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Title	Document #	Date
RANGES AND CONDITIONS FOR SPECIFYING BETA FOR LOW POWER, AUDIO FREQUENCY TRANSISTORS FOR ENTERTAINMENT SERVICE: Status: ReaffirmedApril 1981, April 1999, March 2009	JESD302	Jan 1965
This standard establishes the preferred rating ranges and conditions for specifying beta for low power, audio frequency transistors intended for entertainment service. Formerly known as RS-302 and EIA-302. Committee(s): JC-25 Free download. Registration or login required.
MEASUREMENT OF SMALL SIGNAL HF, VHF, AND UHF POWER GAIN OF TRANSISTORS Status: Reaffirmed April 1981, April 1999, March 2009	JESD306	May 1965
This standard provides a method of measurement for small-signal HF, VHF, and UHF power gain of low power transistors. Formerly known as RS-306 and/or EIA-306. Committee(s): JC-25 Free download. Registration or login required.
THERMAL RESISTANCE MEASUREMENTS OF CONDUCTION COOLED POWER TRANSISTORS: Status: ReaffirmedApril 1981, April 2001	JESD313-B	Oct 1975
This standard provides a test method for measuring thermal resistance for conduction cooled power transistors. Committee(s): JC-25 Free download. Registration or login required.
STANDARD FOR THE MEASUREMENT OF CRE Status: Reaffirmed April 1981, April 1999, March 2009	JESD340	Nov 1967
This standard offers an easily measured parameter which is one of the significant characteristics in determining the stability of a transistor intended for small-signal operation. The measurement technique allows rapid testing. Its correlation to AC stability will help to establish the interchangeability of a device. Formerly known as RS-340 and/or EIA-340. Committee(s): JC-25 Free download. Registration or login required.
THE MEASUREMENT OF TRANSISTOR NOISE FIGURE AT FREQUENCIES UP TO 20 kHz BY SINUSOIDAL SIGNAL-GENERATOR METHOD Status: Reaffirmed April 1981, April 1999, March 2009	JESD353	Apr 1968
This noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution. Formerly known as RS-353 and/or EIA-353 Committee(s): JC-25 Free download. Registration or login required.
THE MEASUREMENT OF TRANSISTOR EQUIVALENT NOISE VOLTAGE AND EQUIVALENT NOISE CURRENT AT FREQUENCIES OF UP TO 20 kHz Status: Reaffirmed April 1981, April 1999, March 2009	JESD354	Apr 1968
This standard provides a method for determining values, for device registration purposes, for transistor equivalent noise voltage and equivalent noise current at frequencies up to 20 kHz. This method is applicable to transistors whose noise has a Gaussian, flat (white) or I/f power distribution. Formerly known as RS-354 and/or EIA-354 Committee(s): JC-25 Free download. Registration or login required.
THE MEASUREMENT OF SMALL-SIGNAL VHF-UHF TRANSISTOR SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO: Status: ReaffirmedApril 1981, April 1999, March 2009	JESD371	Feb 1970
This standard describes the method to be used for the measurement of small-signal VHF-UHF transistor short-circuit forward current transfer ratio, in preparing data sheets for JEDEC registration of low power transistors. Formerly known as RS-371 and/or EIA-371. Committee(s): JC-25 Free download. Registration or login required.
THE MEASUREMENT OF SMALL-SIGNAL VHF-UHF TRANSISTOR ADMITTANCE PARAMETERS: Status: ReaffirmedApril 1981, April 1999, March 2009	JESD372	May 1970
This standard describes the method to be used for the measurement of small-signal VHF-UHF transistor admittance parameters, in preparing data sheets for JEDEC registration of low power transistors. Formerly known as RS-372 and/or EIA-372 Committee(s): JC-25 Free download. Registration or login required.
MEASUREMENT OF SMALL VALUES OF TRANSISTOR CAPACITANCE: Status: ReaffirmedApril 1981, April 1999, March 2009	JESD398	Jul 1972
This standard contains a three-terminal procedure for capacitance measurement with due precautions for shielding of extraneous effects due to terminal leads and metal enclosures. Formerly known as RS-398 and/or EIA-398 Committee(s): JC-25 Free download. Registration or login required.
STANDARD FOR THE MEASUREMENT OF SMALL-SIGNAL TRANSISTOR SCATTERING PARAMETERS: Status: ReaffirmedApril 1999, March 2009	JESD435	Apr 1976
This standard specifies the standard for the measurement of small-signal transistor scattering parameters. Formerly known as RS-435 and/or EIA-435 Committee(s): JC-25 Free download. Registration or login required.
POWER MOSFET ELECTRICAL DOSE RATE TEST METHOD: Status: ReaffirmedApril 1999	JEP115	Aug 1989
The purpose of this Test Method is to establish electrical criteria for comparing and specifying power MOSFET performance under high dose rate radiation. Committee(s): JC-25 Free download. Registration or login required.
USER GUIDELINES FOR IR THERMAL IMAGING DETERMINATION OF DIE TEMPERATURE:	JEP138	Sep 1999
The purpose of these user guidelines is to provide background and an example for the use of an infrared (IR) microscope to determine die temperature of electronic devices for calculations such as thermal resistance. Committee(s): JC-25 Free download. Registration or login required.
TEST PROCEDURES FOR VERIFICATION OF MAXIMUM RATINGS OF POWER TRANSISTORS: Status: ReaffirmedSeptember 1981, April 1999	JEP65	Dec 1967
This publication describes tests which are intended to represent the verification of maximum ratings for data sheets; they are not tests for performance or quality level. This material is to be used in conjunction with formats developed for device registration and defining data. Committee(s): JC-25 Free download. Registration or login required.
PREFERRED LEAD CONFIGURATION FOR FIELD-EFFECT TRANSISTORS: Status: ReaffirmedSeptember 1981, April 1999	JEP69-B	Nov 1973
This publication indicates preferred pinouts for FETs in various package designs. Committee(s): JC-25 Free download. Registration or login required.
RECOMMENDED PRACTICE FOR MEASUREMENT OF TRANSISTOR LEAD TEMPERATURE:	JEP84A	Jun 2004
This publication covers recommended methods for measurement of transistor lead temperatures under various load conditions. The techniques described are sufficiently accurate for most applications. Committee(s): JC-25 Free download. Registration or login required.
POWER MOSFETS:	JESD24	Jul 1985
This standard contains a listing of terms and definitions and letter symbols; a description of established procedures that are followed in the assignment of semiconductor-industry-type designations to power transistors; electrical verification test; thermal characteristics; and a user's guide. Committee(s): JC-25 Free download. Registration or login required.
ADDENDUM No. 1 to JESD24 - METHOD FOR MEASUREMENT OF POWER DEVICE TURN-OFF SWITCHING LOSS: Status: ReaffirmedApril 1999, October 2002	JESD24- 1	Oct 1989
Describes the method of a typical oscilloscope waveform and the basic test circuit employed in the measurement of turn off loss for bipolar, IGBT and MOSFET power semiconductors. This method can be used as a standard for evaluating power semiconductor turn-off switching loss capability and defines standard terminology that should be referenced within the electronic industry. Committee(s): JC-25 Free download. Registration or login required.
ADDENDUM No. 10 to JESD24 - TEST METHOD FOR MEASUREMENT OF REVERSE RECOVERY TIME trr FOR POWER MOSFET DRAIN-SOURCE DIODES: Status: ReaffirmedOctober 2002	JESD24-10	Aug 1994
Test method to measure the reverse recovery characteristics of the drain source diode of a power MOSFET. Committee(s): JC-25 Free download. Registration or login required.
ADDENDUM No. 2 to JESD24 - GATE CHARGE TEST METHOD Status: ReaffirmedOctober 2002	JESD24- 2	Jan 1991
This addendum establishes a method for measuring power device gate charge. A gate charge test is performed by driving the device gate with a constant current and measuring the resulting gate voltage response. Constant gate current scales the gate voltage, a function of time, to a function of coulombs. The slope of the generated response reflects the active device capacitance as it varies during the switching transition . Gate charge measurements are useful for characterizing the large signal switching performance of power MOS and IGBT devices. Developed over a four year span by the JEDEC JC-25 Committee, the method defines a repeatable means of measuring the widely published Qgd charge values. Committee(s): JC-25 Free download. Registration or login required.
ADDENDUM No. 11 to JESD24 - POWER MOSFET EQUIVALENT SERIES GATE RESISTANCE TEST METHOD: Status: ReaffirmedMarch 2001, October 2002	JESD24-11	Aug 1996
Test method to measure the equivalent resistance of the gate to source of a power MOSFET. Committee(s): JC-25 Free download. Registration or login required.

Standards & Documents Search

RANGES AND CONDITIONS FOR SPECIFYING BETA FOR LOW POWER, AUDIO FREQUENCY TRANSISTORS FOR ENTERTAINMENT SERVICE:

MEASUREMENT OF SMALL SIGNAL HF, VHF, AND UHF POWER GAIN OF TRANSISTORS

THERMAL RESISTANCE MEASUREMENTS OF CONDUCTION COOLED POWER TRANSISTORS:

STANDARD FOR THE MEASUREMENT OF CRE

THE MEASUREMENT OF TRANSISTOR NOISE FIGURE AT FREQUENCIES UP TO 20 kHz BY SINUSOIDAL SIGNAL-GENERATOR METHOD

THE MEASUREMENT OF TRANSISTOR EQUIVALENT NOISE VOLTAGE AND EQUIVALENT NOISE CURRENT AT FREQUENCIES OF UP TO 20 kHz

THE MEASUREMENT OF SMALL-SIGNAL VHF-UHF TRANSISTOR SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO:

THE MEASUREMENT OF SMALL-SIGNAL VHF-UHF TRANSISTOR ADMITTANCE PARAMETERS:

MEASUREMENT OF SMALL VALUES OF TRANSISTOR CAPACITANCE:

STANDARD FOR THE MEASUREMENT OF SMALL-SIGNAL TRANSISTOR SCATTERING PARAMETERS:

POWER MOSFET ELECTRICAL DOSE RATE TEST METHOD:

USER GUIDELINES FOR IR THERMAL IMAGING DETERMINATION OF DIE TEMPERATURE:

TEST PROCEDURES FOR VERIFICATION OF MAXIMUM RATINGS OF POWER TRANSISTORS:

PREFERRED LEAD CONFIGURATION FOR FIELD-EFFECT TRANSISTORS:

RECOMMENDED PRACTICE FOR MEASUREMENT OF TRANSISTOR LEAD TEMPERATURE:

POWER MOSFETS:

ADDENDUM No. 1 to JESD24 - METHOD FOR MEASUREMENT OF POWER DEVICE TURN-OFF SWITCHING LOSS:

ADDENDUM No. 10 to JESD24 - TEST METHOD FOR MEASUREMENT OF REVERSE RECOVERY TIME trr FOR POWER MOSFET DRAIN-SOURCE DIODES:

ADDENDUM No. 2 to JESD24 - GATE CHARGE TEST METHOD

ADDENDUM No. 11 to JESD24 - POWER MOSFET EQUIVALENT SERIES GATE RESISTANCE TEST METHOD:

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