Global Standards for the Microelectronics Industry
Standards & Documents Search
Title | Document # | Date |
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POWER MOSFET ELECTRICAL DOSE RATE TEST METHOD:Status: ReaffirmedApril 1999 |
JEP115 | Aug 1989 |
The purpose of this Test Method is to establish electrical criteria for comparing and specifying power MOSFET performance under high dose rate radiation. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Committee(s): JC-25 Free download. Registration or login required. |
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USER GUIDELINES FOR IR THERMAL IMAGING DETERMINATION OF DIE TEMPERATURE: |
JEP138 | Sep 1999 |
The purpose of these user guidelines is to provide background and an example for the use of an infrared (IR) microscope to determine die temperature of electronic devices for calculations such as thermal resistance. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Committee(s): JC-25 Free download. Registration or login required. |
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TEST PROCEDURES FOR VERIFICATION OF MAXIMUM RATINGS OF POWER TRANSISTORS:Status: ReaffirmedSeptember 1981, April 1999 |
JEP65 | Dec 1967 |
This publication describes tests which are intended to represent the verification of maximum ratings for data sheets; they are not tests for performance or quality level. This material is to be used in conjunction with formats developed for device registration and defining data. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Committee(s): JC-25 Free download. Registration or login required. |
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PREFERRED LEAD CONFIGURATION FOR FIELD-EFFECT TRANSISTORS:Status: ReaffirmedSeptember 1981, April 1999 |
JEP69-B | Nov 1973 |
This publication indicates preferred pinouts for FETs in various package designs. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Committee(s): JC-25 Free download. Registration or login required. |
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RECOMMENDED PRACTICE FOR MEASUREMENT OF TRANSISTOR LEAD TEMPERATURE: |
JEP84A | Jun 2004 |
This publication covers recommended methods for measurement of transistor lead temperatures under various load conditions. The techniques described are sufficiently accurate for most applications. A list of RAND License Assurance/Disclosure Forms is available to JEDEC members on the restricted Members' website. Non-members may obtain individual Assurance/Disclosure forms by requesting them from the JEDEC office. Committee(s): JC-25 Free download. Registration or login required. |