Global Standards for the Microelectronics Industry
Standards & Documents Search
Title | Document # | Date |
---|---|---|
STANDARD TEST PROCEDURE FOR NOISE MARGIN MEASUREMENTS FOR SEMICONDUCTOR LOGIC GATING MICROCIRCUITSStatus: Rescinded, October 2008 |
JESD390A | Feb 1981 |
Reaffirmed September 2003 Free download. Registration or login required. |
||
TEST METHODS AND ACCEPTANCE PROCEDURES FOR THE EVALUATION OF POLYMERIC MATERIALS:Status: Reaffirmed May 2023 |
JESD72A | Mar 2018 |
This Test Method covers the minimum requirements that should be in effect for the evaluation and acceptance of polymeric materials for use in industrial, military, space, and other special-condition products which may require capabilities beyond standard commercial microelectronics applications. It is not the intent of this Publication to specify a material, but to evaluate the material to assure that the quality and reliability of the microelectronic devices are not compromised. This document replaces JEP105, JEP107 and JEP112. Committee(s): JC-13.5 Free download. Registration or login required. |
||
TEST PROCEDURE FOR THE MANAGEMENT OF SINGLE-EVENT EFFECTS IN SEMICONDUCTOR DEVICES FROM HEAVY ION IRRADIATION: |
JESD57A | Nov 2017 |
This test method defines requirements and procedures for ground simulation and single event effects (SEE) and implementation of the method in testing integrated circuits. This standard is valid when using a cyclotron or Van de Graaff accelerator. Microcircuits under test must be delidded. The ions used at the facilities have an atomic number Z > 2. It does not apply to SEE testing that uses protons, neutrons, or other lighter particles. This standard is designed to eliminate any misunderstanding between users of the method and test facilities, to minimize delays, and to promote standardization of testing and test data. Committee(s): JC-13.4 Free download. Registration or login required. |
||
TEST STANDARD FOR THE MEASUREMENT OF PROTON RADIATION SINGLE EVENT EFFECTS IN ELECTRONIC DEVICES |
JESD234 | Oct 2013 |
This test standard defines the requirements and procedures for 40 to 500 MeV proton irradiation of electronic devices for Single Event Effects (SEE), and reporting the results. Protons are capable of causing SEE by both direct and indirect ionization, however, in this energy range, indirect ionization will be the dominant cause of SEE [1-3]. Indirect ionization is produced from secondary particles of proton/material nuclear reactions, where the material is Si or any other element present in the semiconductor. Direct proton ionization is thought to be a minor source of SEE, at these energies. This energy range is also selected to coincide with the commonly used proton facilities, and result in the fewest energy dependent issues during test. Free download. Registration or login required. |
Pages
- « first
- ‹ previous
- …
- 2
- 3
- 4