Global Standards for the Microelectronics Industry
Standards & Documents Search
Title |
Document # | Date |
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TEST STANDARD FOR THE MEASUREMENT OF PROTON RADIATION SINGLE EVENT EFFECTS IN ELECTRONIC DEVICES |
JESD234 | Oct 2013 |
This test standard defines the requirements and procedures for 40 to 500 MeV proton irradiation of electronic devices for Single Event Effects (SEE), and reporting the results. Protons are capable of causing SEE by both direct and indirect ionization, however, in this energy range, indirect ionization will be the dominant cause of SEE [1-3]. Indirect ionization is produced from secondary particles of proton/material nuclear reactions, where the material is Si or any other element present in the semiconductor. Direct proton ionization is thought to be a minor source of SEE, at these energies. This energy range is also selected to coincide with the commonly used proton facilities, and result in the fewest energy dependent issues during test. Free download. Registration or login required. |
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TEST PROCEDURE FOR THE MANAGEMENT OF SINGLE-EVENT EFFECTS IN SEMICONDUCTOR DEVICES FROM HEAVY ION IRRADIATION: |
JESD57A | Nov 2017 |
This test method defines requirements and procedures for ground simulation and single event effects (SEE) and implementation of the method in testing integrated circuits. This standard is valid when using a cyclotron or Van de Graaff accelerator. Microcircuits under test must be delidded. The ions used at the facilities have an atomic number Z > 2. It does not apply to SEE testing that uses protons, neutrons, or other lighter particles. This standard is designed to eliminate any misunderstanding between users of the method and test facilities, to minimize delays, and to promote standardization of testing and test data. Committee(s): JC-13.4 Free download. Registration or login required. |
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TEST METHODS AND ACCEPTANCE PROCEDURES FOR THE EVALUATION OF POLYMERIC MATERIALS:Status: Reaffirmed May 2023 |
JESD72A | Mar 2018 |
This Test Method covers the minimum requirements that should be in effect for the evaluation and acceptance of polymeric materials for use in industrial, military, space, and other special-condition products which may require capabilities beyond standard commercial microelectronics applications. It is not the intent of this Publication to specify a material, but to evaluate the material to assure that the quality and reliability of the microelectronic devices are not compromised. This document replaces JEP105, JEP107 and JEP112. Committee(s): JC-13.5 Free download. Registration or login required. |
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STANDARD TEST PROCEDURE FOR NOISE MARGIN MEASUREMENTS FOR SEMICONDUCTOR LOGIC GATING MICROCIRCUITSStatus: Rescinded, October 2008 |
JESD390A | Feb 1981 |
Reaffirmed September 2003 Free download. Registration or login required. |
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STANDARD TEST METHOD UTILIZING X-RAY FLUORESCENCE (XRF) FOR ANALYZING COMPONENT FINISHES AND SOLDER ALLOYS TO DETERMINE TIN (Sn) - LEAD (Pb) CONTENTReaffirmed June 2023 |
JESD213A | Apr 2017 |
This document is intended to be used by Original Component Manufacturers who deliver electronic components and Original Equipment Manufacturers who are the platform system integrators. It is intended to be applied prior to delivery by the OCMs and may be used by OEM system engineers and procuring activities as well as U.S Government Department of Defense system engineers, procuring activities and repair centers. This Standard establishes the instrumentation, techniques, criteria, and methods to be utilized to quantify the amount of Lead (Pb) in Tin-Lead (Sn/Pb) alloys and electroplated finishes containing at least 3 weight percent (wt%) Lead (Pb) using X-Ray Fluorescence (XRF) equipment. Reaffirmed June 2023
Committee(s): JC-13 Free download. Registration or login required. |
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REQUIREMENTS FOR HANDLING ELECTROSTATIC-DISCHARGE-SENSITIVE (ESDS) DEVICES - SUPERSEDED BY EIA-625, November 1994.Status: Superseded |
JESD42 | Mar 1994 |
Committee(s): JC-13 Free download. Registration or login required. |
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Requirements for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices |
JESD625C.01 | Mar 2024 |
This standard applies to devices susceptible to damage by electrostatic discharge greater than 100 volts human body model (HBM) and 200 volts charged device model (CDM). Free download. Registration or login required. |
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PROCUREMENT STANDARD FOR KNOWN GOOD DIE (KGD) |
JESD49B.01 | Oct 2023 |
This standard facilitates the procurement and use of semiconductor die products provided in bare or bumped die form, and provides requirements and guidance to die suppliers as to the levels of as-delivered performance, quality and reliability expected. It also reflects the special needs of die product customers in terms of design and application data. Committee(s): JC-13 Free download. Registration or login required. |
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PROCUREMENT QUALITY OF SOLID STATE COMPONENTS BY GOVERNMENT CONTRACTORS - SUPERSEDED BY EIA-623, July 1994Status: Superseded |
JESD40 | Jul 1994 |
Committee(s): JC-13 Free download. Registration or login required. |
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MEASUREMENT AND REPORTING OF ALPHA PARTICLE AND TERRESTRIAL COSMIC RAY INDUCED SOFT ERRORS IN SEMICONDUCTOR DEVICES |
JESD89B | Sep 2021 |
This specification defines the standard requirements and procedures for terrestrial soft-error-rate (SER) testing of integrated circuits and reporting of results. Both real-time (unaccelerated) and accelerated testing procedures are described. At terrestrial, Earth-based altitudes, the predominant sources of radiation include both cosmic-ray radiation and alpha-particle radiation from radioisotopic impurities in the package and chip materials. An overall assessment of a deviceís SER is complete, only when an unaccelerated test is done, or accelerated SER data for the alpha-particle component and the cosmic-radiation component has been obtained. Free download. Registration or login required. |
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