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The Flip Chip Tensile Pull Test Method is performed to determine the fracture mode and strength of the solder bump interconnection between the flip chip die and the substrate. It should be used to assess the consistency of the chip join process. This test method is a destructive test.

Committee(s): JC-14.1

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This document, while establishing the complex nature of System Level ESD, proposes that an efficient ESD design can only be achieved when the interaction of the various components under ESD conditions are analyzed at the system level. This objective requires an appropriate characterization of the components and a methodology to assess the entire system using simulation data. This is applicable to system failures of different categories (such as hard, soft, and electromagnetic interference (EMI)). This type of systematic approach is long overdue and represents an advanced design approach which replaces the misconception, as discussed in detail in JEP161, that a system will be sufficiently robust if all components exceed a certain ESD level.

Committee(s): JC-14, JC-14.3

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This standard provides a method for determining solid state devices capability to withstand extreme temperature cycling. This standard applies to single-, dual- and triple-chamber temperature cycling and covers component and solder interconnection testing. It should be noted that this standard does not cover or apply to thermal shock chambers. This test is conducted to determine the ability of components and solder interconnects to withstand mechanical stresses induced by alternating high- and low-temperature extremes. Permanent changes in electrical and/or physical characteristics can result from these mechanical stresses.

Committee(s): JC-14.1

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This document identifies methods used for the characterization of die adhesion. It gives guidance which method to apply in which phase of the product or technology life cycle.

Committee(s): JC-14.1

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This standard establishes the requirements for timely notification to affected customers after a disaster has occurred at a supplier’s facility that will affect the committed delivery of product. This standard puts specific emphasis on notification, timing, and notification content which includes risk exposure, impact analysis, and recovery plans. This standard is applicable to suppliers of, and affected customers for, solid-state products and the constituent components used within.

Committee(s): JC-14.4

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This standard describes a nondestructive test to assess solid state device mark legibility. The specification applies only to solid state devices that contain markings, regardless of the marking method. It does not define what devices must be marked or the method in which the device is marked, i.e., ink, laser, etc. The standard is limited in scope to the legibility requirements of solid state devices, and does not replace related reference documents listed in this standard.

Committee(s): JC-14.1

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The purpose of this publication is to provide an overview of some of the most commonly used systems and test methods historically performed by manufacturers to assess and qualify the reliability of solid state products. The appropriate references to existing and proposed JEDEC (or EIA) standards and publications are cited. This document is also intended to provide an educational background and overview of some of the technical and economic factors associated with assessing and qualifying microcircuit reliability.

Committee(s): JC-14, JC-14.3

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These guidelines apply to GaAs Monolithic Microwave Integrated Circuits (MMICs) and their individual component building blocks, such as GaAs Metal-Semiconductor Field Effect Transistors (MESFETs), Pseudomorphic High Electron Mobility Transistors (PHEMTs), Heterojunction Bipolar Transistors (HBTs), resistors, and capacitors.  While the procedure described in this document may be applied to other semiconductor technologies, especially those used in RF and microwave frequency analog applications, it is primarily intended for technologies based on GaAs and related III-V material systems (InP, AlGaAs, InGaAs, InGaP, GaN, etc). 

Committee(s): JC-14.7

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This stress test is intended to determine the ability of an EEPROM integrated circuit or an integrated circuit with an EEPROM module (such as a microprocessor) to sustain repeated data changes without failure (program/erase endurance) and to retain data for the expected life of the EEPROM (data retention). This Standard specifies the procedural requirements for performing valid endurance and retention tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or may be developed using knowledge-based methods as in JESD94.

Committee(s): JC-14.1

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