Global Standards for the Microelectronics Industry
Standards & Documents Search
Title |
Document # | Date |
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PREFERRED LEAD CONFIGURATION FOR FIELD-EFFECT TRANSISTORS:Status: ReaffirmedSeptember 1981, April 1999 |
JEP69-B | Nov 1973 |
This publication indicates preferred pinouts for FETs in various package designs. Committee(s): JC-25 Free download. Registration or login required. |
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RANGES AND CONDITIONS FOR SPECIFYING BETA FOR LOW POWER, AUDIO FREQUENCY TRANSISTORS FOR ENTERTAINMENT SERVICE:Status: ReaffirmedApril 1981, April 1999, March 2009 |
JESD302 | Jan 1965 |
This standard establishes the preferred rating ranges and conditions for specifying beta for low power, audio frequency transistors intended for entertainment service. Formerly known as RS-302 and EIA-302. Committee(s): JC-25 Free download. Registration or login required. |
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RECOMMENDED PRACTICE FOR MEASUREMENT OF TRANSISTOR LEAD TEMPERATURE: |
JEP84A | Jun 2004 |
This publication covers recommended methods for measurement of transistor lead temperatures under various load conditions. The techniques described are sufficiently accurate for most applications. Committee(s): JC-25 Free download. Registration or login required. |
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STANDARD FOR THE MEASUREMENT OF CREStatus: Reaffirmed April 1981, April 1999, March 2009 |
JESD340 | Nov 1967 |
This standard offers an easily measured parameter which is one of the significant characteristics in determining the stability of a transistor intended for small-signal operation. The measurement technique allows rapid testing. Its correlation to AC stability will help to establish the interchangeability of a device. Formerly known as RS-340 and/or EIA-340. Committee(s): JC-25 Free download. Registration or login required. |
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STANDARD FOR THE MEASUREMENT OF SMALL-SIGNAL TRANSISTOR SCATTERING PARAMETERS:Status: ReaffirmedApril 1999, March 2009 |
JESD435 | Apr 1976 |
This standard specifies the standard for the measurement of small-signal transistor scattering parameters. Formerly known as RS-435 and/or EIA-435 Committee(s): JC-25 Free download. Registration or login required. |
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STANDARD LIST OF VALUES TO BE USED IN POWER TRANSISTOR DEVICE REGISTRATION AND MINIMUM DIFFERENCES FOR DISCRETENESS OF REGISTRATIONS - SUPERSEDED BY EIA-419-A, February 1996.Status: Rescinded |
JEP74 | Jan 1969 |
Committee(s): JC-25 |
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STANDARD LIST OF VALUES TO BE USED IN SEMICONDUCTOR DEVICE SPECIFICATIONS AND REGISTRATION FORMAT:Status: ReaffirmedMarch 2001 |
JESD419-A | Oct 1980 |
This document contains standard lists of values which are recommended for use in semiconductor device specification and JEDEC Registration Formats. Good reasons should exist in those cases where values are used that are not included in these lists. Formerly known as EIA-419-A, that superseded JEP74 (February 1996). Committee(s): JC-25 Free download. Registration or login required. |
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TEST METHODS FOR THE COLLECTOR-BASE TIME CONSTANT AND FOR THE RESISTIVE PART OF THE COMMON-EMITTER INPUT IMPEDANCEStatus: Reaffirmed November 1963, June 1972, April 1981, April 1999, October 2002 |
JESD284-A | Nov 1963 |
The test methods described in this Standard are generally applicable to alloy-like devices for which the usual simplified equivalent circuits can be employed. Formerly known as EIA-284-A (November 1963). Became JESD284-A when reaffirmed in October 2002. Committee(s): JC-25 Free download. Registration or login required. |
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TEST PROCEDURES FOR VERIFICATION OF MAXIMUM RATINGS OF POWER TRANSISTORS:Status: ReaffirmedSeptember 1981, April 1999 |
JEP65 | Dec 1967 |
This publication describes tests which are intended to represent the verification of maximum ratings for data sheets; they are not tests for performance or quality level. This material is to be used in conjunction with formats developed for device registration and defining data. Committee(s): JC-25 Free download. Registration or login required. |
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THE MEASUREMENT OF SMALL-SIGNAL VHF-UHF TRANSISTOR ADMITTANCE PARAMETERS:Status: ReaffirmedApril 1981, April 1999, March 2009 |
JESD372 | May 1970 |
This standard describes the method to be used for the measurement of small-signal VHF-UHF transistor admittance parameters, in preparing data sheets for JEDEC registration of low power transistors. Formerly known as RS-372 and/or EIA-372 Committee(s): JC-25 Free download. Registration or login required. |
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THE MEASUREMENT OF SMALL-SIGNAL VHF-UHF TRANSISTOR SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO:Status: ReaffirmedApril 1981, April 1999, March 2009 |
JESD371 | Feb 1970 |
This standard describes the method to be used for the measurement of small-signal VHF-UHF transistor short-circuit forward current transfer ratio, in preparing data sheets for JEDEC registration of low power transistors. Formerly known as RS-371 and/or EIA-371. Committee(s): JC-25 Free download. Registration or login required. |
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THE MEASUREMENT OF TRANSISTOR EQUIVALENT NOISE VOLTAGE AND EQUIVALENT NOISE CURRENT AT FREQUENCIES OF UP TO 20 kHzStatus: Reaffirmed April 1981, April 1999, March 2009 |
JESD354 | Apr 1968 |
This standard provides a method for determining values, for device registration purposes, for transistor equivalent noise voltage and equivalent noise current at frequencies up to 20 kHz. This method is applicable to transistors whose noise has a Gaussian, flat (white) or I/f power distribution. Formerly known as RS-354 and/or EIA-354 Committee(s): JC-25 Free download. Registration or login required. |
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THE MEASUREMENT OF TRANSISTOR NOISE FIGURE AT FREQUENCIES UP TO 20 kHz BY SINUSOIDAL SIGNAL-GENERATOR METHODStatus: Reaffirmed April 1981, April 1999, March 2009 |
JESD353 | Apr 1968 |
This noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution. Formerly known as RS-353 and/or EIA-353 Committee(s): JC-25 Free download. Registration or login required. |
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THERMAL IMPEDANCE MEASUREMENT FOR INSULATED GATE BIPOLAR TRANSISTORS - (Delta VCE(on) Method) |
JESD24-12 | Jun 2004 |
The purpose of this test method is to measure the thermal impedance of the IGBT (Insulated Gate Bipolar Transistor) under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the collector-emitter on voltage, VCE(on), is used as the junction temperature indicator. This is an alternative method to JEDEC Standard No. 24-6. Committee(s): JC-25 Free download. Registration or login required. |
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THERMAL RESISTANCE MEASUREMENTS OF CONDUCTION COOLED POWER TRANSISTORS:Status: ReaffirmedApril 1981, April 2001 |
JESD313-B | Oct 1975 |
This standard provides a test method for measuring thermal resistance for conduction cooled power transistors. Committee(s): JC-25 Free download. Registration or login required. |
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USER GUIDELINES FOR IR THERMAL IMAGING DETERMINATION OF DIE TEMPERATURE: |
JEP138 | Sep 1999 |
The purpose of these user guidelines is to provide background and an example for the use of an infrared (IR) microscope to determine die temperature of electronic devices for calculations such as thermal resistance. Committee(s): JC-25 Free download. Registration or login required. |
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