Global Standards for the Microelectronics Industry
Standards & Documents Search
Title | Document # | Date |
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RANGES AND CONDITIONS FOR SPECIFYING BETA FOR LOW POWER, AUDIO FREQUENCY TRANSISTORS FOR ENTERTAINMENT SERVICE:Status: ReaffirmedApril 1981, April 1999, March 2009 |
JESD302 | Jan 1965 |
This standard establishes the preferred rating ranges and conditions for specifying beta for low power, audio frequency transistors intended for entertainment service. Formerly known as RS-302 and EIA-302. Committee(s): JC-25 Free download. Registration or login required. |
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MEASUREMENT OF SMALL SIGNAL HF, VHF, AND UHF POWER GAIN OF TRANSISTORSStatus: Reaffirmed April 1981, April 1999, March 2009 |
JESD306 | May 1965 |
This standard provides a method of measurement for small-signal HF, VHF, and UHF power gain of low power transistors. Formerly known as RS-306 and/or EIA-306. Committee(s): JC-25 Free download. Registration or login required. |
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THERMAL RESISTANCE MEASUREMENTS OF CONDUCTION COOLED POWER TRANSISTORS:Status: ReaffirmedApril 1981, April 2001 |
JESD313-B | Oct 1975 |
This standard provides a test method for measuring thermal resistance for conduction cooled power transistors. Committee(s): JC-25 Free download. Registration or login required. |
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STANDARD FOR THE MEASUREMENT OF CREStatus: Reaffirmed April 1981, April 1999, March 2009 |
JESD340 | Nov 1967 |
This standard offers an easily measured parameter which is one of the significant characteristics in determining the stability of a transistor intended for small-signal operation. The measurement technique allows rapid testing. Its correlation to AC stability will help to establish the interchangeability of a device. Formerly known as RS-340 and/or EIA-340. Committee(s): JC-25 Free download. Registration or login required. |
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THE MEASUREMENT OF TRANSISTOR NOISE FIGURE AT FREQUENCIES UP TO 20 kHz BY SINUSOIDAL SIGNAL-GENERATOR METHODStatus: Reaffirmed April 1981, April 1999, March 2009 |
JESD353 | Apr 1968 |
This noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution. Formerly known as RS-353 and/or EIA-353 Committee(s): JC-25 Free download. Registration or login required. |
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THE MEASUREMENT OF TRANSISTOR EQUIVALENT NOISE VOLTAGE AND EQUIVALENT NOISE CURRENT AT FREQUENCIES OF UP TO 20 kHzStatus: Reaffirmed April 1981, April 1999, March 2009 |
JESD354 | Apr 1968 |
This standard provides a method for determining values, for device registration purposes, for transistor equivalent noise voltage and equivalent noise current at frequencies up to 20 kHz. This method is applicable to transistors whose noise has a Gaussian, flat (white) or I/f power distribution. Formerly known as RS-354 and/or EIA-354 Committee(s): JC-25 Free download. Registration or login required. |
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DESIGNATION SYSTEM FOR SEMICONDUCTOR DEVICES:Status: ReaffirmedNovember 1995, November 1999, May 2003 |
JESD370B | Feb 1982 |
This standard includes several new items and has been completely rewritten from the original EIA-370. The first is a new letter symbol C so that a JEDEC type designation may now be 2C1234, to indicate that a chip is being designated that if it were properly mounted on the package registered for the 2N1234, it would display characteristics similar to those of the 2N1234. The second major addition is the method for assigning the first numeric symbol for type designations of optoelectronic devices. ANSI/EIA-370-B-1992. Committee(s): JC-10 Free download. Registration or login required. |
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THE MEASUREMENT OF SMALL-SIGNAL VHF-UHF TRANSISTOR SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO:Status: ReaffirmedApril 1981, April 1999, March 2009 |
JESD371 | Feb 1970 |
This standard describes the method to be used for the measurement of small-signal VHF-UHF transistor short-circuit forward current transfer ratio, in preparing data sheets for JEDEC registration of low power transistors. Formerly known as RS-371 and/or EIA-371. Committee(s): JC-25 Free download. Registration or login required. |
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THE MEASUREMENT OF SMALL-SIGNAL VHF-UHF TRANSISTOR ADMITTANCE PARAMETERS:Status: ReaffirmedApril 1981, April 1999, March 2009 |
JESD372 | May 1970 |
This standard describes the method to be used for the measurement of small-signal VHF-UHF transistor admittance parameters, in preparing data sheets for JEDEC registration of low power transistors. Formerly known as RS-372 and/or EIA-372 Committee(s): JC-25 Free download. Registration or login required. |
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METHOD OF DIODE Q MEASUREMENTStatus: Reaffirmed April 1999, April 2002 |
JESD381-A | Nov 1981 |
This standard was updated and revised for the purpose of clarifying the method used to measure Q of a Voltage-Variable-Capacitance Diode in the low VHF range using an RF admittance bridge. Originally published November 1981. Approved as ANSI/EIA-381-A-1992, July 1992. Became JESD381-A after ANSI expiration July 2002. Committee(s): JC-22.4 Free download. Registration or login required. |
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TWO-RESISTOR COMPACT THERMAL MODEL GUIDELINE |
JESD15-3 | Jul 2008 |
This document specifies the definition and construction of a two-resistor compact thermal model (CTM) from the JEDEC junction-to-case and junction-to-board thermal metrics. The guidance provided in this document only applies to thermal metrics defined in JEDEC standards JESD51-8 and JESD51-12. The scope of this document is limited to single-die packages that can be effectively represented by a single junction temperature. Committee(s): JC-15 Free download. Registration or login required. |
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RADIO FRONT END - BASEBAND DIGITAL PARALLEL (RBDP) INTERFACE |
JESD207.01 | Mar 2023 |
Terminology update. This document establishes an interface standard for the data path and control plane interface functions for an RFIC component and/or a BBIC component. Committee(s): JC-61 Free download. Registration or login required. |
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MEASUREMENT OF SMALL VALUES OF TRANSISTOR CAPACITANCE:Status: ReaffirmedApril 1981, April 1999, March 2009 |
JESD398 | Jul 1972 |
This standard contains a three-terminal procedure for capacitance measurement with due precautions for shielding of extraneous effects due to terminal leads and metal enclosures. Formerly known as RS-398 and/or EIA-398 Committee(s): JC-25 Free download. Registration or login required. |
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STANDARD FOR THE MEASUREMENT OF SMALL-SIGNAL TRANSISTOR SCATTERING PARAMETERS:Status: ReaffirmedApril 1999, March 2009 |
JESD435 | Apr 1976 |
This standard specifies the standard for the measurement of small-signal transistor scattering parameters. Formerly known as RS-435 and/or EIA-435 Committee(s): JC-25 Free download. Registration or login required. |
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THERMAL RESISTANCE TEST METHOD FOR SIGNAL AND REGULATOR DIODES (FORWARD VOLTAGE, SWITCHING METHOD):Status: ReaffirmedApril 1999, April 2002 |
JESD531 | Jul 1986 |
This standard describes a test method for measuring the thermal resistance of signal and regulator diodes. The need for modification of this test method arose out of the limited description that existed earlier for both signal and regulator diode applications in testing for thermal resistance. Previously published as ID-13. ANSI/EIA-531-1986 (July) expired June 1996. Became JESD531 after reaffirmation April 2002. Committee(s): JC-22.4 Free download. Registration or login required. |
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TERMS, DEFINITIONS, AND LETTER SYMBOLS FOR MICROCOMPUTERS, MICROPROCESSORS, AND MEMORY INTEGRATED CIRCUITS: |
JESD100B.01 | Dec 2002 |
A revised reference for technical writers and educators, manufacturers, buyers and users of microprocessors, microcomputers, mircocontrollers, memory ICs, and other complex devices. The terms and their definitions in this standard have been updated and are in general agreement with the latest publications of the IEEE and the IEC. The companion standard for other integrated circuits is JESD99A. Also included is a system for generating symbols for time intervals found in complex sequential circuits, including memories. JESD100B.01 is the first minor revision of JESD100-B, December 1999. Annex A briefly shows entries that have changed. Committee(s): JC-10 Free download. Registration or login required. |
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LEADLESS CHIP CARRIER PINOUTS STANDARDIZED FOR LINEARS: |
JESD1 | Apr 1982 |
This standard shows how to convert existing DIP pinouts for op-amps, comparators, and D/A converters, to chip carrier packages. Committee(s): JC-41 Free download. Registration or login required. |
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CHIP CARRIER PINOUTS STANDARDIZED FOR CMOS 4000, HC AND HCT SERIES OF LOGIC CIRCUITS: |
JESD11 | Dec 1984 |
This standard indicates the procedures used to convert existing DIP and flat packages for digital parts (SSI & MSI) to chip carrier packages. Committee(s): JC-40.2 Free download. Registration or login required. |
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SEMICUSTOM INTEGRATED CIRCUITS (FORMERLY PUBLISHED AS STANDARD FOR GATE ARRAY BENCHMARK SET): |
JESD12 | Jun 1985 |
The purpose of these benchmarks is to provide a common set of high level functions which serve as vehicles for comparing the performance of gate arrays implemented in any technology using any internal structure. These benchmarks effectively provide an unbiased measure of gate array vendors' ability to implement a desired complex function on a particular gate array at a known level of performance. Committee(s): JC-44 Free download. Registration or login required. |
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ADDENDUM No. 1 to JESD12 - TERMS AND DEFINITIONS FOR GATE ARRAYS AND CELL-BASED INTEGRATED CIRCUITS: |
JESD12-1B | Aug 1993 |
The purpose of this standard is to promote the uniform use of abbreviations, terms, and definitions throughout the semiconductor industry. It is a useful guide for users, manufactures, educators, technical writers, and others interested in the characterization, nomenclature, and classification of semicustom integrated circuits. Committee(s): JC-44 Free download. Registration or login required. |