Standards & Documents Search: JC-25: Transistors

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Title	Document #	Date
TEST METHODS FOR THE COLLECTOR-BASE TIME CONSTANT AND FOR THE RESISTIVE PART OF THE COMMON-EMITTER INPUT IMPEDANCE:Status: Reaffirmed November 1963, June 1972, April 1981, April 1999, October 2002	JESD284-A	Nov 1963
The test methods described in this Standard are generally applicable to alloy-like devices for which the usual simplified equivalent circuits can be employed. Formerly known as EIA-284-A (November 1963). Became JESD284-A when reaffirmed in October 2002. Committee(s): JC-25 Download JESD284-A Free download. Registration or login required.
RANGES AND CONDITIONS FOR SPECIFYING BETA FOR LOW POWER, AUDIO FREQUENCY TRANSISTORS FOR ENTERTAINMENT SERVICE:Status: Reaffirmed April 1981, April 1999, March 2009	JESD302	Jan 1965
This standard establishes the preferred rating ranges and conditions for specifying beta for low power, audio frequency transistors intended for entertainment service. Formerly known as RS-302 and EIA-302. Committee(s): JC-25 Download JESD302 Free download. Registration or login required.
MEASUREMENT OF SMALL SIGNAL HF, VHF, AND UHF POWER GAIN OF TRANSISTORS:Status: Reaffirmed April 1981, April 1999, March 2009	JESD306	May 1965
This standard provides a method of measurement for small-signal HF, VHF, and UHF power gain of low power transistors. Formerly known as RS-306 and/or EIA-306. Committee(s): JC-25 Download JESD306 Free download. Registration or login required.
MEASUREMENT OF TRANSISTOR NOISE FIGURE AT MF, HF, AND VHFStatus: Reaffirmed April 1999, March 2009	JESD311A	Nov 1981
This standard describes a test method for measurement of transistor noise figure and effective input noise temperature at MF, HF, and VHF. This standard also adds the necessary information to make 'effective input noise temperature measurements'. This method is a revision of EIA-311 and incorporates material previously found in EIA-283, Test Method for Transistor Noise Figure Measurements at Medium Frequencies, Rescinded November 1981. Formerly known as RS-311 and/or EIA-311-A. Committee(s): JC-25 Download JESD311A Free download. Registration or login required.
THERMAL RESISTANCE MEASUREMENTS OF CONDUCTION COOLED POWER TRANSISTORS:Status: Reaffirmed April 1981, April 2001	JESD313-B	Oct 1975
This standard provides a test method for measuring thermal resistance for conduction cooled power transistors. Committee(s): JC-25 Download JESD313-B Free download. Registration or login required.
STANDARD FOR THE MEASUREMENT OF CRE:Status: Reaffirmed April 1981, April 1999, March 2009	JESD340	Nov 1967
This standard offers an easily measured parameter which is one of the significant characteristics in determining the stability of a transistor intended for small-signal operation. The measurement technique allows rapid testing. Its correlation to AC stability will help to establish the interchangeability of a device. Formerly known as RS-340 and/or EIA-340. Committee(s): JC-25 Download JESD340 Free download. Registration or login required.
THE MEASUREMENT OF TRANSISTOR NOISE FIGURE AT FREQUENCIES UP TO 20 kHz BY SINUSOIDAL SIGNAL-GENERATOR METHOD:Status: Reaffirmed April 1981, April 1999, March 2009	JESD353	Apr 1968
This noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution. Formerly known as RS-353 and/or EIA-353 Committee(s): JC-25 Download JESD353 Free download. Registration or login required.
THE MEASUREMENT OF TRANSISTOR EQUIVALENT NOISE VOLTAGE AND EQUIVALENT NOISE CURRENT AT FREQUENCIES OF UP TO 20 kHz:Status: Reaffirmed April 1981, April 1999, March 2009	JESD354	Apr 1968
This standard provides a method for determining values, for device registration purposes, for transistor equivalent noise voltage and equivalent noise current at frequencies up to 20 kHz. This method is applicable to transistors whose noise has a Gaussian, flat (white) or I/f power distribution. Formerly known as RS-354 and/or EIA-354 Committee(s): JC-25 Download JESD354 Free download. Registration or login required.
THE MEASUREMENT OF SMALL-SIGNAL VHF-UHF TRANSISTOR SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO:Status: Reaffirmed April 1981, April 1999, March 2009	JESD371	Feb 1970
This standard describes the method to be used for the measurement of small-signal VHF-UHF transistor short-circuit forward current transfer ratio, in preparing data sheets for JEDEC registration of low power transistors. Formerly known as RS-371 and/or EIA-371. Committee(s): JC-25 Download JESD371 Free download. Registration or login required.
THE MEASUREMENT OF SMALL-SIGNAL VHF-UHF TRANSISTOR ADMITTANCE PARAMETERS:Status: Reaffirmed April 1981, April 1999, March 2009	JESD372	May 1970
This standard describes the method to be used for the measurement of small-signal VHF-UHF transistor admittance parameters, in preparing data sheets for JEDEC registration of low power transistors. Formerly known as RS-372 and/or EIA-372 Committee(s): JC-25 Download JESD372 Free download. Registration or login required.
MEASUREMENT OF SMALL VALUES OF TRANSISTOR CAPACITANCE:Status: Reaffirmed April 1981, April 1999, March 2009	JESD398	Jul 1972
This standard contains a three-terminal procedure for capacitance measurement with due precautions for shielding of extraneous effects due to terminal leads and metal enclosures. Formerly known as RS-398 and/or EIA-398 Committee(s): JC-25 Download JESD398 Free download. Registration or login required.
STANDARD LIST OF VALUES TO BE USED IN SEMICONDUCTOR DEVICE SPECIFICATIONS AND REGISTRATION FORMAT:Status: Reaffirmed March 2001	JESD419-A	Oct 1980
This document contains standard lists of values which are recommended for use in semiconductor device specification and JEDEC Registration Formats. Good reasons should exist in those cases where values are used that are not included in these lists. Formerly known as EIA-419-A, that superseded JEP74 (February 1996). Committee(s): JC-25 Download JESD419-A Free download. Registration or login required.
STANDARD FOR THE MEASUREMENT OF SMALL-SIGNAL TRANSISTOR SCATTERING PARAMETERS:Status: Reaffirmed April 1999, March 2009	JESD435	Apr 1976
This standard specifies the standard for the measurement of small-signal transistor scattering parameters. Formerly known as RS-435 and/or EIA-435 Committee(s): JC-25 Download JESD435 Free download. Registration or login required.
POWER MOSFET ELECTRICAL DOSE RATE TEST METHOD:Status: Reaffirmed April 1999	JEP115	Aug 1989
The purpose of this Test Method is to establish electrical criteria for comparing and specifying power MOSFET performance under high dose rate radiation. Committee(s): JC-25 Download JEP115 Free download. Registration or login required.
USER GUIDELINES FOR IR THERMAL IMAGING DETERMINATION OF DIE TEMPERATURE:	JEP138	Sep 1999
The purpose of these user guidelines is to provide background and an example for the use of an infrared (IR) microscope to determine die temperature of electronic devices for calculations such as thermal resistance. Committee(s): JC-25 Download JEP138 Free download. Registration or login required.
TEST PROCEDURES FOR VERIFICATION OF MAXIMUM RATINGS OF POWER TRANSISTORS:Status: Reaffirmed September 1981, April 1999	JEP65	Dec 1967
This publication describes tests which are intended to represent the verification of maximum ratings for data sheets; they are not tests for performance or quality level. This material is to be used in conjunction with formats developed for device registration and defining data. Committee(s): JC-25 Download JEP65 Free download. Registration or login required.
PREFERRED LEAD CONFIGURATION FOR FIELD-EFFECT TRANSISTORS:Status: Reaffirmed September 1981, April 1999	JEP69-B	Nov 1973
This publication indicates preferred pinouts for FETs in various package designs. Committee(s): JC-25 Download JEP69-B Free download. Registration or login required.
RECOMMENDED PRACTICE FOR MEASUREMENT OF TRANSISTOR LEAD TEMPERATURE:	JEP84A	Jun 2004
This publication covers recommended methods for measurement of transistor lead temperatures under various load conditions. The techniques described are sufficiently accurate for most applications. Committee(s): JC-25 Download JEP84A Free download. Registration or login required.
POWER MOSFETS:	JESD24	Jul 1985
This standard contains a listing of terms and definitions and letter symbols; a description of established procedures that are followed in the assignment of semiconductor-industry-type designations to power transistors; electrical verification test; thermal characteristics; and a user's guide. Committee(s): JC-25 Download JESD24 Free download. Registration or login required.
ADDENDUM No. 1 to JESD24 - METHOD FOR MEASUREMENT OF POWER DEVICE TURN-OFF SWITCHING LOSS:Status: Reaffirmed April 1999, October 2002	JESD24- 1	Oct 1989
Describes the method of a typical oscilloscope waveform and the basic test circuit employed in the measurement of turn off loss for bipolar, IGBT and MOSFET power semiconductors. This method can be used as a standard for evaluating power semiconductor turn-off switching loss capability and defines standard terminology that should be referenced within the electronic industry. Committee(s): JC-25 Download JESD24- 1 Free download. Registration or login required.

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