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Test method to measure the reverse recovery characteristics of the drain source diode of a power MOSFET.

Committee(s): JC-25

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This addendum establishes a method for measuring power device gate charge. A gate charge test is performed by driving the device gate with a constant current and measuring the resulting gate voltage response. Constant gate current scales the gate voltage, a function of time, to a function of coulombs. The slope of the generated response reflects the active device capacitance as it varies during the switching transition . Gate charge measurements are useful for characterizing the large signal switching performance of power MOS and IGBT devices. Developed over a four year span by the JEDEC JC-25 Committee, the method defines a repeatable means of measuring the widely published Qgd charge values.

Committee(s): JC-25

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The purpose of this test method is to measure the thermal impedance of the Bipolar Transistor under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the base-emitter voltage is used as the junction temperature indicator. This test method is used to measure the thermal response of the junction to a heating pulse. Specifically, the test may be used to measure dc thermal resistance, and to ensure proper die mountdown to its case. This is accomplished through the appropriate choice of pulse duration and heating power magnitude.

Committee(s): JC-25

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This standard describes in detail the method for thermal measurements of Insulated Gate Bipolar Transistors (IGBTs) and is suitable for use both in manufacturing and application of the devices. The method covers both thermal transient and thermal equilibrium measurements for manufacturing process control and device characterization purposes. Properly implemented, JESD24-6 provides a basis for obtaining realistic thermal parametric values that will benefit supplier's internal effectiveness and will be useful to the design and manufacturer of reliable IGBT circuits.

Committee(s): JC-25

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Determines the repetitive inductive avalanche switching capability of power switching transistors.

Committee(s): JC-25

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This publication is intended as a guideline to establish procedures, consideration and common practices that will allow a manufacturer, an application entity, a system designer and other interested parties to define current capability limitations in the leads of components and power systems with semiconductor components. This is a guideline, not a standardized method, it was developed over several years to clarify questions that had been posed to committee members in their respective engineering functions.

Committee(s): JC-25

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This standard provides a method of measurement for small-signal HF, VHF, and UHF power gain of low power transistors. Formerly known as RS-306 and/or EIA-306.

Committee(s): JC-25

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This standard contains a three-terminal procedure for capacitance measurement with due precautions for shielding of extraneous effects due to terminal leads and metal enclosures. Formerly known as RS-398 and/or EIA-398

Committee(s): JC-25

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This standard describes a test method for measurement of transistor noise figure and effective input noise temperature at MF, HF, and VHF. This standard also adds the necessary information to make 'effective input noise temperature measurements'. This method is a revision of EIA-311 and incorporates material previously found in EIA-283, Test Method for Transistor Noise Figure Measurements at Medium Frequencies, Rescinded November 1981. Formerly known as RS-311 and/or EIA-311-A.

Committee(s): JC-25

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