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This standard is intended to identify a core set of qualification tests that apply specifically for Power Amplifier Modules and their primary application in mobile devices such as cellular phones. This standard is intended to describe specific stresses and failure mechanisms that are specific to compound semiconductors and power amplifier modules. It is intended to establish more meaningful and efficient qualification testing.

Committee(s): JC-14.7

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This standard specifies the general requirements of a statistical process control (SPC) system. Continuous quality improvement and the achievement of operational and manufacturing excellence are the essence of the total quality philosophy. One of the major vehicles used for achieving the excellence objective is the application of Statistical Process Control (SPC) techniques. This document replaces EIA-557B.

Committee(s): JC-14

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The method described in this document applies to all application specific reliability testing for solid state components with known failure mechanisms where the test duration and conditions vary based on application variables. This document does not cover reliability tests that are characterization based or essentially go / no-go type tests, for example, ESD, latch-up, or electrical over stress. Also, it does not attempt to cover every failure mechanism or test environment, but does provide a methodology that can be extended to other failure mechanisms and test environments.

Committee(s): JC-14.3

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This Bias Temperature Instability (BTI) stress/test procedure is proposed to provide a minimum recommendation for a simple and consistent comparison of the mean threshold voltage (Vth) BTI induced shift. The procedure enables comparison of stable and manufacturable CMOS processes and technologies in which the process variation is low and the yield is mature. Qualification and accept-reject criteria are not given in this document.

Committee(s): JC-14.2

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This document describes a test method only; acceptance criteria and qualification requirements are not defined. This test method applies to solder ball pull force/energy testing prior to end-use attachment. Solder balls are pulled individually using mechanical jaws; force, fracture energy and failure mode data are collected and analyzed. Other specialized solder ball pull methods using a heated thermode, gang pulling of multiple solder joints, etc., are outside the scope of this document. Both low and high speed testing are covered by this document. This is a minor editorial revision to JESD22-A115A.

Committee(s): JC-14, JC-14.1

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This test method is used to determine whether solid state devices can withstand the effect of the temperature shock to which they will be subjected during soldering of their leads in a solderwave process and/or solder fountain (rework/replacement) process. The heat is conducted through the leads into the device package from solder heat at the reverse side of the board.

Committee(s): JC-14.1

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This test method provides various tests for determining the integrity lead/package interface and the lead itself when the lead(s) are bent due to faulty board assembly followed by rework of the part for reassembly. For hermetic packages it is recommend that this test be followed by hermeticity tests in accordance with Test Method A109 to determine if there are any adverse effects from the stresses applied to the seals as well as to the leads. These tests, including each of its test conditions, is considered destructive and is only recommended for qualification testing. This test is applicable to all through-hole devices and surface-mount devices requiring lead forming by the user.

Committee(s): JC-14, JC-14.1

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This fully revised test provides a means for determining the strength of gold and copper ball bonds to a die or package bonding surface, and may be performed on pre-encapsulation or post-encapsulation parts. Pictures have been added to enhance the fail mode diagrams. The wire bond shear test is destructive. The test method can also be used to shear aluminum and copper wedge bonds to a die or package bonding surface. It is appropriate for use in process development, process control and/or quality assurance.

Committee(s): JC-14, JC-14.1

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This document describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method may be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.

Committee(s): JC-14.2

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