Global Standards for the Microelectronics Industry
Standards & Documents Search
| Title | Document # | Date |
|---|---|---|
SIGNATURE ANALYSIS:Status: Reaffirmed January 2025 |
JEP136 | Jul 1999 |
Signature Analysis is a method to reduce the number of comprehensive physical failure analyses by the application of statistical inference techniques. The purpose of this document is to promote a common definition of Signature Analysis by inference, using the same statistical techniques, and to recognize that it is formal means of doing failure analysis.
Committee(s): JC-14.4 Free download. Registration or login required. |
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TRANSISTOR, GALLIUM ARSENIDE POWER FET, GENERIC SPECIFICATION:Status: Rescinded |
JES2 | Jul 1992 |
Establishes guideline requirements and quality assurance provisions for gallium arsenide power field-effect transistors (FETs, also know as MESFETs) designed for use in high-reliability space application such as spacecraft communications transmitters. Identifies the electrical parameters, wafer acceptance tests, screening tests, qualification tests, and lot acceptance tests pertinent to power GaAs FETs. Applicable to packaged and chip-carrier parts; portions may not be applicable to unpackaged and unmounted chips. **This document was rescinded on October 17, 2024, but is available for download for reference. purposes. Committee(s): JC-14.7 Free download. Registration or login required. |
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MOISTURE-INDUCED STRESS SENSITIVITY FOR PLASTIC SURFACE MOUNT DEVICES - SUPERSEDED BY J-STD-020A, April 1999.Status: Rescinded, May 2000 |
JESD22-A112-A | Nov 1995 |
J-STD-020 is now on revision F. Free download. Registration or login required. |
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RESISTANCE TO SOLDER SHOCK FOR THROUGH-HOLE MOUNTED DEVICESStatus: Reaffirmed February 2023 |
JESD22-B106E | Nov 2016 |
This test method is used to determine whether solid state devices can withstand the effect of the temperature shock to which they will be subjected during soldering of their leads in a solderwave process and/or solder fountain (rework/replacement) process. The heat is conducted through the leads into the device package from solder heat at the reverse side of the board. Committee(s): JC-14.1 Free download. Registration or login required. |
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A PROCEDURE FOR MEASURING N-CHANNEL MOSFET HOT-CARRIER-INDUCED DEGRADATION UNDER DC STRESS: |
JESD28-A | Dec 2001 |
This document describes an accelerated test for measuring the hot-carrier-induced degradation of a single n-channel MOSFET using dc bias. The purpose of this document is to specify a minimum set of measurements so that valid comparisons can be made between different technologies, IC processes, and process variations in a simple, consistent and controlled way. The measurements specified should be viewed as a starting point in the characterization and benchmarking of the transistor manufacturing process. Committee(s): JC-14.2 Free download. Registration or login required. |
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