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This document describes a constant temperature (isothermal) aging method for testing aluminum (Al) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding. This method is valid for metallization/dielectric systems in which the dielectric is deposited onto the metallization at a temperature considerably above the intended use temperature, and above or equal to the deposition temperature of the metal. Although this is a wafer test, it is not a fast (less than 5 minutes per probe) test. It is intended to be used for lifetime prediction and failure analysis, not for production Go-NoGo lot checking.

Committee(s): JC-14.2

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This addendum provides data analysis examples useful in analyzing MOSFET n-channel hot-carrier-induced degradation data. This addendum to JESD28 (Hot carrier n-channel testing standard) suggests hot-carrier data analysis techniques.

Committee(s): JC-14.2

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Relevant JESD62 content has been consolidated into JESD50B, published October 2008 -Special Requirments for Maverick Product Elimination-.

Committee(s): JC-14.3

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At the request of IPC, J-STD-002B has been removed from the free download area. In its place, JEDEC's Test Method, JESD22-B102, Solderability, which includes lead-free, was made available until it was replaced by J-STD-002D. 

Any revision to J-STD-002 will no longer be available for free to the industry on the JEDEC website. However, the document is available to the JEDEC formulating Committee members, in the Members Area. 

If you are not a JEDEC member you may wish to try the IPC website or one of the resellers listed at: http://www.jedec.org/standards-document

Committee(s): JC-13, JC-14.1

JESD92 was rescinded by the committee in June 2024 and has been superseded by JESD263.

This document defines a constant voltage stress test procedure for characterizing time-dependent dielectric breakdown or 'wear-out' of thin gate dielectrics used in integrated circuit technologies. The test is designed to obtain voltage and temperature acceleration parameters required to estimate oxide life at use conditions. The test procedure includes sophisticated techniques to detect breakdown in ultra-thin films that typically exhibit large tunneling currents and soft or noisy breakdown characteristics. This document includes an annex that discusses test structure design, methods to determine the oxide electric field in ultra-thin films, statistical models, extrapolation models, and example failure-rate calculations

Committee(s): JC-14, JC-14.2

This newly revised test method provides a procedure for measuring the temperature coefficient of resistance, TCR(T), of thin-film metallizations used in microelectronic circuits and devices. Procedures are also provided to use the TCR(T) to determine the temperature of a metallization line under Joule-heating conditions and to determine the ambient temperature where the metallization line is used as a temperature sensor. Originally, the method was intended only for aluminum-based metallizations and for other metallizations that satisfy the linear dependence and stability stipulations of the method. The method has been revised to make it explicitly applicable to copper-based metallizations, as well, and at temperatures beyond where the resistivity of copper is no longer linearly dependent on temperature (beyond approximately 200 °C). Using the TCR(T) measured for copper in the linear-dependent region, a factor is used to correct the calculated temperature at these higher temperatures.

Committee(s): JC-14.2

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This publication specifies a common method of establishing the fracture resistance of board-level device interconnects to flexural loading during non-cyclic board assembly and test operations. Monotonic bend test qualification pass/fail requirements are typically specific to each device application and are outside the scope of this document. This version contains Addendum 1, May 2015, reposted 8/15/2016.

Committee(s): JC-14.1

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This document hasbeen replaced by JESD241, September 2021.

Committee(s): JC-14, JC-14.2

The purpose of this guide establishes the materials and substances to be disclosed by suppliers when those materials and substances are present in products and subparts that are incorporated into EEE. It benefits suppliers and their commercial customers by providing consistency and efficiency to the material declaration process. It promotes the development of consistent data exchange formats and tools that will facilitate and improve data transfer along the entire global supply chain.

Committee(s): JC-14