Global Standards for the Microelectronics Industry
Standards & Documents Search
Title | Document # | Date |
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SYSTEM LEVEL ROWHAMMER MITIGATION |
JEP301-1 | Mar 2021 |
A DRAM rowhammer security exploit is a serious threat to cloud service providers, data centers, laptops, smart phones, self-driving cars and IoT devices. Hardware research and development will take time. DRAM components, DRAM DIMMs, System-on-chip (SoC), chipsets and system products have their own design cycle time and overall life time. This publication recommends best practices to mitigate the security risks from rowhammer attacks. Item 1866.02. Committee(s): JC-42 Free download. Registration or login required. |
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REPLAY PROTECTED MONOTONIC COUNTER (RPMC) FOR SERIAL FLASH DEVICES |
JESD260 | Apr 2021 |
This document provides the requirements for an additional block called as Replay Protection Monotonic Counter. (RPMC) Replay Protection provides a building block towards providing additional security. This block requires modifications in both a Serial Flash device and Serial Flash Controller. The standard defines new commands for Replay Protected Monotonic Counter operations. A device that supports RPMC can support these new commands as defined in this standard. Committee(s): JC-42.4 Free download. Registration or login required. |
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LOW POWER DOUBLE DATA RATE (LPDDR) 5/5X |
JESD209-5C | Jul 2023 |
This document defines the LPDDR5/LPDDR5X standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a JEDEC compliant x16 one channel SDRAM device and x8 one channel SDRAM device. LPDDR5/LPDDR5X device density ranges from 2 Gb through 32 Gb. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4 (JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3), and LPDDR4 (JESD209-4). Available for purchase: $459.00 Add to Cart Paying JEDEC Members may login for free access. |
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HIGH BANDWIDTH MEMORY (HBM3) DRAM |
JESD238A | Jan 2023 |
The HBM3 DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM3 DRAM uses a wide-interface architecture to achieve high-speed, low power operation. Each channel interface maintains a 64 bit data bus operating at double data rate (DDR). Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office. Free download. Registration or login required. |
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Serial NOR Security Hardware Abstraction Layer |
JESD261 | Nov 2022 |
This standard provides a comprehensive definition of the NOR cryptographic security hardware abstraction layer (HAL). It also provides design guidelines and reference software to reduce design-in overhead and facilitate the second sourcing of secure memory devices. It does not attempt to standardize any other interaction to the NOR device that is not related to cryptographic security functionality within the device. Committee(s): JC-42.4 Free download. Registration or login required. |