Global Standards for the Microelectronics Industry
Standards & Documents Search
| Title | Document # | Date |
|---|---|---|
STANDARD LOGNORMAL ANALYSIS OF UNCENSORED DATA, AND OF SINGLY RIGHT -CENSORED DATA UTILIZING THE PERSSON AND ROOTZEN METHOD: |
JESD37A | Aug 2017 |
This standard details techniques for estimating the values of a two parameter lognormal distribution from complete lifetime data (all samples in an experiment have failed) or singly right-censored lifetime data (the experiment have failed) or singly right-censored lifetime data gathered from rapid stress test; however, not all types of failure data can be analyzed with these techniques. Committee(s): JC-14.2 Free download. Registration or login required. |
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QUALITY SYSTEM ASSESSMENT - SUPERSEDED BY ANSI/EIA-670, June 1997.Status: Superseded |
JESD39-A | Jun 1997 |
Committee(s): JC-14.4 Free download. Registration or login required. |
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COMPONENT PROBLEM ANALYSIS AND CORRECTIVE ACTION REQUIREMENTS - SUPERSEDED BY EIA-671, November 1996.Status: Superseded |
JESD43 | Nov 1996 |
Committee(s): JC-14.4 Free download. Registration or login required. |
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A PROCEDURE FOR MEASURING P-CHANNEL MOSFET HOT-CARRIER-INDUCED DEGRADATION AT MAXIMUM GATE CURRENT UNDER DC STRESS: |
JESD60A | Sep 2004 |
This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that accurate comparisons can be made between different technologies. The measurements specified should be viewed as a starting pint in the characterization and benchmarking of the trasistor manufacturing process. Committee(s): JC-14.2 Free download. Registration or login required. |
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ISOTHERMAL ELECTROMIGRATION TEST PROCEDURE:Status: Reaffirmed September 2018 |
JESD61A.01 | Oct 2007 |
This standard describes an algorithm for the execution of the isothermal test, using computer-controlled instrumentation. The primary use of this test is for the monitoring of microelectronic metallization lines at wafer level (1) in process development, to evaluate process options, (2) in manufacturing, to monitor metallization reliability and (3) to monitor/evaluate process equipment. While it is developed as a fast WLR test, it can also be an effective tool for complementing the reliability data obtained through the standard package level electromigration test. Free download. Registration or login required. |
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OUTLIER IDENTIFICATION AND MANAGEMENT SYSTEM FOR ELECTRONIC COMPONENTS, RESCINDED January 2009. Replaced by JESD50.Status: RescindedJanuary 2009 |
JESD62-A | May 2002 |
Relevant JESD62 content has been consolidated into JESD50B, published October 2008 -Special Requirments for Maverick Product Elimination-. Committee(s): JC-14.3 Free download. Registration or login required. |
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STANDARD METHOD FOR CALCULATING THE ELECTROMIGRATION MODEL PARAMETERS FOR CURRENT DENSITY AND TEMPERATURE:Status: Reaffirmed 4/17/23 |
JESD63 | Apr 2023 |
This method provides procedures to calculate sample estimates and their confidence intervals for the electromigration model parameters of current density and temperature. The model parameter for current density is the exponent (n) to which the current density is raised in Black's equation. The parameter for temperature is the activation energy for the electromigration failure process. Committee(s): JC-14.2 Free download. Registration or login required. |
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STANDARD TEST STRUCTURE FOR RELIABILITY ASSESSMENT OF AlCu METALLIZATIONS WITH BARRIER MATERIALSStatus: Reaffirmed 04/17/2023 |
JESD87 | Apr 2023 |
This document describes design of test structures needed to assess the reliability of aluminum-copper, refractory metal barrier interconnect systems. This includes any metal interconnect system where a refractory metal barrier or other barrier material prevents the flow of aluminum and/or copper metal ions from moving between interconnect layers. This document is not intended to show design of test structures to assess aluminum or aluminum-copper alloy systems, without barriers to Al and Cu ion movement, nor for Cu only metal systems. Some total interconnect systems might not include barrier materials on all metal layers. The structures in this standard are designed for cases where a barrier material separates two Al or Al alloy metal layers. The purpose of this document is to describe the design of test structures needed to assess electromigration (EM) and stress-induced-void (SIV) reliability of AlCu barrier metal systems. Committee(s): JC-14.2, JC-14.21 Free download. Registration or login required. |
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Addendum No. 1 to JESD28, N-CHANNEL MOSFET HOT CARRIER DATA ANALYSIS |
JESD28-1 | Sep 2001 |
This addendum provides data analysis examples useful in analyzing MOSFET n-channel hot-carrier-induced degradation data. This addendum to JESD28 (Hot carrier n-channel testing standard) suggests hot-carrier data analysis techniques. Committee(s): JC-14.2 Free download. Registration or login required. |
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Board Level Drop Test Method of Components for Handheld Electronic Products |
JESD22-B111A.01 | Jun 2024 |
This Test Method standardizes the test board and test methodology to provide a reproducible assessment of the drop test performance of surface mounted components. Free download. Registration or login required. |
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