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This standard defines the Low Power Double Data Rate interface for Non-Volatile Memory (LPDDR4XNVM) Standard. This standard describes features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements

for a JEDEC compliant 16 bit single channel LPDDR4X-NVM device. LPDDR4X-NVM density ranges from 128Mb through 32Gb.

Committee(s): JC-42, JC-42.6

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The manufacturers identification code is defined by one or more 8 bit fields, each consisting of 7 data bits plus 1 odd parity bit. The manufacturers identification code is assigned, maintained and updated by the JEDEC Office. The intent of this identification code is that it may be used whenever a digital field is required, e.g., hardware, software, documentation, etc. To make a request for an ID Code please go to https://www.jedec.org/standards-documents/id-codes-order-form

Committee(s): JC-42, JC-42.3

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This document specifies standard temperature ranges that may be used, by way of referencing JESD402-1, in other standards, specifications, and datasheets when defining temperature related specifications.

Committee(s): JC-42

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This document defines the LPDDR4 standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a JEDEC compliant 16 bit per channel SDRAM device with either one or two channels. LPDDR4 dual channel device density ranges from 2 Gb through 32 Gb and single channel density ranges from 1 Gb through 16 Gb.

Committee(s): JC-42, JC-42.6

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This document defines the JC-42.6 Manufacturer ID. This document covers Manufacturer ID Codes for the following technologies: LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3), LPDDR4 (JESD209-4), Wide-IO (JESD229), and Wide-IO2 (JESD229-2). The purpose of this document is to define the Manufacturer ID for these devices. Item No. 1725.03C. See Annex for additions/changes. To make a request for an ID code: https://www.jedec.org/id-codes-low-power-memories

Committee(s): JC-42.6

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This document defines the Graphics Double Data Rate 6 (GDDR6) Synchronous Graphics Random Access Memory (SGRAM) specification, including features, functionality, package, and pin assignments. The purpose of this Standard is to define the minimum set of requirements for 8 Gb through 16 Gb x16 dual channel GDDR6 SGRAM devices. System designs based on the required aspects of this standard will be supported by all GDDR6 SGRAM vendors providing compatible devices. Some aspects of the GDDR6 standard such as AC timings and capacitance values were not standardized. Some features are optional and therefore may vary among vendors. In all cases, vendor data sheets should be consulted for specifics. This document was created based on some aspects of the GDDR5 Standard (JESD212).

Committee(s): JC-42.3C

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Terminology update.  

This standard defines the Graphics Double Data This standard defines the GDDR5X SGRAM memory standard, including features, device operation, electrical characteristics, timings, signal pin assignments, and package

Committee(s): JC-42.3, JC-42.3C

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The HBM3 DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM3 DRAM uses a wide-interface architecture to achieve high-speed, low power operation. Each channel interface maintains a 64 bit data bus operating at double data rate (DDR).

Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office.

Committee(s): JC-42, JC-42.2

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This standard provides a comprehensive definition of the NOR cryptographic security hardware abstraction layer (HAL). It also provides design guidelines and reference software to reduce design-in overhead and facilitate the second sourcing of secure memory devices. It does not attempt to standardize any other interaction to the NOR device that is not related to cryptographic security functionality within the device.

Committee(s): JC-42.4

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This standard specifies the eXpanded Serial Peripheral Interface (xSPI) for Non Volatile Memory Devices, which provides high data throughput, low signal count, and limited backward compatibility with legacy Serial Peripheral Interface (SPI) devices. It is primarily for use in computing, automotive, Internet Of Things (IOT), embedded systems and mobile systems, between host processing and peripheral devices. The xSPI electrical interface can deliver up to 400 MBytes per second raw data throughput. Item 1775.74.

Committee(s): JC-42.4

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Release No. 21.01, Terminology update.

This standard defines the specifications of interface parameters, signaling protocols, and features for Serial Presence Detect (SPD) EEPROMs and Temperature Sensor (TS) as used for memory module applications. The designation TSE2002av refers to the family of devices specified by this document.

Committee(s): JC-42.4

JESD21-C Solid State Memory Documents Main Page

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This purpose of the addendum is to add an optional 4-bit bus width (x4) to JESD251, xSPI standard. The xSPI interface currently supports a x1 interface that acts as a bridge to legacy SPI functionality as well as the x8 interface intended to achieve dramatically higher bus  performance than legacy SPI memory implementations. Item 1775.15. This is an editorial revision to JESD251-1, October 2018

Committee(s): JC-42.4

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Release No. 31

This revision contains terminology updates only.

Committee(s): JC-42, JC-42.5

JESD21-C Solid State Memory Documents Main Page

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Release No. 31

This revision contains terminology updates only.

Committee(s): JC-42.5

JESD21-C Solid State Memory Documents Main Page

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Release No.31

This revision contains terminology updates only.

Committee(s): JC-42, JC-42.3

JESD21-C Solid State Memory Documents Main Page

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This document provides the requirements for an additional block called as Replay Protection Monotonic Counter. (RPMC) Replay Protection provides a building block towards providing additional security. This block requires modifications in both a Serial Flash device and Serial Flash Controller. The standard defines new commands for Replay Protected Monotonic Counter operations. A device that supports RPMC can support these new commands as defined in this standard.

Committee(s): JC-42.4

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A DRAM rowhammer security exploit is a serious threat to cloud service providers, data centers, laptops, smart phones, self-driving cars and IoT devices. Hardware research and development will take time. DRAM components, DRAM DIMMs, System-on-chip (SoC), chipsets and system products have their own design cycle time and overall life time. This publication recommends best practices to mitigate the security risks from rowhammer attacks. Item 1866.02.

Committee(s): JC-42

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The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet (Note this version is the latest version for use with JESD235D). Committee item 1797.99L.

Committee(s): JC-42.3C

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This document defines the 3DS DDR4 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a compliant 8 Gbit through 128 Gbit for x4, x8 3DS DDR4 SDRAM devices. This addendum was created based on the JESD79-4 DDR4 SDRAM specification. Each aspect of the changes for 3DS DDR4 SDRAM operation was considered. Item 1727.58G

Committee(s): JC-42.3C

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