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This standard specifies the eXpanded Serial Peripheral Interface (xSPI) for Non Volatile Memory Devices, which provides high data throughput, low signal count, and limited backward compatibility with legacy Serial Peripheral Interface (SPI) devices. It is primarily for use in computing, automotive, Internet Of Things (IOT), embedded systems and mobile systems, between host processing and peripheral devices. The xSPI electrical interface can deliver up to 400 MBytes per second raw data throughput. Item 1775.74.

Committee(s): JC-42.4

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Release No. 13

Committee(s): JC-42.3

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This publication is to inform all industry participants of a unified procedure to enable consistent measurement across the industry. This document contains the measurement procedures for testing GDDR5.

Committee(s): JC-42.3

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Item 1600.41, Terminology Update  

This document defines the Graphics Double Data Rate 4 (GDDR4) Synchronous Graphics Random

Access Memory (SGRAM) standard, including features, functionality, package, and pin assignments. This scope may be expanded in future to also include other higher density devices.

Committee(s): JC-42.3

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Terminology update.  

This standard defines the Graphics Double Data This standard defines the GDDR5X SGRAM memory standard, including features, device operation, electrical characteristics, timings, signal pin assignments, and package

Committee(s): JC-42.3, JC-42.3C

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This standard defines the Graphics Double Data Rate 7 (GDDR7) Synchronous Graphics Random Access Memory (SGRAM) specification, including features, functionality, package, and pin assignments.

Committee(s): JC-42, JC-42.1

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The HBM3 DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM3 DRAM uses a wide-interface architecture to achieve high-speed, low power operation. Each channel interface maintains a 64 bit data bus operating at double data rate (DDR).

Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office.

Committee(s): JC-42, JC-42.2

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This document defines the JC-42.6 Manufacturer ID. This document covers Manufacturer ID Codes for the following technologies: LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3), LPDDR4 (JESD209-4), Wide-IO (JESD229), and Wide-IO2 (JESD229-2). The purpose of this document is to define the Manufacturer ID for these devices. Item No. 1725.03C. See Annex for additions/changes. To make a request for an ID code: https://www.jedec.org/id-codes-low-power-memories

Committee(s): JC-42.6

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This document defines the LPDDR5/LPDDR5X standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a JEDEC compliant x16 one channel SDRAM device and x8 one channel SDRAM device. LPDDR5/LPDDR5X device density ranges from 2 Gb through 32 Gb. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4 (JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3), and LPDDR4 (JESD209-4).

Committee(s): JC-42, JC-42.6

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This standard defines the Low Power Double Data Rate (LPDDR) SDRAM, including features, functionality, AC and DC characteristics, packages, and pin assignments. This scope may be expanded in future to also include other higher density devices. The purpose of this document is to define the minimum set of requirements for JEDEC compliant 64Mb through 2Gb for x16 and x32 Low Power Double Data Rate SDRAM devices. System designs based on the required aspects of this standard will be supported by all LPDDR SDRAM vendors providing compliant devices. (JESD209 was originally numbered as JESD79-4 May 2006 to August 2007, corrected to JESD209 09/17/2007).

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Committee(s): JC-42.3, JC-42.6

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This document defines the LPDDR2 specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. This standard covers the following technologies: LPDDR2-S2A, LPDDR2-S2B, LPDDR2-S4A, LPDDR2-S4B, LPDDR2-N-A, and LPDDR2-N-B. The purpose of this standard is to define the minimum set of requirements for JEDEC compliant 64 Mb through 8 Gb for x8, x16, and x32 SDRAM devices as well as 64 Mb through 32 Gb for x8, x16, and x32 for NVM devices. Item 1725.01G.

Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office.

Committee(s): JC-42.6

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This document defines the LPDDR4 standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a JEDEC compliant 16 bit per channel SDRAM device with either one or two channels. LPDDR4 dual channel device density ranges from 2 Gb through 32 Gb and single channel density ranges from 1 Gb through 16 Gb.

Committee(s): JC-42, JC-42.6

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This standard defines the Low Power Double Data Rate interface for Non-Volatile Memory (LPDDR4XNVM) Standard. This standard describes features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements

for a JEDEC compliant 16 bit single channel LPDDR4X-NVM device. LPDDR4X-NVM density ranges from 128Mb through 32Gb.

Committee(s): JC-42, JC-42.6

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Release No. 16.

This replaces Release 15 and includes the following editorial changes: 1) Replaced master/slave with controller/target 2) Checked for presence of other sensitive words 3) Added Tables and Figures in Table of Contents

(Release 15, Item 1640.07)

Committee(s): JC-42.4

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Release No.9

Committee(s): JC-42

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RAM process node transistor scaling for power and DRAM capacity has made DRAM cells more sensitive to disturbances or transient faults. This sensitivity becomes much worse if external stresses are applied in a meticulously manipulated sequence, such as Rowhammer. Rowhammer related papers have been written outside of JEDEC, but some assumptions used in those papers didn’t explain the problem very clearly or correctly, so the perception for this matter is not precisely understood within the industry. This publication defines the problem and recommends following mitigations to address such concerns across the DRAM industry or academia. Item 1866.01.

Committee(s): JC-42

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Release No.04

Committee(s): JC-42

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Release No.1

Committee(s): JC-42

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Release No.5

Committee(s): JC-42

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