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Displaying 11 - 16 of 16 documents. Show 5 | 10 results per page.

Title	Document #	Date
Guideline for Evaluating Gate Switching Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion	JEP195	Feb 2023
This document elaborates on the information given in JEP184 regarding the long-time stability of device parameters under static conditions and under application near switching conditions. Committee(s): JC-70, JC-70.2 Free download. Registration or login required.
Guideline for Evaluating Bipolar Degradation of Silicon Carbide Power Devices	JEP197	Nov 2023
This publication provides guidance to SiC product suppliers and related power electronic industries in their evaluation of bipolar degradation mechanism in SiC power devices. Committee(s): JC-70, JC-70.2 Free download. Registration or login required.
Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices	JEP198	Nov 2023
This publication presents guidelines for evaluating the Time Dependent Breakdown (TDB) reliability of GaN power switches. Committee(s): JC-70, JC-70.1 Free download. Registration or login required.
Test Methods for Switching Energy Loss Associated with Output Capacitance Hysteresis in Semiconductor Power Devices Volume 1	JEP200	Jun 2024
This document provides guidelines for test methods and circuits to be used for measuring switching energy loss due to output capacitance hysteresis in semiconductor power devices. Committee(s): JC-70, JC-70.1, JC-70.2 Free download. Registration or login required.
Guidelines for Reverse Recovery Time and Charge Measurement of SiC MOSFET Version 1.0	JEP201	Aug 2024
This guideline is intended to overcome the limitations of prior standards and provide a test circuit and method that provides both reliable and repeatable results. Committee(s): JC-70, JC-70.2 Free download. Registration or login required.
Guidelines for Representing Threshold Voltage of SiC MOSFETs in Datasheets, Version 1.0 Release Number: Version 1.0	JEP202	Jan 2025
This publication provides guidelines for representation of threshold voltage and transfer characteristic of SiC MOS device in datasheets. Committee(s): JC-70, JC-70.2 Free download. Registration or login required.

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