|STANDARD TEST STRUCTURE FOR RELIABILITY ASSESSMENT OF AlCu METALLIZATIONS WITH BARRIER MATERIALS||JESD87||Jul 2001|
This document describes design of test structures needed to assess the reliability of aluminum-copper, refractory metal barrier interconnect systems. This includes any metal interconnect system where a refractory metal barrier or other barrier material prevents the flow of aluminum and/or copper metal ions from moving between interconnect layers. This document is not intended to show design of test structures to assess aluminum or aluminum-copper alloy systems, without barriers to Al and Cu ion movement, nor for Cu only metal systems. Some total interconnect systems might not include barrier materials on all metal layers. The structures in this standard are designed for cases where a barrier material separates two Al or Al alloy metal layers. The purpose of this document is to describe the design of test structures needed to assess electromigration (EM) and stress-induced-void (SIV) reliability of AlCu barrier metal systems.
|GUIDELINE FOR CHARACTERIZING SOLDER BUMP ELECTROMIGRATION UNDER CONSTANT CURRENT AND TEMPERATURE STRESS||JEP154||Jan 2008|
This document describes a method to test the electromigration (EM) susceptibility of solder bumps, including other types of bumps, such as solder capped copper pillars, used in flip-chip packages. The method is valid for Sn/Pb eutectic, high Pb, and Pb-free solder bumps. The document discusses the advantages and concerns associated with EM testing, as well as options for data analysis.
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