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This publication is intended for power GaAs FET applications requiring high reliability. An accurate measurement of thermal resistance is extremely important to provide the user with knowledge of the FETs operating temperature so that more accurate life estimates can be made. FET failure mechanisms and failure rates have, in general, an exponential dependence on temperature (which is why temperature-accelerated testing is successful). Because of the exponential relationship of failure rate with temperature, the thermal resistance should be referenced to the hottest part of the FET.

Committee(s): JC-14.7

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Committee(s): JC-14, JC-14.1

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This document applies to the reliability qualification of new or changed silicon devices, and their materials or manufacturing processes. Does not address qualification of product quality or functionality. Provides an alternative to traditional stress-driven qualification.

Committee(s): JC-14.2

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JESD35-1 was rescinded by the committee in June 2024 and has been superseded by JESD263.

This addendum expands the usefulness of the Standard 35 (JESD35) by detailing the various sources of measurement error that could effect the test results obtained by the ramped tests described in JESD35. Each source of error is described and its implications on test structure design is noted. This addendum can be used as a guide when designing test structures for the qualification and characterization of thin oxide reliability, specifically, by implementing accelerated voltage or current ramp tests.

Committee(s): JC-14.2

This standard is to promote unification of content and format of semiconductor device failure-analysis reports so that reports from diverse laboratories may be easily read, compared, and understood by customers. Additional objectives are to ensure that reports can be easily ready by users, satisfactorily reproduced on copying machines, adequately transmitted by telefax, and conveniently stored in standard filing cabinets.

Committee(s): JC-14.4

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JESD35-2 was rescinded by the committee in June 2024 and has been superseded by JESD263.

This addendum includes test criteria to supplement JESD35. JESD35 describes procedures developed for estimating the overall integrity of thin oxides in the MOS Integrated Circuit manufacturing industry. Two test procedures are included in JESD35: a Voltage-Ramp (V-Ramp) and a Current-Ramp (J-Ramp). As JESD35 became implemented into production facilities on a variety of test structures and oxide attributes, a need arose to clarify end point determination and point out some of the obstacles that could be overcome by careful characterization of the equipment and test structures.

Committee(s): JC-14.2

This guide has been replaced by JESD241: September 2021.

Committee(s): JC-14.2

Committee(s): JC-14.4

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The purpose of this Guideline is to provide a vehicle for acquiring and transmitting the necessary information in a concise, organized, and consistent format. Included in the Guideline is a sample form that facilitates transferring the maximum amount of background data to the failure analyst in a readily interpretable format. Immediate availability of this key information assists that analyst in completing a timely and accurate failure analysis.

Committee(s): JC-14.4

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Signature Analysis is a method to reduce the number of comprehensive physical failure analyses by the application of statistical inference techniques. The purpose of this document is to promote a common definition of Signature Analysis by inference, using the same statistical techniques, and to recognize that it is formal means of doing failure analysis.

Committee(s): JC-14.4

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This document describes a constant temperature (isothermal) aging method for testing aluminum (Al) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding. This method is valid for metallization/dielectric systems in which the dielectric is deposited onto the metallization at a temperature considerably above the intended use temperature, and above or equal to the deposition temperature of the metal. Although this is a wafer test, it is not a fast (less than 5 minutes per probe) test. It is intended to be used for lifetime prediction and failure analysis, not for production Go-NoGo lot checking.

Committee(s): JC-14.2

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This addendum provides data analysis examples useful in analyzing MOSFET n-channel hot-carrier-induced degradation data. This addendum to JESD28 (Hot carrier n-channel testing standard) suggests hot-carrier data analysis techniques.

Committee(s): JC-14.2

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Relevant JESD62 content has been consolidated into JESD50B, published October 2008 -Special Requirments for Maverick Product Elimination-.

Committee(s): JC-14.3

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At the request of IPC, J-STD-002B has been removed from the free download area. In its place, JEDEC's Test Method, JESD22-B102, Solderability, which includes lead-free, was made available until it was replaced by J-STD-002D. 

Any revision to J-STD-002 will no longer be available for free to the industry on the JEDEC website. However, the document is available to the JEDEC formulating Committee members, in the Members Area. 

If you are not a JEDEC member you may wish to try the IPC website or one of the resellers listed at: http://www.jedec.org/standards-document

Committee(s): JC-13, JC-14.1

This document describes an algorithm for performing the Standard Wafer Level Electromigration Accelerated Test (SWEAT) method with computer controlled instrumentation. The algorithm requires a separate iterative technique (not provided) to calculate the force current for a given target time to failure. This document does not specify what test structure to use with this procedure. However, users of this algorithm report its effectiveness on both straight-lines and via-terminated test structures. Some test-structures design features are provided in JESD87 and in ASTM 1259M - 96.

Committee(s): JC-14.2

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This newly revised test method provides a procedure for measuring the temperature coefficient of resistance, TCR(T), of thin-film metallizations used in microelectronic circuits and devices. Procedures are also provided to use the TCR(T) to determine the temperature of a metallization line under Joule-heating conditions and to determine the ambient temperature where the metallization line is used as a temperature sensor. Originally, the method was intended only for aluminum-based metallizations and for other metallizations that satisfy the linear dependence and stability stipulations of the method. The method has been revised to make it explicitly applicable to copper-based metallizations, as well, and at temperatures beyond where the resistivity of copper is no longer linearly dependent on temperature (beyond approximately 200 °C). Using the TCR(T) measured for copper in the linear-dependent region, a factor is used to correct the calculated temperature at these higher temperatures.

Committee(s): JC-14.2

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This publication specifies a common method of establishing the fracture resistance of board-level device interconnects to flexural loading during non-cyclic board assembly and test operations. Monotonic bend test qualification pass/fail requirements are typically specific to each device application and are outside the scope of this document. This version contains Addendum 1, May 2015, reposted 8/15/2016.

Committee(s): JC-14.1

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This document hasbeen replaced by JESD241, September 2021.

Committee(s): JC-14, JC-14.2

The purpose of this guide establishes the materials and substances to be disclosed by suppliers when those materials and substances are present in products and subparts that are incorporated into EEE. It benefits suppliers and their commercial customers by providing consistency and efficiency to the material declaration process. It promotes the development of consistent data exchange formats and tools that will facilitate and improve data transfer along the entire global supply chain.

Committee(s): JC-14

This is an accelerated stress test method for determining sample estimates and their confidence limits of the median-time-to-failure, sigma, and early percentile of a log-Normal distribution, which are used to characterize the electromigration failure-time distribution of equivalent metal lines subjected to a constant current-density and temperature stress. Failure is defined as some pre-selected fractional increase in the resistance of the line under test. Analysis procedures are provided to analyze complete and singly, right-censored failure-time data. Sample calculations for complete and right-censored data are provided in Annex A. The analyses are not intended for the case when the failure distribution cannot be characterized by a single log-Normal distribution.

Committee(s): JC-14, JC-14.2

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This standard describes an algorithm for the execution of the isothermal test, using computer-controlled instrumentation. The primary use of this test is for the monitoring of microelectronic metallization lines at wafer level (1) in process development, to evaluate process options, (2) in manufacturing, to monitor metallization reliability and (3) to monitor/evaluate process equipment. While it is developed as a fast WLR test, it can also be an effective tool for complementing the reliability data obtained through the standard package level electromigration test.

Committee(s): JC-14, JC-14.2

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The predominant terminal finishes on electronic components have been Sn-Pb alloys. As the industry moves toward Pb-free components and assembly processes, the predominant terminal finish materials will be pure Sn and alloys of Sn, including Sn-Bi and Sn-Ag Pure Sn and Sn-based alloy electrodeposits and solder-dipped finishes may grow tin whiskers, which could electrically short across component terminals or break off the component and degrade the performance of electrical or mechanical parts.

Committee(s): JC-14, JC-14.1

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This test method establishes a standard procedure for testing and classifying microcircuits according to their susceptibility to damage or degradation by exposure to a defined electrostatic Human Body Model (HBM) discharge (ESD). The objective is to provide reliable, repeatable HBM ESD test results so that accurate classifications can be performed.

Committee(s): JC-14.1

This standard is intended to describe various methods for obtaining electrical variate data on devices currently produced on the manufacturing and testing process to be qualified. The intent is to assess the device's capability to function within the specification parameters over time and the application environment (operating range of temperature, voltage, humidity, input/output levels, noise, power supply stability etc.).

Committee(s): JC-14.3

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The purpose of this test is to measure the deviation of the terminals (leads or solder balls) from coplanarity at room temperature for surface-mount semiconductor devices. This test method is applicable for inspection and device characterization. If package warpage or coplanarity is to be characterized at reflow soldering temperatures, then JESD22-B112 should be used.

Committee(s): JC-14, JC-14.1

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This report is the first part of a two part document. Part I will primarily address hard failures characterized by physical damage to a system (failure category d as classified by IEC 61000-4-2). Soft failures, in which the system’s operation is upset without physical damage, are also critical and predominant in many cases.

Committee(s): JC-14, JC-14.3

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Testing for hermeticity on commercial product is not normally done on standard molded devices that are not hermetic. Commercial product that this test method applies to has a construction that produces a hermetic package; examples of this are ceramic and metal packages. Most of these tests are controlled and updated in the military standards, the two standards that apply are MIL-STD-750 for discretes, & MIL-STD-883 for microcircuits. The test within these standards can be used for all package types. Within these standards the tests are similar; MIL-STD-750 Test Method 1071 Hermetic Seal is recommended for any commercial hermetic requirements. For MIL-STD-883 the applicable test method is 1014 Seal.

Committee(s): JC-14.1

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This standard establishes procedures to notify customers of semiconductor product and process changes. Requirements include: documentation; procedures for classification, notification and customer response; content; and records. Documentation of a suppliers change notification system should set clear and understandable expectations for both the originators of the change and their end customers.

Committee(s): JC-14, JC-14.4

This stress method is used to determine the effects of RF bias conditions and temperature on Power Amplifier Modules (PAMs) over time. These conditions are intended to simulate the devices’ operating condition in an accelerated way, and they are expected to be applied primarily for device qualification and reliability monitoring. The purpose of this test is for use to determine the effects of nominal DC and RF bias conditions and high temperature on Power Amplifier Modules (PAMs) over time. It simulates the devices’ operating condition in an accelerated way, and is primarily intended for device qualification testing and reliability monitoring which stresses all of the modules’ thermal and electrical failure mechanisms anticipated in typical use.

Committee(s): JC-14.7

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