functionality. Provides an alternative to traditional stress-driven qualification.

Committee(s): JC-14.2

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The Flip Chip Tensile Pull Test Method is performed to determine the fracture mode and strength of the solder bump interconnection between the flip chip die and the substrate. It should be used to assess the consistency of the chip join process. This test method is a destructive test.

Committee(s): JC-14.1

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This standard identifies the general requirements for Distributors that supply Commercial and Military products. This standard applies to all discrete semiconductors, integrated circuits and Hybrids, whether packaged or in wafer/die form, manufactured by all Manufacturers. The requirements defined within this document are only applicable to products for which ownership remains with the Distributor or Manufacturer.

Committee(s): JC-13, JC-14.4

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Committee(s): JC-14.1

The purpose of this test method is to evaluate the reliability of nonhermetic packaged solid state devices in humid environments. It employs severe conditions of temperature, humidity, and bias that accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors which pass through it. This is a minor editorial edit to JESD22A110E, July 2015 approved by the formulating committee.

Committee(s): JC-14.1

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This standard establishes the procedure for testing, evaluation and classification of devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined latch-up stress.

This standard has been adopted by the Defense Logistics Agency (DLA) as project 5962-1880.

Committee(s): JC-14, JC-14.1

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This standard describes an algorithm for the execution of the isothermal test, using computer-controlled instrumentation. The primary use of this test is for the monitoring of microelectronic metallization lines at wafer level (1) in process development, to evaluate process options, (2) in manufacturing, to monitor metallization reliability and (3) to monitor/evaluate process equipment. While it is developed as a fast WLR test, it can also be an effective tool for complementing the reliability data obtained through the standard package level electromigration test.

Committee(s): JC-14, JC-14.2

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The test is applicable for evaluation, screening, monitoring, and/or qualification of all solid state devices Low Temperature storage test is typically used to determine the effect of time and temperature, under storage conditions, for thermally activated failure mechanisms of solid state electronic devices, including nonvolatile memory devices (data retention failure mechanisms). During the test reduced temperatures (test conditions) are used without electrical stress applied. This test may be destructive, depending on Time, Temperature and Packaging (if any).

Committee(s): JC-14.1

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This test method provides two tests for determining the marking permanency of ink marked integrated circuits. A new non-destructive tape test method is introduced to quickly determine marking integrity. The test method also specifies a resistance to solvents method based upon MIL Std 883 Method 2015.

Committee(s): JC-14, JC-14.1

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The predominant terminal finishes on electronic components have been Sn-Pb alloys. As the industry moves toward Pb-free components and assembly processes, the predominant terminal finish materials will be pure Sn and alloys of Sn, including Sn-Bi and Sn-Ag Pure Sn and Sn-based alloy electrodeposits and solder-dipped finishes may grow tin whiskers, which could electrically short across component terminals or break off the component and degrade the performance of electrical or mechanical parts.

Committee(s): JC-14, JC-14.1

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This test is intended to determine the suitability of component parts for use in electronic equipment that may be subjected to moderately severe shocks as a result of suddenly applied forces or abrupt changes in motion produced by rough handling, transportation, or field operation. Shock of this type may disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification. It is normally applicable to cavity-type packages.

Committee(s): JC-14, JC-14.1

This is an accelerated stress test method for determining sample estimates and their confidence limits of the median-time-to-failure, sigma, and early percentile of a log-Normal distribution, which are used to characterize the electromigration failure-time distribution of equivalent metal lines subjected to a constant current-density and temperature stress. Failure is defined as some pre-selected fractional increase in the resistance of the line under test. Analysis procedures are provided to analyze complete and singly, right-censored failure-time data. Sample calculations for complete and right-censored data are provided in Annex A. The analyses are not intended for the case when the failure distribution cannot be characterized by a single log-Normal distribution.

Committee(s): JC-14, JC-14.2

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This standard establishes methods for calculating failure rates in units of FITs by using data in varying degrees of detail such that results can be obtained from almost any data set. The objective is to provide a reference to the way failure rates are calculated.

Committee(s): JC-14.3

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Relevant JESD62 content has been consolidated into JESD50B, published October 2008 -Special Requirments for Maverick Product Elimination-.

Committee(s): JC-14.3

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The standard provides a method for determining whether the external physical dimensions of the device are in accordance with the applicable procurement document. This revision includes a change in details to be specified by the procurement document.

Committee(s): JC-14.1

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