Global Standards for the Microelectronics Industry
Standards & Documents Search
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Document # | Date |
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Test Method for Total Ionizing Dose (TID) from X-ray Exposure in Terrestrial Applications |
JESD22-B121 | Nov 2023 |
This test method covers X-ray imaging for terrestrial applications on packaged devices. Free download. Registration or login required. |
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TEST METHODS TO CHARACTERIZE VOIDING IN PRE-SMT BALL GRID ARRAY PACKAGES |
JESD217A.01 | Nov 2022 |
This publication provides an overview of solder void types, outlines current metrologies and test methods used for pre-SMPT solder void characterization and potential limitations, and prescribes sampling strategy for data collection, and tolerance guidelines for corrective measures. Committee(s): JC-14.1 Free download. Registration or login required. |
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Test Procedure for the Measurement of Terrestrial Cosmic Ray Induced Destructive Effects in Power Semiconductor Devices |
JEP151A | Jan 2022 |
This test method defines the requirements and procedures for terrestrial destructive* single-event effects (SEE) for example, single-event breakdown (SEB), single-event latch-up (SEL) and single-event gate rupture (SEGR) testing . It is valid when using an accelerator, generating a nucleon beam of either; 1) Mono-energetic protons or mono-energetic neutrons of at least 150 MeV energy, or 2) Neutrons from a spallation spectrum with maximum energy of at least 150 MeV. This test method does not apply to testing that uses beams with particles heavier than protons. *This test method addresses a separate risk than does JESD89 tests for non-destructive SEE due to cosmic radiation effects on terrestrial applications.
Committee(s): JC-14.1 Free download. Registration or login required. |
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THERMAL SHOCK |
JESD22-A106B.02 | Jan 2023 |
This test is conducted to determine the robustness of a device to sudden exposure to extreme changes in temperature and to the effect of alternate exposures to these extremes. Free download. Registration or login required. |
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TRANSISTOR, GALLIUM ARSENIDE POWER FET, GENERIC SPECIFICATION:Status: Rescinded |
JES2 | Jul 1992 |
Establishes guideline requirements and quality assurance provisions for gallium arsenide power field-effect transistors (FETs, also know as MESFETs) designed for use in high-reliability space application such as spacecraft communications transmitters. Identifies the electrical parameters, wafer acceptance tests, screening tests, qualification tests, and lot acceptance tests pertinent to power GaAs FETs. Applicable to packaged and chip-carrier parts; portions may not be applicable to unpackaged and unmounted chips. **This document was rescinded on October 17, 2024, but is available for download for reference. purposes. Committee(s): JC-14.7 Free download. Registration or login required. |
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UNDERSTANDING ELECTRICAL OVERSTRESS - EOSStatus: Reaffirmed May 2022 |
JEP174 | Sep 2016 |
This purpose of this white paper will be to introduce a new perspective about EOS to the electronics industry. As failures exhibiting EOS damage are commonly experienced in the industry, and these severe overstress events are a factor in the damage of many products, the intent of the white paper is to clarify what EOS really is and how it can be mitigated once it is properly comprehended. Committee(s): JC-14.3 Free download. Registration or login required. |
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USER GUIDE FOR MICROCIRCUIT FAILURE ANALYSIS:Status: RescindedNovember 2004 |
JEB16 | Jul 1970 |
This guide defines generalized procedures for the failure analysis of monolithic integrated microelectronic circuits. Although the generalized procedural steps may apply to all microelectronic circuits, additional analysis steps unique to thin/thick film hybrid devices are not covered. Committee(s): JC-14 Free download. Registration or login required. |
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VIBRATION, VARIABLE FREQUENCY |
JESD22-B103B.01 | Sep 2016 |
The Vibration, Variable Frequency Test Method is intended to determine the ability of component(s) to withstand moderate to severe vibration as a result of motion produced by transportation or filed operation of electrical equipment. This is a destructive test that is intended for component qualification. This is a minor editorial change to JESD22-B103B, June 2002 (Reaffirmed September 2010). Committee(s): JC-14.1 Free download. Registration or login required. |
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Wire Bond Pull Test Methods |
JESD22-B120.01 | Sep 2024 |
This test method provides a means for determining the strength and failure mode of a wire bonded to, and the corresponding interconnects on, a die or package bonding surface and may be performed on pre-encapsulation or post-encapsulation devices. Free download. Registration or login required. |
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WIRE BOND SHEAR TEST |
JESD22-B116B | May 2017 |
This fully revised test provides a means for determining the strength of gold and copper ball bonds to a die or package bonding surface, and may be performed on pre-encapsulation or post-encapsulation parts. Pictures have been added to enhance the fail mode diagrams. The wire bond shear test is destructive. The test method can also be used to shear aluminum and copper wedge bonds to a die or package bonding surface. It is appropriate for use in process development, process control and/or quality assurance. Free download. Registration or login required. |
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