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Title	Document #	Date
DYNAMIC ON-RESISTANCE TEST METHOD GUIDELINES FOR GaN HEMT BASED POWER CONVERSION DEVICES, VERSION 1.0	JEP173	Jan 2019
This document is intended for use in the GaN power semiconductor and related power electronic industries, and provides guidelines for measuring the dynamic ON-resistance of GaN power devices. Committee(s): JC-70.1 Free download. Registration or login required.
GUIDELINE FOR SWITCHING RELIABILITY EVALUATION PROCEDURES FOR GALLIUM NITRIDE POWER CONVERSION DEVICES	JEP180.01	Jan 2021
This document is intended for use by GaN product suppliers and related power electronic industries. It provides guidelines for evaluating the switching reliability of GaN power switches and assuring their reliable use in power conversion applications. It is applicable to planar enhancement-mode, depletion-mode, GaN integrated power solutions and cascode GaN power switches. Committee(s): JC-70.1 Free download. Registration or login required.
TEST METHOD FOR CONTINUOUS-SWITCHING EVALUATION OF GALLIUM NITRIDE POWER CONVERSION DEVICES	JEP182	Jan 2021
This document is intended for use in the GaN power semiconductor and related power electronic industries and provides guidelines for test methods and circuits to be used for continuous-switching tests of GaN power conversion devices. Committee(s): JC-70.1 Free download. Registration or login required.
Guidelines for Measuring the Threshold Voltage (VT) of SiC MOSFETs	JEP183A	Jan 2023
This publication describes the guidelines for VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis. Committee(s): JC-70.1 Free download. Registration or login required.
GUIDELINE FOR EVALUATING BIAS TEMPERATURE INSTABILITY OF SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR DEVICES FOR POWER ELECTRONIC CONVERSION	JEP184	Mar 2021
The scope of this document covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS devices as well. Committee(s): JC-70.2 Free download. Registration or login required.
Guideline to Specify a Transient Off-State Withstand Voltage Robustness Indicator in Datasheets for Lateral GaN Power Conversion Devices, Version 1.0	JEP186	Dec 2021
This guideline describes different techniques for specifying a Transient Off-state Withstand Voltage Robustness Indicator in datasheets for lateral GaN power conversion devices. This guideline does not convey preferences for any of the specification types presented, nor does the guideline address formatting of datasheets. This guideline does not indicate nor require that the datasheet parameters are used in production tests, nor specify how the values were obtained. Committee(s): JC-70.1 Free download. Registration or login required.
Guidelines for Representing Switching Losses of SIC MOSFETs in Datasheets	JEP187	Dec 2021
This document describes the impact of measurement and/or setup parameters on switching losses of power semiconductor switches; focusing primarily on SiC MOSFET turn-on losses. In terms of turn-off losses, the behavior of SiC MOSFETs is similar to that of existing silicon based power MOSFETs, and as such are adequately represented in typical datasheets. Committee(s): JC-70.2 Free download. Registration or login required.
Guideline for Evaluating dv/dt Robustness of SiC Power Devices, Version 1.0	JEP190	Aug 2022
This document provides stress procedures, general failure criteria and documentation guidelines such that the dv/dt robustness can be demonstrated, evaluated and documented. This document gives examples for test setups which can be used and the corresponding test conditions. Additionally, criteria are explained under which device manufacturers can select an appropriate test setup. Committee(s): JC-70.2 Free download. Registration or login required.
Guidelines for Gate Charge (QG) Test Method for SiC MOSFET	JEP192	Jan 2023
This publication defines a QGS, TOT, QGD and QGS, TH which can be extracted from a measured QG waveform for SiC MOSFETs. Committee(s): JC-70, JC-70.2 Free download. Registration or login required.
Guideline for Gate Oxide Reliability and Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs	JEP194	Feb 2023
This document provides guidelines for evaluating gate reliability and lifetime testing for silicon carbide (SiC) based power devices with a gate oxide or gate dielectric. Committee(s): JC-70, JC-70.2 Free download. Registration or login required.
Guideline for Evaluating Gate Switching Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion	JEP195	Feb 2023
This document elaborates on the information given in JEP184 regarding the long-time stability of device parameters under static conditions and under application near switching conditions. Committee(s): JC-70, JC-70.2 Free download. Registration or login required.
Guideline for Evaluating Bipolar Degradation of Silicon Carbide Power Devices	JEP197	Nov 2023
This publication provides guidance to SiC product suppliers and related power electronic industries in their evaluation of bipolar degradation mechanism in SiC power devices. Committee(s): JC-70, JC-70.2 Free download. Registration or login required.
Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices	JEP198	Nov 2023
This publication presents guidelines for evaluating the Time Dependent Breakdown (TDB) reliability of GaN power switches. Committee(s): JC-70, JC-70.1 Free download. Registration or login required.
Test Methods for Switching Energy Loss Associated with Output Capacitance Hysteresis in Semiconductor Power Devices Volume 1	JEP200	Jun 2024
This document provides guidelines for test methods and circuits to be used for measuring switching energy loss due to output capacitance hysteresis in semiconductor power devices. Committee(s): JC-70, JC-70.1, JC-70.2 Free download. Registration or login required.
Guidelines for Reverse Recovery Time and Charge Measurement of SiC MOSFET Version 1.0	JEP201	Aug 2024
This guideline is intended to overcome the limitations of prior standards and provide a test circuit and method that provides both reliable and repeatable results. Committee(s): JC-70, JC-70.2 Free download. Registration or login required.

Standards & Documents Search

DYNAMIC ON-RESISTANCE TEST METHOD GUIDELINES FOR GaN HEMT BASED POWER CONVERSION DEVICES, VERSION 1.0

GUIDELINE FOR SWITCHING RELIABILITY EVALUATION PROCEDURES FOR GALLIUM NITRIDE POWER CONVERSION DEVICES

TEST METHOD FOR CONTINUOUS-SWITCHING EVALUATION OF GALLIUM NITRIDE POWER CONVERSION DEVICES

Guidelines for Measuring the Threshold Voltage (VT) of SiC MOSFETs

GUIDELINE FOR EVALUATING BIAS TEMPERATURE INSTABILITY OF SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR DEVICES FOR POWER ELECTRONIC CONVERSION

Guideline to Specify a Transient Off-State Withstand Voltage Robustness Indicator in Datasheets for Lateral GaN Power Conversion Devices, Version 1.0

Guidelines for Representing Switching Losses of SIC MOSFETs in Datasheets

Guideline for Evaluating dv/dt Robustness of SiC Power Devices, Version 1.0

Guidelines for Gate Charge (QG) Test Method for SiC MOSFET

Guideline for Gate Oxide Reliability and Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs

Guideline for Evaluating Gate Switching Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion

Guideline for Evaluating Bipolar Degradation of Silicon Carbide Power Devices

Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices

Test Methods for Switching Energy Loss Associated with Output Capacitance Hysteresis in Semiconductor Power Devices Volume 1

Guidelines for Reverse Recovery Time and Charge Measurement of SiC MOSFET Version 1.0

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