Global Standards for the Microelectronics Industry
Standards & Documents Search
| Title | Document # |
Date |
|---|---|---|
PROCUREMENT QUALITY OF SOLID STATE COMPONENTS BY GOVERNMENT CONTRACTORSStatus: Rescinded May 2006 |
EIA623 | Jul 1994 |
Committee(s): JC-13 Free download. Registration or login required. |
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PROCUREMENT QUALITY OF SOLID STATE COMPONENTS BY GOVERNMENT CONTRACTORS - SUPERSEDED BY EIA-623, July 1994Status: Superseded |
JESD40 | Jul 1994 |
Committee(s): JC-13 Free download. Registration or login required. |
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GENERAL REQUIREMENTS FOR DISTRIBUTORS OF MILITARY SEMICONDUCTOR DEVICES:Status: Rescinded |
JEP109-C | Mar 1995 |
Superseded by JESD31-A, June 2001. Committee(s): JC-13 Free download. Registration or login required. |
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JEDEC REQUIREMENTS FOR CLASS B MICROCIRCUITSStatus: Rescinded, May 2006 |
JEP101-C | Nov 1995 |
Committee(s): JC-13.2 Free download. Registration or login required. |
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MANAGEMENT OF COMPONENT OBSOLESCENCE BY GOVERNMENT CONTRACTORS: RESCINDED, October 2002Status: RescindedOctober 2002 |
JESD53 | Jan 1996 |
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Free download. Registration or login required. |
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SOLDERABILITY TESTS FOR COMPONENT LEADS, TERMINATIONS, LUGS, TERMINALS AND WIRES:Removed 01/21/04 Release Number: B |
J-STD-002 | Feb 2003 |
At the request of IPC, J-STD-002B has been removed from the free download area. In its place, JEDEC's Test Method, JESD22-B102, Solderability, which includes lead-free, was made available until it was replaced by J-STD-002D.
Any revision to J-STD-002 will no longer be available for free to the industry on the JEDEC website. However, the document is available to the JEDEC formulating Committee members, in the Members Area.
If you are not a JEDEC member you may wish to try the IPC website or one of the resellers listed at: http://www.jedec.org/standards-document |
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GUIDE FOR THE PRODUCTION AND ACQUISITION OF RADIATION-HARDNESS ASSURED MULTICHIP MODULES AND HYBRID MICROCIRCUITS: |
JEP133C | Jan 2010 |
A revised and expanded publication for suppliers and users of radiation hardness assured (RHA) multichip modules (MCMs) and hybrid microcircuits, is now available. The document provides guidance as to how to achieve, maintain and ensure required levels of radiation-hardness given the fact that the constituent dice can have different levels of hardness assurance. It also describes how to deal with the various radiation hardness situations that an MCM/Hybrid developer, procuring activity or user will encounter. The guide is intended to supplement three relevant performance specifications: MIL-PRF-38534, MIL-PRF-38535 and MIL-PRF-19500. Committee(s): JC-13.5, JC-13.4 Free download. Registration or login required. |
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ALPHA RADIATION MEASUREMENT IN ELECTRONIC MATERIALS |
JESD221 | May 2011 |
This standard applies generally to gas proportional instruments and the use thereof in measuring materials with an alpha emissivity of less than 10 a·khr-1·cm-2. The primary focus will be on materials used in semiconductor fabrication. The purpose of this document is to specify the recommended method for measuring alpha emissivity in materials utilized in the manufacturing of semiconductors. The method specifically applies to gas proportional instruments and designates recommended instrument settings. In addition, the method discusses operation of ionization counters. The document also recommends methods for determining sample size and for evaluating instrument background accurately. Free download. Registration or login required. |
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GUIDELINE FOR INTERNAL GAS ANALYSIS FOR MICROELECTRONIC PACKAGESStatus: Reaffirmed November 2020 |
JEP144A | Nov 2011 |
This guideline is applicable to hermetically sealed microelectronic components (including discrete semiconductors, monolithic and hybrid microcircuits). Specific cases with unique packaging, materials, or environmental constraints may not find all of the following information and procedures applicable. Committee(s): JC-13 Free download. Registration or login required. |
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TEST STANDARD FOR THE MEASUREMENT OF PROTON RADIATION SINGLE EVENT EFFECTS IN ELECTRONIC DEVICES |
JESD234 | Oct 2013 |
This test standard defines the requirements and procedures for 40 to 500 MeV proton irradiation of electronic devices for Single Event Effects (SEE), and reporting the results. Protons are capable of causing SEE by both direct and indirect ionization, however, in this energy range, indirect ionization will be the dominant cause of SEE [1-3]. Indirect ionization is produced from secondary particles of proton/material nuclear reactions, where the material is Si or any other element present in the semiconductor. Direct proton ionization is thought to be a minor source of SEE, at these energies. This energy range is also selected to coincide with the commonly used proton facilities, and result in the fewest energy dependent issues during test. Free download. Registration or login required. |
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