Global Standards for the Microelectronics Industry
Standards & Documents Search
Title | Document # | Date |
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CONSTANT-TEMPERATURE AGING METHOD TO CHARACTERIZE COPPER INTERCONNECT METALLIZATIONS FOR STRESS-INDUCED VOIDING |
JESD214.01 | Aug 2017 |
This document describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method may be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time. Committee(s): JC-14.2 Free download. Registration or login required. |
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ELECTROSTATIC DISCHARGE (ESD) SENSITIVITY TESTING HUMAN BODY MODEL (HBM)Status: Supersededby ANSI/ESDA/JEDEC JS-001, April 2010. |
JESD22-A114F | Dec 2008 |
This test method establishes a standard procedure for testing and classifying microcircuits according to their susceptibility to damage or degradation by exposure to a defined electrostatic Human Body Model (HBM) discharge (ESD). The objective is to provide reliable, repeatable HBM ESD test results so that accurate classifications can be performed. Committee(s): JC-14.1 |
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APPLICATION SPECIFIC QUALIFICATION USING KNOWLEDGE BASED TEST METHODOLOGYStatus: Reaffirmed January 2021 |
JESD94B | Oct 2015 |
The method described in this document applies to all application specific reliability testing for solid state components with known failure mechanisms where the test duration and conditions vary based on application variables. This document does not cover reliability tests that are characterization based or essentially go / no-go type tests, for example, ESD, latch-up, or electrical over stress. Also, it does not attempt to cover every failure mechanism or test environment, but does provide a methodology that can be extended to other failure mechanisms and test environments. Committee(s): JC-14.3 Free download. Registration or login required. |
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HIGH TEMPERATURE STORAGE LIFE |
JESD22-A103E.01 | Jul 2021 |
The test is applicable for evaluation, screening, monitoring, and/or qualification of all solid state devices. The high temperature storage test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure mechanisms and time-to failure distributions of solid state electronic devices, including nonvolatile memory devices (data retention failure mechanisms). Thermally activated failure mechanisms are modeled using the Arrhenius Equation for acceleration. During the test, accelerated stress temperatures are used without electrical conditions applied. This test may be destructive, depending on time, temperature and packaging (if any). Committee(s): JC-14.1 Available for purchase: $55.00 Add to Cart Paying JEDEC Members may login for free access. |
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EXTERNAL VISUAL |
JESD22-B101D | Apr 2022 |
External visual inspection is an examination of the external surfaces, construction, marking, and workmanship of a finished package or component. External visual is a noninvasive and nondestructive test. It is functional for qualification, quality monitoring, and lot acceptance. Committee(s): JC-14.1 Free download. Registration or login required. |
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LOW TEMPERATURE STORAGE LIFEStatus: Reaffirmed May 2021 |
JESD22-A119A | Oct 2015 |
The test is applicable for evaluation, screening, monitoring, and/or qualification of all solid state devices Low Temperature storage test is typically used to determine the effect of time and temperature, under storage conditions, for thermally activated failure mechanisms of solid state electronic devices, including nonvolatile memory devices (data retention failure mechanisms). During the test reduced temperatures (test conditions) are used without electrical stress applied. This test may be destructive, depending on Time, Temperature and Packaging (if any). Committee(s): JC-14.1 Free download. Registration or login required. |
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PRECONDITIONING OF NONHERMETIC SURFACE MOUNT DEVICES PRIOR TO RELIABILITY TESTING |
JESD22-A113I | Apr 2020 |
This Test Method establishes an industry standard preconditioning flow for nonhermetic solid state SMDs (surface mount devices) that is representative of a typical industry multiple solder reflow operation. These SMDs should be subjected to the appropriate preconditioning sequence of this document by the semiconductor manufacturer prior to being submitted to specific in-house reliability testing (qualification and reliability monitoring) to evaluate long term reliability (which might be impacted by solder reflow). Committee(s): JC-14.1 Free download. Registration or login required. |
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SOLDERABILITY TESTS FOR COMPONENT LEADS, TERMINATIONS, LUGS, TERMINALS AND WIRES:Removed 01/21/04 Release Number: B |
J-STD-002 | Feb 2003 |
At the request of IPC, J-STD-002B has been removed from the free download area. In its place, JEDEC's Test Method, JESD22-B102, Solderability, which includes lead-free, was made available until it was replaced by J-STD-002D.
Any revision to J-STD-002 will no longer be available for free to the industry on the JEDEC website. However, the document is available to the JEDEC formulating Committee members, in the Members Area.
If you are not a JEDEC member you may wish to try the IPC website or one of the resellers listed at: http://www.jedec.org/standards-document |
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Test Procedure for the Measurement of Terrestrial Cosmic Ray Induced Destructive Effects in Power Semiconductor Devices |
JEP151A | Jan 2022 |
This test method defines the requirements and procedures for terrestrial destructive* single-event effects (SEE) for example, single-event breakdown (SEB), single-event latch-up (SEL) and single-event gate rupture (SEGR) testing . It is valid when using an accelerator, generating a nucleon beam of either; 1) Mono-energetic protons or mono-energetic neutrons of at least 150 MeV energy, or 2) Neutrons from a spallation spectrum with maximum energy of at least 150 MeV. This test method does not apply to testing that uses beams with particles heavier than protons. *This test method addresses a separate risk than does JESD89 tests for non-destructive SEE due to cosmic radiation effects on terrestrial applications.
Committee(s): JC-14.1 Free download. Registration or login required. |
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PROCEDURE FOR WAFER-LEVEL DC CHARACTERIZATION OF BIAS TEMPERATURE INSTABILITIESStatus: Reaffirmed September 2021 |
JESD241 | Dec 2015 |
This Bias Temperature Instability (BTI) stress/test procedure is proposed to provide a minimum recommendation for a simple and consistent comparison of the mean threshold voltage (Vth) BTI induced shift. The procedure enables comparison of stable and manufacturable CMOS processes and technologies in which the process variation is low and the yield is mature. Qualification and accept-reject criteria are not given in this document. Committee(s): JC-14.2 Free download. Registration or login required. |
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IC LATCH-UP TEST |
JESD78F.02 | Nov 2023 |
This standard establishes the procedure for testing, evaluation and classification of devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined latch-up stress. This standard has been adopted by the Defense Logistics Agency (DLA) as project 5962-1880. Free download. Registration or login required. |
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Marking, Symbols, and Labels of Leaded and Lead-Free Terminal Finished Materials Used in Electronic Assembly |
J-STD-609C.01 | Apr 2024 |
This standard applies to components and assemblies that contain Pb-free and Pb-containing solders and finishes, and it describes the marking and labeling of their shipping containers to identify their 2nd level terminal finish or material. Free download. Registration or login required. |
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SOLDERABILITYStatus: Rescinded 2014, this document has been replaced by J-STD-002D. |
JESD22-B102E | Oct 2007 |
This test method provides optional conditions for preconditioning and soldering for the purpose of assessing the solderability of device package terminations. It provides procedures for dip & look solderability testing of through hole, axial and surface mount devices and a surface mount process simulation test for surface mount packages. The purpose of this test method is to provide a means of determining the solderability of device package terminations that are intended to be joined to another surface using lead (Pb) containing or Pb-free solder for the attachment. Committee(s): JC-14.1 |
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HIGHLY ACCELERATED TEMPERATURE AND HUMIDITY STRESS TEST (HAST) |
JESD22-A110E.01 | May 2021 |
The purpose of this test method is to evaluate the reliability of nonhermetic packaged solid state devices in humid environments. It employs severe conditions of temperature, humidity, and bias that accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors which pass through it. This is a minor editorial edit to JESD22A110E, July 2015 approved by the formulating committee. Committee(s): JC-14.1 Free download. Registration or login required. |
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PHYSICAL DIMENSION:Status: ReaffirmedJune 2006, January 2016, September 2021 |
JESD22-B100B | Jun 2003 |
The standard provides a method for determining whether the external physical dimensions of the device are in accordance with the applicable procurement document. This revision includes a change in details to be specified by the procurement document. Committee(s): JC-14.1 Free download. Registration or login required. |
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Power Cycling |
JESD22-A122B | Nov 2023 |
This Test Method establishes a uniform method for performing solid state device package power cycling stress test. Free download. Registration or login required. |
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SOLDER BALL PULLStatus: Reaffirmed September 2021 |
JESD22-B115A.01 | Jul 2016 |
This document describes a test method only; acceptance criteria and qualification requirements are not defined. This test method applies to solder ball pull force/energy testing prior to end-use attachment. Solder balls are pulled individually using mechanical jaws; force, fracture energy and failure mode data are collected and analyzed. Other specialized solder ball pull methods using a heated thermode, gang pulling of multiple solder joints, etc., are outside the scope of this document. Both low and high speed testing are covered by this document. This is a minor editorial revision to JESD22-A115A. Free download. Registration or login required. |
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COPLANARITY TEST FOR SURFACE-MOUNT SEMICONDUCTOR DEVICESStatus: Reaffirmed February 2023 |
JESD22-B108B | Sep 2010 |
The purpose of this test is to measure the deviation of the terminals (leads or solder balls) from coplanarity at room temperature for surface-mount semiconductor devices. This test method is applicable for inspection and device characterization. If package warpage or coplanarity is to be characterized at reflow soldering temperatures, then JESD22-B112 should be used. Free download. Registration or login required. |
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SEMICONDUCTOR WAFER AND DIE BACKSIDE EXTERNAL VISUAL INSPECTION |
JESD22-B118A | Nov 2021 |
This inspection method is for product semiconductor wafers and dice prior to assembly. This test method defines the requirements to execute a standardized external visual inspection and is a non-invasive and nondestructive examination that can be used for qualification, quality monitoring, and lot acceptance. Committee(s): JC-14.1 Free download. Registration or login required. |
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IPC/JEDEC-9702: MONOTONIC BEND CHARACTERIZATION OF BOARD-LEVEL INTERCONNECTS (IPC/JEDEC-9702) |
JS9702 | Jun 2004 |
This publication specifies a common method of establishing the fracture resistance of board-level device interconnects to flexural loading during non-cyclic board assembly and test operations. Monotonic bend test qualification pass/fail requirements are typically specific to each device application and are outside the scope of this document. This version contains Addendum 1, May 2015, reposted 8/15/2016. Committee(s): JC-14.1 Free download. Registration or login required. |
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SYSTEM LEVEL ESD PART 1: COMMON MISCONCEPTIONS AND RECOMMENDED BASIC APPROACHESStatus: ReaffirmedApril 2023 |
JEP161 | Jan 2011 |
This report is the first part of a two part document. Part I will primarily address hard failures characterized by physical damage to a system (failure category d as classified by IEC 61000-4-2). Soft failures, in which the system’s operation is upset without physical damage, are also critical and predominant in many cases. Free download. Registration or login required. |
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CUSTOMER NOTIFICATION STANDARD FOR PRODUCT/PROCESS CHANGES BY ELECTRONIC PRODUCT SUPPLIERS |
J-STD-046 | Jul 2016 |
This standard is applicable to suppliers of, and affected customers for, electronic products and their constituent components. This standard establishes the requirements for timely customer notification of changes to electronic products and associated processes. This document replaces JESD46. Committee(s): JC-14.4 Free download. Registration or login required. |
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UNDERSTANDING ELECTRICAL OVERSTRESS - EOSStatus: Reaffirmed May 2022 |
JEP174 | Sep 2016 |
This purpose of this white paper will be to introduce a new perspective about EOS to the electronics industry. As failures exhibiting EOS damage are commonly experienced in the industry, and these severe overstress events are a factor in the damage of many products, the intent of the white paper is to clarify what EOS really is and how it can be mitigated once it is properly comprehended. Committee(s): JC-14.3 Free download. Registration or login required. |
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STRESS-TEST-DRIVEN QUALIFICATION OF INTEGRATED CIRCUITS |
JESD47L | Dec 2022 |
This standard describes a baseline set of acceptance tests for use in qualifying electronic components as new products, a product family, or as products in a process which is being changed. Available for purchase: $87.38 Add to Cart Paying JEDEC Members may login for free access. |
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VIBRATION, VARIABLE FREQUENCY |
JESD22-B103B.01 | Sep 2016 |
The Vibration, Variable Frequency Test Method is intended to determine the ability of component(s) to withstand moderate to severe vibration as a result of motion produced by transportation or filed operation of electrical equipment. This is a destructive test that is intended for component qualification. This is a minor editorial change to JESD22-B103B, June 2002 (Reaffirmed September 2010). Committee(s): JC-14.1 Free download. Registration or login required. |
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FAILURE MECHANISMS AND MODELS FOR SEMICONDUCTOR DEVICES |
JEP122H | Sep 2016 |
This publication provides a list of failure mechanisms and their associated activation energies or acceleration factors that may be used in making system failure rate estimations when the only available data is based on tests performed at accelerated stress test conditions. The method to be used is the Sum-of-the-Failure-Rates method. This publication also provides guidance in the selection of reliability modeling parameters, namely functional form, apparent thermal activation energy values and sensitivity to stresses such as power supply voltage, substrate current, current density, gate voltage, relative humidity, temperature cycling range, mobile ion concentration, etc. Committee(s): JC-14.2 Available for purchase: $163.00 Add to Cart Paying JEDEC Members may login for free access. |
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DISCONTINUING USE OF THE MACHINE MODEL FOR DEVICE ESD QUALIFICATIONStatus: Reaffirmed September 2020 |
JEP172A | Jul 2015 |
Over the last several decades the so called "machine model" (aka MM) and its application to the required ESD component qualification has been grossly misunderstood. The scope of this JEDEC document is to present evidence to discontinue use of this particular model stress test without incurring any reduction in the IC component's ESD reliability for manufacturing. In this regard, the document's purpose is to provide the necessary technical arguments for strongly recommending no further use of this model for IC qualification. The published document should be used as a reference to propagate this message throughout the industry. Committee(s): JC-14.3 Free download. Registration or login required. |
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ELECTROSTATIC DISCHARGE (ESD) SENSITIVITY TESTING MACHINE MODEL (MM)This document is inactive as of September 2016 |
JESD22-A115C | Nov 2010 |
JESD22-A115 is a reference document; it is not a requirement per JESD47 (Stress Test Driven Qualification of Integrated Circuits). Machine Model (MM) as described in JESD22-A115 should not be used as a requirement for integrated circuit ESD qualification. Only human-body model (HBM) and charged-device model (CDM) are the necessary ESD qualification test methods as specified in JESD47. Refer to JEP172: Discontinuing Use of the Machine Model for Device ESD Qualification for more information. Committee(s): JC-14.1 |
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JOINT JEDEC/ESDA STANDARD FOR ELECTROSTATIC DISCHARGE SENSITIVITY TEST - HUMAN BODY MODEL (HBM) - DEVICE LEVEL |
JS-001-2024 | Oct 2024 |
This standard establishes the procedure for testing, evaluating, and classifying components and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The purpose (objective) of this standard is to establish a test method that will replicate HBM failures and provide reliable, repeatable HBM ESD test results from tester to tester, regardless of component type. Repeatable data will allow accurate classifications and comparisons of HBM ESD sensitivity levels. NOTE Data previously generated with testers meeting all waveform criteria of ANSI/ESD STM5.1-2007 or JESD22A-114F shall be considered valid test data. Also available JTR-001-01-12: User Guide of ANSI/ESDA/JEDEC JS-001, Human Body Model Testing of Integrated Circuits Free download. Registration or login required. |
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ESDA/JEDEC JOINT STANDARD FOR ELECTROSTATIC DISCHARGE SENSITIVITY TESTING – CHARGED DEVICE MODEL (CDM) – DEVICE LEVEL |
JS-002-2022 | Jun 2023 |
This standard establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this standard. This test method combines the main features of JEDEC JESD22-C101 and ANSI/ESD S5.3.1. Free download. Registration or login required. |
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ADAPTER TEST BOARD RELIABILITY TEST GUIDELINES |
JEP176 | Jan 2018 |
This publication describes guidelines for applying JEDEC reliability tests and recommended testing procedures to integrated circuits that require adapter test boards for electrical and Committee(s): JC-14.3 Free download. Registration or login required. |
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FOUNDRY PROCESS QUALIFICATION GUIDELINES - FRONT END TRANSISTOR LEVEL (Wafer Fabrication Manufacturing Sites) |
JEP001-2A | Sep 2018 |
This document describes transistor-level test and data methods for the qualification of semiconductor technologies. It does not give pass or fail values or recommend specific test equipment, test structures or test algorithms. Wherever possible, it references applicable JEDEC such as JESD47 or other widely accepted standards for requirements documentation. Committee(s): JC-14.2 Free download. Registration or login required. |
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Foundry Process Qualification Guidelines – Technology Qualification Vehicle Testing (Wafer Fabrication Manufacturing Sites) |
JEP001-3B | Sep 2024 |
The publication provides methodologies for measurements to qualify a new semiconductor wafer process. Free download. Registration or login required. |
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MECHANICAL COMPRESSIVE STATIC STRESS TEST METHOD |
JESD22-B119 | Oct 2018 |
This test method is intended for customers to determine the ability of a device to withstand the mechanical compressive static stress generated when a heat sink is being initially attached to the device, and to help the customer generate design rules for their heat sink design and validate their thermal solution. This test method does not assess the long-term effects of static stress. Committee(s): JC-14.1 Free download. Registration or login required. |
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Numerical Analysis Guidelines for Microelectronics Packaging Design and Reliability |
IPC/JEDEC9301-2018 | Dec 2018 |
This document is an effort to standardize and document some of the basic tenets of a typical Finite Element Analysis (FEA) model. The intent of this document is to help educate new designers (and in some cases even experienced designers) on the basic information and best practices that should be captured and provided to technical reviewers of the results of FEA data. Committee(s): JC-14.1 Free download. Registration or login required. |
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ELECTROSTATIC DISCHARGE (ESD) SENSITIVITY TESTING – REPORTING ESD WITHSTAND LEVELS ON DATASHEETS |
JEP178 | Apr 2021 |
This document is intended to guide device manufacturers in developing datasheets and to device customers in understanding datasheet entries. Committee(s): JC-14.3 Free download. Registration or login required. |
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COPY-EXACT PROCESS FOR MANUFACTURING |
JEP185 | Aug 2021 |
This publication defines the requirements for Copy-Exact Process (CEP) matching, real-time process control, monitoring, and ongoing assessment of the CEP. The critical element requirements for inputs, process controls, procedures, process indicators, human factors, equipment/infrastructure and matching outputs are given. Manufacturers, suppliers and their customers may use these methods to define requirements for process transfer within the constraints of their business agreements. Committee(s): JC-14.3 Free download. Registration or login required. |
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TEST METHOD FOR ESTABLISHING X-RAY TOTAL DOSE LIMIT FOR DRAM DEVICES |
JESD22-B130 | Sep 2022 |
This test method is offered as a standardized procedure to determine the total dose limit of DRAMs by measuring its refresh time tRef degradation after the device is irradiated with an X-Ray dose. This test method is applicable to any packaged device that contains a DRAM die or any embedded DRAM structure. Some indirect test methods such as wafer level characterization of total dose induced changes in leakage of access transistors are not described in this standard but are permissible as long as a good correlation is established. Committee(s): JC-14.1 Free download. Registration or login required. |
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SYSTEM LEVEL ESD Part III: Review of ESD Testing and Impact on System-Efficient ESD Design (SEED) |
JEP164 | Oct 2022 |
This white paper presents the recent knowledge of system ESD field events and air discharge testing methods. Testing experience with the IEC 61000-4-2 (2008) and the ISO 10605 ESD standards has shown a range of differing interpretations of the test method and its scope. This often results in misapplication of the test method and a high test result uncertainty. This white paper aims to explain the problems observed and to suggest improvements to the ESD test standard and to enable a correlation with a SEED IC/PCB co-design methodology. Committee(s): JC-14.3 Free download. Registration or login required. |
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Customer Notification for Environmental Compliance Declaration Deviations |
JESD262 | Nov 2022 |
This standard is invoked when a supplier becomes aware that a product’s environmental compliance declaration they provided or made available to their customers had an error that might cause a customer to draw an incorrect conclusion about the compliance of the product to legal requirements. Committee(s): JC-14.4 Free download. Registration or login required. |
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Wire Bond Pull Test Methods |
JESD22-B120.01 | Sep 2024 |
This test method provides a means for determining the strength and failure mode of a wire bonded to, and the corresponding interconnects on, a die or package bonding surface and may be performed on pre-encapsulation or post-encapsulation devices. Free download. Registration or login required. |
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Survey On Latch-Up Testing Practices and Recommendations for Improvements |
JEP193 | Jan 2023 |
This is a re-publication of a white paper which reports on a survey that has been conducted to better understand how the latch-up standard JESD78 revision E (JESD78E) is interpreted and has been used in the industry. Free download. Registration or login required. |
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Joint ESDA/JEDEC - CDM Technical User Guide |
JTR002-01-22 | Jan 2023 |
This report only covers the procedures and requirements specified in ANSI/ESDA/JEDEC JS-002. Free download. Registration or login required. |
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Part Model Assembly Process Classification Guidelines for Electronic-Device Packages – XML Requirements |
JEP30-A100B | Aug 2024 |
This standard establishes the requirements for exchanging part data between part manufacturers and their customers for electrical and electronic products. This standard applies to all forms of electronic parts. It forms part of the Part Model XML Schema, which covers the parental structure for the electrical, physical, thermal, assembly process classification data along with materials and substances that may be present in the supplied product or subproducts. This Guideline specifically focuses on the “Assembly Process Classification” subsection of the Part Model. For more information visit the main JEP30 webpage. Committee(s): JC-11, JC-11.2, JC-14.4 Free download. Registration or login required. |
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Part Model Supply Chain Guidelines for Electronic-Device Packages – XML Requirements |
JEP30-S100A.01 | Nov 2024 |
This standard establishes the requirements for exchanging part data between part manufacturers and their customers for electrical and electronic products. This standard applies to all forms of electronic parts. It forms part of the Part Model XML Schema, which covers the parental structure for the electrical, physical, supply chain, assembly process classification data along with materials and substances that may be present in the supplied product or sub-products. This Guideline specifically focuses on the SupplyChain sub-section of the Part Model. For more information visit the main JEP30 webpage. Committee(s): JC-11, JC-11.2, JC-14.4 Free download. Registration or login required. |
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A Case for Lowering Component-level CDM ESD Specifications and Requirements Part II: Die-to-Die Interfaces |
JEP196 | Nov 2023 |
This white paper presents an industry-wide survey on the relevance of industry-aligned D2D CDM targets and the currently used targets for D2D interfaces. Free download. Registration or login required. |
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Test Method for Total Ionizing Dose (TID) from X-ray Exposure in Terrestrial Applications |
JESD22-B121 | Nov 2023 |
This test method covers X-ray imaging for terrestrial applications on packaged devices. Free download. Registration or login required. |
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Gate Dielectric Breakdown |
JESD263 | Mar 2024 |
This document describes procedures developed for estimating the overall integrity of gate dielectrics. JESD263 supersedes these other 4 standards: JESD35A, JESD35-1 ADDENDUM, JESD35-2 and JESD92. Free download. Registration or login required. |
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Procedure for Reliability Characterization of Metal-Insulator-Metal Capacitors |
JEP199 | Apr 2024 |
This document defines the standards for achieving Reliability certification and qualification of on-chip MIM Capacitors and MIS Trench Capacitors. Free download. Registration or login required. |
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PART MODEL SCHEMAS |
JEP30-10v7-0-0 | Nov 2024 |
This download includes all files under the parent schema JEP30-10v7-0-0 (Committees: JC-11, JC-11.2) including:
This will enable the user to validate the schemas. For more information visit the main JEP30 webpage. Committee(s): JC-11, JC-11.2, JC-14, JC-15, JC-16 Free download. Registration or login required. |
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