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Title	Document #	Date
GUIDELINE FOR EVALUATING BIAS TEMPERATURE INSTABILITY OF SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR DEVICES FOR POWER ELECTRONIC CONVERSION	JEP184	Mar 2021
The scope of this document covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS devices as well. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Committee(s): JC-70.2 Free download. Registration or login required.
DYNAMIC ON-RESISTANCE TEST METHOD GUIDELINES FOR GaN HEMT BASED POWER CONVERSION DEVICES, VERSION 1.0 Status: Reaffirmed November 2024	JEP173	Jan 2019
This document is intended for use in the GaN power semiconductor and related power electronic industries, and provides guidelines for measuring the dynamic ON-resistance of GaN power devices. Reaffirmed: November 2024 A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Committee(s): JC-70, JC-70.1 Free download. Registration or login required.
Guideline for Evaluating Bipolar Degradation of Silicon Carbide Power Devices	JEP197	Nov 2023
This publication provides guidance to SiC product suppliers and related power electronic industries in their evaluation of bipolar degradation mechanism in SiC power devices. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Committee(s): JC-70, JC-70.2 Free download. Registration or login required.
Guideline for Evaluating dv/dt Robustness of SiC Power Devices, Version 1.0	JEP190	Aug 2022
This document provides stress procedures, general failure criteria and documentation guidelines such that the dv/dt robustness can be demonstrated, evaluated and documented. This document gives examples for test setups which can be used and the corresponding test conditions. Additionally, criteria are explained under which device manufacturers can select an appropriate test setup. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Committee(s): JC-70.2 Free download. Registration or login required.
Guideline for Evaluating Gate Switching Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion	JEP195	Feb 2023
This document elaborates on the information given in JEP184 regarding the long-time stability of device parameters under static conditions and under application near switching conditions. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Committee(s): JC-70, JC-70.2 Free download. Registration or login required.

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