Standards & Documents Search

Displaying 6 - 10 of 16 documents. Show 5 | 10 results per page.

Title	Document #	Date
Guideline to Specify a Transient Off-State Withstand Voltage Robustness Indicator in Datasheets for Lateral GaN Power Conversion Devices, Version 1.0	JEP186	Dec 2021
This guideline describes different techniques for specifying a Transient Off-state Withstand Voltage Robustness Indicator in datasheets for lateral GaN power conversion devices. This guideline does not convey preferences for any of the specification types presented, nor does the guideline address formatting of datasheets. This guideline does not indicate nor require that the datasheet parameters are used in production tests, nor specify how the values were obtained. Committee(s): JC-70.1 Free download. Registration or login required.
Guidelines for Representing Switching Losses of SIC MOSFETs in Datasheets	JEP187	Dec 2021
This document describes the impact of measurement and/or setup parameters on switching losses of power semiconductor switches; focusing primarily on SiC MOSFET turn-on losses. In terms of turn-off losses, the behavior of SiC MOSFETs is similar to that of existing silicon based power MOSFETs, and as such are adequately represented in typical datasheets. Committee(s): JC-70.2 Free download. Registration or login required.
Guideline for Evaluating dv/dt Robustness of SiC Power Devices, Version 1.0	JEP190	Aug 2022
This document provides stress procedures, general failure criteria and documentation guidelines such that the dv/dt robustness can be demonstrated, evaluated and documented. This document gives examples for test setups which can be used and the corresponding test conditions. Additionally, criteria are explained under which device manufacturers can select an appropriate test setup. Committee(s): JC-70.2 Free download. Registration or login required.
Guidelines for Gate Charge (QG) Test Method for SiC MOSFET	JEP192	Jan 2023
This publication defines a QGS, TOT, QGD and QGS, TH which can be extracted from a measured QG waveform for SiC MOSFETs. Committee(s): JC-70, JC-70.2 Free download. Registration or login required.
Guideline for Gate Oxide Reliability and Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs	JEP194	Feb 2023
This document provides guidelines for evaluating gate reliability and lifetime testing for silicon carbide (SiC) based power devices with a gate oxide or gate dielectric. Committee(s): JC-70, JC-70.2 Free download. Registration or login required.

Pages