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Title	Document #	Date
A PROCEDURE FOR MEASURING N-CHANNEL MOSFET HOT-CARRIER-INDUCED DEGRADATION UNDER DC STRESS:	JESD28-A	Dec 2001
This document describes an accelerated test for measuring the hot-carrier-induced degradation of a single n-channel MOSFET using dc bias. The purpose of this document is to specify a minimum set of measurements so that valid comparisons can be made between different technologies, IC processes, and process variations in a simple, consistent and controlled way. The measurements specified should be viewed as a starting point in the characterization and benchmarking of the transistor manufacturing process. Committee(s): JC-14.2 Free download. Registration or login required.
A PROCEDURE FOR MEASURING P-CHANNEL MOSFET HOT-CARRIER-INDUCED DEGRADATION AT MAXIMUM GATE CURRENT UNDER DC STRESS:	JESD60A	Sep 2004
This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that accurate comparisons can be made between different technologies. The measurements specified should be viewed as a starting pint in the characterization and benchmarking of the trasistor manufacturing process. Committee(s): JC-14.2 Free download. Registration or login required.
A PROCEDURE FOR MEASURING P-CHANNEL MOSFET NEGATIVE BIAS TEMPERATURE INSTABILITIES Status: Rescinded September 2021 (JC-14.2-21-183)	JESD90	Nov 2004
This document hasbeen replaced by JESD241, September 2021. Committee(s): JC-14, JC-14.2
ACCELERATED MOISTURE RESISTANCE - UNBIASED AUTOCLAVE Status: Reaffirmed January 2021	JESD22-A102E	Jul 2015
This test allows the user to evaluate the moisture resistance of nonhermetic packaged solid state devices. The Unbiased Autoclave Test is performed to evaluate the moisture resistance integrity of non-hermetic packaged solid state devices using moisture condensing or moisture saturated steam environments. It is a highly accelerated test that employs conditions of pressure, humidity and temperature under condensing conditions to accelerate moisture penetration through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors passing through it. This test is used to identify failure mechanisms internal to the package and is destructive. Committee(s): JC-14.1 Free download. Registration or login required.
ACCELERATED MOISTURE RESISTANCE - UNBIASED HAST	JESD22-A118B.01	May 2021
The Unbiased HAST is performed for the purpose of evaluating the reliability of nonhermetic packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under noncondensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. Bias is not applied in this test to ensure the failure mechanisms potentially overshadowed by bias can be uncovered (e.g., galvanic corrosion). This test is used to identify failure mechanisms internal to the package and is destructive. Committee(s): JC-14.1 Free download. Registration or login required.
Addendum No. 1 to JESD28, N-CHANNEL MOSFET HOT CARRIER DATA ANALYSIS	JESD28-1	Sep 2001
This addendum provides data analysis examples useful in analyzing MOSFET n-channel hot-carrier-induced degradation data. This addendum to JESD28 (Hot carrier n-channel testing standard) suggests hot-carrier data analysis techniques. Committee(s): JC-14.2 Free download. Registration or login required.
ADDENDUM No. 1 to JESD35, GENERAL GUIDELINES FOR DESIGNING TEST STRUCTURES FOR THE WAFER-LEVEL TESTING OF THIN DIELECTRICS Status: Rescinded	JESD35-1	Sep 1995
JESD35-1 was rescinded by the committee in June 2024 and has been superseded by JESD263. This addendum expands the usefulness of the Standard 35 (JESD35) by detailing the various sources of measurement error that could effect the test results obtained by the ramped tests described in JESD35. Each source of error is described and its implications on test structure design is noted. This addendum can be used as a guide when designing test structures for the qualification and characterization of thin oxide reliability, specifically, by implementing accelerated voltage or current ramp tests. Committee(s): JC-14.2
ADDENDUM No. 2 to JESD35 - TEST CRITERIA FOR THE WAFER-LEVEL TESTING OF THIN DIELECTRICS: Status: Rescinded	JESD35-2	Feb 1996
JESD35-2 was rescinded by the committee in June 2024 and has been superseded by JESD263. This addendum includes test criteria to supplement JESD35. JESD35 describes procedures developed for estimating the overall integrity of thin oxides in the MOS Integrated Circuit manufacturing industry. Two test procedures are included in JESD35: a Voltage-Ramp (V-Ramp) and a Current-Ramp (J-Ramp). As JESD35 became implemented into production facilities on a variety of test structures and oxide attributes, a need arose to clarify end point determination and point out some of the obstacles that could be overcome by careful characterization of the equipment and test structures. Committee(s): JC-14.2
APPLICATION SPECIFIC QUALIFICATION USING KNOWLEDGE BASED TEST METHODOLOGY Status: Reaffirmed January 2021	JESD94B	Oct 2015
The method described in this document applies to all application specific reliability testing for solid state components with known failure mechanisms where the test duration and conditions vary based on application variables. This document does not cover reliability tests that are characterization based or essentially go / no-go type tests, for example, ESD, latch-up, or electrical over stress. Also, it does not attempt to cover every failure mechanism or test environment, but does provide a methodology that can be extended to other failure mechanisms and test environments. Committee(s): JC-14.3 Free download. Registration or login required.
BOARD LEVEL CYCLIC BEND TEST METHOD FOR INTERCONNECT RELIABILITY CHARACTERIZATION OF SMT ICs FOR HANDHELD ELECTRONIC PRODUCTS	JESD22-B113B	Aug 2018
The Board Level Cyclic Bend Test Method is intended to evaluate and compare the performance of surface mount electronic components in an accelerated test environment for handheld electronic products applications. The purpose is to standardize the test methodology to provide a reproducible performance assessment of surface mounted components while duplicating the failure modes normally observed during product level test. This is not a component qualification test and is not meant to replace any product level test that may be needed to qualify a specific product and assembly. Committee(s): JC-14, JC-14.1 Free download. Registration or login required.
Board Level Drop Test Method of Components for Handheld Electronic Products	JESD22-B111A.01	Jun 2024
This Test Method standardizes the test board and test methodology to provide a reproducible assessment of the drop test performance of surface mounted components. Committee(s): JC-14, JC-14.1 Free download. Registration or login required.
COMPONENT PROBLEM ANALYSIS AND CORRECTIVE ACTION REQUIREMENTS - SUPERSEDED BY EIA-671, November 1996. Status: Superseded	JESD43	Nov 1996
Committee(s): JC-14.4 Free download. Registration or login required.
CONSTANT-TEMPERATURE AGING METHOD TO CHARACTERIZE COPPER INTERCONNECT METALLIZATIONS FOR STRESS-INDUCED VOIDING	JESD214.01	Aug 2017
This document describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method may be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time. Committee(s): JC-14.2 Free download. Registration or login required.
COPLANARITY TEST FOR SURFACE-MOUNT SEMICONDUCTOR DEVICES Status: Reaffirmed February 2023	JESD22-B108B	Sep 2010
The purpose of this test is to measure the deviation of the terminals (leads or solder balls) from coplanarity at room temperature for surface-mount semiconductor devices. This test method is applicable for inspection and device characterization. If package warpage or coplanarity is to be characterized at reflow soldering temperatures, then JESD22-B112 should be used. Committee(s): JC-14, JC-14.1 Free download. Registration or login required.
Customer Notification for Environmental Compliance Declaration Deviations	JESD262	Nov 2022
This standard is invoked when a supplier becomes aware that a product’s environmental compliance declaration they provided or made available to their customers had an error that might cause a customer to draw an incorrect conclusion about the compliance of the product to legal requirements. Committee(s): JC-14.4 Free download. Registration or login required.
CUSTOMER NOTIFICATION OF PRODUCT/PROCESS CHANGES BY SOLID-STATE SUPPLIERS Status: SupersededBy J-STD-046, July 2016	JESD46D	Dec 2011
This standard establishes procedures to notify customers of semiconductor product and process changes. Requirements include: documentation; procedures for classification, notification and customer response; content; and records. Documentation of a suppliers change notification system should set clear and understandable expectations for both the originators of the change and their end customers. Committee(s): JC-14, JC-14.4
CUSTOMER NOTIFICATION PROCESS FOR DISASTERS	JESD246A	Jan 2020
This standard establishes the requirements for timely notification to affected customers after a disaster has occurred at a supplier’s facility that will affect the committed delivery of product. This standard puts specific emphasis on notification, timing, and notification content which includes risk exposure, impact analysis, and recovery plans. This standard is applicable to suppliers of, and affected customers for, solid-state products and the constituent components used within. Committee(s): JC-14.4 Free download. Registration or login required.
CYCLED TEMPERATURE HUMIDITY-BIAS WITH SURFACE CONDENSATION LIFE TEST	JESD22-A100E	Nov 2020
The Cycled Temperature-humidity-bias Life Test is performed for the purpose of evaluating the reliability of nonhermetic packaged solid state devices in humid environments. It employs conditions of temperature cycling, humidity, and bias that accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. The Cycled Temperature-Humidity-Bias Life Test is typically performed on cavity packages (e.g., MQUADs, lidded ceramic pin grid arrays, etc.) as an alternative to JESD22-A101 or JESD22-A110. Committee(s): JC-14, JC-14.1 Free download. Registration or login required.
DEVICE QUALITY PROBLEM ANALYSIS AND CORRECTIVE ACTION RESOLUTION METHODOLOGY	JESD671D	Oct 2018
This standard addresses any Customer-initiated device problem analysis/corrective action request and Supplier/Authorized Distributor-identified device nonconformance to specification which may impact the Customer. This standard establishes a common set of Customer, Authorized Distributor and Supplier expectations and requirements that will help to facilitate successful problem analysis and corrective action of device problems, including administrative quality problems, which may affect the Customer. Formerly known as EIA-671 (November 1996). Became JESD671-A after revision, December 1999. Committee(s): JC-14.4 Free download. Registration or login required.
EARLY LIFE FAILURE RATE CALCULATION PROCEDURE FOR SEMICONDUCTOR COMPONENTS: Status: Reaffirmed January 2014, September 2019	JESD74A	Feb 2007
This standard defines methods for calculating the early life failure rate of a product, using accelerated testing, whose failure rate is constant or decreasing over time. For technologies where there is adequate field failure data, alternative methods may be used to establish the early life failure rate. The purpose of this standard is to define a procedure for performing measurement and calculation of early life failure rates. Projections can be used to compare reliability performance with objectives, provide line feedback, support service cost estimates, and set product test and screen strategies to ensure that the ELFR meets customers' requirements. Committee(s): JC-14, JC-14.3 Free download. Registration or login required.

Standards & Documents Search

A PROCEDURE FOR MEASURING N-CHANNEL MOSFET HOT-CARRIER-INDUCED DEGRADATION UNDER DC STRESS:

A PROCEDURE FOR MEASURING P-CHANNEL MOSFET HOT-CARRIER-INDUCED DEGRADATION AT MAXIMUM GATE CURRENT UNDER DC STRESS:

A PROCEDURE FOR MEASURING P-CHANNEL MOSFET NEGATIVE BIAS TEMPERATURE INSTABILITIES

ACCELERATED MOISTURE RESISTANCE - UNBIASED AUTOCLAVE

ACCELERATED MOISTURE RESISTANCE - UNBIASED HAST

Addendum No. 1 to JESD28, N-CHANNEL MOSFET HOT CARRIER DATA ANALYSIS

ADDENDUM No. 1 to JESD35, GENERAL GUIDELINES FOR DESIGNING TEST STRUCTURES FOR THE WAFER-LEVEL TESTING OF THIN DIELECTRICS

ADDENDUM No. 2 to JESD35 - TEST CRITERIA FOR THE WAFER-LEVEL TESTING OF THIN DIELECTRICS:

APPLICATION SPECIFIC QUALIFICATION USING KNOWLEDGE BASED TEST METHODOLOGY

BOARD LEVEL CYCLIC BEND TEST METHOD FOR INTERCONNECT RELIABILITY CHARACTERIZATION OF SMT ICs FOR HANDHELD ELECTRONIC PRODUCTS

Board Level Drop Test Method of Components for Handheld Electronic Products

COMPONENT PROBLEM ANALYSIS AND CORRECTIVE ACTION REQUIREMENTS - SUPERSEDED BY EIA-671, November 1996.

CONSTANT-TEMPERATURE AGING METHOD TO CHARACTERIZE COPPER INTERCONNECT METALLIZATIONS FOR STRESS-INDUCED VOIDING

COPLANARITY TEST FOR SURFACE-MOUNT SEMICONDUCTOR DEVICES

Customer Notification for Environmental Compliance Declaration Deviations

CUSTOMER NOTIFICATION OF PRODUCT/PROCESS CHANGES BY SOLID-STATE SUPPLIERS

CUSTOMER NOTIFICATION PROCESS FOR DISASTERS

CYCLED TEMPERATURE HUMIDITY-BIAS WITH SURFACE CONDENSATION LIFE TEST

DEVICE QUALITY PROBLEM ANALYSIS AND CORRECTIVE ACTION RESOLUTION METHODOLOGY

EARLY LIFE FAILURE RATE CALCULATION PROCEDURE FOR SEMICONDUCTOR COMPONENTS:

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