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This document identifies methods used for the characterization of die adhesion. It gives guidance which method to apply in which phase of the product or technology life cycle.

Committee(s): JC-14.1

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This Test Method establishes an industry standard preconditioning flow for nonhermetic solid state SMDs (surface mount devices) that is representative of a typical industry multiple solder reflow operation. These SMDs should be subjected to the appropriate preconditioning sequence of this document by the semiconductor manufacturer prior to being submitted to specific in-house reliability testing (qualification and reliability monitoring) to evaluate long term reliability (which might be impacted by solder reflow).

Committee(s): JC-14.1

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The power and temperature cycling test is performed to determine the ability of a device to withstand alternate exposures at high and low temperature extremes and simultaneously the operating biases are periodically applied and removed. It is intended to simulate worst case conditions encountered in application environments. The power and temperature cycling test is considered destructive and is only intended for device qualification. This test method applies to semiconductor devices that are subjected to temperature excursions and required to power on and off during all temperatures.

Committee(s): JC-14, JC-14.1

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Device and Subassembly Mechanical Shock Test Method is intended to evaluate devices in the free state and assembled to printed wiring boards for use in electrical equipment. The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. The use of subassemblies is a means to test devices in usage conditions as assembled to printed wiring boards. Mechanical Shock due to suddenly applied forces, or abrupt change in motion produced by handling, transportation or field operation may disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification.This document also replaces JESD22-B104.

Committee(s): JC-14, JC-14.1

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These guidelines apply to GaAs Monolithic Microwave Integrated Circuits (MMICs) and their individual component building blocks, such as GaAs Metal-Semiconductor Field Effect Transistors (MESFETs), Pseudomorphic High Electron Mobility Transistors (PHEMTs), Heterojunction Bipolar Transistors (HBTs), resistors, and capacitors.  While the procedure described in this document may be applied to other semiconductor technologies, especially those used in RF and microwave frequency analog applications, it is primarily intended for technologies based on GaAs and related III-V material systems (InP, AlGaAs, InGaAs, InGaP, GaN, etc). 

Committee(s): JC-14.7

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This stress test is intended to determine the ability of an EEPROM integrated circuit or an integrated circuit with an EEPROM module (such as a microprocessor) to sustain repeated data changes without failure (program/erase endurance) and to retain data for the expected life of the EEPROM (data retention). This Standard specifies the procedural requirements for performing valid endurance and retention tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or may be developed using knowledge-based methods as in JESD94.

Committee(s): JC-14, JC-14.1

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This test method is intended for customers to determine the ability of a device to withstand the mechanical compressive static stress generated when a heat sink is being initially attached to the device, and to help the customer generate design rules for their heat sink design and validate their thermal solution. This test method does not assess the long-term effects of static stress.

Committee(s): JC-14.1

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This document describes transistor-level test and data methods for the qualification of semiconductor technologies. It does not give pass or fail values or recommend specific test equipment, test structures or test algorithms. Wherever possible, it references applicable JEDEC such as JESD47 or other widely accepted standards for requirements documentation.

Committee(s): JC-14.2

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This publication applies to electronic components and subassemblies product and or process development, manufacturing processes and the associated performance requirements in customer applications. These areas should include, but are not limited to: package design, chip design, process development, assembly, fabrication, manufacturing, materials, quality, service, and suppliers, as well as the process requirements needed for the next assembly.

Committee(s): JC-14.4

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This is a Joint Standard between ECIA, IPC, and JEDEC. The purpose of this specification is to establish an agreed to set of worst case solder assembly process conditions to which devices are evaluated. The generated PSL rating will convey the conditions to which a device can be safely attached to FR4 type or ceramic laminates using SMT reflow and solder wave/fountain soldering processes. It is important for device manufacturers (hereafter referred to as “suppliers”), users, and (PWB) assemblers to be highly familiar with this standard’s  information and processes to insure optimal device quality and reliability.

THIS DOCUMENT IS NOT AVAILABLE FOR FREE DOWNLOAD. However, this document is available to the JEDEC formulating Committee members on the JC-14 Resources tab on the Members' website. The lead organization is ECIA.

Committee(s): JC-14

The purpose of this test method is to identify the potential wave solder classification level of small plastic Surface Mount Devices (SMDs) that are sensitive to moisture-induced stress so that they can be properly packaged, stored, and handled to avoid subsequent mechanical damage during the assembly wave solder attachment and/or repair operations. This test method also provides a reliability preconditioning sequence for small SMDs that are wave soldered using full body immersion. This test method, may be used by users to determine what classification level should be used for initial board level reliability qualification.

Committee(s): JC-14, JC-14.1

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This standard applies to the identification and control of Maverick Product that can occur during fabrication, assembly, packaging, or test of any electronic component. It can be implemented for an entire product line or to segregate product that has a higher probability of adversely impacting quality or reliability.

Committee(s): JC-14, JC-14.3

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This document describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method may be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.

Committee(s): JC-14.2

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This fully revised test provides a means for determining the strength of gold and copper ball bonds to a die or package bonding surface, and may be performed on pre-encapsulation or post-encapsulation parts. Pictures have been added to enhance the fail mode diagrams. The wire bond shear test is destructive. The test method can also be used to shear aluminum and copper wedge bonds to a die or package bonding surface. It is appropriate for use in process development, process control and/or quality assurance.

Committee(s): JC-14, JC-14.1

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This test method provides various tests for determining the integrity lead/package interface and the lead itself when the lead(s) are bent due to faulty board assembly followed by rework of the part for reassembly. For hermetic packages it is recommend that this test be followed by hermeticity tests in accordance with Test Method A109 to determine if there are any adverse effects from the stresses applied to the seals as well as to the leads. These tests, including each of its test conditions, is considered destructive and is only recommended for qualification testing. This test is applicable to all through-hole devices and surface-mount devices requiring lead forming by the user.

Committee(s): JC-14, JC-14.1

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The Vibration, Variable Frequency Test Method is intended to determine the ability of component(s) to withstand moderate to severe vibration as a result of motion produced by transportation or filed operation of electrical equipment. This is a destructive test that is intended for component qualification. This is a minor editorial change to JESD22-B103B, June 2002 (Reaffirmed September 2010).

Committee(s): JC-14.1

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This publication provides a list of failure mechanisms and their associated activation energies or acceleration factors that may be used in making system failure rate estimations when the only available data is based on tests performed at accelerated stress test conditions. The method to be used is the Sum-of-the-Failure-Rates method. This publication also provides guidance in the selection of reliability modeling parameters, namely functional form, apparent thermal activation energy values and sensitivity to stresses such as power supply voltage, substrate current, current density, gate voltage, relative humidity, temperature cycling range, mobile ion concentration, etc.

Committee(s): JC-14.2

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This document describes a test method only; acceptance criteria and qualification requirements are not defined. This test method applies to solder ball pull force/energy testing prior to end-use attachment. Solder balls are pulled individually using mechanical jaws; force, fracture energy and failure mode data are collected and analyzed. Other specialized solder ball pull methods using a heated thermode, gang pulling of multiple solder joints, etc., are outside the scope of this document. Both low and high speed testing are covered by this document. This is a minor editorial revision to JESD22-A115A.

Committee(s): JC-14, JC-14.1

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The method described in this document applies to all application specific reliability testing for solid state components with known failure mechanisms where the test duration and conditions vary based on application variables. This document does not cover reliability tests that are characterization based or essentially go / no-go type tests, for example, ESD, latch-up, or electrical over stress. Also, it does not attempt to cover every failure mechanism or test environment, but does provide a methodology that can be extended to other failure mechanisms and test environments.

Committee(s): JC-14.3

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This test allows the user to evaluate the moisture resistance of nonhermetic packaged solid state devices. The Unbiased Autoclave Test is performed to evaluate the moisture resistance integrity of non-hermetic packaged solid state devices using moisture condensing or moisture saturated steam environments. It is a highly accelerated test that employs conditions of pressure, humidity and temperature under condensing conditions to accelerate moisture penetration through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors passing through it. This test is used to identify failure mechanisms internal to the package and is destructive.

Committee(s): JC-14.1

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This document is intended for use in the semiconductor IC manufacturing industry and provides reliability characterization techniques for low-k inter/intra level dielectrics (ILD) for the evaluation and control of ILD processes. It describes procedures developed for estimating the general integrity of back end-of-line (BEOL) ILD. Two basic test procedures are described, the Voltage-Ramp Dielectric Breakdown (VRDB) test, and the Constant Voltage Time-Dependent Dielectric Breakdown stress (CVS). Each test is designed for different reliability and process evaluation purposes. This document also describes robust techniques to detect breakdown and TDDB data analysis.

Committee(s): JC-14, JC-14.2

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The purpose of this test is conducted to assess the ability of solder balls to withstand mechanical shear forces that may be applied during device manufacturing, handling, test, shipment and end-use conditions. Solder ball shear is a destructive test.

Committee(s): JC-14, JC-14.1

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This standard is intended to identify a core set of qualification tests that apply specifically for Power Amplifier Modules and their primary application in mobile devices such as cellular phones. This standard is intended to describe specific stresses and failure mechanisms that are specific to compound semiconductors and power amplifier modules. It is intended to establish more meaningful and efficient qualification testing.

Committee(s): JC-14.7

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The material in this test method has been superseded by JS-002-2018, published January 2019, which in turn has been superseded by JS-002-2022, published January 2023.

Committee(s): JC-14, JC-14.1

This document gathers and organizes common standards and publications relating to quality processes and methods relating to the solid-state, microelectronics, and associated industries. This is intended to facilitate access to the applicable documents when working with electronic hardware. This will have a positive effect on quality and reliability as users gain more access to proper methods in designing, producing, and testing parts.

Committee(s): JC-14.4

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This stress method is used to determine the effects of RF bias conditions and temperature on Power Amplifier Modules (PAMs) over time. These conditions are intended to simulate the devices’ operating condition in an accelerated way, and they are expected to be applied primarily for device qualification and reliability monitoring. The purpose of this test is for use to determine the effects of nominal DC and RF bias conditions and high temperature on Power Amplifier Modules (PAMs) over time. It simulates the devices’ operating condition in an accelerated way, and is primarily intended for device qualification testing and reliability monitoring which stresses all of the modules’ thermal and electrical failure mechanisms anticipated in typical use.

Committee(s): JC-14.7

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This standard establishes procedures to notify customers of semiconductor product and process changes. Requirements include: documentation; procedures for classification, notification and customer response; content; and records. Documentation of a suppliers change notification system should set clear and understandable expectations for both the originators of the change and their end customers.

Committee(s): JC-14, JC-14.4

Testing for hermeticity on commercial product is not normally done on standard molded devices that are not hermetic. Commercial product that this test method applies to has a construction that produces a hermetic package; examples of this are ceramic and metal packages. Most of these tests are controlled and updated in the military standards, the two standards that apply are MIL-STD-750 for discretes, & MIL-STD-883 for microcircuits. The test within these standards can be used for all package types. Within these standards the tests are similar; MIL-STD-750 Test Method 1071 Hermetic Seal is recommended for any commercial hermetic requirements. For MIL-STD-883 the applicable test method is 1014 Seal.

Committee(s): JC-14.1

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This report is the first part of a two part document. Part I will primarily address hard failures characterized by physical damage to a system (failure category d as classified by IEC 61000-4-2). Soft failures, in which the system’s operation is upset without physical damage, are also critical and predominant in many cases.

Committee(s): JC-14, JC-14.3

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