Global Standards for the Microelectronics Industry
Standards & Documents Search
Title | Document # | Date |
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STANDARD LOGNORMAL ANALYSIS OF UNCENSORED DATA, AND OF SINGLY RIGHT -CENSORED DATA UTILIZING THE PERSSON AND ROOTZEN METHOD: |
JESD37A | Aug 2017 |
This standard details techniques for estimating the values of a two parameter lognormal distribution from complete lifetime data (all samples in an experiment have failed) or singly right-censored lifetime data (the experiment have failed) or singly right-censored lifetime data gathered from rapid stress test; however, not all types of failure data can be analyzed with these techniques. Committee(s): JC-14.2 Free download. Registration or login required. |
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QUALITY SYSTEM ASSESSMENT - SUPERSEDED BY ANSI/EIA-670, June 1997.Status: Superseded |
JESD39-A | Jun 1997 |
Committee(s): JC-14.4 Free download. Registration or login required. |
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COMPONENT PROBLEM ANALYSIS AND CORRECTIVE ACTION REQUIREMENTS - SUPERSEDED BY EIA-671, November 1996.Status: Superseded |
JESD43 | Nov 1996 |
Committee(s): JC-14.4 Free download. Registration or login required. |
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A PROCEDURE FOR MEASURING P-CHANNEL MOSFET HOT-CARRIER-INDUCED DEGRADATION AT MAXIMUM GATE CURRENT UNDER DC STRESS: |
JESD60A | Sep 2004 |
This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that accurate comparisons can be made between different technologies. The measurements specified should be viewed as a starting pint in the characterization and benchmarking of the trasistor manufacturing process. Committee(s): JC-14.2 Free download. Registration or login required. |
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ISOTHERMAL ELECTROMIGRATION TEST PROCEDURE:Status: Reaffirmed September 2018 |
JESD61A.01 | Oct 2007 |
This standard describes an algorithm for the execution of the isothermal test, using computer-controlled instrumentation. The primary use of this test is for the monitoring of microelectronic metallization lines at wafer level (1) in process development, to evaluate process options, (2) in manufacturing, to monitor metallization reliability and (3) to monitor/evaluate process equipment. While it is developed as a fast WLR test, it can also be an effective tool for complementing the reliability data obtained through the standard package level electromigration test. Free download. Registration or login required. |
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OUTLIER IDENTIFICATION AND MANAGEMENT SYSTEM FOR ELECTRONIC COMPONENTS, RESCINDED January 2009. Replaced by JESD50.Status: RescindedJanuary 2009 |
JESD62-A | May 2002 |
Relevant JESD62 content has been consolidated into JESD50B, published October 2008 -Special Requirments for Maverick Product Elimination-. Committee(s): JC-14.3 Free download. Registration or login required. |
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STANDARD METHOD FOR CALCULATING THE ELECTROMIGRATION MODEL PARAMETERS FOR CURRENT DENSITY AND TEMPERATURE:Status: Reaffirmed 4/17/23 |
JESD63 | Apr 2023 |
This method provides procedures to calculate sample estimates and their confidence intervals for the electromigration model parameters of current density and temperature. The model parameter for current density is the exponent (n) to which the current density is raised in Black's equation. The parameter for temperature is the activation energy for the electromigration failure process. Committee(s): JC-14.2 Free download. Registration or login required. |
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STANDARD TEST STRUCTURE FOR RELIABILITY ASSESSMENT OF AlCu METALLIZATIONS WITH BARRIER MATERIALSStatus: Reaffirmed 04/17/2023 |
JESD87 | Apr 2023 |
This document describes design of test structures needed to assess the reliability of aluminum-copper, refractory metal barrier interconnect systems. This includes any metal interconnect system where a refractory metal barrier or other barrier material prevents the flow of aluminum and/or copper metal ions from moving between interconnect layers. This document is not intended to show design of test structures to assess aluminum or aluminum-copper alloy systems, without barriers to Al and Cu ion movement, nor for Cu only metal systems. Some total interconnect systems might not include barrier materials on all metal layers. The structures in this standard are designed for cases where a barrier material separates two Al or Al alloy metal layers. The purpose of this document is to describe the design of test structures needed to assess electromigration (EM) and stress-induced-void (SIV) reliability of AlCu barrier metal systems. Committee(s): JC-14.2, JC-14.21 Free download. Registration or login required. |
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Addendum No. 1 to JESD28, N-CHANNEL MOSFET HOT CARRIER DATA ANALYSIS |
JESD28-1 | Sep 2001 |
This addendum provides data analysis examples useful in analyzing MOSFET n-channel hot-carrier-induced degradation data. This addendum to JESD28 (Hot carrier n-channel testing standard) suggests hot-carrier data analysis techniques. Committee(s): JC-14.2 Free download. Registration or login required. |
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Board Level Drop Test Method of Components for Handheld Electronic Products |
JESD22-B111A.01 | Jun 2024 |
This Test Method standardizes the test board and test methodology to provide a reproducible assessment of the drop test performance of surface mounted components. Free download. Registration or login required. |
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METHOD FOR CHARACTERIZING THE ELECTROMIGRATION FAILURE TIME DISTRIBUTION OF INTERCONNECTS UNDER CONSTANT-CURRENT AND TEMPERATURE STRESSStatus: Reaffirmed September 2018 |
JESD202 | Mar 2006 |
This is an accelerated stress test method for determining sample estimates and their confidence limits of the median-time-to-failure, sigma, and early percentile of a log-Normal distribution, which are used to characterize the electromigration failure-time distribution of equivalent metal lines subjected to a constant current-density and temperature stress. Failure is defined as some pre-selected fractional increase in the resistance of the line under test. Analysis procedures are provided to analyze complete and singly, right-censored failure-time data. Sample calculations for complete and right-censored data are provided in Annex A. The analyses are not intended for the case when the failure distribution cannot be characterized by a single log-Normal distribution. Free download. Registration or login required. |
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APPLICATION THERMAL DERATING METHODOLOGIES: |
JEP149.01 | Jan 2021 |
This publication applies to the application of integrated circuits and their associated packages in end use designs. It summarizes the methodology of thermal derating and the suitability of such methodologies. Free download. Registration or login required. |
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A PROCEDURE FOR MEASURING P-CHANNEL MOSFET NEGATIVE BIAS TEMPERATURE INSTABILITIESStatus: Rescinded September 2021 (JC-14.2-21-183) |
JESD90 | Nov 2004 |
This document hasbeen replaced by JESD241, September 2021. |
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HYBRIDS/MCM |
JESD93A | May 2023 |
This specification establishes the general requirements for hybrid microcircuits, RF/microwave hybrid microcircuits and MCMs (hereafter referred to as devices). Detailed performance requirements for a specific device are specified in the applicable device acquisition document. In the event of a conflict between this document and the device acquisition document, the device acquisition document will take precedence. Committee(s): JC-14.3 Free download. Registration or login required. |
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NATIONAL ELECTRONIC PROCESS CERTIFICATION STANDARD; GOVERNMENT CONTRACTORS:Removed: August 25, 2003 |
EIA599-A | Jan 1998 |
Due to notification from the JC-14.4 subcommittee that the material contained in EIA599 has been replaced by the ISO 9000 series, the JEDEC Board of Directors, at its August 2003 meeting, approved to remove this standard from the JEDEC Free Download Area. Committee(s): JC-14.4 |
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SUPERSEDED BY THE TEST METHODS INDICATED BY 'JESD22-'Status: Superseded |
JESD22- B | Jan 2000 |
A complete set of test methods can be obtained from Global Engineering Documents Committee(s): JC-14.1 |
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PROCEDURE FOR CHARACTERIZING TIME-DEPENDENT DIELECTRIC BREAKDOWN OF ULTRA-THIN GATE DIELECTRICS:Status: Rescinded |
JESD92 | Aug 2003 |
JESD92 was rescinded by the committee in June 2024 and has been superseded by JESD263. This document defines a constant voltage stress test procedure for characterizing time-dependent dielectric breakdown or 'wear-out' of thin gate dielectrics used in integrated circuit technologies. The test is designed to obtain voltage and temperature acceleration parameters required to estimate oxide life at use conditions. The test procedure includes sophisticated techniques to detect breakdown in ultra-thin films that typically exhibit large tunneling currents and soft or noisy breakdown characteristics. This document includes an annex that discusses test structure design, methods to determine the oxide electric field in ultra-thin films, statistical models, extrapolation models, and example failure-rate calculations |
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WIRE BOND SHEAR TEST |
JESD22-B116B | May 2017 |
This fully revised test provides a means for determining the strength of gold and copper ball bonds to a die or package bonding surface, and may be performed on pre-encapsulation or post-encapsulation parts. Pictures have been added to enhance the fail mode diagrams. The wire bond shear test is destructive. The test method can also be used to shear aluminum and copper wedge bonds to a die or package bonding surface. It is appropriate for use in process development, process control and/or quality assurance. Free download. Registration or login required. |
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Package Warpage Measurement of Surface-Mount Integrated Circuits at Elevated Temperature |
JESD22-B112C | Nov 2023 |
This test method is to measure the deviation from uniform flatness of an integrated circuit package body for the range of thermal conditions experienced during the surface-mount soldering operation. Free download. Registration or login required. |
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Material Composition Declaration Guide for Electronic Products |
JIG101 | Jun 2005 |
The purpose of this guide establishes the materials and substances to be disclosed by suppliers when those materials and substances are present in products and subparts that are incorporated into EEE. It benefits suppliers and their commercial customers by providing consistency and efficiency to the material declaration process. It promotes the development of consistent data exchange formats and tools that will facilitate and improve data transfer along the entire global supply chain. Committee(s): JC-14 |