|ADDENDUM No. 3 to JESD24 - THERMAL IMPEDANCE MEASUREMENTS FOR VERTICAL POWER MOSFETS (DELTA SOURCE-DRAIN VOLTAGE METHOD):Status: Reaffirmed||JESD24- 3||Nov 1990|
The purpose of this test method is to measure the thermal impedance of the MOSFET under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity if the forward voltage drop of the source-drain is used as the junction temperature indicator. This method is particularly suitable to enhancement mode, power MOSFETs having relatively long thermal response times. This test method may be used to measure the thermal response of junction to a heating pulse, to ensure proper die mountdown to its case, or the dc thermal resistance, by the proper choice of the pulse duration and magnitude if the heating pulse.
|COUNTERFEIT ELECTRONIC PARTS: NON-PROLIFERATION FOR MANUFACTURERS This standard identifies the best commercial practices for mitigating and/or avoiding counterfeit products by all manufacturers of electronic parts including, but not limited to original component manufacturers (OCMs), authorized aftermarket manufacturers, and other companies that manufacture electronic parts under their own logo, name, or trademark. The types of product this standard applies to is limited to monolithic microcircuits, hybrid microcircuits and discrete semiconductor products.||JESD243||Mar 2016|