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This guide defines generalized procedures for the failure analysis of monolithic integrated microelectronic circuits. Although the generalized procedural steps may apply to all microelectronic circuits, additional analysis steps unique to thin/thick film hybrid devices are not covered.

Committee(s): JC-14

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This publication is intended for power GaAs FET applications requiring high reliability. An accurate measurement of thermal resistance is extremely important to provide the user with knowledge of the FETs operating temperature so that more accurate life estimates can be made. FET failure mechanisms and failure rates have, in general, an exponential dependence on temperature (which is why temperature-accelerated testing is successful). Because of the exponential relationship of failure rate with temperature, the thermal resistance should be referenced to the hottest part of the FET.

Committee(s): JC-14.7

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These guidelines apply to GaAs Monolithic Microwave Integrated Circuits (MMICs) and their individual component building blocks, such as GaAs Metal-Semiconductor Field Effect Transistors (MESFETs), Pseudomorphic High Electron Mobility Transistors (PHEMTs), Heterojunction Bipolar Transistors (HBTs), resistors, and capacitors.  While the procedure described in this document may be applied to other semiconductor technologies, especially those used in RF and microwave frequency analog applications, it is primarily intended for technologies based on GaAs and related III-V material systems (InP, AlGaAs, InGaAs, InGaP, GaN, etc). 

Committee(s): JC-14.7

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This guide has been replaced by JESD241: September 2021.

Committee(s): JC-14.2

The purpose of this Guideline is to provide a vehicle for acquiring and transmitting the necessary information in a concise, organized, and consistent format. Included in the Guideline is a sample form that facilitates transferring the maximum amount of background data to the failure analyst in a readily interpretable format. Immediate availability of this key information assists that analyst in completing a timely and accurate failure analysis.

Committee(s): JC-14.6

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Establishes guideline requirements and quality assurance provisions for gallium arsenide power field-effect transistors (FETs, also know as MESFETs) designed for use in high-reliability space application such as spacecraft communications transmitters. Identifies the electrical parameters, wafer acceptance tests, screening tests, qualification tests, and lot acceptance tests pertinent to power GaAs FETs. Applicable to packaged and chip-carrier parts; portions may not be applicable to unpackaged and unmounted chips.

**This document was rescinded on October 17, 2024, but is available for download for reference. purposes.

Committee(s): JC-14.7

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This test method is used to determine whether solid state devices can withstand the effect of the temperature shock to which they will be subjected during soldering of their leads in a solderwave process and/or solder fountain (rework/replacement) process. The heat is conducted through the leads into the device package from solder heat at the reverse side of the board.

Committee(s): JC-14.1

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This document applies to the reliability qualification of new or changed silicon devices, and their materials or manufacturing processes. Does not address qualification of product quality or functionality. Provides an alternative to traditional stress-driven qualification.

Committee(s): JC-14.2

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JESD35-1 was rescinded by the committee in June 2024 and has been superseded by JESD263.

This addendum expands the usefulness of the Standard 35 (JESD35) by detailing the various sources of measurement error that could effect the test results obtained by the ramped tests described in JESD35. Each source of error is described and its implications on test structure design is noted. This addendum can be used as a guide when designing test structures for the qualification and characterization of thin oxide reliability, specifically, by implementing accelerated voltage or current ramp tests.

Committee(s): JC-14.2

This standard is to promote unification of content and format of semiconductor device failure-analysis reports so that reports from diverse laboratories may be easily read, compared, and understood by customers. Additional objectives are to ensure that reports can be easily ready by users, satisfactorily reproduced on copying machines, adequately transmitted by telefax, and conveniently stored in standard filing cabinets.

Committee(s): JC-14.6

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Committee(s): JC-14.4

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This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that accurate comparisons can be made between different technologies. The measurements specified should be viewed as a starting pint in the characterization and benchmarking of the trasistor manufacturing process.

Committee(s): JC-14.2

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Relevant JESD62 content has been consolidated into JESD50B, published October 2008 -Special Requirments for Maverick Product Elimination-.

Committee(s): JC-14.3

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This document describes design of test structures needed to assess the reliability of aluminum-copper, refractory metal barrier interconnect systems. This includes any metal interconnect system where a refractory metal barrier or other barrier material prevents the flow of aluminum and/or copper metal ions from moving between interconnect layers. This document is not intended to show design of test structures to assess aluminum or aluminum-copper alloy systems, without barriers to Al and Cu ion movement, nor for Cu only metal systems. Some total interconnect systems might not include barrier materials on all metal layers. The structures in this standard are designed for cases where a barrier material separates two Al or Al alloy metal layers. The purpose of this document is to describe the design of test structures needed to assess electromigration (EM) and stress-induced-void (SIV) reliability of AlCu barrier metal systems.

Committee(s): JC-14.2, JC-14.21

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This Test Method standardizes the test board and test methodology to provide a reproducible assessment of the drop test performance of surface mounted components.

Committee(s): JC-14, JC-14.1

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This publication applies to the application of integrated circuits and their associated packages in end use designs. It summarizes the methodology of thermal derating and the suitability of such methodologies.

Committee(s): JC-14, JC-14.3

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This specification establishes the general requirements for hybrid microcircuits, RF/microwave hybrid microcircuits and MCMs (hereafter referred to as devices). Detailed performance requirements for a specific device are specified in the applicable device acquisition document. In the event of a conflict between this document and the device acquisition document, the device acquisition document will take precedence.

Committee(s): JC-14.3

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A complete set of test methods can be obtained from Global Engineering Documents

Committee(s): JC-14.1

This fully revised test provides a means for determining the strength of gold and copper ball bonds to a die or package bonding surface, and may be performed on pre-encapsulation or post-encapsulation parts. Pictures have been added to enhance the fail mode diagrams. The wire bond shear test is destructive. The test method can also be used to shear aluminum and copper wedge bonds to a die or package bonding surface. It is appropriate for use in process development, process control and/or quality assurance.

Committee(s): JC-14, JC-14.1

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