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Title	Document #	Date
USER GUIDELINES FOR IR THERMAL IMAGING DETERMINATION OF DIE TEMPERATURE:	JEP138	Sep 1999
The purpose of these user guidelines is to provide background and an example for the use of an infrared (IR) microscope to determine die temperature of electronic devices for calculations such as thermal resistance. Committee(s): JC-25 Free download. Registration or login required.
THERMAL RESISTANCE MEASUREMENTS OF CONDUCTION COOLED POWER TRANSISTORS: Status: ReaffirmedApril 1981, April 2001	JESD313-B	Oct 1975
This standard provides a test method for measuring thermal resistance for conduction cooled power transistors. Committee(s): JC-25 Free download. Registration or login required.
THERMAL IMPEDANCE MEASUREMENT FOR INSULATED GATE BIPOLAR TRANSISTORS - (Delta VCE(on) Method)	JESD24-12	Jun 2004
The purpose of this test method is to measure the thermal impedance of the IGBT (Insulated Gate Bipolar Transistor) under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the collector-emitter on voltage, VCE(on), is used as the junction temperature indicator. This is an alternative method to JEDEC Standard No. 24-6. Committee(s): JC-25 Free download. Registration or login required.
THE MEASUREMENT OF TRANSISTOR NOISE FIGURE AT FREQUENCIES UP TO 20 kHz BY SINUSOIDAL SIGNAL-GENERATOR METHOD Status: Reaffirmed April 1981, April 1999, March 2009	JESD353	Apr 1968
This noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution. Formerly known as RS-353 and/or EIA-353 Committee(s): JC-25 Free download. Registration or login required.
THE MEASUREMENT OF TRANSISTOR EQUIVALENT NOISE VOLTAGE AND EQUIVALENT NOISE CURRENT AT FREQUENCIES OF UP TO 20 kHz Status: Reaffirmed April 1981, April 1999, March 2009	JESD354	Apr 1968
This standard provides a method for determining values, for device registration purposes, for transistor equivalent noise voltage and equivalent noise current at frequencies up to 20 kHz. This method is applicable to transistors whose noise has a Gaussian, flat (white) or I/f power distribution. Formerly known as RS-354 and/or EIA-354 Committee(s): JC-25 Free download. Registration or login required.

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