Global Standards for the Microelectronics Industry
Standards & Documents Search
Title | Document # | Date |
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3D CHIP STACK WITH THROUGH-SILICON VIAS (TSVS): Identifying, Evaluating and Understanding Reliability Interactions |
JEP158 | Nov 2009 |
To increase device bandwidth, reduce power and shrink form factor, microelectronics manufacturers are implementing three dimensional (3D) chip stacking using through silicon vias (TSVs). Chip stacking with TSVs combines silicon and packaging technologies. As a result, these new structures have unique reliability requirements. This document is a guideline that describes how to evaluate the reliability of 3D TSV silicon assemblies. Free download. Registration or login required. |
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A Case for Lowering Component-level CDM ESD Specifications and Requirements Part II: Die-to-Die Interfaces |
JEP196 | Nov 2023 |
This white paper presents an industry-wide survey on the relevance of industry-aligned D2D CDM targets and the currently used targets for D2D interfaces. Free download. Registration or login required. |
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A PROCEDURE FOR EXECUTING SWEAT:Status: Reaffirmed October 2012, September 2018 |
JEP119A | Aug 2003 |
This document describes an algorithm for performing the Standard Wafer Level Electromigration Accelerated Test (SWEAT) method with computer controlled instrumentation. The algorithm requires a separate iterative technique (not provided) to calculate the force current for a given target time to failure. This document does not specify what test structure to use with this procedure. However, users of this algorithm report its effectiveness on both straight-lines and via-terminated test structures. Some test-structures design features are provided in JESD87 and in ASTM 1259M - 96. Committee(s): JC-14.2 Free download. Registration or login required. |
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A PROCEDURE FOR MEASURING N-CHANNEL MOSFET HOT-CARRIER-INDUCED DEGRADATION UNDER DC STRESS: |
JESD28-A | Dec 2001 |
This document describes an accelerated test for measuring the hot-carrier-induced degradation of a single n-channel MOSFET using dc bias. The purpose of this document is to specify a minimum set of measurements so that valid comparisons can be made between different technologies, IC processes, and process variations in a simple, consistent and controlled way. The measurements specified should be viewed as a starting point in the characterization and benchmarking of the transistor manufacturing process. Committee(s): JC-14.2 Free download. Registration or login required. |
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A PROCEDURE FOR MEASURING P-CHANNEL MOSFET HOT-CARRIER-INDUCED DEGRADATION AT MAXIMUM GATE CURRENT UNDER DC STRESS: |
JESD60A | Sep 2004 |
This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that accurate comparisons can be made between different technologies. The measurements specified should be viewed as a starting pint in the characterization and benchmarking of the trasistor manufacturing process. Committee(s): JC-14.2 Free download. Registration or login required. |
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A PROCEDURE FOR MEASURING P-CHANNEL MOSFET NEGATIVE BIAS TEMPERATURE INSTABILITIESStatus: Rescinded September 2021 (JC-14.2-21-183) |
JESD90 | Nov 2004 |
This document hasbeen replaced by JESD241, September 2021. |
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ACCELERATED MOISTURE RESISTANCE - UNBIASED AUTOCLAVEStatus: Reaffirmed January 2021 |
JESD22-A102E | Jul 2015 |
This test allows the user to evaluate the moisture resistance of nonhermetic packaged solid state devices. The Unbiased Autoclave Test is performed to evaluate the moisture resistance integrity of non-hermetic packaged solid state devices using moisture condensing or moisture saturated steam environments. It is a highly accelerated test that employs conditions of pressure, humidity and temperature under condensing conditions to accelerate moisture penetration through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors passing through it. This test is used to identify failure mechanisms internal to the package and is destructive. Committee(s): JC-14.1 Free download. Registration or login required. |
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ACCELERATED MOISTURE RESISTANCE - UNBIASED HAST |
JESD22-A118B.01 | May 2021 |
The Unbiased HAST is performed for the purpose of evaluating the reliability of nonhermetic packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under noncondensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. Bias is not applied in this test to ensure the failure mechanisms potentially overshadowed by bias can be uncovered (e.g., galvanic corrosion). This test is used to identify failure mechanisms internal to the package and is destructive. Committee(s): JC-14.1 Free download. Registration or login required. |
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ADAPTER TEST BOARD RELIABILITY TEST GUIDELINES |
JEP176 | Jan 2018 |
This publication describes guidelines for applying JEDEC reliability tests and recommended testing procedures to integrated circuits that require adapter test boards for electrical and Committee(s): JC-14.3 Free download. Registration or login required. |
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Addendum No. 1 to JESD28, N-CHANNEL MOSFET HOT CARRIER DATA ANALYSIS |
JESD28-1 | Sep 2001 |
This addendum provides data analysis examples useful in analyzing MOSFET n-channel hot-carrier-induced degradation data. This addendum to JESD28 (Hot carrier n-channel testing standard) suggests hot-carrier data analysis techniques. Committee(s): JC-14.2 Free download. Registration or login required. |
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ADDENDUM No. 1 to JESD35, GENERAL GUIDELINES FOR DESIGNING TEST STRUCTURES FOR THE WAFER-LEVEL TESTING OF THIN DIELECTRICSStatus: Rescinded |
JESD35-1 | Sep 1995 |
JESD35-1 was rescinded by the committee in June 2024 and has been superseded by JESD263. This addendum expands the usefulness of the Standard 35 (JESD35) by detailing the various sources of measurement error that could effect the test results obtained by the ramped tests described in JESD35. Each source of error is described and its implications on test structure design is noted. This addendum can be used as a guide when designing test structures for the qualification and characterization of thin oxide reliability, specifically, by implementing accelerated voltage or current ramp tests. Committee(s): JC-14.2 |
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ADDENDUM No. 2 to JESD35 - TEST CRITERIA FOR THE WAFER-LEVEL TESTING OF THIN DIELECTRICS:Status: Rescinded |
JESD35-2 | Feb 1996 |
JESD35-2 was rescinded by the committee in June 2024 and has been superseded by JESD263. This addendum includes test criteria to supplement JESD35. JESD35 describes procedures developed for estimating the overall integrity of thin oxides in the MOS Integrated Circuit manufacturing industry. Two test procedures are included in JESD35: a Voltage-Ramp (V-Ramp) and a Current-Ramp (J-Ramp). As JESD35 became implemented into production facilities on a variety of test structures and oxide attributes, a need arose to clarify end point determination and point out some of the obstacles that could be overcome by careful characterization of the equipment and test structures. Committee(s): JC-14.2 |
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APPLICATION SPECIFIC QUALIFICATION USING KNOWLEDGE BASED TEST METHODOLOGYStatus: Reaffirmed January 2021 |
JESD94B | Oct 2015 |
The method described in this document applies to all application specific reliability testing for solid state components with known failure mechanisms where the test duration and conditions vary based on application variables. This document does not cover reliability tests that are characterization based or essentially go / no-go type tests, for example, ESD, latch-up, or electrical over stress. Also, it does not attempt to cover every failure mechanism or test environment, but does provide a methodology that can be extended to other failure mechanisms and test environments. Committee(s): JC-14.3 Free download. Registration or login required. |
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APPLICATION THERMAL DERATING METHODOLOGIES: |
JEP149.01 | Jan 2021 |
This publication applies to the application of integrated circuits and their associated packages in end use designs. It summarizes the methodology of thermal derating and the suitability of such methodologies. Free download. Registration or login required. |
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BEADED THERMOCOUPLE TEMPERATURE MEASUREMENT OF SEMICONDUCTOR PACKAGESStatus: ReaffirmedJune 2006, September 2011, January 2015 |
JEP140 | Jun 2002 |
The beaded thermocouple temperature measurement guideline provides a procedure to accurately and consistently measure the temperature of semiconductor packages during exposure to thermal excursions. The guideline applications can include, but not limited to, temperature profile measurement in reliability test chambers and solder reflow operations that are associated with component assembly to printed wiring boards. Free download. Registration or login required. |
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BOARD LEVEL CYCLIC BEND TEST METHOD FOR INTERCONNECT RELIABILITY CHARACTERIZATION OF SMT ICs FOR HANDHELD ELECTRONIC PRODUCTS |
JESD22-B113B | Aug 2018 |
The Board Level Cyclic Bend Test Method is intended to evaluate and compare the performance of surface mount electronic components in an accelerated test environment for handheld electronic products applications. The purpose is to standardize the test methodology to provide a reproducible performance assessment of surface mounted components while duplicating the failure modes normally observed during product level test. This is not a component qualification test and is not meant to replace any product level test that may be needed to qualify a specific product and assembly. Free download. Registration or login required. |
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Board Level Drop Test Method of Components for Handheld Electronic Products |
JESD22-B111A.01 | Jun 2024 |
This Test Method standardizes the test board and test methodology to provide a reproducible assessment of the drop test performance of surface mounted components. Free download. Registration or login required. |
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CHARACTERIZATION AND MONITORING OF THERMAL STRESS TEST OVEN TEMPERATURESStatus: Reaffirmed September 2019 |
JEP153A | Mar 2014 |
This document provides an industry standard method for characterization and monitoring thermal stress test oven temperatures. The procedures described in this document should be used to insure thermal stress test conditions are being achieved and maintained during various test procedures. Free download. Registration or login required. |
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CHARACTERIZATION OF INTERFACIAL ADHESION IN SEMICONDUCTOR PACKAGES |
JEP167A | Nov 2020 |
This document identifies methods used for the characterization of die adhesion. It gives guidance which method to apply in which phase of the product or technology life cycle. Committee(s): JC-14.1 Free download. Registration or login required. |
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CHIP-PACKAGE INTERACTION UNDERSTANDING, IDENTIFICATION AND EVALUATION |
JEP156A | Mar 2018 |
This publication references a set of frequently recommended and accepted JEDEC reliability stress tests. These tests are used for qualifying new and modified technology/ process/ product families, as well as individual solid state surface-mount products. Free download. Registration or login required. |
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CLASSIFICATION OF PASSIVE AND SOLID STATE DEVICES FOR ASSEMBLY PROCESSES |
J-STD-075A | May 2018 |
This is a Joint Standard between ECIA, IPC, and JEDEC. The purpose of this specification is to establish an agreed to set of worst case solder assembly process conditions to which devices are evaluated. The generated PSL rating will convey the conditions to which a device can be safely attached to FR4 type or ceramic laminates using SMT reflow and solder wave/fountain soldering processes. It is important for device manufacturers (hereafter referred to as “suppliers”), users, and (PWB) assemblers to be highly familiar with this standard’s information and processes to insure optimal device quality and reliability. THIS DOCUMENT IS NOT AVAILABLE FOR FREE DOWNLOAD. However, this document is available to the JEDEC formulating Committee members on the JC-14 Resources tab on the Members' website. The lead organization is ECIA. Committee(s): JC-14 |
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COMPONENT PROBLEM ANALYSIS AND CORRECTIVE ACTION REQUIREMENTS - SUPERSEDED BY EIA-671, November 1996.Status: Superseded |
JESD43 | Nov 1996 |
Committee(s): JC-14.4 Free download. Registration or login required. |
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CONSTANT-TEMPERATURE AGING METHOD TO CHARACTERIZE COPPER INTERCONNECT METALLIZATIONS FOR STRESS-INDUCED VOIDING |
JESD214.01 | Aug 2017 |
This document describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method may be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time. Committee(s): JC-14.2 Free download. Registration or login required. |
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COPLANARITY TEST FOR SURFACE-MOUNT SEMICONDUCTOR DEVICESStatus: Reaffirmed February 2023 |
JESD22-B108B | Sep 2010 |
The purpose of this test is to measure the deviation of the terminals (leads or solder balls) from coplanarity at room temperature for surface-mount semiconductor devices. This test method is applicable for inspection and device characterization. If package warpage or coplanarity is to be characterized at reflow soldering temperatures, then JESD22-B112 should be used. Free download. Registration or login required. |
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COPY-EXACT PROCESS FOR MANUFACTURING |
JEP185 | Aug 2021 |
This publication defines the requirements for Copy-Exact Process (CEP) matching, real-time process control, monitoring, and ongoing assessment of the CEP. The critical element requirements for inputs, process controls, procedures, process indicators, human factors, equipment/infrastructure and matching outputs are given. Manufacturers, suppliers and their customers may use these methods to define requirements for process transfer within the constraints of their business agreements. Committee(s): JC-14.3 Free download. Registration or login required. |
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CURRENT TIN WHISKERS THEORY AND MITIGATION PRACTICES GUIDELINEStatus: Reaffirmed February 2023 |
JP002 | Mar 2006 |
This document will provide insight into the theory behind tin whisker formation as it is known today and, based on this knowledge, potential mitigation practices that may delay the onset of, or prevent tin whisker formation. The potential effectiveness of various mitigation practices will also be briefly discussed. References behind each of the theories and mitigation practices are provided. Free download. Registration or login required. |
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Customer Notification for Environmental Compliance Declaration Deviations |
JESD262 | Nov 2022 |
This standard is invoked when a supplier becomes aware that a product’s environmental compliance declaration they provided or made available to their customers had an error that might cause a customer to draw an incorrect conclusion about the compliance of the product to legal requirements. Committee(s): JC-14.4 Free download. Registration or login required. |
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CUSTOMER NOTIFICATION OF PRODUCT/PROCESS CHANGES BY SOLID-STATE SUPPLIERSStatus: SupersededBy J-STD-046, July 2016 |
JESD46D | Dec 2011 |
This standard establishes procedures to notify customers of semiconductor product and process changes. Requirements include: documentation; procedures for classification, notification and customer response; content; and records. Documentation of a suppliers change notification system should set clear and understandable expectations for both the originators of the change and their end customers. |
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CUSTOMER NOTIFICATION PROCESS FOR DISASTERS |
JESD246A | Jan 2020 |
This standard establishes the requirements for timely notification to affected customers after a disaster has occurred at a supplier’s facility that will affect the committed delivery of product. This standard puts specific emphasis on notification, timing, and notification content which includes risk exposure, impact analysis, and recovery plans. This standard is applicable to suppliers of, and affected customers for, solid-state products and the constituent components used within. Committee(s): JC-14.4 Free download. Registration or login required. |
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CUSTOMER NOTIFICATION STANDARD FOR PRODUCT/PROCESS CHANGES BY ELECTRONIC PRODUCT SUPPLIERS |
J-STD-046 | Jul 2016 |
This standard is applicable to suppliers of, and affected customers for, electronic products and their constituent components. This standard establishes the requirements for timely customer notification of changes to electronic products and associated processes. This document replaces JESD46. Committee(s): JC-14.4 Free download. Registration or login required. |
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CYCLED TEMPERATURE HUMIDITY-BIAS WITH SURFACE CONDENSATION LIFE TEST |
JESD22-A100E | Nov 2020 |
The Cycled Temperature-humidity-bias Life Test is performed for the purpose of evaluating the reliability of nonhermetic packaged solid state devices in humid environments. It employs conditions of temperature cycling, humidity, and bias that accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. The Cycled Temperature-Humidity-Bias Life Test is typically performed on cavity packages (e.g., MQUADs, lidded ceramic pin grid arrays, etc.) as an alternative to JESD22-A101 or JESD22-A110. Free download. Registration or login required. |
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Definition of “Low-Halogen” For Electronic Products |
JS709D | Jan 2024 |
This standard provides terms and definitions for “low-halogen” electronic products. Free download. Registration or login required. |
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DEVICE QUALITY PROBLEM ANALYSIS AND CORRECTIVE ACTION RESOLUTION METHODOLOGY |
JESD671D | Oct 2018 |
This standard addresses any Customer-initiated device problem analysis/corrective action request and Supplier/Authorized Distributor-identified device nonconformance to specification which may impact the Customer. This standard establishes a common set of Customer, Authorized Distributor and Supplier expectations and requirements that will help to facilitate successful problem analysis and corrective action of device problems, including administrative quality problems, which may affect the Customer. Formerly known as EIA-671 (November 1996). Became JESD671-A after revision, December 1999. Committee(s): JC-14.4 Free download. Registration or login required. |
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DISCONTINUING USE OF THE MACHINE MODEL FOR DEVICE ESD QUALIFICATIONStatus: Reaffirmed September 2020 |
JEP172A | Jul 2015 |
Over the last several decades the so called "machine model" (aka MM) and its application to the required ESD component qualification has been grossly misunderstood. The scope of this JEDEC document is to present evidence to discontinue use of this particular model stress test without incurring any reduction in the IC component's ESD reliability for manufacturing. In this regard, the document's purpose is to provide the necessary technical arguments for strongly recommending no further use of this model for IC qualification. The published document should be used as a reference to propagate this message throughout the industry. Committee(s): JC-14.3 Free download. Registration or login required. |
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DISTRIBUTOR REQUIREMENTS FOR HANDLING ELECTROSTATIC -DISCHARGE SENSITIVE (ESDS) DEVICES: SUPERSEDED BY JESD42, March 1994.Status: Superseded |
JEP108-B | Apr 1991 |
Free download. Registration or login required. |
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EARLY LIFE FAILURE RATE CALCULATION PROCEDURE FOR SEMICONDUCTOR COMPONENTS:Status: Reaffirmed January 2014, September 2019 |
JESD74A | Feb 2007 |
This standard defines methods for calculating the early life failure rate of a product, using accelerated testing, whose failure rate is constant or decreasing over time. For technologies where there is adequate field failure data, alternative methods may be used to establish the early life failure rate. The purpose of this standard is to define a procedure for performing measurement and calculation of early life failure rates. Projections can be used to compare reliability performance with objectives, provide line feedback, support service cost estimates, and set product test and screen strategies to ensure that the ELFR meets customers' requirements. Free download. Registration or login required. |
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ELECTRICAL PARAMETERS ASSESSMENTStatus: Reaffirmed May 2014, September 2020 |
JESD86A | Oct 2009 |
This standard is intended to describe various methods for obtaining electrical variate data on devices currently produced on the manufacturing and testing process to be qualified. The intent is to assess the device's capability to function within the specification parameters over time and the application environment (operating range of temperature, voltage, humidity, input/output levels, noise, power supply stability etc.). Committee(s): JC-14.3 Free download. Registration or login required. |
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ELECTRICALLY ERASABLE PROGRAMMABLE ROM (EEPROM) PROGRAM/ERASE ENDURANCE AND DATA RETENTION TEST |
JESD22-A117E | Nov 2018 |
This stress test is intended to determine the ability of an EEPROM integrated circuit or an integrated circuit with an EEPROM module (such as a microprocessor) to sustain repeated data changes without failure (program/erase endurance) and to retain data for the expected life of the EEPROM (data retention). This Standard specifies the procedural requirements for performing valid endurance and retention tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or may be developed using knowledge-based methods as in JESD94. Committee(s): JC-14.1 Free download. Registration or login required. |
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ELECTROSTATIC DISCHARGE (ESD) SENSITIVITY TESTING HUMAN BODY MODEL (HBM)Status: Supersededby ANSI/ESDA/JEDEC JS-001, April 2010. |
JESD22-A114F | Dec 2008 |
This test method establishes a standard procedure for testing and classifying microcircuits according to their susceptibility to damage or degradation by exposure to a defined electrostatic Human Body Model (HBM) discharge (ESD). The objective is to provide reliable, repeatable HBM ESD test results so that accurate classifications can be performed. Committee(s): JC-14.1 |
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ELECTROSTATIC DISCHARGE (ESD) SENSITIVITY TESTING MACHINE MODEL (MM)This document is inactive as of September 2016 |
JESD22-A115C | Nov 2010 |
JESD22-A115 is a reference document; it is not a requirement per JESD47 (Stress Test Driven Qualification of Integrated Circuits). Machine Model (MM) as described in JESD22-A115 should not be used as a requirement for integrated circuit ESD qualification. Only human-body model (HBM) and charged-device model (CDM) are the necessary ESD qualification test methods as specified in JESD47. Refer to JEP172: Discontinuing Use of the Machine Model for Device ESD Qualification for more information. Committee(s): JC-14.1 |