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This stress method is used to determine the effects of RF bias conditions and temperature on Power Amplifier Modules (PAMs) over time. These conditions are intended to simulate the devices’ operating condition in an accelerated way, and they are expected to be applied primarily for device qualification and reliability monitoring. The purpose of this test is for use to determine the effects of nominal DC and RF bias conditions and high temperature on Power Amplifier Modules (PAMs) over time. It simulates the devices’ operating condition in an accelerated way, and is primarily intended for device qualification testing and reliability monitoring which stresses all of the modules’ thermal and electrical failure mechanisms anticipated in typical use.

Committee(s): JC-14.7

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This standard applies to devices susceptible to damage by electrostatic discharge greater than 100 volts human body model (HBM) and 200 volts charged device model (CDM).

Committee(s): JC-13, JC-14.1

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This standard is intended to identify a core set of qualification tests that apply specifically for Power Amplifier Modules and their primary application in mobile devices such as cellular phones. This standard is intended to describe specific stresses and failure mechanisms that are specific to compound semiconductors and power amplifier modules. It is intended to establish more meaningful and efficient qualification testing.

Committee(s): JC-14.7

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This document was written with the intent to provide information for quality organizations in both semiconductor companies and their customers to assess and make decisions on safe ESD level requirements. It will be shown through this document why realistic modifying of the ESD target levels for component level ESD is not only essential but is also urgent. The document is organized in different sections to give as many technical details as possible to support the purpose given in the abstract. In June 2009 the formulating committee approved the addition of the ESDA logo on the covers of this document. Please see Annex C for revision history.  Reaffirmed: January 2024

Committee(s): JC-14, JC-14.3

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This standard provides a checklist that is intended as a tool to allow users to assess the level of compliance of a quality management system to the requirements ISO 9001:2008. The questions in this checklist are of a generic nature and intended to be applicable to all organizations, not just those involved in the electronics industry. It can be useful while performing self-assessments of the organization or other internal audit procedures. It is not intended for use by a contracted third party registrar during a formal audit to the requirements of ISO 9001:2008.

Committee(s): JC-14.4

JESD35A was rescinded by the committee in June 2024 and has been superseded by JESD263.

The revised JESD35 is intended for use in the MOS Integrated Circuit manufacturing industry. It describes procedures developed for estimating the overall integrity and reliability of thin gate oxides. Three basic test procedures are described, the Voltage-Ramp (V-Ramp), the Current-Ramp (J-Ramp) and the new Constant Current (Bounded J-Ramp) test. Each test is designed for simplicity, speed and ease of use. The standard has been updated to include breakdown criteria that are more robust in detecting breakdown in thinner gate oxides that may not experience hard thermal breakdown.

Committee(s): JC-14.2

This document is intended for use in the semiconductor IC manufacturing industry and provides reliability characterization techniques for low-k inter/intra level dielectrics (ILD) for the evaluation and control of ILD processes. It describes procedures developed for estimating the general integrity of back end-of-line (BEOL) ILD. Two basic test procedures are described, the Voltage-Ramp Dielectric Breakdown (VRDB) test, and the Constant Voltage Time-Dependent Dielectric Breakdown stress (CVS). Each test is designed for different reliability and process evaluation purposes. This document also describes robust techniques to detect breakdown and TDDB data analysis.

Committee(s): JC-14, JC-14.2

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JESD92 was rescinded by the committee in June 2024 and has been superseded by JESD263.

This document defines a constant voltage stress test procedure for characterizing time-dependent dielectric breakdown or 'wear-out' of thin gate dielectrics used in integrated circuit technologies. The test is designed to obtain voltage and temperature acceleration parameters required to estimate oxide life at use conditions. The test procedure includes sophisticated techniques to detect breakdown in ultra-thin films that typically exhibit large tunneling currents and soft or noisy breakdown characteristics. This document includes an annex that discusses test structure design, methods to determine the oxide electric field in ultra-thin films, statistical models, extrapolation models, and example failure-rate calculations

Committee(s): JC-14, JC-14.2

This Test Method establishes a uniform method for performing solid state device package power cycling stress test.

Committee(s): JC-14, JC-14.1

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