Global Standards for the Microelectronics Industry
Standards & Documents Search
| Title | Document # |
Date |
|---|---|---|
Guidelines for Representing Threshold Voltage of SiC MOSFETs in Datasheets, Version 1.0Release Number: Version 1.0 |
JEP202 | Jan 2025 |
This publication provides guidelines for representation of threshold voltage and transfer characteristic of SiC MOS device in datasheets. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Free download. Registration or login required. |
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Guidelines for Reverse Recovery Time and Charge Measurement of SiC MOSFET Version 1.0 |
JEP201 | Aug 2024 |
This guideline is intended to overcome the limitations of prior standards and provide a test circuit and method that provides both reliable and repeatable results. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Free download. Registration or login required. |
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Test Methods for Switching Energy Loss Associated with Output Capacitance Hysteresis in Semiconductor Power Devices Volume 1 |
JEP200 | Jun 2024 |
This document provides guidelines for test methods and circuits to be used for measuring switching energy loss due to output capacitance hysteresis in semiconductor power devices. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Committee(s): JC-70, JC-70.1, JC-70.2 Free download. Registration or login required. |
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Guideline for Evaluating Bipolar Degradation of Silicon Carbide Power Devices |
JEP197 | Nov 2023 |
This publication provides guidance to SiC product suppliers and related power electronic industries in their evaluation of bipolar degradation mechanism in SiC power devices. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Free download. Registration or login required. |
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Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices |
JEP198 | Nov 2023 |
This publication presents guidelines for evaluating the Time Dependent Breakdown (TDB) reliability of GaN power switches. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Free download. Registration or login required. |
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Guideline for Gate Oxide Reliability and Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs |
JEP194 | Feb 2023 |
This document provides guidelines for evaluating gate reliability and lifetime testing for silicon carbide (SiC) based power devices with a gate oxide or gate dielectric. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Free download. Registration or login required. |
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Guideline for Evaluating Gate Switching Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion |
JEP195 | Feb 2023 |
This document elaborates on the information given in JEP184 regarding the long-time stability of device parameters under static conditions and under application near switching conditions. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Free download. Registration or login required. |
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Guidelines for Measuring the Threshold Voltage (VT) of SiC MOSFETs |
JEP183A | Jan 2023 |
This publication describes the guidelines for VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Committee(s): JC-70.1 Free download. Registration or login required. |
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Guidelines for Gate Charge (QG) Test Method for SiC MOSFET |
JEP192 | Jan 2023 |
This publication defines a QGS, TOT, QGD and QGS, TH which can be extracted from a measured QG waveform for SiC MOSFETs. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Free download. Registration or login required. |
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Guideline for Evaluating dv/dt Robustness of SiC Power Devices, Version 1.0 |
JEP190 | Aug 2022 |
This document provides stress procedures, general failure criteria and documentation guidelines such that the dv/dt robustness can be demonstrated, evaluated and documented. This document gives examples for test setups which can be used and the corresponding test conditions. Additionally, criteria are explained under which device manufacturers can select an appropriate test setup. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Committee(s): JC-70.2 Free download. Registration or login required. |
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